{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"利用MOCVD法,在7．62 cm蓝宝石衬底上生长了InAlN薄膜及InAlN/GaN 异质结材料.利用XRD、AFM、Hall 等测试方法对材料的组分、表面形貌、电学性质等进行了分析,InAlN 薄膜中 In 含量随生长温度的升高明显降低,材料表面为三维岛状结构；与AlGaN/GaN异质结材料相比,InAlN/GaN 异质结的高温电子输运特性更好,773 K 下 InAlN/GaN 异质结的迁移率为130 cm2/(v?s),明显高于 AlGaN/GaN异质结的67 cm2/(v?s).","authors":[{"authorName":"董逊","id":"e8b2ff32-fef9-4ce2-a3f8-a4c339dffe8f","originalAuthorName":"董逊"},{"authorName":"倪金玉","id":"9ee59e39-15b5-4b5c-bb3e-5b0dd9b3cc00","originalAuthorName":"倪金玉"},{"authorName":"李亮","id":"3e641065-1359-4657-a2b7-f59abd6415fe","originalAuthorName":"李亮"},{"authorName":"彭大青","id":"49aa866a-0928-4dfd-9656-456fd66ae602","originalAuthorName":"彭大青"},{"authorName":"<span style=\"color:red\">张</span><span style=\"color:red\">东</span><span style=\"color:red\">国</span>","id":"8ddc26cb-d953-4756-83b5-3fd15d78bc88","originalAuthorName":"张东国"},{"authorName":"李忠辉","id":"298ca072-ece5-478f-ba37-0f3427f5f250","originalAuthorName":"李忠辉"}],"doi":"10.3969/j.issn.1001-9731.2014.增刊(Ⅰ).024","fpage":"104","id":"107a1e4b-d26b-4f3d-bb0f-8c0101090f56","issue":"z1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"0a7bbde6-b477-458a-90b4-635cceac3afe","keyword":"MOCVD","originalKeyword":"MOCVD"},{"id":"f0c02330-d3d6-4a8c-bd5c-ecef49e0bc25","keyword":"InAlN","originalKeyword":"InAlN"},{"id":"22d89def-f1b0-490a-bec1-850846fccf51","keyword":"迁移率","originalKeyword":"迁移率"}],"language":"zh","publisherId":"gncl2014z1024","title":"MOCVD法生长InAlN材料及其微结构特性研究","volume":"","year":"2014"},{"abstractinfo":"利用低压MOCVD技术在蓝宝石衬底上生长了AlGaN/GaN二维电子气(2DEG)材料,在GaN生长中插入一层低温GaN,并研究了低温GaN插入层对二维电子气输运特性的影响.使用原子力显微镜(AFM)和非接触霍尔测试仪测量了材料的表面形貌和电学特性,发现低温GaN插入层可以改善材料表面平整度并使AlGaN/GaN 2DEG的电子迁移率有明显提高,GaN插入层温度为860℃的样品在室温下2DEG的电子迁移率达到2110 cm2/V·s.","authors":[{"authorName":"<span style=\"color:red\">张</span><span style=\"color:red\">东</span><span style=\"color:red\">国</span>","id":"92e2a32d-72e2-4ee2-8af5-722612337d08","originalAuthorName":"张东国"},{"authorName":"李忠辉","id":"279ac204-6991-4cbf-a2ae-bd1b96268746","originalAuthorName":"李忠辉"},{"authorName":"彭大青","id":"698c14e9-3665-4394-9e11-2fb46e546f99","originalAuthorName":"彭大青"},{"authorName":"董逊","id":"fd7b6398-fd63-40af-9384-48a93cf948a5","originalAuthorName":"董逊"},{"authorName":"李亮","id":"5d386faa-97a7-45f1-b4c1-5cc39c3a8a31","originalAuthorName":"李亮"},{"authorName":"倪金玉","id":"2e73b4a0-4be0-4bb2-9787-ce8b2972abb1","originalAuthorName":"倪金玉"}],"doi":"","fpage":"1406","id":"29c321e6-d9db-4975-85db-27d6c17502ce","issue":"7","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"34d25be2-7763-46cb-8f9d-35c1362697a1","keyword":"MOCVD","originalKeyword":"MOCVD"},{"id":"8c3fa25b-e2dd-4d6d-ad93-1b81010922c8","keyword":"缓冲层","originalKeyword":"缓冲层"},{"id":"c4192509-73f5-4822-867e-f158508de1be","keyword":"AlGaN/GaN","originalKeyword":"AlGaN/GaN"},{"id":"145527e2-9da1-446f-8baa-6bd80425d91a","keyword":"二维电子气","originalKeyword":"二维电子气"}],"language":"zh","publisherId":"rgjtxb98201307031","title":"低温GaN插入层对AlGaN/GaN二维电子气特性的改善","volume":"42","year":"2013"},{"abstractinfo":"采用金属有机化学气相沉积(MOCVD)技术,在GaN自支撑衬底上同质外延生长了GaN薄膜,得到高质量的GaN外延薄膜.X射线衍射(XRD)结果显示其(002)面摇摆曲线半高宽小于100弧秒,原子力显微镜(AFM)照片上能看到连续的二维台阶流形貌,其表面粗糙度小于0.5nm,其位错密度低于106 cm3.","authors":[{"authorName":"李亮","id":"8bb3dfbe-8d09-4c09-91e8-a9020bea2078","originalAuthorName":"李亮"},{"authorName":"李忠辉","id":"2d237b37-5683-44c5-a7f2-ad3bebc8aef7","originalAuthorName":"李忠辉"},{"authorName":"罗伟科","id":"87bc12a5-afc2-4aa5-bd6f-373b367775ac","originalAuthorName":"罗伟科"},{"authorName":"董逊","id":"683fd05e-4d8e-409a-924f-6f46531b5d37","originalAuthorName":"董逊"},{"authorName":"彭大青","id":"5bf93b21-e72d-408c-b85b-a93b2e21e9b9","originalAuthorName":"彭大青"},{"authorName":"<span style=\"color:red\">张</span><span style=\"color:red\">东</span><span style=\"color:red\">国</span>","id":"11834a88-c102-43c2-bcab-5f6d65617fe7","originalAuthorName":"张东国"}],"doi":"","fpage":"915","id":"5096e347-4f0e-49d9-96ba-3f7712c0b94b","issue":"5","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"74526b0e-d082-4fd7-8e24-138de9606afa","keyword":"GaN薄膜","originalKeyword":"GaN薄膜"},{"id":"c7e73612-dec2-4d8b-9ba5-10891849d48d","keyword":"MOCVD","originalKeyword":"MOCVD"},{"id":"3f4f1cd5-839e-4f0b-a806-3eec7a3e2fca","keyword":"同质外延","originalKeyword":"同质外延"}],"language":"zh","publisherId":"rgjtxb98201305028","title":"高质量GaN薄膜的MOCVD同质外延生长","volume":"42","year":"2013"},{"abstractinfo":"在对轧制时钢管的温降原因进行分析的基础上,给出一种定<span style=\"color:red\">张</span>减温降计算模型,该模型考虑了辐射、接触传导、内部传导对温度的影响.通过对轧制实验测定得到钢管的温降数据与此模型实例计算的结果进行对比分析,表明该模型比较准确,能够满足生产实际的要求,可用于自动控制系统中定<span style=\"color:red\">张</span>减温降的计算,从而为控制系统比较准确地对轧机进行设定及调整提供依据.","authors":[{"authorName":"付<span style=\"color:red\">国</span>忠","id":"2df6a851-8f47-4b56-8f72-ddb7bbbcfe8c","originalAuthorName":"付国忠"},{"authorName":"刘建平","id":"7bbce9ac-9a32-45eb-96fd-189eee9a7fcf","originalAuthorName":"刘建平"},{"authorName":"赵晓峰","id":"447ac541-0f77-4dc8-b74d-90d05019a5dc","originalAuthorName":"赵晓峰"},{"authorName":"刘建明","id":"dab886da-88c3-485b-acd8-36bdef7ca181","originalAuthorName":"刘建明"},{"authorName":"吕庆功","id":"ca75c975-aa2d-40d9-a1bc-e6c2a6290dd3","originalAuthorName":"吕庆功"},{"authorName":"彭龙洲","id":"191fb78f-9fa7-4ff8-bd3d-f5d577b2254b","originalAuthorName":"彭龙洲"}],"doi":"","fpage":"51","id":"f9f1b624-57cd-4daa-8c3b-87273c5da7af","issue":"12","journal":{"abbrevTitle":"GT","coverImgSrc":"journal/img/cover/GT.jpg","id":"27","issnPpub":"0449-749X","publisherId":"GT","title":"钢铁"},"keywords":[{"id":"86dbadc0-1405-4493-8908-e33b69ac127a","keyword":"定<span style=\"color:red\">张</span>减","originalKeyword":"定张减"},{"id":"9e7152eb-09a1-44ea-a2de-6bbe76d243e5","keyword":"温降","originalKeyword":"温降"},{"id":"5b41b920-ede8-4551-8e68-3e12ea48cca0","keyword":"模型","originalKeyword":"模型"}],"language":"zh","publisherId":"gt200412013","title":"定<span style=\"color:red\">张</span>减温降计算模型","volume":"39","year":"2004"},{"abstractinfo":"探讨渤海湾盆地青<span style=\"color:red\">东</span>凹陷反转构造特征、成因及其对油气成藏的控制作用。通过对区域构造应力场调查、三维地震构造解释、构造组合样式分析、油气藏特征研究，表明反转构造是基底断裂古近纪伸展断陷期<span style=\"color:red\">张</span>扭性活动和古近纪末反转期压扭性活动叠加的结果，并控制形成了多种类型圈闭。基底断裂沟通了烃源岩，其古近纪末反转与烃源岩大量排烃期一致，成为油气运移的重要通道。","authors":[{"authorName":"石砥石","id":"94df186c-fded-480f-a0fe-ee27a169fb18","originalAuthorName":"石砥石"},{"authorName":"<span style=\"color:red\">张</span>聪","id":"04c2a3e7-228c-4bf0-bd88-5b2d8fb1ee27","originalAuthorName":"张聪"},{"authorName":"杨贵丽","id":"fddb6459-1183-4f34-a5ba-ab939eafdf3e","originalAuthorName":"杨贵丽"},{"authorName":"<span style=\"color:red\">张</span>盛","id":"f21f30d6-8708-4268-9d1e-c2f2adc99ae8","originalAuthorName":"张盛"},{"authorName":"刘晓林","id":"f2b59dc4-4a64-41b1-beb9-a4f0fa5a9aa5","originalAuthorName":"刘晓林"},{"authorName":"许晓凤","id":"d21e4c92-e85f-4016-93a9-27ac0146ee2d","originalAuthorName":"许晓凤"}],"doi":"10.3969/j.issn.1671-9727.2015.06.05","fpage":"673","id":"a2bf2941-2a00-4850-b918-f3c0506701cc","issue":"10","journal":{"abbrevTitle":"ZGCLJZ","coverImgSrc":"journal/img/cover/中国材料进展.jpg","id":"80","issnPpub":"1674-3962","publisherId":"ZGCLJZ","title":"中国材料进展"},"keywords":[{"id":"3a9e6918-08a9-4683-ada4-4a08f38db13b","keyword":"青<span style=\"color:red\">东</span>凹陷","originalKeyword":"青东凹陷"},{"id":"7cef1b17-f9fd-423d-9c10-68a9190145b4","keyword":"反转构造","originalKeyword":"反转构造"},{"id":"9ca57441-f36b-415a-a9ac-cfbf0503c039","keyword":"基底断裂","originalKeyword":"基底断裂"},{"id":"79e68e8e-e425-478d-9adf-a3b8837855cd","keyword":"控藏作用","originalKeyword":"控藏作用"}],"language":"zh","publisherId":"zgcljz201510005","title":"济阳拗陷青<span style=\"color:red\">东</span>凹陷反转构造及其控藏作用","volume":"","year":"2015"},{"abstractinfo":"西气<span style=\"color:red\">东</span>输工程作为一项世纪工程,能改变我<span style=\"color:red\">国</span>东部地区的能源结构,是西部大开发战略的组成部分.按工程进度,该工程2001年内开工,2002年送气到上海,2004年全线完工.对输气线路情况及其防腐蚀措施进行了探讨.","authors":[{"authorName":"董旭","id":"c5e7938f-88c5-4838-aed8-0187a9d1fa61","originalAuthorName":"董旭"},{"authorName":"胡士信","id":"0040e421-624a-4441-923c-e607226c485e","originalAuthorName":"胡士信"}],"doi":"10.3969/j.issn.1001-1560.2001.12.001","fpage":"1","id":"d1aed3fe-a335-4d0e-a26b-f4d34fa1d6dd","issue":"12","journal":{"abbrevTitle":"CLBH","coverImgSrc":"journal/img/cover/CLBH.jpg","id":"7","issnPpub":"1001-1560","publisherId":"CLBH","title":"材料保护"},"keywords":[{"id":"084b5a4f-e562-4f80-85a8-5a6cae01e51d","keyword":"西气<span style=\"color:red\">东</span>输","originalKeyword":"西气东输"},{"id":"ae5a20fc-cdbe-47d6-a663-4c13ab0fc7a8","keyword":"天然气管道","originalKeyword":"天然气管道"},{"id":"ba9c78ec-bfbe-4b0b-81b4-c861dffa8c27","keyword":"防腐蚀","originalKeyword":"防腐蚀"}],"language":"zh","publisherId":"clbh200112001","title":"西气<span style=\"color:red\">东</span>输工程及其管道防腐蚀概况","volume":"34","year":"2001"},{"abstractinfo":"沂沭断裂在山东地质演化史中发挥了重要作用,它由四条主干断裂组成,每条断裂具有自己的形成演化过程和变形特征.表现在自西向东形成活动时间由老(前古生代)变新(中-新生代);力学性质由扭<span style=\"color:red\">张</span>-压扭-走滑;伴生(NNE向)与派生(NW向)断裂由密到疏相间展布,显示倒N字型构造型地工,控制着鲁<span style=\"color:red\">东</span>金矿床类型及特征.基底滑脱层为地壳高导层(深17km),其中的热液体沿低级序断裂上升,对古老的重熔花岗质岩石进行广泛的碱交代作用,在不同的构造部位及层次上被改造为具不同结构与构造的花岗岩.碱交代作用的排硅、提取矿质的过程,促使热液具有了成矿能力,并随断裂构造的时空特征而变化.","authors":[{"authorName":"刘永祥","id":"831dd257-8794-47cb-9d1c-0064b1ecf603","originalAuthorName":"刘永祥"},{"authorName":"张宝福","id":"6d8543fb-2497-424e-9461-7301c3f13e9c","originalAuthorName":"张宝福"}],"doi":"10.3969/j.issn.1001-1277.2001.09.002","fpage":"5","id":"597e9294-cc80-489d-b580-772eaa7d610f","issue":"9","journal":{"abbrevTitle":"HJ","coverImgSrc":"journal/img/cover/HJ.jpg","id":"44","issnPpub":"1001-1277","publisherId":"HJ","title":"黄金"},"keywords":[{"id":"a4d7f429-d15f-48c4-983d-8218f71b0e2a","keyword":"沂沭断裂","originalKeyword":"沂沭断裂"},{"id":"3dc89e30-cc62-4e51-a69e-178d4d731449","keyword":"演化规律","originalKeyword":"演化规律"},{"id":"805d3303-9b8a-4155-9fef-4fadab11cd9c","keyword":"鲁<span style=\"color:red\">东</span>金矿床","originalKeyword":"鲁东金矿床"},{"id":"cd88bf88-2e7c-4ae0-88b7-a50d7532c430","keyword":"成生关系","originalKeyword":"成生关系"}],"language":"zh","publisherId":"huangj200109002","title":"沂沭断裂与鲁<span style=\"color:red\">东</span>金矿床的成生关系","volume":"22","year":"2001"},{"abstractinfo":"通过对高压输电用耐<span style=\"color:red\">张</span>线夹及夹持导线的宏观形貌、化学成分、腐蚀产物进行分析,探讨了该线夹腐蚀失效的原因.结果表明:该线夹在压接时即存在铝线断股现象,服役过程中使酸性雨水更易进入到压接管内部,对线夹与钢芯铝绞线结合面进行腐蚀生成腐蚀产物,导致耐<span style=\"color:red\">张</span>线夹电阻增大;随着腐蚀的进行,线夹电阻不断增大,其温度也随之升高;当温度超过临界温度时,热平衡状态被打破,最终线夹过热,导致高温烧损失效;应加强线夹压接管位置的红外测温监控,及时更换温度明显异常的压接管.","authors":[{"authorName":"王若民","id":"67613948-e11f-48e5-825a-945647e34637","originalAuthorName":"王若民"},{"authorName":"詹马骥","id":"c5bfcec7-5a00-4e3d-b8c3-cc8ae36b1c5e","originalAuthorName":"詹马骥"},{"authorName":"季坤","id":"fad04bbc-1535-4f0d-b2d0-e0a6c3cd18b9","originalAuthorName":"季坤"},{"authorName":"严波","id":"5762aad4-1316-4f1b-a398-6bef540edc39","originalAuthorName":"严波"},{"authorName":"王夫成","id":"293d7a45-367c-4e72-b1e8-54671748e326","originalAuthorName":"王夫成"},{"authorName":"杜晓<span 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style=\"color:red\">东</span>输工程中水土腐蚀勘测的方法,给出了郑州至郸城高桥段水土腐蚀性勘测结果.","authors":[{"authorName":"阳光","id":"98eff96a-396f-44f7-8d60-a5b3a6f7cbc0","originalAuthorName":"阳光"},{"authorName":"罗心","id":"72bc340f-c870-42a0-8132-5ccb0128ac80","originalAuthorName":"罗心"},{"authorName":"高立群","id":"c4dcadc0-888b-4c91-aa15-736f24084f59","originalAuthorName":"高立群"}],"doi":"10.3969/j.issn.1005-748X.2003.01.008","fpage":"29","id":"1ec632dd-cb44-4bc0-9cbc-966f105209e7","issue":"1","journal":{"abbrevTitle":"FSYFH","coverImgSrc":"journal/img/cover/FSYFH.jpg","id":"25","issnPpub":"1005-748X","publisherId":"FSYFH","title":"腐蚀与防护"},"keywords":[{"id":"c60892dc-9c4f-495c-8b15-af91b337bc52","keyword":"西气<span style=\"color:red\">东</span>输","originalKeyword":"西气东输"},{"id":"8fab1792-4cb9-4c17-a0e8-24806345f8aa","keyword":"腐蚀调查","originalKeyword":"腐蚀调查"},{"id":"45a2bd96-ff07-4711-b717-257888340e1f","keyword":"土壤","originalKeyword":"土壤"}],"language":"zh","publisherId":"fsyfh200301008","title":"西气<span 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