{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"采用正电子湮没技术对壳聚糖/聚乙烯吡咯烷酮(CS/PVP)溶液共混膜的自由体积特性进行了研究,根据τ3计算了其自由体积平均孔穴半径R,当聚乙烯吡咯烷酮组分加入量较少时,R随PVP在共混物中的含量增加开始略有减小,然后逐渐有所增加,PVP含量少于20%时,自由体积孔穴半径小于纯的CS本身,扫描电镜发现共混膜没有发生相分离,PVP与CS相容性好.另外,PVP的加入可以提高膜在湿态环境中的柔软性,共混膜在林格氏液中的降解性能优于纯CS膜.","authors":[{"authorName":"鲍高强","id":"088fc5cd-2c75-4e23-b4ec-dbeca2803df4","originalAuthorName":"鲍高强"},{"authorName":"曾敏峰","id":"bb9b622c-a5b9-4c88-9e63-21e5bf214541","originalAuthorName":"曾敏峰"},{"authorName":"孙旭东","id":"c15442da-04b7-4a1a-a1da-f414be1fa49a","originalAuthorName":"孙旭东"},{"authorName":"姚献东","id":"a9c4685b-572f-4d83-ad9c-75691a2408c8","originalAuthorName":"姚献东"},{"authorName":"肖慧泉","id":"83b376cf-4e69-4d44-8f40-03545947f3f7","originalAuthorName":"肖慧泉"},{"authorName":"何宁德","id":"1d28bdda-50ae-4434-9e86-882e6bd1f277","originalAuthorName":"何宁德"},{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">宝</span><span style=\"color:red\">义</span>","id":"b0bde369-332b-46c4-9816-130f5bc62dc9","originalAuthorName":"王宝义"},{"authorName":"齐陈泽","id":"89718808-3ed8-449f-8a30-8cbb335981c7","originalAuthorName":"齐陈泽"}],"doi":"","fpage":"146","id":"55b86668-56ce-4501-9373-6fb8f47c0248","issue":"4","journal":{"abbrevTitle":"GFZCLKXYGC","coverImgSrc":"journal/img/cover/GFZCLKXYGC.jpg","id":"31","issnPpub":"1000-7555","publisherId":"GFZCLKXYGC","title":"高分子材料科学与工程"},"keywords":[{"id":"2c9266e9-4b0c-4df9-a4d0-0b9a6eda0dfc","keyword":"壳聚糖","originalKeyword":"壳聚糖"},{"id":"db3f4e6e-51c5-4a91-8a1c-8641fb8ba2bd","keyword":"聚乙烯吡咯烷酮","originalKeyword":"聚乙烯吡咯烷酮"},{"id":"e7968838-928e-4de1-bcdc-14194b3a15f9","keyword":"自由体积","originalKeyword":"自由体积"},{"id":"c0eb9279-0b68-4b90-abc5-a37ad880a86c","keyword":"相容性","originalKeyword":"相容性"}],"language":"zh","publisherId":"gfzclkxygc200604037","title":"壳聚糖/聚乙烯吡咯烷酮共混膜的自由体积特性及物性研究","volume":"22","year":"2006"},{"abstractinfo":"针对近年来材料辐照改性、辐照损伤等复杂微观缺陷结构的研究,以二元Fe-Cu合金辐照损伤缺陷及微量Cu析出物的微观结构研究为基础,综合论述正电子湮没谱学技术(PALS,CDB,AMOC)在Fe-Cu合金复杂微观缺陷结构研究中的应用研究进展.","authors":[{"authorName":"成国栋","id":"fdc953d8-2f70-4f0c-b025-3c3127a9e9f5","originalAuthorName":"成国栋"},{"authorName":"曹兴忠","id":"f1f2b634-a789-4eef-aee0-723d97fe84b3","originalAuthorName":"曹兴忠"},{"authorName":"吴建平","id":"d6437af1-9f2c-44e5-9248-c31e2eb76b82","originalAuthorName":"吴建平"},{"authorName":"伍海彪","id":"ff4f455e-f883-489e-8f0a-9932d93f7e80","originalAuthorName":"伍海彪"},{"authorName":"杨静","id":"70244f38-2840-4bdc-bfae-4827cc95d700","originalAuthorName":"杨静"},{"authorName":"姜小盼","id":"30a4ddbe-48cb-4cc2-95e1-2672d2b5ec8f","originalAuthorName":"姜小盼"},{"authorName":"于润升","id":"fbc762e4-a24e-41e0-9b47-e14ee13c3c41","originalAuthorName":"于润升"},{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">宝</span><span style=\"color:red\">义</span>","id":"cb6b4935-ef60-40f4-b3b1-f2007bbd2ec5","originalAuthorName":"王宝义"}],"doi":"","fpage":"133","id":"fa27c719-2fd8-4886-a7c9-1c45beee338a","issue":"3","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"b5f4245d-a087-4a42-913c-74bbb6f83e41","keyword":"正电子湮没","originalKeyword":"正电子湮没"},{"id":"38175bd3-42e4-45e0-b912-848d5cab3dda","keyword":"Fe-Cu合金","originalKeyword":"Fe-Cu合金"},{"id":"f4e762e5-1fd7-4359-8fae-5fb06e1f2152","keyword":"微观缺陷","originalKeyword":"微观缺陷"},{"id":"95c801a7-ea8f-4219-9aac-10fd149ed70a","keyword":"Cu析出","originalKeyword":"Cu析出"}],"language":"zh","publisherId":"cldb201303028","title":"应用正电子湮没谱学技术研究Fe-Cu合金微观缺陷的进展","volume":"27","year":"2013"},{"abstractinfo":"简要介绍了广泛应用于表面科学的灵敏核探针--慢正电子束设备的原理、构造和应用, 阐述了北京慢正电子束流装置的设计原理和性能, 讨论了北京慢正电子束流装置今后的研究前景.","authors":[{"authorName":"魏龙","id":"95bfcd62-cdc9-424e-90af-928a81a2fa91","originalAuthorName":"魏龙"},{"authorName":"陈红民","id":"a325500a-b8dd-4ee2-b9b7-e2765dbf6331","originalAuthorName":"陈红民"},{"authorName":"于润升","id":"f6e79fd0-90ef-408c-b3d9-5b637ff6b589","originalAuthorName":"于润升"},{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">宝</span><span style=\"color:red\">义</span>","id":"ea2f991a-e877-4755-96c7-e98855466e30","originalAuthorName":"王宝义"},{"authorName":"张天保","id":"df048a7f-19d6-4cf0-bcb7-f56039cf2818","originalAuthorName":"张天保"},{"authorName":"郁伟中","id":"38df3e28-a63e-4032-a5c4-318c833f2a88","originalAuthorName":"郁伟中"},{"authorName":"何元金","id":"929aa675-451a-4cf9-947a-0a66676d7467","originalAuthorName":"何元金"},{"authorName":"<span style=\"color:red\">王</span>天民","id":"924282ab-37de-490f-b9eb-fcd808d002c3","originalAuthorName":"王天民"}],"doi":"10.3969/j.issn.1007-4627.2000.02.012","fpage":"117","id":"4237e9f1-bfa1-4b6e-a560-3d3c3ad3ab79","issue":"2","journal":{"abbrevTitle":"YZHWLPL","coverImgSrc":"journal/img/cover/YZHWLPL.jpg","id":"78","issnPpub":"1007-4627","publisherId":"YZHWLPL","title":"原子核物理评论   "},"keywords":[{"id":"50d07871-73ab-4545-8aae-3a09ae6ef958","keyword":"慢正电子束流","originalKeyword":"慢正电子束流"},{"id":"33e29eb0-a777-4574-842c-07948891e3c0","keyword":"正电子湮没","originalKeyword":"正电子湮没"},{"id":"4ba4611a-85cd-4558-a4eb-6bd8b8a6e800","keyword":"表面界面","originalKeyword":"表面界面"}],"language":"zh","publisherId":"yzhwlpl200002012","title":"一种新的灵敏核探针--慢正电子束流装置","volume":"17","year":"2000"},{"abstractinfo":"对稀土铕离子掺杂聚合物基荧光材料的制备方法进行了分析归纳,介绍了稀土离子配位数及离子簇的存在对发光性能的影响,同时列举了聚合物基荧光复合材料在农业、生物医学、防伪鉴别等方面的应用.针对实践应用对物理性能的要求,分析提出了传统方法制得的材料在应用中存在的问题并对具有综合特性的方法进行了展望.总结认为针对不同应用制备镶嵌荧光物质的前体作为复合材料两相的桥梁这一框架方法,具有极大的应用前景.","authors":[{"authorName":"吴亚茹","id":"08b17739-8b7a-4e0c-87fc-a87588586a97","originalAuthorName":"吴亚茹"},{"authorName":"曹兴忠","id":"9bbbc8a7-c84f-45ca-9f28-0074da727bb2","originalAuthorName":"曹兴忠"},{"authorName":"李玉晓","id":"37a678c1-2253-4f89-8926-a71ea1518618","originalAuthorName":"李玉晓"},{"authorName":"杨静","id":"20bd99ec-c91a-483a-935a-4372d77359e9","originalAuthorName":"杨静"},{"authorName":"张鹏","id":"3ced6b78-7d20-4676-a840-6f5914fdb47b","originalAuthorName":"张鹏"},{"authorName":"于润升","id":"511d255c-88d9-404b-8a22-f5283f87c3f6","originalAuthorName":"于润升"},{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">宝</span><span style=\"color:red\">义</span>","id":"9d39e5f0-cd47-4ddb-8deb-acd7a88dc729","originalAuthorName":"王宝义"}],"doi":"10.11896/j.issn.1005-023X.2015.09.023","fpage":"141","id":"7922dd9a-ee56-42d9-afea-1c9a4db1046f","issue":"9","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"7f7b73e4-5a26-471d-91d3-b8de63ea26eb","keyword":"高分子","originalKeyword":"高分子"},{"id":"e7cfe127-7171-4db7-a822-8320e224ec79","keyword":"稀土化合物","originalKeyword":"稀土化合物"},{"id":"919cd0e9-6fa3-45f8-81cc-19605a4fb375","keyword":"配位","originalKeyword":"配位"},{"id":"df283e4b-4d66-496f-9e33-eb74ae471d89","keyword":"荧光探针","originalKeyword":"荧光探针"}],"language":"zh","publisherId":"cldb201509023","title":"稀土铕离子掺杂聚合物基荧光材料的研究进展","volume":"29","year":"2015"},{"abstractinfo":"室温下将130 keV，5×1014 cm-2 B离子和55 keV，1×1016 cm-2 H离子单独或顺次注入到单晶Si中，采用横截面试样透射电子显微镜(XTEM)和慢正电子湮没技术(SPAT)研究了离子注入引起的微观缺陷的产生及其热演变。XTEM观测结果显示，B和H离子顺次注入到单晶Si可有效减少(111)取向的H板层缺陷，并促进了(100)取向的H板层缺陷的择优生长。SPAT观测结果显示，在顺次注入的样品中，B离子平均射程处保留了大量的空位型缺陷。以上结果表明，B离子本身及B离子注入所产生的空位型缺陷对板层缺陷的生长起到了促进作用。","authors":[{"authorName":"张蓓","id":"453ca524-cc53-4e6a-a4d1-dc2a89af464e","originalAuthorName":"张蓓"},{"authorName":"张鹏","id":"e6510181-e3be-45bf-bd5c-c93069f0ecbe","originalAuthorName":"张鹏"},{"authorName":"王军","id":"ce51f97d-496c-4750-ba81-0a59af20cef5","originalAuthorName":"王军"},{"authorName":"朱飞","id":"73650306-613d-4a15-9905-ed84eebba192","originalAuthorName":"朱飞"},{"authorName":"曹兴忠","id":"e2475538-0215-4178-9c52-af4c4e47dced","originalAuthorName":"曹兴忠"},{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">宝</span><span style=\"color:red\">义</span>","id":"8895a149-3552-4230-a503-a5dfa0cd41fa","originalAuthorName":"王宝义"},{"authorName":"刘昌龙","id":"b1d709dd-cd34-4836-b8c1-57429d983eb4","originalAuthorName":"刘昌龙"}],"doi":"10.11804/NuclPhysRev.30.04.471","fpage":"471","id":"f6271e87-e968-42e7-acb9-4224b4b29ce1","issue":"4","journal":{"abbrevTitle":"YZHWLPL","coverImgSrc":"journal/img/cover/YZHWLPL.jpg","id":"78","issnPpub":"1007-4627","publisherId":"YZHWLPL","title":"原子核物理评论   "},"keywords":[{"id":"4ff524d6-9047-4fa9-8066-8a7e60c5a309","keyword":"单晶Si","originalKeyword":"单晶Si"},{"id":"94f43ae7-a3cd-4ea9-af21-7d607eee389c","keyword":"B和H离子注入","originalKeyword":"B和H离子注入"},{"id":"d5fe684c-5b07-4304-8752-5f96e7e14c96","keyword":"H板层缺陷","originalKeyword":"H板层缺陷"},{"id":"f3aead42-7da2-41e7-b871-5815cbee7839","keyword":"XTEM","originalKeyword":"XTEM"},{"id":"08cf018a-1685-4822-9cd6-a59963892826","keyword":"SPAT","originalKeyword":"SPAT"}],"language":"zh","publisherId":"yzhwlpl201304016","title":"B和H离子顺次注入单晶Si引起的缺陷及其热演变","volume":"","year":"2013"},{"abstractinfo":"ZnS是一种优良的光电材料并获得了广泛的应用.介绍了ZnS基薄膜电致发光器件的发展历史、结构及发光机理,主要讨论了ZnS基发光薄膜及蒸发法、溅射法、化学气相沉积法、外延法和溶胶-凝胶法等制备方法的最新研究进展,指出了目前存在的问题及今后的发展趋势.","authors":[{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">宝</span><span style=\"color:red\">义</span>","id":"096313a2-6381-438b-8086-9da4bfaf94a3","originalAuthorName":"王宝义"},{"authorName":"张仁刚","id":"fdc47337-e7d3-437a-a69f-337a64d61e2b","originalAuthorName":"张仁刚"},{"authorName":"万冬云","id":"a488de03-2790-4acf-a038-8f6015127cef","originalAuthorName":"万冬云"},{"authorName":"<span style=\"color:red\">王</span>雨田","id":"8cb1f3d1-bad0-4bcd-a8a4-ef696d3c8402","originalAuthorName":"王雨田"},{"authorName":"魏龙","id":"c1696899-e23b-482d-bb18-f4a25dae4c3f","originalAuthorName":"魏龙"}],"doi":"","fpage":"33","id":"256de64f-0761-4360-8746-8b539fcd1d8e","issue":"11","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"f3fb41d6-b648-42fc-bfc5-1b0a74aa543a","keyword":"ZnS薄膜","originalKeyword":"ZnS薄膜"},{"id":"c2dd97bf-885d-43a5-98a4-97418d9565dd","keyword":"电致发光","originalKeyword":"电致发光"},{"id":"7fd39b7b-3416-49b7-9ca6-f6dd5ba3bf8a","keyword":"制备方法","originalKeyword":"制备方法"}],"language":"zh","publisherId":"cldb200311010","title":"ZnS基电致发光薄膜及其制备方法","volume":"17","year":"2003"},{"abstractinfo":"采用真空热蒸发法制备了CsI(Tl)薄膜, 然后进行了不同温度的真空热处理．用X射线衍射仪、扫描电子显微镜、X射线荧光光谱仪及正电子寿命谱仪对CsI(Tl)薄膜样品进行了分析, 并测得了样品的光产额．结果表明, 该CsI(Tl)薄膜沿(200)晶面择优取向生长．经过较低温度退火, CsI薄膜中的Tl<SUP>+</SUP>离子向薄膜表面扩散, 薄膜中缺陷数量增加, 且尺寸较大, 光产额略微增高．经过250℃退火, 薄膜中低温退火所形成缺陷得到恢复, 薄膜缺陷尺寸变小, 且数目减少, 具有较好的结晶状态, 光产额提高．经过400℃退火, 薄膜结构发生显著变化, 薄膜中缺陷大幅增加, 结晶状态变差, Ti+含量减少, 光产额急剧下降．","authors":[{"authorName":"程峰","id":"0cddecb3-fe4a-43a3-9e45-947b439f5fbd","originalAuthorName":"程峰"},{"authorName":"钟玉荣2","id":"e866ba93-7ce4-4805-a3e7-4195c87a3180","originalAuthorName":"钟玉荣2"},{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">宝</span><span style=\"color:red\">义</span>","id":"dd945fbf-4fa5-4a5b-ab07-7fb394132fbe","originalAuthorName":"王宝义"},{"authorName":"<span style=\"color:red\">王</span>天民3","id":"196bdcca-27d6-4a52-b499-aa3d3c08f2c5","originalAuthorName":"王天民3"},{"authorName":"魏龙","id":"efa646d9-5106-4989-822f-0179310fd427","originalAuthorName":"魏龙"}],"categoryName":"|","doi":"10.3724/SP.J.1077.2008.00749","fpage":"749","id":"306dd3cb-4565-467f-97c7-3089ead5d6ca","issue":"4","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"258d48e0-23af-4c8e-86df-7e1582f8ce36","keyword":"CsI薄膜","originalKeyword":"CsI薄膜"},{"id":"065b5431-0f02-4ec0-b204-f830d07e0ab7","keyword":" microstructure","originalKeyword":" microstructure"},{"id":"6fcdf0b8-71e4-42e2-8c30-4d544c59b64d","keyword":" scintillation properties","originalKeyword":" scintillation properties"}],"language":"zh","publisherId":"1000-324X_2008_4_32","title":"退火温度对CsI(Tl)薄膜微观结构和闪烁性能的影响","volume":"23","year":"2008"},{"abstractinfo":"为合成高性能织物涂层剂,以聚四氢呋喃醚、聚乙二醇、端氨基含氟硅油为混合软段,合成了有机硅改性的水性聚氨酯（WFSPU）。用红外光谱、核磁共振谱表征了改性聚氨酯的化学组成;通过纳米粒度测定及Zeta电位分析考察了乳液的稳定性;通过差热扫描量热、正电子湮灭谱及静态拉伸试验分别研究了WFSPU膜的热性能、自由体积空洞及力学性能。研究结果表明,当含氟硅油用量（质量分数）〈10%时,可以制得稳定的乳液,聚氨酯膜的软段玻璃化转变温度约为-78℃。当含氟硅油质量分数为6%时,WFSPU膜的拉伸模量最高,达到47.33 MPa,断裂伸长率为663.49%。","authors":[{"authorName":"雷海波","id":"de38d22a-8f18-4fe2-8374-1b23e0096132","originalAuthorName":"雷海波"},{"authorName":"罗运军","id":"24e3433b-6abc-44a2-8ca2-d9c5e80ccec4","originalAuthorName":"罗运军"},{"authorName":"李晓萌","id":"c13211fd-4064-47c5-8075-acee000cff4d","originalAuthorName":"李晓萌"},{"authorName":"<span style=\"color:red\">王</span>胜鹏","id":"4cbc88b0-a3f7-4358-b2df-09a6f63d0a98","originalAuthorName":"王胜鹏"},{"authorName":"李卓新","id":"7f58d998-1e07-44b2-b894-8a1f87f17980","originalAuthorName":"李卓新"},{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">宝</span><span style=\"color:red\">义</span>","id":"2c01ce5a-72f4-4537-9252-cc334bc091f7","originalAuthorName":"王宝义"}],"doi":"","fpage":"26","id":"47176bc1-28a0-4a03-925e-c971deaa35c4","issue":"4","journal":{"abbrevTitle":"GFZCLKXYGC","coverImgSrc":"journal/img/cover/GFZCLKXYGC.jpg","id":"31","issnPpub":"1000-7555","publisherId":"GFZCLKXYGC","title":"高分子材料科学与工程"},"keywords":[{"id":"a9a31b79-082f-4d14-a827-6ba4ec1d61ad","keyword":"水性聚氨酯","originalKeyword":"水性聚氨酯"},{"id":"6c7f1cad-8c2e-4188-8ee8-4455b908986e","keyword":"氟硅改性","originalKeyword":"氟硅改性"},{"id":"b790ca15-04a1-4e5d-bc53-9e63964ce0b1","keyword":"织物涂层","originalKeyword":"织物涂层"}],"language":"zh","publisherId":"gfzclkxygc201204007","title":"织物涂层用含氟硅油改性聚氨酯水分散体的合成与表征","volume":"28","year":"2012"},{"abstractinfo":"用分子动力学方法,采用Finnis-Sinclair类型的多体势,对TiAl中小尺寸空位团(N0=2,3,4)的各种可能构形进行了模拟计算,计算了空位团的形成能、结合能,分析讨论了空位团最稳定的构形,在此基础上,研究了空位团对单空位迁移的影响.计算结果表明:在TiAl合金中,组成空位团的每个空位都尽可能地与其它空位保持最近邻关系,空位团附近有反位原子.当空位团较大时,空位团周围的原子会向空位中心塌陷,类似于空位团中包含有间隙原子.已有的空位团可作为空位的凝聚中心具有捕获或吸收附近空位的能力.","authors":[{"authorName":"<span style=\"color:red\">王</span>天民","id":"b9f5a190-734d-4c1f-946a-29f9b94a98ca","originalAuthorName":"王天民"},{"authorName":"<span style=\"color:red\">王</span>文军","id":"c0a2c819-1696-4fb8-985d-b1db33248ac6","originalAuthorName":"王文军"},{"authorName":"张洪涛","id":"19787559-f86f-4431-93a4-592618052f8a","originalAuthorName":"张洪涛"},{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">宝</span><span style=\"color:red\">义</span>","id":"f226a0df-2569-4c59-ac5a-7d38b4f8aefc","originalAuthorName":"王宝义"}],"doi":"","fpage":"326","id":"5145fbff-2178-4d3b-9fdb-01d09354a625","issue":"5","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"9c8922b4-b484-4c57-b3a0-a69b651771c1","keyword":"计算机模拟","originalKeyword":"计算机模拟"},{"id":"5e418c65-1b82-493b-bb62-e398dd7241fd","keyword":"金属间化合物","originalKeyword":"金属间化合物"},{"id":"9b27b31c-7884-4e21-b773-cba0f58dac23","keyword":"钛铝合金","originalKeyword":"钛铝合金"},{"id":"d46773d1-45fc-4cf2-b727-f16a9069a041","keyword":"空位","originalKeyword":"空位"},{"id":"86c73e75-6bb5-4dc4-81ce-a3b7a57bf469","keyword":"空位团","originalKeyword":"空位团"},{"id":"04f32036-1b3c-470c-9f3a-b214a0fa3145","keyword":"迁移","originalKeyword":"迁移"}],"language":"zh","publisherId":"xyjsclygc200105002","title":"TiAl中空位团的稳定构形及其对附近空位迁移行为的影响","volume":"30","year":"2001"},{"abstractinfo":"采用正电子湮没寿命和多普勒展宽谱探讨了含铜超低碳微合金钢在连续冷却过程中,微量元素铜对其缺陷的影响.结果表明:从1 150℃以5℃/s冷速到850℃的过程中,超低碳微合金钢中的主要缺陷为单空位和位错;铜元素不仅显著影响了微合金钢中缺陷数量随温度的变化规律,并且降低了单空位和位错缺陷的总数量;不含铜微合金钢中缺陷数量随温度的降低先增大再减小,且在1 000℃时达到最大值;含铜微合金钢中缺陷数量随温度的降低基本保持不变.","authors":[{"authorName":"杨锐杰","id":"bc306f95-86e2-4f3c-910a-ac190783dc26","originalAuthorName":"杨锐杰"},{"authorName":"吴平","id":"06d20033-7b67-4d28-94bd-f1f81a0f476f","originalAuthorName":"吴平"},{"authorName":"李向龙","id":"acf99bc2-ec58-4922-b9f8-020b9aab17c4","originalAuthorName":"李向龙"},{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">宝</span><span style=\"color:red\">义</span>","id":"11395dde-5027-4d77-9f2b-2976a13f3153","originalAuthorName":"王宝义"},{"authorName":"张师平","id":"61db33e6-fd9b-48c9-850e-b006a8f79736","originalAuthorName":"张师平"},{"authorName":"陈森","id":"9d27d0ba-7265-45b8-8e20-081031610ce5","originalAuthorName":"陈森"}],"doi":"10.13228/j.boyuan.issn1001-0777.20130134","fpage":"56","id":"530443ce-dc69-4eb5-8ab9-51221d068c61","issue":"1","journal":{"abbrevTitle":"WLCS","coverImgSrc":"journal/img/cover/WLCS.jpg","id":"64","issnPpub":"1001-0777","publisherId":"WLCS","title":"物理测试"},"keywords":[{"id":"b9ed6abe-2d95-4a8e-9d5f-664628704668","keyword":"微合金钢","originalKeyword":"微合金钢"},{"id":"79661315-98c2-476d-8e50-6062ff3c4f47","keyword":"位错","originalKeyword":"位错"},{"id":"b493d0df-258e-42b3-a328-d6cb4decb73a","keyword":"单空位","originalKeyword":"单空位"},{"id":"5c13af2c-3888-4fe1-be0a-362b28798636","keyword":"缺陷浓度","originalKeyword":"缺陷浓度"},{"id":"4ffc9097-5652-49c8-8f17-9b9d563f2a2f","keyword":"自由电子密度","originalKeyword":"自由电子密度"}],"language":"zh","publisherId":"wlcs201501015","title":"正电子湮没技术探讨铜对微合金钢缺陷的影响","volume":"33","year":"2015"}],"totalpage":16,"totalrecord":155}