{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":2,"startPagecode":1},"records":[{"abstractinfo":"详细论述了光子晶体概念提出到现在的十五年的研究进展.在阐述了光子晶体的概念及其抑制自发辐射和光子局域化等特性后,分别介绍了关于光子晶体的理论研究、实验研究和应用研究.理论研究重点介绍了平面波展开法、格林函数法、时域有限差分法、转移矩阵法.实验研究重点介绍了光子晶体的制作方法:打孔法、逐层叠加法、微机械技术、光学方法,反蛋白石法及刻蚀等多种半导体制作技术,同时介绍了光子晶体特性参数的测量.应用研究重点介绍了光晶体光纤和波导、低损耗反射镜和超棱镜、光子晶体微谐振腔、光子晶体滤波器、高效发光二极管和光子晶体偏振器、非线性光学效应、低阈值激光振荡等.","authors":[{"authorName":"邓开发","id":"15f401a8-bfbe-4ea4-bfd6-582c89d48d47","originalAuthorName":"邓开发"},{"authorName":"是度芳","id":"5d2cd4ed-d378-410c-a4bf-20e605ec6e2e","originalAuthorName":"是度芳"},{"authorName":"<span style=\"color:red\">蒋</span><span style=\"color:red\">美萍</span>","id":"cbd751b8-78aa-4799-95fd-efacf760dcab","originalAuthorName":"蒋美萍"},{"authorName":"李承芳","id":"a8789796-b86b-4551-9099-1c7d44df554e","originalAuthorName":"李承芳"}],"doi":"10.3969/j.issn.1007-5461.2004.05.003","fpage":"555","id":"eafdbdbf-057c-4056-9078-7463da06133a","issue":"5","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"d6f57d89-6533-4efb-b5af-d72cffa49561","keyword":"光子晶体","originalKeyword":"光子晶体"},{"id":"9421ee6c-b08c-4a9e-ba35-c248d005d315","keyword":"光子带隙","originalKeyword":"光子带隙"},{"id":"432bc60b-4083-4a06-ad46-c7f1b7094451","keyword":"自发辐射抑制","originalKeyword":"自发辐射抑制"},{"id":"10cc1e00-d730-457c-bed9-de310756a5f6","keyword":"光子局域化","originalKeyword":"光子局域化"}],"language":"zh","publisherId":"lzdzxb200405003","title":"光子晶体研究进展","volume":"21","year":"2004"},{"abstractinfo":"光学微腔中原子之自发辐射与自由空间中原子的自发辐射有着重要的不同.微腔能够控制腔内原子的自发辐射,使自发辐射得到抑制或增强,并有可能使自发辐射成为一个可逆过程.由此发展起来的腔量子电动力学能够阐述腔场与原子的相互作用.本文简要介绍了这一研究领域的背景和进展,同时介绍了微腔的重要应用--无阈值激光器.","authors":[{"authorName":"<span style=\"color:red\">蒋</span><span style=\"color:red\">美萍</span>","id":"cf65d81b-6907-4afb-a8ad-0901d89cae47","originalAuthorName":"蒋美萍"},{"authorName":"江兴方","id":"1e624b62-c410-4430-be7b-057033d647e2","originalAuthorName":"江兴方"},{"authorName":"沈小明","id":"0593d63e-3b48-48f0-9767-188aad0ac1b9","originalAuthorName":"沈小明"},{"authorName":"李承芳","id":"3fb2aaf0-90d0-423a-a56b-4d139350fcee","originalAuthorName":"李承芳"},{"authorName":"是度芳","id":"6a163fdf-1832-4bec-928a-b3a3f00f5d73","originalAuthorName":"是度芳"},{"authorName":"陈光","id":"3a1e821b-0fda-4d6c-93d0-9286ba429d83","originalAuthorName":"陈光"}],"doi":"10.3969/j.issn.1007-5461.2004.06.016","fpage":"788","id":"57ddcb31-70b0-4af8-9bb1-fbe0de8e332c","issue":"6","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"b851c6b3-69ae-4a03-803b-1f6d0bfb8326","keyword":"量子光学","originalKeyword":"量子光学"},{"id":"80161e61-4453-44a1-815e-66b4d1d860dc","keyword":"腔量子电动力学","originalKeyword":"腔量子电动力学"},{"id":"e97a86fc-d0d9-4884-8cdd-d5868563fe96","keyword":"微腔","originalKeyword":"微腔"},{"id":"43010362-9333-4d77-b53d-fe2dedb9b4db","keyword":"控制自发辐射","originalKeyword":"控制自发辐射"},{"id":"d20441e2-68e6-4b30-a152-3e8d2a6c3e39","keyword":"强耦合","originalKeyword":"强耦合"},{"id":"f57cbf3e-2083-4075-9b1e-b61f3e5ca409","keyword":"无阈值激光器","originalKeyword":"无阈值激光器"}],"language":"zh","publisherId":"lzdzxb200406016","title":"微腔与腔量子电动力学研究进展","volume":"21","year":"2004"},{"abstractinfo":"本文采用光子晶体带隙结构计算的Pendry理论研究了一维光子晶体的偏振特性,由Pendry理论导出的传输矩阵法计算了TE模和TM模的透射谱,不同入射角时基频PBG(Photonic band gap)分布,固定入射角及入射光频率时透射率随介质a的填充率因子变化曲线.","authors":[{"authorName":"<span style=\"color:red\">蒋</span><span style=\"color:red\">美萍</span>","id":"5aeefc5a-d06a-43e4-b604-f483b0c101ea","originalAuthorName":"蒋美萍"},{"authorName":"江兴方","id":"1e58734d-90d9-4f5f-b3af-bc2bf3671c7a","originalAuthorName":"江兴方"},{"authorName":"沈小明","id":"f3e5b11a-4488-4208-9497-2fc0a081636e","originalAuthorName":"沈小明"},{"authorName":"王旭东","id":"934aaac5-f15b-44e5-889a-19c63b103cc4","originalAuthorName":"王旭东"},{"authorName":"是度芳","id":"104e0caa-0a85-4910-b8a1-dc396428a8ef","originalAuthorName":"是度芳"},{"authorName":"陈光","id":"302eff7e-ebd0-4b7f-896a-18df45b9ae90","originalAuthorName":"陈光"}],"doi":"10.3969/j.issn.1007-5461.2005.04.025","fpage":"612","id":"b90aacfc-abb4-4c68-a6fa-398b9a7b5904","issue":"4","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"8284d88f-77be-48fb-928e-af25b2d9ed83","keyword":"一维光子晶体","originalKeyword":"一维光子晶体"},{"id":"62830225-967d-4bbf-a442-d46917be28e3","keyword":"偏振特性","originalKeyword":"偏振特性"},{"id":"d9aefca5-ca5d-4ed9-ac18-78b1b3da330c","keyword":"传输矩阵","originalKeyword":"传输矩阵"}],"language":"zh","publisherId":"lzdzxb200504025","title":"一维光子晶体的偏振特性研究","volume":"22","year":"2005"},{"abstractinfo":"研究了准周期结构一维光子晶体的带隙特性和滤波特性,对ZnS与MgF2和GaAs与AlAs两种电介质组合的光子晶体在层厚不变、折射率递变和折射率不变、层厚递变以及层厚不变、折射率比递变三种情况下的透射谱作了模拟计算,得到了带隙特性的变化规律,并指出了其在滤波中的应用.与周期结构光子晶体相比,准周期结构光子晶体的透射谱发生移动,带隙宽度改变.","authors":[{"authorName":"<span style=\"color:red\">蒋</span><span style=\"color:red\">美萍</span>","id":"260a5f5b-5474-4bf9-8f31-7baeede9b810","originalAuthorName":"蒋美萍"},{"authorName":"王旭东","id":"c15e4518-d7e9-46fb-8573-c739e909825a","originalAuthorName":"王旭东"},{"authorName":"巢小刚","id":"f84fc94e-eb29-40b5-ab89-53b519a86f53","originalAuthorName":"巢小刚"},{"authorName":"是度芳","id":"d069d397-abaf-4155-986a-92a1f06a44d2","originalAuthorName":"是度芳"},{"authorName":"陈光","id":"e1aacc4b-4de4-40f7-93b0-b7f13c0f67f4","originalAuthorName":"陈光"}],"doi":"10.3969/j.issn.1007-5461.2005.06.011","fpage":"884","id":"2d1ee1a0-466f-4025-a163-0d3752acc642","issue":"6","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"746c4e8d-9ee2-4960-9498-5f72f864b0e3","keyword":"量子光学","originalKeyword":"量子光学"},{"id":"0280f6c5-ff32-4e29-8782-cb149dab2651","keyword":"带隙特性","originalKeyword":"带隙特性"},{"id":"f277e79f-a6ca-4e80-bff7-391da4e9ef79","keyword":"数值计算","originalKeyword":"数值计算"},{"id":"80839b53-62c9-4c31-a459-1a324e960b0b","keyword":"准周期结构","originalKeyword":"准周期结构"},{"id":"4cf399de-5974-4536-bde1-f3443bafbf22","keyword":"光子晶体","originalKeyword":"光子晶体"},{"id":"3b5a17ac-92f1-40ac-bf3f-46ef179b954b","keyword":"滤波","originalKeyword":"滤波"}],"language":"zh","publisherId":"lzdzxb200506011","title":"准周期结构一维光子晶体的带隙特性与滤波特性","volume":"22","year":"2005"},{"abstractinfo":"影响非线性微腔双稳态阈值的因素很多,例如电介质折射率、周期数、缺陷层厚度、谱线宽度等.但是腔模红移起到了十分重要的作用.从理论上分析了红移对双稳态阈值的影响,并作了数值模拟.红移是研究双稳态阈值首先要考虑的问题.","authors":[{"authorName":"沈小明","id":"d73c2cfb-2949-48b8-822c-5ec34d5a738a","originalAuthorName":"沈小明"},{"authorName":"<span style=\"color:red\">蒋</span><span style=\"color:red\">美萍</span>","id":"24e46a5f-df7e-4d25-b3df-b89ea7621bdc","originalAuthorName":"蒋美萍"},{"authorName":"陈宪锋","id":"118b78ed-2605-40d1-94d2-d19b5954d72e","originalAuthorName":"陈宪锋"},{"authorName":"倪重文","id":"3abaa7be-a531-4242-93dc-7d436945cab8","originalAuthorName":"倪重文"},{"authorName":"巢小刚","id":"1efc9f02-aec9-4c39-bc54-0fe2e4d4aff6","originalAuthorName":"巢小刚"},{"authorName":"是度芳","id":"48312182-8a50-47ba-9f15-e2e27a2c99b5","originalAuthorName":"是度芳"}],"doi":"10.3969/j.issn.1007-5461.2006.03.028","fpage":"413","id":"57e1910c-3ca7-465b-8f8f-fa05057a1fd4","issue":"3","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"df9a1ae7-ce47-45b1-b8d9-840969d99a1a","keyword":"非线性光学","originalKeyword":"非线性光学"},{"id":"8ee85b7a-c799-4b50-bc6c-623b16e15058","keyword":"红移","originalKeyword":"红移"},{"id":"c8a69123-4b99-41c0-8780-b3ef267a2fb3","keyword":"微腔","originalKeyword":"微腔"},{"id":"33fa5fb1-fb4f-4ada-b5be-3fedfeb41d6a","keyword":"双稳态阈值","originalKeyword":"双稳态阈值"}],"language":"zh","publisherId":"lzdzxb200603028","title":"腔模红移对非线性微腔双稳态阈值的影响","volume":"23","year":"2006"},{"abstractinfo":"给出了一种判断一维光子晶体禁带位置的相位图,利用扩展相位图可方便地描述光子晶体的禁带位置和禁带特征.研究发现,当光子晶体为1/4波片层堆时,光子晶体的禁带最宽;若要进一步展宽禁带,需提高构成周期单元的两种介质的折射率比.对于一般的光子晶体,若周期单元中两种介质的光学厚度不等,则其禁带中心将偏离中心频率的整数倍.此外还研究了禁带中心区的透射率,给出了中心频率附近透射率的一级近似解析解,并由此定性讨论了Fabry-Perot腔的谱线宽度和品质因子.","authors":[{"authorName":"<span style=\"color:red\">蒋</span><span style=\"color:red\">美萍</span>","id":"4a6783b0-1edb-48e9-9847-56dfc844be56","originalAuthorName":"蒋美萍"},{"authorName":"陈宪锋","id":"b0a91978-5688-4cbb-aefe-9cb7f37c3dd3","originalAuthorName":"陈宪锋"},{"authorName":"唐丽","id":"f528cd77-9c8f-461d-a960-f137a91ed651","originalAuthorName":"唐丽"},{"authorName":"沈小明","id":"26d54c76-e1a4-4247-b973-e8530f8f84e6","originalAuthorName":"沈小明"},{"authorName":"是度芳","id":"76b0501e-302b-44e7-b54e-d4d454581e67","originalAuthorName":"是度芳"}],"doi":"10.3969/j.issn.1007-5461.2006.06.020","fpage":"853","id":"6d610c8a-2f33-48dc-bca7-7095e71bbe2f","issue":"6","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"93dbdc53-86b5-4fb2-9dcb-f49857a3c073","keyword":"量子光学","originalKeyword":"量子光学"},{"id":"a73a5122-dcd5-42d8-a7e2-e9dfc7da073a","keyword":"光子晶体","originalKeyword":"光子晶体"},{"id":"600c01d2-d91e-4d82-8f79-847a99ae0d7a","keyword":"相位图","originalKeyword":"相位图"},{"id":"97950271-c39e-481d-92d0-5d7e469d3128","keyword":"禁带","originalKeyword":"禁带"}],"language":"zh","publisherId":"lzdzxb200606020","title":"相位图法研究光子晶体的禁带","volume":"23","year":"2006"},{"abstractinfo":"研究了光子晶体Bragg镜的反射相移及透射相移,发现随着入射光频率的增大,相位均在增大.在中心频率附近反射相移和透射相移都与频率成线性关系.利用泰勒展开式的一级近似,得到了中心频率附近反射相移和透射相移的一级近似解析解,它们能很好地描述相移的变化规律.利用相移特性研究了Bragg微腔的共振模随微腔厚度的频率变化特性,同时亦给出了中心频率附近共振模频率的一级近似解析解.","authors":[{"authorName":"陈宪锋","id":"0faaf6bd-d3b0-4d79-9a58-dac4f9c66c01","originalAuthorName":"陈宪锋"},{"authorName":"沈小明","id":"4e2d5fc5-459a-4da7-a6f0-575b76a376b0","originalAuthorName":"沈小明"},{"authorName":"<span style=\"color:red\">蒋</span><span style=\"color:red\">美萍</span>","id":"c015b1ad-16ab-4e71-b0a7-95c1b24568df","originalAuthorName":"蒋美萍"},{"authorName":"唐丽","id":"7a5f659e-d954-4bae-9c62-335ff4708989","originalAuthorName":"唐丽"},{"authorName":"是度芳","id":"fd881b0c-4a8f-4b14-86a0-84596f3f59bc","originalAuthorName":"是度芳"}],"doi":"10.3969/j.issn.1007-5461.2007.02.011","fpage":"183","id":"fa614b77-5491-4edd-ad39-825adc6757af","issue":"2","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"3b1e5bc3-7be7-4340-a942-cdc293d2217f","keyword":"量子光学","originalKeyword":"量子光学"},{"id":"f353bbf8-6bc3-4a68-a242-a90993ad0d1f","keyword":"相移","originalKeyword":"相移"},{"id":"19d1ad63-0c97-4f19-bebb-b720856bc296","keyword":"光子晶体","originalKeyword":"光子晶体"},{"id":"4e085b45-8636-4c16-989b-7e4748d8358c","keyword":"Bragg微腔","originalKeyword":"Bragg微腔"},{"id":"7a5fa3d7-c93f-4d0a-b761-c18e167a4e64","keyword":"共振模","originalKeyword":"共振模"}],"language":"zh","publisherId":"lzdzxb200702011","title":"光子晶体Bragg镜的相移特性及腔模研究","volume":"24","year":"2007"},{"abstractinfo":"引入了矢量非傍轴厄米余弦高斯(HCosG)光束的概念,从矢量瑞利 - 索末菲衍射积分公式出发,得出了矢量非傍轴HCosG光束在自由空间的解析传输公式,并将非傍轴HCosG光束在自由空间衍射时轴上、近场、远场以及在傍轴条件下的传输作为特例给出.数值计算和分析表明,对于矢量非傍轴HCosG光束,参数和偏心参数均对光束的非傍轴特性有重要影响.此外,其轴上光强分布与光束的阶数及其奇偶性有关.","authors":[{"authorName":"唐斌","id":"f75c382e-28b5-4326-a1b7-a895a8b50c2f","originalAuthorName":"唐斌"},{"authorName":"<span style=\"color:red\">蒋</span><span style=\"color:red\">美萍</span>","id":"c1a24771-c9bb-4561-9e1a-a8df37cabf60","originalAuthorName":"蒋美萍"},{"authorName":"江兴方","id":"e8141cf2-7bab-45c4-910e-deaf85ddd379","originalAuthorName":"江兴方"},{"authorName":"金铱","id":"a5160193-a5b1-4353-8b03-1b5f29ab04dc","originalAuthorName":"金铱"}],"doi":"10.3969/j.issn.1007-5461.2008.05.003","fpage":"528","id":"0c891212-2601-4a6c-9bf3-12e9a4d0fb1b","issue":"5","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"77db70e6-eaaa-45bf-83e8-08221e536b3b","keyword":"物理光学","originalKeyword":"物理光学"},{"id":"8788f0c8-8934-4f31-942a-978c85c33467","keyword":"矢量非傍轴厄米余弦高斯光束","originalKeyword":"矢量非傍轴厄米余弦高斯光束"},{"id":"41c2d904-56a5-4d62-a88e-ee26f54963b2","keyword":"瑞利-索末菲衍射积分","originalKeyword":"瑞利-索末菲衍射积分"},{"id":"8ad27ab0-462c-44df-87b8-ba337ac49e39","keyword":"f参数","originalKeyword":"f参数"},{"id":"7dab2e25-e6e4-464e-a586-4ed5f676ea2d","keyword":"偏心参数","originalKeyword":"偏心参数"}],"language":"zh","publisherId":"lzdzxb200805003","title":"矢量非傍轴厄米余弦高斯光束","volume":"25","year":"2008"},{"abstractinfo":"基于F-P腔理论,通过引入有效折射率概念,研究了非线性微腔的光学双稳态,给出了相应的解析表达式.理论曲线与其它文献的数值模拟结果相吻合.研究表明,系统要产生双稳态现象,必须对入射光预置一定的偏移量.若介质是聚焦型Kerr介质,入射光波必须红移;反之则蓝移.临界的偏移量是腔共振模线宽的0.866倍.","authors":[{"authorName":"金铱","id":"76d65957-8d7e-416a-bbed-3938b9917bd7","originalAuthorName":"金铱"},{"authorName":"陈宪锋","id":"a7e2fe0b-4d23-48f7-b8b3-d74fee0b0085","originalAuthorName":"陈宪锋"},{"authorName":"黄正逸","id":"d76b4944-72da-4c98-9627-d305e5c34415","originalAuthorName":"黄正逸"},{"authorName":"沈小明","id":"100e917e-9cdc-43fa-b755-01c43d28cd7d","originalAuthorName":"沈小明"},{"authorName":"<span style=\"color:red\">蒋</span><span style=\"color:red\">美萍</span>","id":"35f2c3fb-b1d9-4a5d-9000-4655db0afd72","originalAuthorName":"蒋美萍"}],"doi":"10.3969/j.issn.1007-5461.2009.05.014","fpage":"591","id":"753b6551-abf0-4cb7-9ac1-9e836e00ec72","issue":"5","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"d2711800-38ac-44a4-871c-bc0f52fe960b","keyword":"非线性光学","originalKeyword":"非线性光学"},{"id":"4653fe8d-9354-4193-bd07-95ba26dc637d","keyword":"双稳态","originalKeyword":"双稳态"},{"id":"e009136c-7291-4ab5-a6e6-a031d8e823ad","keyword":"有效折射率","originalKeyword":"有效折射率"},{"id":"858ea354-03f5-4f87-89ea-3b912e26c40c","keyword":"Kerr介质","originalKeyword":"Kerr介质"},{"id":"98c165f7-64d0-47bd-9827-7904532a4e2a","keyword":"F-P腔","originalKeyword":"F-P腔"}],"language":"zh","publisherId":"lzdzxb200905014","title":"非线性微腔的光学双稳态","volume":"26","year":"2009"},{"abstractinfo":"采用平衡直流磁控溅射技术,通过改变衬底偏压在玻璃衬底上制备了Cu/Cu2O弥散复合薄膜,并利用扫描电子显微镜、X射线衍射仪、四探针测试仪和紫外-可见分光光度计等进行表征与分析.研究发现,Cu/Cu2O弥散复合薄膜表现出金属和半导体双特性,其电阻率范围为(5.23～9.98)×10-5 Ω·cm,禁带宽度范围为2.23～2.47 eV.同时,研究还发现衬底偏压对Cu/Cu2O弥散复合薄膜的形貌、结构、电学和光学性能都产生了较大的影响,特别是当衬底偏压为-100 V时薄膜样品的表面最为致密,结晶程度最好,电阻率最低,禁带宽度最窄.进一步地,对平衡磁控溅射过程的偏压效应进行了分析,并提出了两种区别于传统轰击和再溅射作用的新机制.","authors":[{"authorName":"刘阳","id":"e1bc61a4-af49-48c9-8c85-997e6f63581f","originalAuthorName":"刘阳"},{"authorName":"马骥","id":"03d154dc-3a23-4bbc-a9c6-4bf2763331f2","originalAuthorName":"马骥"},{"authorName":"唐斌","id":"1e2423b5-b77c-4378-be4c-4bb4c908bb2a","originalAuthorName":"唐斌"},{"authorName":"<span style=\"color:red\">蒋</span><span style=\"color:red\">美萍</span>","id":"8f486267-0f4b-4466-82d4-05a01635c358","originalAuthorName":"蒋美萍"},{"authorName":"苏江滨","id":"f78b370c-5496-4204-a6c1-837476b3cd3e","originalAuthorName":"苏江滨"},{"authorName":"周磊","id":"1693e168-0ec2-43b2-acb0-551122c3c89e","originalAuthorName":"周磊"}],"doi":"10.3969/j.issn.1001-9731.2016.03.038","fpage":"3205","id":"6f4853a5-e65d-4033-9d27-599373d27d4c","issue":"3","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"c41870d5-aca6-4b6e-858b-d2e1b993c5b8","keyword":"Cu/Cu20","originalKeyword":"Cu/Cu20"},{"id":"d8fc50c0-9501-4f72-93b9-4274310f6457","keyword":"弥散复合薄膜","originalKeyword":"弥散复合薄膜"},{"id":"8358ec46-df0f-4f7c-ba69-5e99794c3ede","keyword":"磁控溅射","originalKeyword":"磁控溅射"},{"id":"7c5f3e16-12f2-4746-8c9d-55a91b29aa43","keyword":"衬底偏压","originalKeyword":"衬底偏压"},{"id":"e7ae40e1-93b3-4d59-ae2e-99cb08ce8ea1","keyword":"电阻率","originalKeyword":"电阻率"},{"id":"a7424ac1-e1d6-4f09-85ba-d9f7489f5659","keyword":"禁带宽度","originalKeyword":"禁带宽度"}],"language":"zh","publisherId":"gncl201603038","title":"金属电阻率Cu/Cu2O半导体弥散复合薄膜的制备及其偏压效应","volume":"47","year":"2016"}],"totalpage":2,"totalrecord":12}