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Final Status of a Metal Sample Surface after Multipulse Laser Irradiation in an Ambient Gas

(C.Boulmer-Leborgne , J.Hermann and B.Dubreuil GREMI , Orleans University. CNRS , France)I. Ursu , M.Dinescu , N , Chitica and I.N.Mihailescu (Institute of Atomic Physics , Bucharest , Romania)(International Center for Theoretical Physics.Trieste , Italy)

材料科学技术(英文)

We have investigated the role of the ambient gas nature and pressure in the structure and appearance of the laser treated zone. and the influence of the total duration and temporal shape of laser pulse with the laser tight being λ= 10.6μm wavelength incident upon a metallic surface at intermediate taser intensities of 107-108 W / cm2. A plasma is accompanied by the action of the laser pulse, It acts as an active moderator among laser beam and target thus determining the final status of the contact surface

关键词:

Synthesis and upconversion luminescence of N-doped graphene quantum dots

Applied Physics Letters

A hydrothermal approach was developed for the synthesis of N-doped graphene quantum dots (N-GQDs) by cutting N-doped graphene. The N-GQDs obtained have a N/C atomic ratio of ca. 5.6% and diameter of 1-7 nm. The photoluminescence (PL) properties of the N-GQDs were investigated. It was found that the N-GQDs possess bright blue PL and excellent upconversion PL properties. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4750065]

关键词: oxygen reduction

Vacuum Ultraviolet/Atomic Oxygen Erosion Resistance of Amorphous Si(0.26)C(0.43)N(0.31) Coating

Journal of Spacecraft and Rockets

An amorphous silicon carbonitride (Si(1-x-y)C(x)N(y), x = 0.43, y = 0.31) coating was deposited on polyimide substrate using the magnetron-sputtering method. Exposure tests of the coated polyimide in atomic oxygen beam and vacuum ultraviolet radiation were performed in a ground-based simulator. Erosion kinetics measurements indicated that the erosion yield of the Si(0.26)C(0.43)N(0.31) coating was about 1.5 x and 1.8 x 10(-26) cm(3) /a tom during exposure in single atomic oxygen beam, simultaneous atomic oxygen beam, and vacuum ultraviolet radiation, respectively. These values were 2 orders of magnitude lower than that of bare polyimide substrate. Scanning electron and atomic force microscopy, X-ray photoelectron spectrometer, and Fourier transformed infrared spectroscopy investigation indicated that during exposures, an oxide-rich layer composed of SiO(2) and minor Si-C-O formed on the surface of the Si(0.26)C(0.43)N(0.31) coating, which was the main reason for the excellent resistance to the attacks of atomic oxygen. Moreover, vacuum ultraviolet radiation could promote the breakage of chemical bonds with low binding energy, such as C-N, C = N, and C-C, and enhance atomic oxygen erosion rate slightly.

关键词: atomic oxygen;films;radiation;polymers;beam;sicn

Atomic scale characterization of layered ternary Cr2AlC ceramic

Journal of Applied Physics

Cr2AlC is a recently developed layered ternary carbide. In this work, the atomic scale microstructure is reported. The layer stacking sequence of Cr and Al atoms has been clearly resolved. The atomic scale characterizations were realized by means of high resolution transmission electron microscopy and Z-contrast scanning transmission electron microscopy. Furthermore, electron energy loss spectroscopic analysis revealed that the Cr-C bonds in Cr2AlC are characterized by a strong sigma bonding. (c) 2006 American Institute of Physics.

关键词: liquid reaction synthesis;transmission electron-microscope;ab-initio;calculations;al-c;ti2alc;behavior;films;ti

Molecular dynamics study of atomic transport properties in rapidly cooling liquid copper

Journal of Chemical Physics

Based on Mei's embedded atom model [Mei , Phys. Rev. B 43, 4653 (1991)] molecular dynamics simulations have been performed to investigate the rapidly cooling processes of Cu. The atomic transport property, namely the self-diffusion coefficient, is computed in the liquid state, and the results near the melting point of Cu are in good agreement with experimental data and other computational values. The atom diffusion movements during the long period of relaxation have been also studied around the solidification temperature T-c. To describe the complex microstructural evolutions during the rapidly cooling processes and the long relaxation processes, the pair correlation function and the pair analysis technique are used. It is demonstrated that the crystallization of amorphous Cu is caused by the atomic diffusion. (C) 2004 American Institute of Physics.

关键词: transition-metals;computer-simulation;supercooled-liquid;model;fcc;potentials;diffusion

N/I/d波超导体c轴隧道结的微分电导

魏健文

低温物理学报 doi:10.3969/j.issn.1000-3258.2008.04.018

以方势垒描述绝缘层,对N/I/d波超导体c轴隧道结的微分电导进行了研究.结果表明:在N/I/d波超导体c轴隧道结的隧道谱中存在V型结构、能隙外的凹陷和小的零偏压电导峰.这一结果能很好的解释相关的实验现象.

关键词: c轴隧道 , 方势垒 , d波超导体 , 隧道谱

Fe-Ti-N合金α相区淬火的S-I交互内耗峰

葛庆麟 , 施天生 , 陈廷国 , 陈源 , 吴自良

金属学报

四种不同Ti浓度的Fe-Ti合金,加氮到N/Ti>1之后,发现有两个内耗峰,并且随氮浓度之增加而同时升高。20℃处的峰是氮的Snoek峰,160℃附近的是s-i峰。s-i峰的峰高和Ti浓度成线性关系,表明起峰的反应只涉及孤立的Ti原子,与Ti-Ti原子对或杂质原子团都无关系。 提出了产生s-i峰的二种缺陷中心——Ti-N对缺陷和N-Ti-N仨缺陷——的模型(图7)。氮占Ti位就构成对缺陷,其中的Ti,N原子亲和力很强,只要合金中尚存有自由Ti原子,就不可能存有自由氮原子,因此N/Ti≤1以下,不会出现Snoek峰或s-i峰。N/Ti>1之后,多余氮原子要在对缺陷的OⅡ位和T_3位之间以约1:10的比例进行分配,直到绝大部分的对缺陷转化为仨缺陷。N/Ti(?)2以后,几乎所有的多余氮都进入了仨缺陷的OⅡ位,此时s-i峰的弛豫强度突然增加10倍。 淬火时冻结在α-Fe基体中的过饱和氮、要扩散到OⅡ位(扩散距离~10(?)),以期达到室温下的再分配,因此引起Snoek峰室温下的迅速衰减。s-i峰的形状,只取决于多余氮的浓度,与淬火温度、冷却速度无关。

关键词:

N6-35-I汽轮发电机组找正实践

宋儒将

稀有金属 doi:10.3969/j.issn.0258-7076.2006.z1.038

通过N3-56-I型机组找中心实例介绍了汽轮发电机组找正的主要目的和测量方法,并提出了综合按联轴器找中心和按扬度配置两个条件综合分析的找正方法,简化了找正过程.

关键词: 找正 , 同轴度 , 端面平行度 , 扬度 , 调整

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