{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":3,"startPagecode":1},"records":[{"abstractinfo":"系统地研究了磁控溅射制备的Sm22Co78/Fe65Co35/Sm22Co78三层膜系统中,当软磁相的体积分数一定时,矫顽力和剩磁比随FeCo软磁层厚度(d)的变化.所有样品的磁滞回线均为单一硬磁相特征:说明FeCo软磁层与SmCo硬磁层之间的交换相互作用,使两相很好地复合在一起.当软磁相的体积分数为15%、20%、30%的情况下,矫顽力随d的变化都出现峰值;而剩磁比则单调增加.当体积分数为50%时,矫顽力随d的增加没有峰值,但剩磁比还是单调增加.随着软磁体积分数的增加,矫顽力峰值及峰值位置都是单调减少.\n","authors":[{"authorName":"刘湘华","id":"0a943c63-0e69-41fc-affc-bcbf00e603a1","originalAuthorName":"刘湘华"},{"authorName":"严格","id":"2395a6b1-c436-4d54-b257-b7b095cb3691","originalAuthorName":"严格"},{"authorName":"崔利亚","id":"9b9a1908-93b9-4b16-b33d-2e35e54f6f6e","originalAuthorName":"崔利亚"},{"authorName":"周少雄","id":"5bc329f9-fa77-4a8d-b072-b4c4ff2342b8","originalAuthorName":"周少雄"},{"authorName":"王崇愚","id":"b3429323-0678-4a25-96e1-31e714554d01","originalAuthorName":"王崇愚"},{"authorName":"<span style=\"color:red\">郑</span><span style=\"color:red\">鹉</span>","id":"4312e5d1-8676-4359-8c90-d5ce2aef9f71","originalAuthorName":"郑鹉"},{"authorName":"王艾玲","id":"66ef0419-40a8-4d6f-bd3f-d65f1d64ee64","originalAuthorName":"王艾玲"},{"authorName":"陈金昌","id":"59460eb2-ae40-4a85-a6c5-3ebb065f4c30","originalAuthorName":"陈金昌"}],"doi":"","fpage":"267","id":"c6da80d6-862f-497c-b01c-242b44225933","issue":"3","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"9672677f-b56b-4dd1-9794-41adaaff3a59","keyword":"Sm22Co78/Fe65Co35/Sm22Co78三层膜","originalKeyword":"Sm22Co78/Fe65Co35/Sm22Co78三层膜"},{"id":"55f9071d-1a43-4ebb-9349-6fe84eef52f9","keyword":"矫顽力","originalKeyword":"矫顽力"},{"id":"781e40d9-af47-43da-843e-d0a3289014d2","keyword":"剩磁比","originalKeyword":"剩磁比"},{"id":"b81549e5-697c-4a23-9c75-802575474ae0","keyword":"剩磁增强","originalKeyword":"剩磁增强"}],"language":"zh","publisherId":"gncl200203014","title":"SmCo/FeCo/SmCo三层膜中的剩磁增强效应","volume":"33","year":"2002"},{"abstractinfo":"用磁控溅射方法制备NiFeSiMnMo/Cu/NiFeSiMnMo多层膜;理论研究了多层膜巨磁阻抗效应与磁导率的关系;实验研究了NiFeSiMnMo/Cu/NiFeSiMnMo多层膜结构的磁导率和巨磁阻抗比.在驱动频率3MHz下△μ′/μ′(%)出现800%的最大值,巨磁阻抗比出现14.4%的最大值.","authors":[{"authorName":"孙智勇","id":"58ec2f64-f539-4f3e-a93b-46afa59efc9e","originalAuthorName":"孙智勇"},{"authorName":"赵志明","id":"266a5f83-3513-4ab0-969c-6d34103ece4b","originalAuthorName":"赵志明"},{"authorName":"董刚","id":"5428ca7f-652e-406e-b5e2-716ac1e40bcb","originalAuthorName":"董刚"},{"authorName":"季勇","id":"d9545d90-bbee-4459-8e4c-27ed47a2878e","originalAuthorName":"季勇"},{"authorName":"<span style=\"color:red\">郑</span><span style=\"color:red\">鹉</span>","id":"84325c8f-278c-449c-8fc4-a07ea669ad63","originalAuthorName":"郑鹉"},{"authorName":"王艾玲","id":"a1f9f6fb-23aa-46b5-94a2-dbe4e4ad27f9","originalAuthorName":"王艾玲"},{"authorName":"姜宏伟","id":"382845fc-490c-4ae9-8159-b11d0cd5fbde","originalAuthorName":"姜宏伟"}],"doi":"","fpage":"10","id":"c2712a14-88c9-413b-9d6e-3e23cb8d1939","issue":"6","journal":{"abbrevTitle":"JSGNCL","coverImgSrc":"journal/img/cover/JSGNCL.jpg","id":"46","issnPpub":"1005-8192","publisherId":"JSGNCL","title":"金属功能材料"},"keywords":[{"id":"f8a45270-f33e-46ba-b4a4-21470f433584","keyword":"巨磁阻抗","originalKeyword":"巨磁阻抗"},{"id":"ac7d5c95-c628-4a8b-985d-21cc55b4e8bd","keyword":"磁导率","originalKeyword":"磁导率"},{"id":"3dfcbdf4-f85b-4945-879d-4525644115bb","keyword":"多层膜","originalKeyword":"多层膜"}],"language":"zh","publisherId":"jsgncl200806004","title":"NiFeSiMnMo/Cu/NiFeSiMnMo多层膜的磁导率和巨磁阻抗比的研究","volume":"15","year":"2008"},{"abstractinfo":"用磁控溅射方法制备了以Ta和非磁性(Ni0.81Fe0.19)66Cr34为缓冲层的Ni74Co26薄膜,研究了它们的各向异性磁电阻效应.结果表明:用厚度为4.5nm的非磁性(Ni0.81Fe0.19)66Cr34做缓冲层的Ni74Co26薄膜,其各向异性磁电阻(AMR)值比用10nm的Ta做缓冲层的同样厚度的Ni74Co26薄膜的AMR有较大的提高.比如,当Ni74Co26薄膜的厚度为12.5nm时,AMR值能提高43%.X射线衍射(XRD)研究表明:缓冲层(Ni0.81Fe0.19)66Cr34与磁性层Ni74Co26有非常接近的晶格常数,因此产生了较大的AMR值.","authors":[{"authorName":"周丽萍","id":"278db2ff-a904-4e9e-8c41-cdab51a508ba","originalAuthorName":"周丽萍"},{"authorName":"季勇","id":"e4717992-2ef5-4720-9a8f-59faeb8b6866","originalAuthorName":"季勇"},{"authorName":"季红","id":"316db82b-1126-4f1e-ab4a-f8a5a17fee8d","originalAuthorName":"季红"},{"authorName":"王艾玲","id":"e7a6db11-f201-42b5-b68c-7839c5c92d99","originalAuthorName":"王艾玲"},{"authorName":"<span style=\"color:red\">郑</span><span style=\"color:red\">鹉</span>","id":"c5a6da36-356e-45f7-bd50-c1e2d89399c4","originalAuthorName":"郑鹉"},{"authorName":"姜宏伟","id":"ae640d49-dd9d-48a3-8a68-ec0bbcfb4b87","originalAuthorName":"姜宏伟"}],"doi":"","fpage":"820","id":"00a2523a-55e8-43b6-89cb-793ed6a13ded","issue":"z1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"43467604-0313-4e0b-8c00-2c92b92dba3c","keyword":"缓冲层","originalKeyword":"缓冲层"},{"id":"07ee9e3e-75af-43af-bae7-e9f8016def9f","keyword":"NiCo薄膜","originalKeyword":"NiCo薄膜"},{"id":"68504a7a-e1b9-4526-a6a2-c187cd92bebb","keyword":"各向异性磁电阻","originalKeyword":"各向异性磁电阻"}],"language":"zh","publisherId":"gncl2004z1231","title":"(Ni0.81Fe0.19)66Cr34缓冲层对Ni74Co26薄膜各向异性磁电阻的影响","volume":"35","year":"2004"},{"abstractinfo":"制备了以Ta和非磁性NiFeCr作为缓冲层和保护层的NiFe/PtMn双层膜,研究了它们的结构和物性,结果表明:用NiFeCr做缓冲层和保护层的NiFe/PtMn双层膜,其交换偏置场比以Ta为缓冲层和保护层的NiFe/PtMn的交换偏置场有了10%的提高;退火处理以后,以NiFeCr为缓冲层和保护层的样品的磁性层NiFe的磁矩降低要小于以Ta为缓冲层和保护层的样品的磁性层NiFe的磁矩降低.同时,XRD测量计算发现,以NiFeCr为缓冲层生长的NiFe/PtMn样品比Ta为缓冲层生长的NiFe/PtMn样品具有更好的织构,更大的平均晶粒尺寸,因而具有更好的热稳定性.NiFeCr比Ta更适合做基于Mn合金为反铁磁层的缓冲层和保护层.","authors":[{"authorName":"陈庆永","id":"88b3f9a4-47fd-4807-98bd-c909c13b4aa5","originalAuthorName":"陈庆永"},{"authorName":"邵明辉","id":"7c0c2f65-24bd-4ab5-a679-95fe3bb66152","originalAuthorName":"邵明辉"},{"authorName":"姜宏伟","id":"c7a35d0f-6a0b-4f71-8f33-5fd1a9231598","originalAuthorName":"姜宏伟"},{"authorName":"<span style=\"color:red\">郑</span><span style=\"color:red\">鹉</span>","id":"969f1371-3efb-4d67-8b8d-e249178e4e9e","originalAuthorName":"郑鹉"},{"authorName":"王艾玲","id":"c1eeb28c-05b5-4402-8669-70d183395b00","originalAuthorName":"王艾玲"}],"doi":"10.3969/j.issn.1007-4252.2006.04.014","fpage":"317","id":"330ed3c1-0aa0-4a94-be1c-e0a1be218230","issue":"4","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"8749c565-2a2a-4a1c-81aa-39ed99aabe7a","keyword":"巨磁电阻","originalKeyword":"巨磁电阻"},{"id":"1f128f0f-4ebe-4ce8-a4fb-20582acfedf6","keyword":"交换偏置","originalKeyword":"交换偏置"},{"id":"a49b84b7-3967-4d1a-8a9b-b1390ef63d62","keyword":"热稳定性","originalKeyword":"热稳定性"}],"language":"zh","publisherId":"gnclyqjxb200604014","title":"不同缓冲层和保护层对NiFe/PtMn双层膜磁性的影响","volume":"12","year":"2006"},{"abstractinfo":"用磁控溅射法制备了以NiFeCr和Ta分别为缓冲层的两种NiCo薄膜样品,在200、300、400℃温度下对两种样品退火.结果表明,不同的退火温度导致样品AMR值不同,在退火200℃时样品AMR值最大,超过200℃退火磁电阻急剧下降.XRD和摇摆曲线的结果都表明,退火后晶粒的平均晶粒尺寸都会长大,晶内缺陷减少.振动样品磁强计(VSM)测量的结果显示,退火后样品的磁矩有所减小,矫顽力增大,表明缓冲层与NiCo磁薄膜之间有扩散现象.","authors":[{"authorName":"季红","id":"414cdaad-5c67-4abd-812a-52236ca0d50a","originalAuthorName":"季红"},{"authorName":"季勇","id":"70b56c4e-9c3b-4471-ae83-0d8ba3e68397","originalAuthorName":"季勇"},{"authorName":"周萍","id":"90c6f84c-125d-42ee-9658-54e41ce9b2bb","originalAuthorName":"周萍"},{"authorName":"<span style=\"color:red\">郑</span><span style=\"color:red\">鹉</span>","id":"11577e0f-0201-454c-8219-1eb9548c5d1d","originalAuthorName":"郑鹉"},{"authorName":"王艾玲","id":"8f462b00-7348-486a-9d1a-28cdcc9aee53","originalAuthorName":"王艾玲"},{"authorName":"姜宏伟","id":"b34a14b3-1276-4b53-a697-cfd31ebda279","originalAuthorName":"姜宏伟"}],"doi":"","fpage":"813","id":"3add4d04-3586-4792-856d-a4c1f0ca4b17","issue":"z1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"b56fde7a-f8cd-4857-b7fa-4184285df14a","keyword":"各向异性磁电阻(AMR)","originalKeyword":"各向异性磁电阻(AMR)"},{"id":"955a1109-de19-4ea4-af38-25deecc88efc","keyword":"织构","originalKeyword":"织构"},{"id":"5aca2f98-031d-4a2c-8287-a0a3839541e8","keyword":"晶粒尺寸","originalKeyword":"晶粒尺寸"},{"id":"6944dca6-2a2c-49e3-bf29-66075e3d6e55","keyword":"NiCo薄膜","originalKeyword":"NiCo薄膜"}],"language":"zh","publisherId":"gncl2004z1229","title":"退火对NiCo薄膜各向异性磁电阻(AMR)的影响","volume":"35","year":"2004"},{"abstractinfo":"利用磁控溅射方法制备Co/C和Co-Pt/C薄膜.用X射线衍射谱(XRD)和透射电子显微镜(TEM)测量样品结构和微观形貌.对Co/C和Co-Pt/C晶粒的大小进行计算,表明Co/C颗粒膜Co是以团簇的形式镶嵌在C层中的,面心立方(fcc)COPt3和面心四方(fct)Copt两个稳定有序相在Co-Pt/C薄膜中很好地藕合.","authors":[{"authorName":"孙智勇","id":"715d1c56-ee19-4bb5-a75f-766f488684c0","originalAuthorName":"孙智勇"},{"authorName":"赵志明","id":"b6219069-900b-4d6a-84f4-8768c74fb12b","originalAuthorName":"赵志明"},{"authorName":"王宝纯","id":"0079bfd0-0c42-42f8-a45a-5db5e8bd181c","originalAuthorName":"王宝纯"},{"authorName":"姜宏伟","id":"e5594291-3600-4ba3-a86c-6fdb2a555b0e","originalAuthorName":"姜宏伟"},{"authorName":"王艾玲","id":"6e4a2db4-6c7c-4333-94a5-f9da7af9ce77","originalAuthorName":"王艾玲"},{"authorName":"<span style=\"color:red\">郑</span><span style=\"color:red\">鹉</span>","id":"c7a42548-dff3-44c4-8328-5cd07371a4c5","originalAuthorName":"郑鹉"}],"doi":"","fpage":"33","id":"97423510-edc7-4ced-b1db-ea41da08a63f","issue":"5","journal":{"abbrevTitle":"JSGNCL","coverImgSrc":"journal/img/cover/JSGNCL.jpg","id":"46","issnPpub":"1005-8192","publisherId":"JSGNCL","title":"金属功能材料"},"keywords":[{"id":"ab559e3c-1eef-4e43-b743-f144b3c3b902","keyword":"磁记录","originalKeyword":"磁记录"},{"id":"8106304b-e7b2-4737-8b06-1a48656108bd","keyword":"磁控溅射","originalKeyword":"磁控溅射"},{"id":"26cf0f9d-8622-43c4-adb2-de56e001b41d","keyword":"薄膜","originalKeyword":"薄膜"}],"language":"zh","publisherId":"jsgncl201105008","title":"Co/C与Co-Pt/C膜的微结构研究","volume":"18","year":"2011"},{"abstractinfo":"在康宁玻璃上用真空蒸镀法沉积NiFeSiMnMo单层膜、NiFeSiMnMo/Cu双层膜和NiFeSiMnMo/Cu/Ni-FeSiMnMo多层膜.对单层膜和双层膜的软磁性能进行了分析,对多层膜的巨磁阻抗效应随Cu层宽度的变化进行了研究.实验研究表明,NiFeSiMoMn/Cu双层膜比NiFeSiMnMo单层膜矫顽力小、饱和磁化强度高;多层膜Ni-FeSiMnMo/Cu/NiFeSiMnMo随着Cu层宽度的增加巨磁阻抗比上升到一个最大值后下降,在磁性层宽度3mm的情况下,Cu层宽度在0.7mm时,巨磁阻抗比最大.","authors":[{"authorName":"孙智勇","id":"ad83d93d-70e0-4ebd-a90d-cb156e1b820f","originalAuthorName":"孙智勇"},{"authorName":"赵志明","id":"20d9bddc-6a00-4d7a-9e67-be8aea1a57c7","originalAuthorName":"赵志明"},{"authorName":"季勇","id":"4a5067bd-1d55-461f-9ff2-2ecdd3f5afc1","originalAuthorName":"季勇"},{"authorName":"<span style=\"color:red\">郑</span><span style=\"color:red\">鹉</span>","id":"073ac297-f1b7-4ba2-9fd3-19ef8157021c","originalAuthorName":"郑鹉"},{"authorName":"王艾玲","id":"33bdb4ed-633d-4d24-bd05-241abced613a","originalAuthorName":"王艾玲"},{"authorName":"姜宏伟","id":"8cfba6e1-3925-4b7f-b33f-3ab9a47e1e05","originalAuthorName":"姜宏伟"}],"doi":"","fpage":"4","id":"978f75f0-020b-46e7-b401-f7100cf1ec38","issue":"5","journal":{"abbrevTitle":"JSGNCL","coverImgSrc":"journal/img/cover/JSGNCL.jpg","id":"46","issnPpub":"1005-8192","publisherId":"JSGNCL","title":"金属功能材料"},"keywords":[{"id":"5b520ad6-289b-4b4e-b0e2-c908a1e8f4b5","keyword":"巨磁阻抗","originalKeyword":"巨磁阻抗"},{"id":"bae23712-0883-4054-a7ca-b1aa30009ae3","keyword":"坡莫合金","originalKeyword":"坡莫合金"},{"id":"434cc66c-707e-4f86-93f3-c90ff95bcc0e","keyword":"多层膜","originalKeyword":"多层膜"}],"language":"zh","publisherId":"jsgncl200805002","title":"NiFeSiMnMo/Cu/NiFeSiMnMo多层膜中Cu层对巨磁阻抗效应的影响","volume":"15","year":"2008"},{"abstractinfo":"回顾电感和电阻的阻抗,对磁性导体的阻抗进行分析,对封闭式的三明治模型阻抗用Maxwell磁矢量方程和Landau-Lifshitz方程计算进行分析;对制作巨磁阻抗传感器元件的材料进行比较;对巨磁阻抗线性传感器电路、三轴巨磁阻抗效应传感器电路、GMI传感器低功耗测量集成电路进行分析和总结.","authors":[{"authorName":"孙智勇","id":"8704f3e3-9d4c-4bfd-859a-02d8ecb6fcc5","originalAuthorName":"孙智勇"},{"authorName":"赵志明","id":"1acf3f92-291e-4fe5-a171-49b3fa79301d","originalAuthorName":"赵志明"},{"authorName":"<span style=\"color:red\">郑</span><span style=\"color:red\">鹉</span>","id":"12ba420f-911b-43c2-ab5e-a1fef6a44355","originalAuthorName":"郑鹉"},{"authorName":"王艾玲","id":"a17b4b20-8b29-4cac-9b08-c6b98ce87d7c","originalAuthorName":"王艾玲"},{"authorName":"姜宏伟","id":"a62d12e0-38eb-45eb-944b-fc19b19887e7","originalAuthorName":"姜宏伟"},{"authorName":"王霞","id":"e04722e5-d7cf-4e1e-afd3-86696a286034","originalAuthorName":"王霞"}],"doi":"","fpage":"22","id":"a0afd335-8772-423c-8c74-3d2a6479e48f","issue":"5","journal":{"abbrevTitle":"JSGNCL","coverImgSrc":"journal/img/cover/JSGNCL.jpg","id":"46","issnPpub":"1005-8192","publisherId":"JSGNCL","title":"金属功能材料"},"keywords":[{"id":"e7af27f5-ce96-49b9-90b0-a6907f465d09","keyword":"巨磁阻抗效应","originalKeyword":"巨磁阻抗效应"},{"id":"71ba0c58-e50e-4675-91ff-f7e946a4f77b","keyword":"巨磁阻抗效应传感器","originalKeyword":"巨磁阻抗效应传感器"},{"id":"8e5a51ec-a5ae-4669-a94b-aa757646d1bc","keyword":"阻抗测量","originalKeyword":"阻抗测量"}],"language":"zh","publisherId":"jsgncl201005006","title":"巨磁阻抗效应及其传感器","volume":"17","year":"2010"},{"abstractinfo":"观察用蒸镀法制备的NiFeSiMnMo/Cu/NiFeSiMnMo多层膜的巨磁阻抗效应,经过退火后,得到性能优良的坡莫合金材料,研究了GMI效应与交变电流频率f和外加直流磁场H的关系,样品在3MHz的频率下能够获得一个14.9%的非线性巨磁阻抗效应.","authors":[{"authorName":"孙智勇","id":"037442ab-c917-4710-9c03-c90ecfe73e9e","originalAuthorName":"孙智勇"},{"authorName":"<span style=\"color:red\">郑</span><span style=\"color:red\">鹉</span>","id":"448b712a-6ead-4612-9667-93978e7dfa97","originalAuthorName":"郑鹉"},{"authorName":"王艾玲","id":"a838c311-f630-4ecb-b0fa-121aad5bbcf4","originalAuthorName":"王艾玲"},{"authorName":"姜宏伟","id":"3f4022e5-37a0-476e-8328-e0c135782ed6","originalAuthorName":"姜宏伟"}],"doi":"10.3969/j.issn.1005-8192.2005.02.002","fpage":"5","id":"b935d60d-aacf-478d-a400-d98ae3a40069","issue":"2","journal":{"abbrevTitle":"JSGNCL","coverImgSrc":"journal/img/cover/JSGNCL.jpg","id":"46","issnPpub":"1005-8192","publisherId":"JSGNCL","title":"金属功能材料"},"keywords":[{"id":"7600fd8c-7082-4502-a9bc-ac923e1a3386","keyword":"巨磁阻抗","originalKeyword":"巨磁阻抗"},{"id":"8783af54-0513-4614-a9b0-76b6c7105ff2","keyword":"坡莫合金","originalKeyword":"坡莫合金"},{"id":"d4f7fac2-c0f6-480b-8350-ba77a4815ab8","keyword":"多层膜","originalKeyword":"多层膜"}],"language":"zh","publisherId":"jsgncl200502002","title":"NiFeSiMnMo/CU/NiFeSiMnMo多层膜的非线性巨磁阻抗效应","volume":"12","year":"2005"},{"abstractinfo":"采用磁控溅射方法制备了Co/Ni多层膜并做了热处理,测量了系列样品的结构、磁性和磁电阻.受热处理条件等因素影响,多层膜的层间磁性耦合性质发生变化,电阻率下降,而其各向异性磁电阻的数值没有一致的变化趋势.讨论了磁性层织构和界面对多层膜的磁性与各向异性磁电阻效应的影响.","authors":[{"authorName":"王艾玲","id":"617850f8-aa76-4e92-ad8e-8e5c12d971f4","originalAuthorName":"王艾玲"},{"authorName":"周云松","id":"e596039b-7bc0-430d-9994-03eb64c4b753","originalAuthorName":"周云松"},{"authorName":"闵子建","id":"b1e0f978-d976-4229-92de-3d1685373f20","originalAuthorName":"闵子建"},{"authorName":"陈金昌","id":"5d1656bc-097d-46e5-b36e-923af376a22f","originalAuthorName":"陈金昌"},{"authorName":"<span style=\"color:red\">郑</span><span style=\"color:red\">鹉</span>","id":"c1f1e48a-fc50-43a2-81e4-a207229c7062","originalAuthorName":"郑鹉"}],"doi":"","fpage":"64","id":"e2bfc3ca-c189-4d56-a3cc-33bdf1421f6b","issue":"5","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"c997b159-3892-4d8a-94a7-6c5eb136fd09","keyword":"Co/Ni多层膜","originalKeyword":"Co/Ni多层膜"},{"id":"ac4f4d06-d04a-4eed-a25e-ef3f0a24190b","keyword":"各向异性磁电阻","originalKeyword":"各向异性磁电阻"},{"id":"f7201599-f525-4193-bb45-88624e810fb9","keyword":"磁性","originalKeyword":"磁性"},{"id":"0d3674e1-5a85-4f3c-b5e0-f7e9f18b9a47","keyword":"织构","originalKeyword":"织构"}],"language":"zh","publisherId":"cldb200105022","title":"Co/Ni多层膜的热处理研究","volume":"15","year":"2001"}],"totalpage":3,"totalrecord":24}