Applied Physics a-Materials Science & Processing
Amorphous aluminate YAlO3 (YAO) thin films on n-type silicon wafers as gate dielectric layers of metal - oxide semiconductor devices are prepared by pulsed laser deposition. As a comparison, amorphous aluminate LaAlO3 (LAO) thin films are also prepared. The structural and electrical characterization shows that the as-prepared YAO films remain amorphous until 900 degrees C and the dielectric constant is similar to 14. The measured leakage current of less than 10(-3) A/cm(2) at a bias of V-G = 1.0 V for similar to 40-nm-thick YAO and LAO films obeys the Fowler Nordheim tunneling mechanism. It is revealed that the electrical property can be significantly affected by the oxygen pressure during deposition and post rapid thermal annealing, which may change the fixed negative charge density at the gate interface.
关键词:
hafnium oxide;si;stability;silicon;transition;dioxide;devices;hfo2
Journal of Materials Research
The morphology of the dark and bright regions observed by transmission electron microscopy for the Zr(64.13)Cu(15.75)Ni(10.12)Al(10) bulk metallic glass strongly depends on the ion beam parameters used for ion milling. This indicates that the ion beam could introduce surface fluctuation to metallic glasses during ion milling.
关键词:
room-temperature
Philosophical Magazine
The error of Equation (15b) in my article [Z.D. Zhang, Phil. Mag. 87 (2007) p.5309] in the application of the Jordan-Wigner transformation does not affect the validity of the putative exact solution, since the solution is not derived directly from that equation. Other objections of Perk's comment [J.H.H. Perk, Phil. Mag. 89 (2009) p.761] are the same as those in Wu et al.'s comments [F.Y. Wu et al., Phil. Mag. 88 (2008) p.3093; p.3103], which do not stand on solid ground and which I have sought to refute in my previous response [Z.D. Zhang, Phil. Mag. 88 (2008) p.3097]. The conjectured solution can be utilized to understand critical phenomena in various systems, whereas the conjectures are open to rigorous proof.
关键词:
3D Ising model;exact solution;conjecture;critical phenomena;ferromagnetism;magnetic phase transition;model;analyticity
中国腐蚀与防护学报
N。1Atmospheric Corrosivlty for Steels………………………………………………… .LIANG Caideng HO[I i。-tat（6）Caustic Stress Corrosion Cr。king of Alloy 800 Part 2.The Effect of Thiosul执e……………………………………… KONG De-sheng YANG Wu ZHAO Guo-zheng HUANG De.ltL。ZHANG Yu。。he CHEN She。g-bac（13）SERS slid E16CttOCh6iniC81 Stlldy Of Illhibit1Oli M6ch＆tllsth Of ThlollY68 Oil ITOll ID H....
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Physics Letters A
In a magnetic system, consistent with Griffiths analyticity requirements one can parameterize the equation of state near criticality by writing H = r(beta delta)h(theta), T = rt(theta) and the magnetization M = r(beta)m(theta), where T is measured from the critical temperature. For the insulating ferromagnet CrBr(3), the experimental data of Ho and Litster [J.T. Ho, J.D. Litster, Phys. Rev. Lett. 22 (1969) 6031 is well fitted by m(theta) as a linear function of theta [P. Schofield, J.D. Litster, J.T Ho, Phys. Rev. Lett. 23 (1969) 1098]. Also Ho and Litster give beta = 0.368, gamma = 1.215 and delta = 4.3. Those critical experiments are very close to the recent 31) king results of Zhang [Z.D. Zhang, Philos. Mag. 87 (2007) 5309], namely beta = 3/8, gamma = 5/4 and delta = 13/3. We therefore predict that m(theta) will be proportional to theta as a fingerprint of the 3D Ising Hamiltonian. (C) 2009 Elsevier B.V. All rights reserved.
关键词:
Critical-point effects;Critical exponents;Ising model;Criticality;Ferromagnet;Magnetic equation of state;critical exponents
