{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"本文利用Bi2O3作为烧结促进剂实现了NiCuZn铁氧体在900℃以下烧结.利用TG、DTA、DDTA等分析手段研究Bi2O3的低温烧结机理,并确定最佳烧结温度范围在840~900℃之间.X-ray分析结果表明:加入Bi2O3后生成另相化合物Bi36Fe2O57烧结后期少量Fe的固溶有助于稳定高温γ-Bi2O3相的立方结构,避免了冷却过程中的晶型转变.Bi36Fe2O57另相的存在能有效地阻止晶粒长大,从而达到改性的目的.","authors":[{"authorName":"何新华","id":"dd7f02cd-f5d0-42bf-831c-c4f14cac4aed","originalAuthorName":"何新华"},{"authorName":"熊茂仁","id":"83061c9b-3807-48ff-b05c-c4789ffb11eb","originalAuthorName":"熊茂仁"},{"authorName":"凌志远","id":"8768eec7-f554-48ab-8f69-8c3fd87b4526","originalAuthorName":"凌志远"},{"authorName":"丘其春","id":"21445d5f-bce3-46a0-8813-6d2d0fb785ea","originalAuthorName":"丘其春"}],"categoryName":"|","doi":"","fpage":"71","id":"4cfa93eb-dd1a-4564-9164-69f0d8ac706c","issue":"1","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"c1599278-b6f4-43d5-ba71-f5f750b78144","keyword":"多层片式电感器","originalKeyword":"多层片式电感器"},{"id":"571b34f5-543b-44ce-b5a5-9cf824e9a2aa","keyword":" ferrite","originalKeyword":" ferrite"},{"id":"ce0bb8c6-a05b-48f2-8102-65cea7a1d7a6","keyword":" NiCuZn system","originalKeyword":" NiCuZn system"},{"id":"5cdb83ab-16e9-4863-aee2-93e918ed8700","keyword":" low-temperature sintering","originalKeyword":" low-temperature sintering"}],"language":"zh","publisherId":"1000-324X_1999_1_27","title":"多层片式电感器用NiCuZn铁氧体的低温烧结","volume":"14","year":"1999"},{"abstractinfo":"本文利用Bi2O3作为烧结促进剂实现了NiCuZn铁氧体在900℃以下烧结. 利用TG、DTA、DDTA等分析手段研究Bi2O3的低温烧结机理,并确定最佳烧结温度范围在840~900℃之间. X-ray分析结果表明:加入Bi2O3后生成另相化合物Bi36Fe2O57. 烧结后期少量Fe的固溶有助于稳定高温γ-Bi2O3相的立方结构,避免了冷却过程中的晶型转变. Bi36Fe2O57另相的存在能有效地阻止晶粒长大,从而达到改性的目的.","authors":[{"authorName":"何新华","id":"321de31f-d0f5-4ac9-a651-0e0739120e81","originalAuthorName":"何新华"},{"authorName":"熊茂仁","id":"3c20386f-f160-40d1-a263-4bbb62776733","originalAuthorName":"熊茂仁"},{"authorName":"凌志远","id":"6531e899-0fd5-49da-aabe-2b4f878b9ddd","originalAuthorName":"凌志远"},{"authorName":"丘其春","id":"85359db5-4777-429d-ba80-054036546afa","originalAuthorName":"丘其春"}],"doi":"10.3321/j.issn:1000-324X.1999.01.012","fpage":"71","id":"1e854153-7feb-4e33-b5c1-3c6f88089588","issue":"1","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"dc3e96d1-fcda-463a-ae0a-dce5e2b580fc","keyword":"多层片式电感器","originalKeyword":"多层片式电感器"},{"id":"6e16f1a6-3194-4af2-b574-237e7b456634","keyword":"铁氧体","originalKeyword":"铁氧体"},{"id":"a99962df-ae81-4c37-805d-84e3b8db941b","keyword":"NiCuZn系","originalKeyword":"NiCuZn系"},{"id":"1e004e61-078d-4a2f-a227-22a3c8a83c15","keyword":"低温烧结","originalKeyword":"低温烧结"}],"language":"zh","publisherId":"wjclxb199901012","title":"多层片式电感器用 NiCuZn铁氧体的低温烧结","volume":"14","year":"1999"},{"abstractinfo":"研究了低温烧结B2O3-P2O5-MgO-Al2O3-SiO2体系的微晶玻璃,及其析晶温度和析晶相特性,实验结果表明:该材料具有低的介电常数和电介质损耗,这种介质能在低于1000℃的温度下与Au,Ag/Pb,Cu等电极共烧,是一种较理想的高频多层片式电感器介质材料.","authors":[{"authorName":"罗凌虹","id":"9806a262-d4ad-4026-888c-d3c31b2d6f1c","originalAuthorName":"罗凌虹"},{"authorName":"周和平","id":"3601eb4e-dcd4-416a-a98d-2fbe9f14ee8a","originalAuthorName":"周和平"},{"authorName":"王少洪","id":"5b3bb4ca-107e-4e62-ae88-f5be5f6b4e9c","originalAuthorName":"王少洪"},{"authorName":"查征","id":"1faf70b5-8132-4b5e-9f5c-00559d4d8e42","originalAuthorName":"查征"}],"doi":"10.3321/j.issn:1000-324X.2001.05.040","fpage":"1009","id":"4447639b-4ce1-49fc-aed1-cedda1f0c43b","issue":"5","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"ac41e5b4-8c44-49df-b5a6-02acdf824c57","keyword":"高频片式电感","originalKeyword":"高频片式电感"},{"id":"257c6022-d9da-4820-a237-848e3b8bfd67","keyword":"低电介质常数的陶瓷材料,低温烧结","originalKeyword":"低电介质常数的陶瓷材料,低温烧结"}],"language":"zh","publisherId":"wjclxb200105040","title":"高频多层片式电感器介质材料的研究","volume":"16","year":"2001"},{"abstractinfo":"综述了近年来国内外多层片式电感器介质材料及其工艺研究的发展现状和方向,介绍了不同的频率段,应选择不同的低烧材料作为器件的介质材料,特别针对有关用于高频MLCIs的低介瓷的研究进行了详细的介绍.同时慨括了多层片式电感器生产的特殊而典型工艺过程.","authors":[{"authorName":"罗凌虹","id":"c8fb049f-2019-4724-8068-8efacf63274d","originalAuthorName":"罗凌虹"},{"authorName":"周和平","id":"0b296c82-d342-47b5-9405-3248c80f3146","originalAuthorName":"周和平"},{"authorName":"黄河激","id":"ba429bd4-9e2a-4544-8f4b-b7b6f51ab47c","originalAuthorName":"黄河激"},{"authorName":"王少洪","id":"19382469-d68c-4fb3-8db1-8ee7cd2f8627","originalAuthorName":"王少洪"}],"doi":"10.3321/j.issn:1000-324X.2001.06.002","fpage":"1032","id":"7718e0e9-3be0-48b1-b17d-4e3f9b5f2c54","issue":"6","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"e30f7077-0797-482c-913e-1a0936dd991e","keyword":"多层片式电感(MLCIs)","originalKeyword":"多层片式电感(MLCIs)"},{"id":"21441c7c-f03c-4f0e-8306-5812e3cb96fc","keyword":"低烧介质材料","originalKeyword":"低烧介质材料"},{"id":"3bd89be9-d84f-4471-9257-be82336c1a1c","keyword":"多层片式工艺","originalKeyword":"多层片式工艺"}],"language":"zh","publisherId":"wjclxb200106002","title":"多层片式电感器介质材料及其工艺的发展现状","volume":"16","year":"2001"},{"abstractinfo":"研究了CaO-B2O3-SiO2体系微晶玻璃烧结工艺、烧结性能和微观结构等.结果表明,该体系陶瓷材料能够在低温850℃烧结,烧结性能良好;烧结体微观结构为大量尺寸和分布均匀的纳米晶粒、一定量残余玻璃相和少量气孔,烧结体的主晶相为CB(CaO@B2O3)、6C4S(6CaO@4SiO2)以及少量CS(CaO@SiO2).该烧结体在高频下具有低介电常数(εr=5.058,1GHz)、低介电损耗(tgδ=0.0013,1GHz).该材料能够在900℃和Au、Ag/Pd、Cu等电极材料共烧,是制造高频多层片式电感器的理想材料.","authors":[{"authorName":"王少洪","id":"589e1aaf-543c-47e9-a69a-7d6952ff8607","originalAuthorName":"王少洪"},{"authorName":"周和平","id":"8a2403cf-8e65-41ba-a3cb-b30dac76efdc","originalAuthorName":"周和平"},{"authorName":"乔梁","id":"5bbc9bf5-b740-479b-ba55-ea7a7266efe5","originalAuthorName":"乔梁"}],"doi":"10.3969/j.issn.1000-3738.2003.02.006","fpage":"17","id":"c7852bd1-ff68-4271-b4d5-29255f419ea4","issue":"2","journal":{"abbrevTitle":"JXGCCL","coverImgSrc":"journal/img/cover/JXGCCL.jpg","id":"45","issnPpub":"1000-3738","publisherId":"JXGCCL","title":"机械工程材料"},"keywords":[{"id":"8ac59ae4-3329-4131-8638-60bee5e77fa5","keyword":"高频片式电感器","originalKeyword":"高频片式电感器"},{"id":"65cb5594-679e-43db-83f2-8482385f61af","keyword":"低介电低损耗","originalKeyword":"低介电低损耗"},{"id":"507df80f-922f-4cb8-b04f-3d60fe0fc2fa","keyword":"低温烧结","originalKeyword":"低温烧结"}],"language":"zh","publisherId":"jxgccl200302006","title":"高频多层片式电感器用陶瓷材料的研究","volume":"27","year":"2003"},{"abstractinfo":"综述了国内外多层片式电感发展现状和前景,介绍了近年来多层片式电感器及其材料的研究现状,列举了目前应用于不同频率段的多层片式电感低烧材料,并介绍了用于高频多层片式电感器的低介材料,同时概括了多层片式电感器生产的一般工艺.","authors":[{"authorName":"王少洪","id":"acf9b911-4bde-4c03-b6b0-2f94177b908d","originalAuthorName":"王少洪"},{"authorName":"周和平","id":"95ddd504-323f-4c94-a9c1-baa5b4d68108","originalAuthorName":"周和平"},{"authorName":"罗凌虹","id":"f77d4f5e-2d51-4d8c-8825-188a94145cdd","originalAuthorName":"罗凌虹"},{"authorName":"黄河激","id":"d5f041f8-5cb7-4663-85af-2727791993a1","originalAuthorName":"黄河激"}],"doi":"10.3969/j.issn.1000-3738.2002.06.001","fpage":"1","id":"317c48d8-2ea7-48fd-b4b7-acb86132697d","issue":"6","journal":{"abbrevTitle":"JXGCCL","coverImgSrc":"journal/img/cover/JXGCCL.jpg","id":"45","issnPpub":"1000-3738","publisherId":"JXGCCL","title":"机械工程材料"},"keywords":[{"id":"36a3e956-c365-47e4-8645-71b220dbe74e","keyword":"多层片式电感","originalKeyword":"多层片式电感"},{"id":"5a3e199b-5856-4a71-9051-a5ef953dc3af","keyword":"低介","originalKeyword":"低介"},{"id":"02f2122e-1b21-4851-8d0f-ebf1b03d09fe","keyword":"低烧介质材料","originalKeyword":"低烧介质材料"},{"id":"eebaa2e7-e84d-4d4d-8a62-5a04dfc9a3b3","keyword":"多层片式化工艺","originalKeyword":"多层片式化工艺"}],"language":"zh","publisherId":"jxgccl200206001","title":"多层片式电感及其材料的研究与发展","volume":"26","year":"2002"},{"abstractinfo":"片式化元器件是目前电子信息业热门话题,片式电感器更是片式器件研究的重中之重.本文介绍和评述了片式电感的主要制备方法,工艺关键,国内外研究现状,发展方向,并重点介绍了片式电感器用材料的研究现状,同时展望了片式电感的市场应用前景.","authors":[{"authorName":"王长振","id":"0dba49fa-6697-4d0c-bed4-283a6a14ead4","originalAuthorName":"王长振"},{"authorName":"谭维","id":"6a933962-0f48-416e-a202-1b38fa4a88b1","originalAuthorName":"谭维"},{"authorName":"周甘宇","id":"39fa01f9-1331-4102-a2f1-d7397a560217","originalAuthorName":"周甘宇"},{"authorName":"章四琪","id":"adac9047-5190-49ad-989a-c05730f56b99","originalAuthorName":"章四琪"}],"doi":"10.3969/j.issn.1005-8192.2002.03.003","fpage":"9","id":"6a6be260-ffec-4f67-8a8c-512be4830e5d","issue":"3","journal":{"abbrevTitle":"JSGNCL","coverImgSrc":"journal/img/cover/JSGNCL.jpg","id":"46","issnPpub":"1005-8192","publisherId":"JSGNCL","title":"金属功能材料"},"keywords":[{"id":"9323aa35-bd15-4bf4-b744-1e82412741b2","keyword":"片式电感","originalKeyword":"片式电感"},{"id":"4b8401ce-215d-488a-a02a-c4c4e02e5ac4","keyword":"研究现状","originalKeyword":"研究现状"},{"id":"fbf95f0b-a3f2-4206-a939-0b40cb1127ef","keyword":"应用","originalKeyword":"应用"},{"id":"02c27920-35f8-4d81-9455-cb5269935976","keyword":"Ni-Cu-Zn铁氧体","originalKeyword":"Ni-Cu-Zn铁氧体"}],"language":"zh","publisherId":"jsgncl200203003","title":"片式电感和材料的研究现状及应用前景","volume":"9","year":"2002"},{"abstractinfo":"目的:优化电感器线圈电镀工艺,研究电感线圈电镀过程中电流、电解质电势和镀层厚度分布规律。方法采用计算机仿真技术,基于电镀动力学、电化学理论、法拉第定理和移动网格理论,建立电感线圈匝数参数化的三维电感器线圈电镀模型。结果电感线圈外部的铜离子浓度较高,大约为309 mol/ m3。电感线圈最外圈的电镀厚度最厚,约7.3141μm。线圈外部较大的电流导致电镀线圈外侧出现较大的沉积速率。结论电解的铜离子的质量传递是影响电镀动力学的最主要因素,线圈电镀层厚度与电镀活性面上的电流分布相互作用。该电镀模型可用于分析线圈匝数对电镀工艺的影响,优化设计类似电镀工艺,研究电镀机理。","authors":[{"authorName":"樊爱珍","id":"8f596f44-f9f1-4b34-82d1-3270a8ca50c7","originalAuthorName":"樊爱珍"}],"doi":"","fpage":"25","id":"34d1b5fb-2a7b-4c56-a94e-ce2773d246c4","issue":"5","journal":{"abbrevTitle":"BMJS","coverImgSrc":"journal/img/cover/BMJS.jpg","id":"3","issnPpub":"1001-3660","publisherId":"BMJS","title":"表面技术 "},"keywords":[{"id":"7baa8db1-9533-4b04-b134-f070f8e2d703","keyword":"电镀动力学","originalKeyword":"电镀动力学"},{"id":"928a126e-c0bf-4d8c-a65c-f0596c2d6763","keyword":"移动网格","originalKeyword":"移动网格"},{"id":"8eb55a89-0e2d-4985-94fb-85bb27853436","keyword":"计算机仿真","originalKeyword":"计算机仿真"},{"id":"1010d6cd-6838-40c2-bb92-c9e3bfc9d0be","keyword":"电镀模型","originalKeyword":"电镀模型"}],"language":"zh","publisherId":"bmjs201405006","title":"基于有限元的电感器线圈镀铜工艺仿真分析","volume":"","year":"2014"},{"abstractinfo":"叙述了片式ZnO压敏电阻的特点,以及ZnO-V2O5系、ZnO-玻璃系两种新型压敏电阻材料的近期研究成果,提出了片式压敏电阻今后的主要研究方向.","authors":[{"authorName":"付明","id":"c6e43ca5-4ef4-4a71-8925-e8980f48c548","originalAuthorName":"付明"},{"authorName":"周东祥","id":"edb6938a-71ce-46d6-816b-c17f07ee6de2","originalAuthorName":"周东祥"},{"authorName":"龚树萍","id":"5d3b9b10-a22b-4725-86aa-bc706d07f8dd","originalAuthorName":"龚树萍"},{"authorName":"张道礼","id":"b107b66a-ce11-48d2-ae73-2eb008615015","originalAuthorName":"张道礼"}],"doi":"","fpage":"39","id":"5fd76c48-480d-4d78-b215-842822791daa","issue":"9","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"2c591a8a-b738-4429-8eea-63965d1e5a68","keyword":"多层片式压敏电阻","originalKeyword":"多层片式压敏电阻"},{"id":"1c499af4-ab2a-4eef-a513-82b321756a9a","keyword":"低温烧结","originalKeyword":"低温烧结"},{"id":"93eda20c-a4b1-4b72-b05c-61f30982c470","keyword":"非欧姆特性","originalKeyword":"非欧姆特性"}],"language":"zh","publisherId":"cldb200009013","title":"多层片式ZnO压敏电阻研究进展","volume":"14","year":"2000"},{"abstractinfo":"利用复合结构原理,研制出“硼硅玻璃+α-石英+硅酸锌”系低烧低介陶瓷材料,利用XRD、HP4194频谱仪、SEM分析了该材料的晶相组成、介电性能及显微结构.结果表明:在高频下,该材料具有很低的介电常数(=4~5,1MHz)和很低的介电损耗(tanδ<0.001,1MHz);同时能在低于900℃温度下烧结.该材料是一种理想的适用于高频(1GHz以上)多层片式电感(MLCIs)元件用的介质材料.同时得出:在该组成中,硼硅玻璃重烧结的过程中有方石英析出;少量硅酸锌由于锌离子进入玻璃中而转变为亚硅酸锌;硅酸锌在该组成中有助烧结的作用,该材料介电性能随频率的变化与德拜方程的描述基本吻合.","authors":[{"authorName":"罗凌虹","id":"29128ba6-bc93-49ab-9f52-a9cdde824795","originalAuthorName":"罗凌虹"},{"authorName":"周和平","id":"d76a016d-83ac-4605-b8b3-2094dd92f557","originalAuthorName":"周和平"},{"authorName":"彭榕","id":"fb422293-6280-448c-b994-5f8f53afdbc3","originalAuthorName":"彭榕"},{"authorName":"乔梁","id":"f84291c4-2610-42e4-8a23-fbf392a06a18","originalAuthorName":"乔梁"}],"categoryName":"|","doi":"","fpage":"497","id":"e52e5879-482d-425e-bd4e-6b5e7ad0cc9f","issue":"3","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"3a725d28-1527-43a9-9541-87fca3620196","keyword":"“硼硅玻璃+α-石英+硅酸锌”","originalKeyword":"“硼硅玻璃+α-石英+硅酸锌”"},{"id":"0e045741-9421-4207-b4f0-961295f9f319","keyword":" dielectric materials","originalKeyword":" dielectric materials"},{"id":"9edda409-b377-4f27-961c-10cafb2c4fbd","keyword":" high frequency MLCIs","originalKeyword":" high frequency MLCIs"}],"language":"zh","publisherId":"1000-324X_2002_3_13","title":"一种低烧、低介、高频多层片式电感用的介质材料","volume":"17","year":"2002"}],"totalpage":1260,"totalrecord":12592}