{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"为了满足<span style=\"color:red\">全局</span><span style=\"color:red\">曝光</span>模式下对高动态范围CMOS相机需求,基于CIS-2521 sCMOS器件设计出一个相机系统,通过研究CIS-2521芯片像素读出结构特点和<span style=\"color:red\">全局</span><span style=\"color:red\">曝光</span>模式下驱动时序特点,选用FPGA搭载DDR3作为处理架构,在FP-GA内部完成了成像参数控制,sCMOS驱动时序,图像数据采集,图像预处理等SOPC片上一体化设计,并对各个模块功能进行了介绍.设计的相机系统进行成像测试,实现了连续输出50帧/s,2 560×2 160像素,14 bit有效深度的高清晰度高动态范围图像,基本满足科学级成像条件的需求.","authors":[{"authorName":"何舒文","id":"9e37141c-9fee-4339-8ade-c3756b4166be","originalAuthorName":"何舒文"},{"authorName":"王延杰","id":"03d343f0-3e4d-4ff1-9b16-7d1182bea7fd","originalAuthorName":"王延杰"},{"authorName":"孙宏海","id":"d59d07ce-13cc-40a2-a81a-b42646c68fc5","originalAuthorName":"孙宏海"},{"authorName":"张雷","id":"1fd167d6-cc35-4556-a52a-1c0864ea0a23","originalAuthorName":"张雷"},{"authorName":"吴培","id":"756714e4-cdb8-4826-8ec8-064af6dbba79","originalAuthorName":"吴培"}],"doi":"10.3788/YJYXS20153004.0729","fpage":"729","id":"6c9962a7-d1e2-4bd6-adf3-164593d9e700","issue":"4","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"14706397-ca54-4e3d-90b6-5847bfcfc9c5","keyword":"科学级CMOS","originalKeyword":"科学级CMOS"},{"id":"059fd8cd-151c-4c1a-a8a8-b9dbcbced304","keyword":"高动态","originalKeyword":"高动态"},{"id":"2442b005-5bc4-48ff-94ed-4c81946164ad","keyword":"<span style=\"color:red\">全局</span><span style=\"color:red\">曝光</span>","originalKeyword":"全局曝光"},{"id":"5225e1bc-40aa-4bc9-b495-7804073f4cf0","keyword":"图像处理","originalKeyword":"图像处理"}],"language":"zh","publisherId":"yjyxs201504028","title":"高动态科学级CMOS相机系统的设计","volume":"30","year":"2015"},{"abstractinfo":"为了满足高动态范围高灵敏度的<span style=\"color:red\">全局</span><span style=\"color:red\">曝光</span>模式下成像系统的需求,基于CIS-2521科学级CMOS图像传感器设计了一个相机系统,通过分析CIS-2521芯片像素读出结构特点,通过芯片内部模拟相关双采样与FPGA片内数字域相关双采样完成相关四采样算法,列向噪声去除效果明显.通过设计曲线拟合双增益通道图像数据合成输出,保证了系统成像有较高输出动态范围.相机常温下输出图像峰值信噪比达62.9 dB,采用半导体制冷后输出图像峰值信噪比74.3 dB.根据EMVA1288标准实测相机动态范围达到78.2 dB,设计的相机系统实现了每秒50帧2 560×2 160像素,16 bit深度高清晰度高动态范围图像的实时<span style=\"color:red\">全局</span><span style=\"color:red\">曝光</span>成像输出,能够满足低照度条件下的高帧频高动态范围成像的需求.","authors":[{"authorName":"孙宏海","id":"60d9a03c-476c-4942-831b-b1972efd802a","originalAuthorName":"孙宏海"},{"authorName":"何舒文","id":"1881c17d-8d91-40f3-a559-4a2772f14e8a","originalAuthorName":"何舒文"},{"authorName":"吴培","id":"22e43307-b3d4-4963-9302-9a488da5f8b3","originalAuthorName":"吴培"},{"authorName":"王延杰","id":"d9ae34cd-564b-4394-8c4c-f47f054d2fe2","originalAuthorName":"王延杰"}],"doi":"10.3788/YJYXS20173203.0240","fpage":"240","id":"df1a0b5c-4fbf-4b00-8412-8fcbf83eb0fb","issue":"3","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"420b4e40-615b-434e-b26d-580fdae85332","keyword":"<span style=\"color:red\">全局</span><span style=\"color:red\">曝光</span>","originalKeyword":"全局曝光"},{"id":"c9ca871d-e557-403f-ab73-b3b775f98008","keyword":"科学级CMOS","originalKeyword":"科学级CMOS"},{"id":"42dd0cf0-e5b3-4548-996d-d5a7be875697","keyword":"相关四采样","originalKeyword":"相关四采样"},{"id":"c2f10409-9f68-42a4-b549-b1ab323f6e53","keyword":"噪声抑制","originalKeyword":"噪声抑制"},{"id":"3b076b6d-9250-4a4e-b56c-930c336faa1c","keyword":"高动态范围","originalKeyword":"高动态范围"}],"language":"zh","publisherId":"yjyxs201703012","title":"高动态科学级CMOS相机设计与成像分析","volume":"32","year":"2017"},{"abstractinfo":"在分析PDP<span style=\"color:red\">曝光</span>特点的基础上, 提出了PDP<span style=\"color:red\">曝光</span>台的设计原则, 说明了PDP<span style=\"color:red\">曝光</span>时的照度分布调整方法以及校正透镜的原理、作用和加工方法, 对使用光量计精确控制<span style=\"color:red\">曝光</span>量以及<span style=\"color:red\">曝光</span>台超高压水银灯的特点、作用和选择作了详细介绍. 介绍了<span style=\"color:red\">曝光</span>工艺中利用光量计确定感光材料界限<span style=\"color:red\">曝光</span>量的原理和方法, 最后对PDP丝网<span style=\"color:red\">曝光</span>工艺作了简要介绍. ","authors":[{"authorName":"卜忍安","id":"f44fdf6c-69da-4654-9415-d487249f8320","originalAuthorName":"卜忍安"},{"authorName":"张","id":"07c19203-280c-454a-b346-a8d365d409ff","originalAuthorName":"张"},{"authorName":"军","id":"4c017695-ddfb-4344-9c8a-5f76b839a56c","originalAuthorName":"军"},{"authorName":"张劲涛","id":"5a00296e-1a0c-4500-9722-8f883e7c19ca","originalAuthorName":"张劲涛"}],"doi":"10.3969/j.issn.1007-2780.2001.03.009","fpage":"214","id":"7b5a6e11-5875-4180-ab1f-ce0b48e48ad7","issue":"3","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"1da82d82-87a6-49c9-88ed-d5615979382e","keyword":"PDP","originalKeyword":"PDP"},{"id":"d1cb7e6e-f402-4476-9bb3-c76983973e63","keyword":"<span style=\"color:red\">曝光</span>台","originalKeyword":"曝光台"},{"id":"7c1d873b-e0b3-40e0-9af8-639735c6fb5b","keyword":"照度分布","originalKeyword":"照度分布"},{"id":"064c8b7a-bf64-40c0-ab23-4a808c49052b","keyword":"感光域","originalKeyword":"感光域"}],"language":"zh","publisherId":"yjyxs200103009","title":"PDP制造中的<span style=\"color:red\">曝光</span>技术研究","volume":"16","year":"2001"},{"abstractinfo":"Ⅰ-线光致抗蚀剂可以同时被电子束和光学<span style=\"color:red\">曝光</span>系统<span style=\"color:red\">曝光</span>,在50KV加速电压下,其<span style=\"color:red\">曝光</span>剂量为50-100μC/cm2,<span style=\"color:red\">曝光</span>后在0.7%NaOH溶液内显影1min.其灵敏度比PMMA快5倍,分辨率为0.5μm.采用两种方法制备GaAs PHEMT,首先,用I线光致抗蚀剂,源、漏及栅的全部都采用电子束<span style=\"color:red\">曝光</span>,制备了0.5μm栅长的GaAs PHEMT.将源、漏及栅分割成两部分,其中的精细部分由电子束<span style=\"color:red\">曝光</span>,其余部分由光学<span style=\"color:red\">曝光</span>系统<span style=\"color:red\">曝光</span>,用这种方法制备了0.25μm栅长的GaAs PHEMT.","authors":[{"authorName":"刘明","id":"c0638663-9788-4dc1-9f6e-2b778ea8729c","originalAuthorName":"刘明"},{"authorName":"陈宝钦","id":"e1f8d1b2-0924-4590-b2c5-d624d5554e1e","originalAuthorName":"陈宝钦"},{"authorName":"刘小伟","id":"ac92e3dc-1340-4d2e-b601-599cc359407c","originalAuthorName":"刘小伟"},{"authorName":"尉林鹏","id":"f413ab40-6b14-4951-8d8e-5a786a0151ec","originalAuthorName":"尉林鹏"},{"authorName":"吴德馨","id":"7724f5da-4e9c-439c-b267-635513363502","originalAuthorName":"吴德馨"}],"doi":"10.3969/j.issn.1007-4252.2000.04.030","fpage":"416","id":"387eba9c-3014-4737-9be7-859238e04b25","issue":"4","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"cd0ffab0-c07a-48c6-addd-395e095c7813","keyword":"Ⅰ-线光致抗蚀剂","originalKeyword":"Ⅰ-线光致抗蚀剂"},{"id":"03b06824-56e0-44b3-85af-dd58fc1d9b69","keyword":"栅长","originalKeyword":"栅长"},{"id":"320fd859-ac88-4ccd-a36a-5c9cf797726b","keyword":"混合与匹配光刻","originalKeyword":"混合与匹配光刻"}],"language":"zh","publisherId":"gnclyqjxb200004030","title":"电子束和接触式<span style=\"color:red\">曝光</span>机的匹配和混合<span style=\"color:red\">曝光</span>","volume":"6","year":"2000"},{"abstractinfo":"传统的<span style=\"color:red\">全局</span>调光算法无法显著提高对比度和降低功耗.鉴于此,文章提出了基于图像分类的<span style=\"color:red\">全局</span>调光算法,并基于FPGA硬件平台,参照数字高清显示的逻辑和时序标准,用VHDL硬件描述语言进行算法实现,对1920×1080像素高清视频的像素数据和背光亮度同时进行调整,从而实现显著提高高清显示器对比度和显著降低高清显示器功耗的目的.实验结果表明,该系统能够达到设计指标,且具有稳定可靠、通用性好、可移植性强等特点.","authors":[{"authorName":"朱尧","id":"e8b4615e-0908-46c9-9d28-102b6e520443","originalAuthorName":"朱尧"},{"authorName":"赵龙彪","id":"3bf58c4f-eeb0-4e05-8278-a4a052db8c66","originalAuthorName":"赵龙彪"},{"authorName":"韩东","id":"8b8c46fa-e797-440c-89ba-84e43e6cb877","originalAuthorName":"韩东"},{"authorName":"方勇","id":"5e5b0ee8-cbc9-49ee-b98f-7b44a779740b","originalAuthorName":"方勇"}],"doi":"10.3788/YJYXS20132805.0742","fpage":"742","id":"43d3188d-0c11-4bc4-9bbe-74296b051c21","issue":"5","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"18dc19e2-74a6-47de-b4bb-e8d4e580470c","keyword":"FPGA","originalKeyword":"FPGA"},{"id":"c699f4d5-60af-4169-9cae-065f2f592832","keyword":"像素","originalKeyword":"像素"},{"id":"ddb87bf8-3c0b-4d8d-a057-a4499e55c07a","keyword":"图像分类","originalKeyword":"图像分类"},{"id":"b9b78e09-d222-42ed-a789-5e657a7c8c1a","keyword":"对比度","originalKeyword":"对比度"},{"id":"28e464d6-adb4-4cd4-bd4b-44dbf1d0d8ba","keyword":"功耗","originalKeyword":"功耗"}],"language":"zh","publisherId":"yjyxs201305018","title":"基于图像分类的<span style=\"color:red\">全局</span>调光算法的FPGA实现","volume":"28","year":"2013"},{"abstractinfo":"基于单质<span style=\"color:red\">全局</span>物态方程模型QEOS(Quotidian equation of state),通过求解平均原子模型的混合物Thomas-Fermi方程以及将混合元素平均为单一虚拟元素的方法得到了混合物状态方程.对铅铋混合物LBE的物态方程做了初步研究,计算了LBE在给定温度与密度下的压强、电离度等,并分析了电离平衡和不同温度、密度下电子及离子对总压强的贡献.","authors":[{"authorName":"林平","id":"ac014a23-d479-451b-88ce-9ca527335e2f","originalAuthorName":"林平"},{"authorName":"闫雪松","id":"d041d76b-b9c4-491a-ac54-b873356bf361","originalAuthorName":"闫雪松"},{"authorName":"杨阳阳","id":"0bc976dd-443f-4d61-b179-22023117cc6a","originalAuthorName":"杨阳阳"},{"authorName":"刘斌杰","id":"1d29f188-5207-4ad1-9cf5-005a0bca136a","originalAuthorName":"刘斌杰"}],"doi":"","fpage":"1","id":"8022bfbf-ddb8-4515-8e02-ba440e40d3e2","issue":"24","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"d9f1011e-b90f-4dc3-a8a8-7b2b13c4c8fa","keyword":"混合物状态方程","originalKeyword":"混合物状态方程"},{"id":"7c57002a-eb2f-4412-bd30-22413336c523","keyword":"QEOS","originalKeyword":"QEOS"},{"id":"05d5a9c9-827e-427c-8f6a-daed36af1b92","keyword":"LBE","originalKeyword":"LBE"}],"language":"zh","publisherId":"cldb201124001","title":"金属合金LBE<span style=\"color:red\">全局</span>物态方程的初步研究","volume":"25","year":"2011"},{"abstractinfo":"本文针对于混合整数非线性规划问题的<span style=\"color:red\">全局</span>最优化的难点,提出了一种全新的<span style=\"color:red\">全局</span>最优化方法--函数逼近的割平面<span style=\"color:red\">全局</span>最优化技术:通过对优化变量的函数构建和逼近,根据目标函数代表的性能进行广义的平面切割,反复交替的操作缩小<span style=\"color:red\">全局</span>最优解的区间;同时,基于这种方法分析和提出了优化变量的序列生成方法.","authors":[{"authorName":"胡向柏","id":"62100188-7454-4387-bfb1-7e0e4adce93d","originalAuthorName":"胡向柏"},{"authorName":"崔国民","id":"644f7f1c-3d2e-4efb-86da-62c6656c800d","originalAuthorName":"崔国民"},{"authorName":"涂惟民","id":"31181f19-03a3-4919-8af1-8275779d44f7","originalAuthorName":"涂惟民"},{"authorName":"倪锦","id":"66714eea-69ea-47ab-b96a-195ceeae52be","originalAuthorName":"倪锦"}],"doi":"","fpage":"995","id":"852a347c-4456-49c0-bd67-0188edda95d4","issue":"6","journal":{"abbrevTitle":"GCRWLXB","coverImgSrc":"journal/img/cover/GCRWLXB.jpg","id":"32","issnPpub":"0253-231X","publisherId":"GCRWLXB","title":"工程热物理学报   "},"keywords":[{"id":"8b0742f2-aa0a-4579-8889-79dc503dd4e8","keyword":"函数逼近","originalKeyword":"函数逼近"},{"id":"cf65cabc-a872-4fbe-a528-9f578cdecdc2","keyword":"割平面","originalKeyword":"割平面"},{"id":"50b59778-8865-49b5-99df-3f805892467b","keyword":"<span style=\"color:red\">全局</span>优化","originalKeyword":"全局优化"},{"id":"6d386b44-ed53-46be-80c5-336dee740d9d","keyword":"换热网络","originalKeyword":"换热网络"}],"language":"zh","publisherId":"gcrwlxb201006024","title":"换热网络的函数逼近割平面<span style=\"color:red\">全局</span>最优化方法","volume":"31","year":"2010"},{"abstractinfo":"实现高PPI(单位面积像素个数),需要更细的线宽和更窄的间距,这往往受到光刻设备解像力的限制,本文对基于不改造镜像投影<span style=\"color:red\">曝光</span>设备而提高光刻解像力进行研究.用半导体工艺模拟以及器件模拟软件模拟分析了离焦量为0时,相位移掩膜和传统掩膜下2.5 μm等间隔线的光强分布.根据设备参数模拟分析离焦量为15、30 μm时通过掩膜得到的光刻间距情况,最后,实际比较测量了相同条件下各自<span style=\"color:red\">曝光</span>剂量范围和切面坡度角.实验结果表明:相位移掩膜能使镜像投影<span style=\"color:red\">曝光</span>机分辨力以下间距(线宽)的工艺容限增大1倍,并使相应<span style=\"color:red\">曝光</span>量下间距(线宽)的分布更集中,从而增加细线化的稳定性.使用相位移掩膜能提高镜像投影<span style=\"color:red\">曝光</span>机的解像力.","authors":[{"authorName":"黎午升","id":"33fbaa2a-0a70-4890-89b9-0f74683bc788","originalAuthorName":"黎午升"},{"authorName":"惠官宝","id":"787f44d4-4483-4cfd-bdf4-18ef3415defd","originalAuthorName":"惠官宝"},{"authorName":"崔承镇","id":"e8939795-09ac-40fd-a248-fb825d68aaf5","originalAuthorName":"崔承镇"},{"authorName":"史大为","id":"13b277b9-e683-4c1b-b9a8-d548a70d015f","originalAuthorName":"史大为"},{"authorName":"郭建","id":"a712d141-1abd-490c-ab66-1771e9299091","originalAuthorName":"郭建"},{"authorName":"孙双","id":"5c1d6aab-7838-4ce0-8477-101213c6cebb","originalAuthorName":"孙双"},{"authorName":"薛建设","id":"6891b899-ee40-4e40-bbb0-2399775bc143","originalAuthorName":"薛建设"}],"doi":"10.3788/YJYXS20142904.0544","fpage":"544","id":"ebf11638-9522-4058-8f97-786bcadabee2","issue":"4","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"9d5b4a90-3098-43ce-94d8-ca02e8676110","keyword":"相移掩膜","originalKeyword":"相移掩膜"},{"id":"8248d860-8e46-427b-961d-8cacac8a64ca","keyword":"等间隔线","originalKeyword":"等间隔线"},{"id":"8322ae10-c6ae-4c24-a425-1067be9dc79b","keyword":"模拟","originalKeyword":"模拟"},{"id":"fdd9346c-3093-4fe6-b328-c68d0fb7bb68","keyword":"<span style=\"color:red\">曝光</span>容限","originalKeyword":"曝光容限"},{"id":"d2abecac-40f8-45b1-a66b-085654e7fa2e","keyword":"解像力","originalKeyword":"解像力"}],"language":"zh","publisherId":"yjyxs201404012","title":"在镜像投影<span style=\"color:red\">曝光</span>机上使用相移掩膜提高解像力的初步研究","volume":"29","year":"2014"},{"abstractinfo":"采用Ge浓缩法制备了高质量超薄绝缘体上锗硅(SiGe-on-insulator,SGOI)材料,然后在SGOI上通过超高真空化学气象沉积(UHVCVD)法外延了厚度为15 nm的超薄<span style=\"color:red\">全局</span>应变硅单晶薄膜,使用电子束光刻和反应离子刻蚀在样品上制备了一组纳米级尺寸不等的应变硅线条和应变硅岛,并利用TEM、SEM、Raman等分析手段表征样品.实验结果表明,本文制备的应变硅由于其直接衬底超薄SiGe层的低缺陷密度和应力牵制作用,纳米图形化的应变Si弛豫度远小于文献报道的无Ge应变硅或者具有Ge组分渐变层SiGe衬底的应变Si材料.","authors":[{"authorName":"刘旭焱","id":"9124d9bb-cb1f-4b32-8e3c-d6bca14a2e9a","originalAuthorName":"刘旭焱"},{"authorName":"崔明月","id":"fdc8eef8-19de-42b6-8e48-d8e865ac8a08","originalAuthorName":"崔明月"},{"authorName":"海涛","id":"269291db-23b2-408f-925d-17e9abe45bb6","originalAuthorName":"海涛"},{"authorName":"王爱华","id":"6ff7be2c-1902-4fa9-9361-c52cb2e13346","originalAuthorName":"王爱华"},{"authorName":"蒋华龙","id":"c9096f50-9bae-4971-8dfd-52a0670eb0f7","originalAuthorName":"蒋华龙"}],"doi":"","fpage":"2396","id":"33e39754-e7cc-44b5-b9dc-8491c0e58cd8","issue":"11","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"434a175a-5e9a-4519-a90f-2a6bf1a91830","keyword":"<span style=\"color:red\">全局</span>应变硅","originalKeyword":"全局应变硅"},{"id":"35ce1525-b9f0-4aa1-a8bd-d410797e766e","keyword":"纳米图形","originalKeyword":"纳米图形"},{"id":"cf3eb1f1-810d-4339-bc48-8fc10fe7551a","keyword":"应变弛豫","originalKeyword":"应变弛豫"},{"id":"8bccebea-c5f1-4fa3-8a89-7a0e2e2fd404","keyword":"拉曼光谱","originalKeyword":"拉曼光谱"}],"language":"zh","publisherId":"rgjtxb98201311032","title":"超薄<span style=\"color:red\">全局</span>应变硅薄膜的应变弛豫研究","volume":"42","year":"2013"},{"abstractinfo":"介绍了可适用钛金属0.4 m～1.2 m不同焦距、微粒胶片X射线照相用的KUPTF新型<span style=\"color:red\">曝光</span>曲线的制作原理及方法.试验结果表明,新型<span style=\"color:red\">曝光</span>曲线具有制作简便、经济实用、可兼顾底片象质和拍片效率的优点,是钛制压力容器现场变焦距透照选取准确管电压值的理想工具.","authors":[{"authorName":"魏惠元","id":"697f657d-96be-4467-b711-1779c1ab11bb","originalAuthorName":"魏惠元"}],"doi":"","fpage":"189","id":"fc874bd0-23e1-4b89-8a8c-b698ed91db0c","issue":"3","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"432afef2-f013-46df-a48c-3cfc25838ef7","keyword":"钛","originalKeyword":"钛"},{"id":"198fa4c8-f0da-4bdd-b576-287421a9e28d","keyword":"X射线照相","originalKeyword":"X射线照相"},{"id":"1b39cc15-a4a8-4deb-aae4-3bb1e0feac14","keyword":"KUPTF","originalKeyword":"KUPTF"},{"id":"18ac749d-fac1-4e81-9354-d07157132d57","keyword":"<span style=\"color:red\">曝光</span>曲线","originalKeyword":"曝光曲线"}],"language":"zh","publisherId":"xyjsclygc199903016","title":"适用钛不同焦距X射线照相用的KUP-T-F<span style=\"color:red\">曝光</span>曲线","volume":"28","year":"1999"}],"totalpage":28,"totalrecord":273}