{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"构造了由磁单负材料A、普通材料B( SiO2)和C(TiO2)组成的(AB)NC(BA)N型一维光子晶体,数值计算结果表明在3100～3700 nm的波长范围内出现了6个<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span><span style=\"color:red\">模</span>.这些<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span><span style=\"color:red\">模</span>有不同于传统缺陷<span style=\"color:red\">模</span>的特征:入射角θ、C介质层的位置、光子晶体的周期数N和A、B两层介质的几何厚度都不影响各<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span><span style=\"color:red\">模</span>的位置.在θ＞46θ时,长波段的<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span><span style=\"color:red\">模</span>消失.磁单负材料的介电常数变化,不影响<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span><span style=\"color:red\">模</span>的个数和透射率.A、B两层介质的几何厚度变化量小于5％时,不影响各<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span><span style=\"color:red\">模</span>的透射率,而C介质层的几何厚度对<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span><span style=\"color:red\">模</span>的位置有影响.C介质层移动的单元数相同,<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span><span style=\"color:red\">模</span>的变化也相同.","authors":[{"authorName":"李文胜","id":"d51aca22-4bbf-4843-84b9-f2da57ceb3f1","originalAuthorName":"李文胜"},{"authorName":"黄海铭","id":"5d6120a6-2a4e-46d7-b9c7-a88ed23312dc","originalAuthorName":"黄海铭"},{"authorName":"张琴","id":"3bf370ba-2019-4812-99c3-7eaf12e8639e","originalAuthorName":"张琴"},{"authorName":"付艳华","id":"eb340328-fb21-4476-b778-9632f81e5ed6","originalAuthorName":"付艳华"},{"authorName":"是度芳","id":"e9f976f8-2b37-41e6-9499-bd1fdb5456ed","originalAuthorName":"是度芳"}],"doi":"","fpage":"1612","id":"110ef6eb-aafe-4488-bb2c-3580a72603c9","issue":"6","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"65abc37b-17de-4721-bd8b-97095c870742","keyword":"光子晶体","originalKeyword":"光子晶体"},{"id":"415c5dcc-ceac-4ce8-824f-43032a98aa25","keyword":"磁单负材料","originalKeyword":"磁单负材料"},{"id":"6e6544b3-80a8-4132-be02-a481524eca5a","keyword":"<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span><span style=\"color:red\">模</span>","originalKeyword":"隧穿模"},{"id":"25645178-6ce3-4965-86ec-49b9a8b1c129","keyword":"透射率","originalKeyword":"透射率"}],"language":"zh","publisherId":"rgjtxb98201106048","title":"含磁单负材料一维光子晶体的<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>模特性","volume":"40","year":"2011"},{"abstractinfo":"以共振<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>结构为压阻器件可以得到较高的灵敏度,但是当实验选择不同的工作偏压时,这种压阻效应表现得极其不同.由于高灵敏度是依靠较高的I-V曲线斜率获得的,因此最初人们希望选择具有较高峰谷比结构作为器件.但是有些区域的斜率过大,以至于压阻效应失去线性及稳定性而变得没有实用价值.另外,在某些工作区域由于共振<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>结构本身具有的双稳态特性,而使其完全失去压阻特性.本文对这些问题进行了系统分析,并对一个具体的结构,分析其工作区域及特性,给出最高灵敏度可达700左右.","authors":[{"authorName":"魏天杰","id":"2d256cce-1891-4fb6-aaa3-59791f6862c6","originalAuthorName":"魏天杰"},{"authorName":"薛晨阳","id":"b6261a3f-10fe-4ba8-8b18-8222d4966769","originalAuthorName":"薛晨阳"},{"authorName":"李艳","id":"6190b33e-0091-4cb8-ba6d-5fce2c921f3d","originalAuthorName":"李艳"},{"authorName":"张文栋","id":"088638d6-4582-406c-a3b8-73e8f228481d","originalAuthorName":"张文栋"}],"doi":"10.3969/j.issn.1007-4252.2008.01.040","fpage":"179","id":"4673879f-e39b-4d08-8c1a-8ce17baeb6ce","issue":"1","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"6d53a6c3-4b43-4e65-9ae4-15effde89d76","keyword":"共振<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>结构","originalKeyword":"共振隧穿结构"},{"id":"4106f8ff-c852-4ccf-b7c9-4ed0ec27486a","keyword":"压阻系数","originalKeyword":"压阻系数"},{"id":"bc213703-8f57-42a9-8e17-de71cc7cd558","keyword":"I-V曲线","originalKeyword":"I-V曲线"},{"id":"31fd6e99-bc41-4968-9b8f-3578a0448d09","keyword":"灵敏度","originalKeyword":"灵敏度"}],"language":"zh","publisherId":"gnclyqjxb200801040","title":"基于共振<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>结构的压阻系数","volume":"14","year":"2008"},{"abstractinfo":"共振<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>是电子的<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>概率在某一个能量值附近以尖锐的峰值形式出现的<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>,是目前为止最有希望应用到实际电路和系统的量子器件之一,其特点是器件的响应速度非常快.用传递矩阵的方法分别计算了在外加偏压下,对称双势垒、三势垒应变量子阱结构的透射系数与入射电子能量和<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>电流与偏置电压的关系,模拟了应变多量子阱结构的<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>系数和Ⅰ-Ⅴ特性曲线.计算得到<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>电流峰值位置与实验测试值符合得很好,对于设计共振<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>二极管并为进一步实验提供理论指导具有重要的意义.","authors":[{"authorName":"安盼龙","id":"1f72fd78-cd2c-4719-ad74-047406c50ba1","originalAuthorName":"安盼龙"},{"authorName":"赵瑞娟","id":"02f1462d-aa19-4ba2-b33f-9c84311bad12","originalAuthorName":"赵瑞娟"}],"doi":"10.3969/j.issn.1007-5461.2011.05.019","fpage":"629","id":"54540611-c88d-4886-83fe-582187d5f31a","issue":"5","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"e8a8d942-4ba9-4410-a926-6c13a15d227a","keyword":"光电子学","originalKeyword":"光电子学"},{"id":"abcd6def-487a-4747-98ef-c911665a4798","keyword":"量子阱","originalKeyword":"量子阱"},{"id":"4aff6233-a73f-49b7-a2a6-2e3c85547108","keyword":"共振<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>","originalKeyword":"共振隧穿"},{"id":"db34a14e-f958-4fd6-8587-ba9e53a8b106","keyword":"透射系数","originalKeyword":"透射系数"},{"id":"5071329f-0a89-45a5-b565-663df011ff43","keyword":"<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>电流","originalKeyword":"隧穿电流"}],"language":"zh","publisherId":"lzdzxb201105019","title":"小偏压下阱中阱结构的量子<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>特性及其实现","volume":"28","year":"2011"},{"abstractinfo":"结合Landau-Devonshire自由能理论和晶格模型,研究了PbZr1xTixO3 (PZT)/SrTiO3 (STO)复合薄膜中PZT和STO厚度对铁电隧道结极化强度、电导和<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>电阻等的影响.模拟结果表明,随着层数增加,极化强度增大；平均极化强度随着PZT厚度增加而增强,随着STO厚度增加而减弱；随着PZT和STO厚度增加,电导减小,<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>电阻率增加；当厚度变化相同时,PZT引起电导的变化大,<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>电阻率变化小.考虑薄膜面积的影响,当薄膜面积从无限大变成有限大时,极化强度、电导和<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>电阻均减小.","authors":[{"authorName":"王英龙","id":"cefa0689-e9e2-4b67-8827-08623b6003e5","originalAuthorName":"王英龙"},{"authorName":"刘林","id":"23802088-208a-4c56-ad9a-5c9d20b7d1b2","originalAuthorName":"刘林"},{"authorName":"张鹏程","id":"384faaf8-4179-4d50-a0e6-c96ad59f3d2c","originalAuthorName":"张鹏程"},{"authorName":"梁伟华","id":"80412243-54f0-4236-922b-c0d6cfa8c40a","originalAuthorName":"梁伟华"},{"authorName":"丁学成","id":"633ab0a9-9b6e-4356-a190-2abc3d092e1f","originalAuthorName":"丁学成"},{"authorName":"褚立志","id":"7719695b-0831-4582-8fff-b5a634183dd7","originalAuthorName":"褚立志"},{"authorName":"邓泽超","id":"762b8e26-c3c0-4dda-8cc1-77991d6a2f23","originalAuthorName":"邓泽超"}],"doi":"","fpage":"363","id":"19fd3557-dea4-4e9d-a1a4-2fbd7d727112","issue":"3","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"61454ad3-823f-4f74-8d74-a937eb407a4b","keyword":"铁电电容器","originalKeyword":"铁电电容器"},{"id":"cae9baef-f42f-43bf-b2fc-51f0b95349df","keyword":"<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>效应","originalKeyword":"隧穿效应"},{"id":"72f6e7bd-d849-46b6-b902-07d45495fde6","keyword":"Landau模型","originalKeyword":"Landau模型"},{"id":"3f9c8a83-b1b5-4ca7-aeed-ae50e78795c0","keyword":"PZT","originalKeyword":"PZT"}],"language":"zh","publisherId":"gncl201303015","title":"薄膜厚度对PZT/STO铁电电容器<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>电阻的影响","volume":"44","year":"2013"},{"abstractinfo":"为了解释一维大周期数声子晶体全反射<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>效应的产生机理,利用波的干涉理论推导出一维大周期数声子晶体的全反射<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>峰的透射率公式和频率公式,成功解释了一维大周期数声子晶体的全反射<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>现象的产生机理.利用干涉理论和共振理论对一维大周期数声子晶体全反射<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>现象的特征进行了比较研究,两者的结论是一致的.","authors":[{"authorName":"刘启能","id":"abaaeaa7-3a44-4278-aa6f-3c589f6076af","originalAuthorName":"刘启能"}],"doi":"","fpage":"1693","id":"2bbdb875-5f7e-4b8d-a3e5-2aecf28a8b02","issue":"8","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"519c4777-fbd2-4275-aa77-01caa58ff991","keyword":"声子晶体","originalKeyword":"声子晶体"},{"id":"5996d2c6-4390-4c65-b7a9-97f19314a5d1","keyword":"大周期数","originalKeyword":"大周期数"},{"id":"f4608b7e-4a49-4aac-b723-d1fd56c46208","keyword":"全反射<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>","originalKeyword":"全反射隧穿"},{"id":"d7305f1b-0491-469b-8ead-a023539101ca","keyword":"干涉","originalKeyword":"干涉"}],"language":"zh","publisherId":"rgjtxb98201308040","title":"一维大周期数声子晶体全反射<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>的干涉理论","volume":"42","year":"2013"},{"abstractinfo":"本文采用转移矩阵法,系统地研究了磁势垒尺度d对磁量子结构中电子自旋输运的影响.结果表明:在理想δ函数型磁势垒结构中,若保持<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>能量不变,随d的变化,透射系数呈现出明显的正弦或余弦型的周期性振荡,且振荡周期与是否考虑自旋无关.而对于真实δ函数型磁势垒结构,随d的变化,透射系数的周期性振荡的规律明显消失.另外,当电子自旋分别<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>理想δ函数型磁势垒结构与真实δ函数型磁势垒结构时,<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>电导随d的变化也存在较大差异.研究结果表明:尺寸的变化对器件的性能产生了较大的影响;且采用理想δ函数型磁势垒结构得出的结论可能了偏离实际应用中的真实δ函数型磁势垒结构的物理规律.","authors":[{"authorName":"袁瑞玚","id":"ed838972-79ac-4ee1-b38d-87f5f19d3848","originalAuthorName":"袁瑞玚"},{"authorName":"王如志","id":"b9ca79ed-cfe4-4b66-83dd-bc1dbcdb635b","originalAuthorName":"王如志"},{"authorName":"段志强","id":"c5973225-29ce-4396-ae9f-2c585094db6e","originalAuthorName":"段志强"},{"authorName":"王波","id":"ccdc3c43-b203-439a-9f21-d20bed455aeb","originalAuthorName":"王波"},{"authorName":"严辉","id":"9dd906bf-900b-492b-b1d6-63fb82db334e","originalAuthorName":"严辉"}],"doi":"10.3969/j.issn.1000-3258.2007.02.014","fpage":"136","id":"8a2045d9-27da-40a3-885c-29fe99755485","issue":"2","journal":{"abbrevTitle":"DWWLXB","coverImgSrc":"journal/img/cover/DWWLXB.jpg","id":"19","issnPpub":"1000-3258","publisherId":"DWWLXB","title":"低温物理学报   "},"keywords":[{"id":"20cfd342-fcc4-4961-95ca-2cb256c30c81","keyword":"尺度效应","originalKeyword":"尺度效应"},{"id":"79db70e9-2712-4467-abf1-411b5fd56825","keyword":"自旋输运","originalKeyword":"自旋输运"},{"id":"c84cb14a-22ad-4eb2-8a35-a755cbd369d9","keyword":"<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>电导","originalKeyword":"隧穿电导"},{"id":"a79a04c1-946a-47b2-96a1-fa585349e472","keyword":"磁量子结构","originalKeyword":"磁量子结构"}],"language":"zh","publisherId":"dwwlxb200702014","title":"电子自旋<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>反平行磁结构的尺度效应","volume":"29","year":"2007"},{"abstractinfo":"利用边界条件推导出SH波在多层介质系统中的转移矩阵,得出了SH波在一维固-固结构声子晶体中的色散函数.利用色散函数研究了SH波在一维固-固结构声子晶体中的全反射<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>效应,得出SH波的全反射<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>导带的特征:全反射<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>导带的频率中心随入射角的增加而向高频方向移动,全反射<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>导带的频率宽度随入射角的增加而减小；全反射<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>导带的频率中心和频率宽度都随周期厚度的增加而减小.","authors":[{"authorName":"刘启能","id":"586093ad-166e-4e78-af1b-a441b5a80098","originalAuthorName":"刘启能"},{"authorName":"刘沁","id":"1fe784a0-a4c9-4ee5-a393-1add64649156","originalAuthorName":"刘沁"}],"doi":"","fpage":"142","id":"3f341014-c1aa-4c19-a432-e3800617eb0a","issue":"2","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"78e7b794-c1b8-40aa-9a9b-162c39356ad2","keyword":"声子晶体","originalKeyword":"声子晶体"},{"id":"67ed1548-35aa-436b-9b4f-86b54e3e7be7","keyword":"SH波","originalKeyword":"SH波"},{"id":"76138038-7363-43b5-99c6-f7a73daf6af4","keyword":"色散","originalKeyword":"色散"},{"id":"c3dcbd22-eb60-4ad6-9254-07be7a1599b2","keyword":"全反射","originalKeyword":"全反射"}],"language":"zh","publisherId":"cldb201302038","title":"固-固结构声子晶体中SH波的色散关系及其全反射<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>","volume":"27","year":"2013"},{"abstractinfo":"本文论述了薄膜非晶/微晶叠层电池中NP<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>结对电池性能的影响.在薄膜叠层电池中非晶顶电池的N层采用微晶硅,减小了电池的内部串联电阻影响.通过调整非晶硅顶电池N层和微晶硅底电池P层的厚度,降低NP<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>结的影响,获得薄膜叠层电池效率11.73%(Voc=1.34V,Jsc=14.53mA/cm2,FF=60.27%),电池面积为0.253cm2.","authors":[{"authorName":"朱锋","id":"b7e5ec1b-2918-460f-8bf6-36d4ce49ad56","originalAuthorName":"朱锋"},{"authorName":"赵颖","id":"35530523-8a8f-4580-ba08-f3ac836a9fb1","originalAuthorName":"赵颖"},{"authorName":"魏长春","id":"9768d0f8-6db9-4402-9e80-13e81f43f3d0","originalAuthorName":"魏长春"},{"authorName":"任慧智","id":"e23b2f72-f67c-449a-9b46-8392e64f5409","originalAuthorName":"任慧智"},{"authorName":"薛俊明","id":"d61972ed-c0e9-4e3d-bf76-e5e95bfb8391","originalAuthorName":"薛俊明"},{"authorName":"张晓丹","id":"be832a3f-779a-448a-92a6-de4081bf6b22","originalAuthorName":"张晓丹"},{"authorName":"高艳涛","id":"9d1c0cb7-cf96-4d6c-afc6-556c241e5b22","originalAuthorName":"高艳涛"},{"authorName":"张德坤","id":"89a86758-d620-4fb0-8d49-de1f05eb586c","originalAuthorName":"张德坤"},{"authorName":"孙建","id":"bb371392-dc24-43da-ad58-10a5b6a1e9e1","originalAuthorName":"孙建"},{"authorName":"耿新华","id":"34450d5c-670f-4c92-98e2-6875cc00eaea","originalAuthorName":"耿新华"}],"doi":"10.3969/j.issn.1000-985X.2006.01.018","fpage":"81","id":"0e9c0545-2cd4-4f2e-aac7-7e09acc49c57","issue":"1","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"449f3c48-4e2d-411c-a889-6833ae6735d0","keyword":"非晶/微晶叠层电池","originalKeyword":"非晶/微晶叠层电池"},{"id":"f89e5714-d544-4c6d-a52f-a810215f2c62","keyword":"微晶硅","originalKeyword":"微晶硅"},{"id":"60be5cf3-1089-425f-b700-460e305cdfd7","keyword":"N/P<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>结","originalKeyword":"N/P隧穿结"}],"language":"zh","publisherId":"rgjtxb98200601018","title":"薄膜非晶/微晶叠层电池中NP<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>结的影响","volume":"35","year":"2006"},{"abstractinfo":"水平式<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>磁强计梁的结构设计可采用直梁和折叠梁.直梁结构质量弹簧系统的弹性系数可通过几何建模的方法确定,但折叠梁结构则难于采用该方法确定.本文以单折梁为例,采用有限元仿真,通过建立单折梁结构和直梁结构在受到相同外力时位移变化之间的关系,推导出单折梁结构的弹性系数和驱动电压计算公式.此外,通过分析单折梁结构和直梁结构的水平式<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>磁强计1～4阶模态振型,发现单折梁结构的1～3阶模态的运动方向与直梁结构相同;单折梁结构第4阶模态的方向既有绕x轴的转动,也有绕Z轴的转动,绕z轴的转动为主要运动.","authors":[{"authorName":"胡晓莉","id":"0b9ef2c2-fde6-4025-b014-7f77615c3d84","originalAuthorName":"胡晓莉"},{"authorName":"汤学华","id":"695268a2-fe6b-48d6-8bb3-a849cd7bb9b2","originalAuthorName":"汤学华"},{"authorName":"尤政","id":"1761c390-a52f-477c-8ef4-6fcbe4839d63","originalAuthorName":"尤政"}],"doi":"10.3969/j.issn.1007-4252.2008.02.058","fpage":"548","id":"425f2d5b-54ff-4f91-9ed8-c941d9a2101c","issue":"2","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"9ec81c4c-6ee3-429d-b381-e37c2fa2e4e5","keyword":"<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>磁强计","originalKeyword":"隧穿磁强计"},{"id":"32b015d2-dd84-411e-b422-2abae6de1346","keyword":"单折梁结构","originalKeyword":"单折梁结构"},{"id":"18c63923-cb17-4405-abb1-c59ba0016a90","keyword":"有限元仿真","originalKeyword":"有限元仿真"}],"language":"zh","publisherId":"gnclyqjxb200802058","title":"单折梁结构的水平式<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>磁强计的仿真","volume":"14","year":"2008"},{"abstractinfo":"本工作设计了一种基于AlAs/InGaAs/GaAs量子<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>效应的纳机电拍子式声传感器,并采用ANSYS有限元分析软件对敏感元件的布置位置进行了最优化仿真设计.在加工工艺上,采用双空气桥技术和Au/Ge/Ni合金膜系欧姆接触技术有效降低了电容、电阻等对器件结构性能的影响;在传感器的具体加工过程中,共振<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>结构(RTS)和拍子结构是通过控制孔技术一次流片完成的.对所加工的传感器进行了初步测试,结果表明,传感器频响能较好的与仿真结果相吻合,1.3KHz时同时具有较好的线性特性.","authors":[{"authorName":"仝召民","id":"e2f76c61-c852-4fc1-baff-a5456c663471","originalAuthorName":"仝召民"},{"authorName":"薛晨阳","id":"a9c02a91-e08a-4549-8017-0c8163e59d3e","originalAuthorName":"薛晨阳"},{"authorName":"张斌珍","id":"68a0cbc3-511d-4c5d-bc2a-f0a355b635a5","originalAuthorName":"张斌珍"},{"authorName":"刘俊","id":"0dcdbdf8-2f32-420f-bae4-1d960fd2f86e","originalAuthorName":"刘俊"},{"authorName":"乔慧","id":"a4b7116e-65e6-4f1b-b190-0036aee70036","originalAuthorName":"乔慧"},{"authorName":"郭慧芳","id":"63b86a97-b0f4-4e14-81b4-7305be9b409c","originalAuthorName":"郭慧芳"}],"doi":"10.3969/j.issn.1007-4252.2008.01.006","fpage":"23","id":"b0347997-1b92-4255-bf1c-bd65d8425b7d","issue":"1","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"af57ae1b-af20-495a-a92f-f12d40ba7554","keyword":"AlAs/InGaAs/GaAs","originalKeyword":"AlAs/InGaAs/GaAs"},{"id":"9b88c901-5252-45ed-a3d7-0428b0f3fa20","keyword":"拍子","originalKeyword":"拍子"},{"id":"3cb86ad5-a93a-411d-88e4-a225b1b9bdf9","keyword":"声传感器","originalKeyword":"声传感器"},{"id":"b31c5873-c915-4132-a3cf-67a16d7a6f81","keyword":"共振<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>结构","originalKeyword":"共振隧穿结构"}],"language":"zh","publisherId":"gnclyqjxb200801006","title":"基于AlAs/InGaAs/GaAs共振<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>效应的纳机电声传感器研制","volume":"14","year":"2008"}],"totalpage":305,"totalrecord":3045}