{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"采用溶剂蒸发法生长出透明的带隙宽度为2.96 eV的γ-CuI晶体.在紫外光激发下,该晶体在410、430 nm处分别呈现有近带边发射峰,另在720 nm附近还出现一个与样品碘缺陷有关的宽发射带.经碘退火后,样品720 nm发射带被基本抑制,而在420 nm处出现了一个更强的近带边发射峰.使用扫描相机分别测量了γ-CuI晶体各发射峰(带)的<span style=\"color:red\">衰减</span><span style=\"color:red\">时间</span>谱,其中近带边发射峰的发光<span style=\"color:red\">衰减</span><span style=\"color:red\">时间</span>常数均在数十皮秒量级,表明γ-CuI晶体具有极快的<span style=\"color:red\">时间</span>响应特性;而720 nm发射带的发光<span style=\"color:red\">衰减</span><span style=\"color:red\">时间</span>常数主要在数十纳秒量级.X射线激发下,γ-CuI晶体具有435 nm近带边发射峰和680 nm发射带,其近带边发射对X射线能量响应的测量结果表明,当Ex＜49.1 keV时,γ-CuI晶体闪烁光快分量对X射线的探测效率相对较高.","authors":[{"authorName":"李锋锐","id":"177089af-e760-47e1-b71c-87b598524463","originalAuthorName":"李锋锐"},{"authorName":"顾牡","id":"bfb8e2ee-382a-452f-9886-15a9b75cefc6","originalAuthorName":"顾牡"},{"authorName":"何徽","id":"4175380b-3956-4aaa-aec5-2c139855ba71","originalAuthorName":"何徽"},{"authorName":"畅里华","id":"fe7de018-ad20-4a84-8de1-33543c31c80d","originalAuthorName":"畅里华"},{"authorName":"温伟峰","id":"02ee75aa-b7c0-44c5-bc89-d255d92963e1","originalAuthorName":"温伟峰"},{"authorName":"李泽仁","id":"17b26e0e-ed16-4a0c-91c7-693360e6f226","originalAuthorName":"李泽仁"},{"authorName":"陈亮","id":"3f3ab5a9-ad71-481c-9f08-1cefefcc5cfd","originalAuthorName":"陈亮"},{"authorName":"刘金良","id":"ba58a858-622b-4050-9fb1-9e588ffeac87","originalAuthorName":"刘金良"},{"authorName":"欧阳晓平","id":"68310c78-1cde-4056-a3b1-70295715049a","originalAuthorName":"欧阳晓平"},{"authorName":"刘小林","id":"0cf048b3-9444-4937-831d-261aa45446ea","originalAuthorName":"刘小林"},{"authorName":"刘波","id":"9d6f963a-e0aa-45ba-b7c1-94679cd20f52","originalAuthorName":"刘波"},{"authorName":"黄世明","id":"733f84d6-7f88-417f-a280-ffdaa0301139","originalAuthorName":"黄世明"},{"authorName":"倪晨","id":"5fc59359-3b06-4573-aac3-7c6e80be5780","originalAuthorName":"倪晨"}],"doi":"10.15541/jim20160262","fpage":"163","id":"9e27b69a-8f9d-4d28-9af1-cd4f74a68329","issue":"2","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"a19e8bba-d48d-4665-bcb3-4b76af34344d","keyword":"γ-CuI晶体","originalKeyword":"γ-CuI晶体"},{"id":"821d2eef-5738-449f-be94-03ec8856a7b4","keyword":"超快闪烁体","originalKeyword":"超快闪烁体"},{"id":"80485af4-9d08-4890-be8f-fa3fe7a78364","keyword":"<span style=\"color:red\">衰减</span><span style=\"color:red\">时间</span>","originalKeyword":"衰减时间"},{"id":"ab84476d-cf8b-4288-b152-e421fa70e394","keyword":"能量响应","originalKeyword":"能量响应"}],"language":"zh","publisherId":"wjclxb201702008","title":"γ-CuI晶体的发光<span style=\"color:red\">衰减</span><span style=\"color:red\">时间</span>和对X射线的能量响应","volume":"32","year":"2017"},{"abstractinfo":"纯碘化铯晶体是一种具有快<span style=\"color:red\">衰减</span>闪烁特性的新型辐射探测材料,在伽马射线、中子和其它辐射探测技术中有重要的应用前景.本研究以Bridgman法所生长的纯碘化铯为对象,分别研究了该晶体的透射光谱以及在紫外光、连续X射线、脉冲X射线和宇宙射线激发下的发射光谱、<span style=\"color:red\">时间</span>响应特性和沿晶体生长方向不同部位的光输出分布特点.实验测得晶体的吸收边为240 nm,激发和发射波长分别位于241 nm和318 nm,发光<span style=\"color:red\">衰减</span><span style=\"color:red\">时间</span>分别为2～3 ns和18～25 ns.以尺寸为30 mm×30 mm×200mm的晶体籽晶端和尾端与PMT耦合所测得的光输出分别是143 p.e/MeV和127 p.e./MeV,尽管晶体两端的光输出存在12.6％的差异,但没有观察到<span style=\"color:red\">衰减</span><span style=\"color:red\">时间</span>长于100 ns的慢分量.这些性能进一步证明纯碘化铯晶体具有作为快闪烁体的优势.","authors":[{"authorName":"任国浩","id":"153c474e-1f39-4e99-a131-bb068a67c647","originalAuthorName":"任国浩"},{"authorName":"宋朝晖","id":"125c9862-24e4-488a-bac2-9ada1f917da2","originalAuthorName":"宋朝晖"},{"authorName":"张子川","id":"f0cf920d-a67e-4529-8df1-2e908b0bf568","originalAuthorName":"张子川"},{"authorName":"张侃","id":"d96617f0-9565-4667-b9c9-c73405119e45","originalAuthorName":"张侃"},{"authorName":"杨帆","id":"e3d5ebdd-e466-4614-988f-53338fd3476c","originalAuthorName":"杨帆"},{"authorName":"李焕英","id":"56e26a74-a032-4659-aaab-0a4c3b223ff9","originalAuthorName":"李焕英"},{"authorName":"陈晓峰","id":"94c23460-2c9b-4d94-be16-829afc86d981","originalAuthorName":"陈晓峰"}],"doi":"10.15541/jim20160304","fpage":"169","id":"ebd47c6f-4300-4ba1-b54c-91e2ca03ae57","issue":"2","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"721c5a4c-fbb8-4c47-a235-8b49f647f309","keyword":"纯碘化铯","originalKeyword":"纯碘化铯"},{"id":"30e445ec-4662-4a59-8916-cb8a1ec1ac10","keyword":"晶体","originalKeyword":"晶体"},{"id":"49b6e993-2777-4992-91c9-636ae0425b34","keyword":"透光性","originalKeyword":"透光性"},{"id":"d9742a25-c45d-4156-9e8d-8816cf906dc8","keyword":"发光","originalKeyword":"发光"},{"id":"fe12fc23-5765-469c-8292-dc8fab769666","keyword":"<span style=\"color:red\">衰减</span><span style=\"color:red\">时间</span>","originalKeyword":"衰减时间"},{"id":"ecdd9cf2-11b5-4265-8643-3ce0c9265b88","keyword":"光输出","originalKeyword":"光输出"}],"language":"zh","publisherId":"wjclxb201702009","title":"纯碘化铯(CsI)晶体的发光与光<span style=\"color:red\">衰减</span>特性研究","volume":"32","year":"2017"},{"abstractinfo":"研究了80～500 K范围内,光激发下Li6Gd(BO3)3∶Ce晶体发光和<span style=\"color:red\">衰减</span>的温度依赖特性.在346nm光激发下,热猝灭占优势,发光随温度升高而降低.在274nm光激发下,发光由Gd3+向Ce3+的能量传递和热猝灭共同决定:低于200K时,能量传递占支配地位,发光随温度升高而增强;高于200K时,热猝灭占优势,发光随温度升高而减弱.225K以下,辐射跃迁占优势,<span style=\"color:red\">衰减</span>随温度升高而略有增大;225K以上,无辐射跃迁占优势,<span style=\"color:red\">衰减</span>随温度升高而减小.利用经典的热猝灭公式和Arrhenius公式,获取的激活能分别为0.33和0.32eV.","authors":[{"authorName":"陈俊锋","id":"8cdc9c49-9150-4634-9a55-328781681263","originalAuthorName":"陈俊锋"},{"authorName":"李赟","id":"95d88482-a785-425f-aaf8-075b397e61ba","originalAuthorName":"李赟"},{"authorName":"宋桂兰","id":"eda0960e-8648-4167-b9ee-5c0336baa3dd","originalAuthorName":"宋桂兰"},{"authorName":"姚冬敏","id":"9b672efe-40a7-4ef8-8a5b-fc0c6cfb91d2","originalAuthorName":"姚冬敏"},{"authorName":"袁兰英","id":"003d05ee-636c-4522-bae0-e142fda3126b","originalAuthorName":"袁兰英"},{"authorName":"齐雪君","id":"7975e76c-1e1f-4506-9a01-58f1c1156b1c","originalAuthorName":"齐雪君"},{"authorName":"王绍华","id":"6cfd47a1-24b8-441c-ad2f-153d82055118","originalAuthorName":"王绍华"}],"doi":"10.3321/j.issn:1000-324X.2007.01.005","fpage":"25","id":"4955f2e2-2e57-4c88-a74b-b68faa8d9c97","issue":"1","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"a1268245-71e4-4d8a-a68c-02321d2fa539","keyword":"发光","originalKeyword":"发光"},{"id":"a85ab123-8ff5-4d97-9507-efd4db281825","keyword":"<span style=\"color:red\">衰减</span><span style=\"color:red\">时间</span>","originalKeyword":"衰减时间"},{"id":"f5e54004-13c4-427e-b8b0-9fcce026fc9d","keyword":"Li6Gd(BO3)3∶Ce","originalKeyword":"Li6Gd(BO3)3∶Ce"},{"id":"d55fde51-20a9-47be-8571-ec04a1223ac0","keyword":"温度依赖","originalKeyword":"温度依赖"}],"language":"zh","publisherId":"wjclxb200701005","title":"光激发下Li6Gd(BO3)3:Ce晶体发光和<span style=\"color:red\">衰减</span>的温度依赖特性","volume":"22","year":"2007"},{"abstractinfo":"制备了CIIR/ACM/PZT/CB复合材料,通过测试该材料的振动<span style=\"color:red\">衰减</span><span style=\"color:red\">时间</span>对其阻尼性能进行了表征,并探讨了材料不同的电阻与其阻尼性能的关系.结果表明,当材料电阻率在102.5 Ω·cm～109.5 Ω·cm,且压电陶瓷含量在30%～40%时,该复合材料具有优良的阻尼减振性能.","authors":[{"authorName":"王晏研","id":"ff8d129e-b8a5-429d-a38d-b82cb90dd009","originalAuthorName":"王晏研"},{"authorName":"陈喜荣","id":"993a743d-a7ff-4cd2-91d4-46aaa407b296","originalAuthorName":"陈喜荣"},{"authorName":"黄光速","id":"49c4215f-29a6-491c-b117-75248099eb9b","originalAuthorName":"黄光速"},{"authorName":"潘启英","id":"8fa26d5a-26e8-4638-9f84-b88d05a04624","originalAuthorName":"潘启英"},{"authorName":"吴锦荣","id":"7c9a56b2-4239-4cbe-8ff3-d19da91a717d","originalAuthorName":"吴锦荣"}],"doi":"","fpage":"246","id":"10ef38f3-dcfc-41d4-8de3-d52d53fa199b","issue":"3","journal":{"abbrevTitle":"GFZCLKXYGC","coverImgSrc":"journal/img/cover/GFZCLKXYGC.jpg","id":"31","issnPpub":"1000-7555","publisherId":"GFZCLKXYGC","title":"高分子材料科学与工程"},"keywords":[{"id":"fc4bcd9d-08de-426a-9424-08e75dee9bc2","keyword":"阻尼","originalKeyword":"阻尼"},{"id":"b4574933-bba8-4a3d-afe6-baedaeb8178a","keyword":"压电陶瓷","originalKeyword":"压电陶瓷"},{"id":"4d26699c-8387-44c0-9576-9c41589cc207","keyword":"炭黑","originalKeyword":"炭黑"},{"id":"333229c9-d169-427b-8c26-2107e6be7483","keyword":"<span style=\"color:red\">衰减</span><span style=\"color:red\">时间</span>","originalKeyword":"衰减时间"}],"language":"zh","publisherId":"gfzclkxygc200503062","title":"CIIR/ACM/PZT/CB复合材料的阻尼性能","volume":"21","year":"2005"},{"abstractinfo":"以高温固相反应合成CdWO4多晶为原料,采用垂直坩埚下降法生长出大尺寸完整CdWO4晶体,就所生长CdWO4晶体进行了闪烁发光性能的测试表征,包括紫外可见透射光谱、光致发光光谱、光致发射<span style=\"color:red\">衰减</span><span style=\"color:red\">时间</span>、X射线激发发射光谱、相对光产额以及γ射线辐照硬度.结果表明,该单晶在可见光区具有良好的光学透过性,其光致发光与X射线激发发射光的峰值波长位于475 nm左右,其光致发射<span style=\"color:red\">衰减</span><span style=\"color:red\">时间</span>为842 ns；以CsI∶Tl晶体为基准样品,测得γ射线激发发光的光产额相当于基准样品的51.5％～57.4％,在γ射线辐照条件下其辐照硬度达107 rad.","authors":[{"authorName":"沈琦","id":"fdf70d60-361b-4576-b766-3b314784214a","originalAuthorName":"沈琦"},{"authorName":"陈红兵","id":"65b7862b-fd3d-40f5-a6f3-6837c225ab30","originalAuthorName":"陈红兵"},{"authorName":"王金浩","id":"e891aaee-0476-40c0-a132-c815cf58cd31","originalAuthorName":"王金浩"},{"authorName":"蒋成勇","id":"97e4ff70-c1c3-4bd6-852b-914d38951afc","originalAuthorName":"蒋成勇"},{"authorName":"潘建国","id":"a28567c0-b606-4ae4-8976-ef8883ecca54","originalAuthorName":"潘建国"},{"authorName":"徐军","id":"f207f2ba-4afe-4c84-895d-ea3fc3b064e7","originalAuthorName":"徐军"}],"doi":"","fpage":"844","id":"f4bf9275-d06b-4925-8385-e19d11329f8b","issue":"4","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"2ae8c356-445b-4579-90ea-efa2dcdcc8cc","keyword":"钨酸镉","originalKeyword":"钨酸镉"},{"id":"fa242bad-181a-4a18-b6cd-c4aa7c53d416","keyword":"坩埚下降法","originalKeyword":"坩埚下降法"},{"id":"cc3889cc-948b-4e9f-a7b2-58aa21d29eab","keyword":"<span style=\"color:red\">衰减</span><span style=\"color:red\">时间</span>","originalKeyword":"衰减时间"},{"id":"46dbc6c9-4824-4ae8-85b7-0f9d685966e3","keyword":"辐照硬度","originalKeyword":"辐照硬度"}],"language":"zh","publisherId":"rgjtxb98201204004","title":"坩埚下降法生长钨酸镉晶体的闪烁性能","volume":"41","year":"2012"},{"abstractinfo":"本文采用改进的Bridman法,以优化的工艺成功地定向生长出了φ50mm×50 mm的溴(氯)化镧(铈)晶体,即掺氯化铈的溴化镧晶体,简称LBC晶体,测量了样品的光输出、能量分辨率、闪烁<span style=\"color:red\">时间</span>特性等性能指标.结果表明,坩埚下降法定向生长φ50 mm的LBC晶体具有优异的闪烁性能,其能量分辨率为3.1％,光输出相当于NaI∶Tl晶体的156％,<span style=\"color:red\">衰减</span><span style=\"color:red\">时间</span>为17ns.","authors":[{"authorName":"桂强","id":"178bdb7d-a262-42a3-a62d-92e63f0d5ce7","originalAuthorName":"桂强"},{"authorName":"张春生","id":"1a4bd7a9-d11f-4005-b6b6-a6fe1e7e0afe","originalAuthorName":"张春生"},{"authorName":"邹本飞","id":"6ed15556-abe5-4780-ac69-fd56453d84dd","originalAuthorName":"邹本飞"},{"authorName":"张明荣","id":"baf69a98-5cda-4c9e-a564-7ae7618cd269","originalAuthorName":"张明荣"}],"doi":"","fpage":"616","id":"5a264735-57d0-4a93-89ab-813515d7747a","issue":"4","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"9845c54e-a90a-4f57-9970-dac430ac1098","keyword":"溴化镧晶体","originalKeyword":"溴化镧晶体"},{"id":"e8793888-c5e8-4463-ae9f-93b8e2596085","keyword":"坩埚下降法","originalKeyword":"坩埚下降法"},{"id":"07877b4a-7ba5-437e-819f-5ac539abd234","keyword":"能量分辨率","originalKeyword":"能量分辨率"},{"id":"82434b1e-3633-45a3-9b13-c36804f0b8ad","keyword":"<span style=\"color:red\">衰减</span><span style=\"color:red\">时间</span>","originalKeyword":"衰减时间"}],"language":"zh","publisherId":"rgjtxb98201304014","title":"直径2英寸氯化铈掺杂溴化镧晶体制备与闪烁性能研究","volume":"42","year":"2013"},{"abstractinfo":"采用共沉淀工艺合成了Yb3+离子和Ho3+离子共掺杂的Lu2O3纳米粉体,研究了粉体的斯托克斯(Stokes)和反斯托克斯(Anti-Stokes)发光特性以及煅烧温度对粉体发光性能的影响.在氙灯447.5nm和半导体激光器980nm激发下样品均发射出明亮的绿光,观察到了不同Ho3+离子浓度掺杂的纳米粉体的浓度淬灭现象.发射强度与激发功率的关系表明Anti-Stokes发光是双光子过程,能量转移是主要的上转换机制.Ho3+离子的5F4,5S2能级在不同波长激发下的<span style=\"color:red\">衰减</span><span style=\"color:red\">时间</span>也证实了浓度淬灭及能量转移现象.","authors":[{"authorName":"安丽琼","id":"b6dfe4e8-b6f8-48cc-8d8e-79e79100db64","originalAuthorName":"安丽琼"},{"authorName":"章健","id":"b4fb0005-f29a-453a-a91d-fe97ce758cc5","originalAuthorName":"章健"},{"authorName":"刘敏","id":"95174a9f-dbc9-472f-b44f-605888b8c866","originalAuthorName":"刘敏"},{"authorName":"王士维","id":"8a9b8dc4-8777-4ff5-94ff-58671d43e169","originalAuthorName":"王士维"}],"doi":"10.3321/j.issn:1000-324X.2008.02.037","fpage":"383","id":"1a4fe9a5-0efc-4d8b-90c7-db86fbfa2dc0","issue":"2","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"b99ddee3-930f-44aa-809c-da07952ad43e","keyword":"氧化镥纳米粉体","originalKeyword":"氧化镥纳米粉体"},{"id":"8c108d7d-06ad-4d49-babb-3ba1997f2c47","keyword":"Anti-Stokes发光","originalKeyword":"Anti-Stokes发光"},{"id":"88df99df-afd1-4e96-977c-27a6980719fc","keyword":"<span style=\"color:red\">衰减</span><span style=\"color:red\">时间</span>","originalKeyword":"衰减时间"},{"id":"9525cd53-8f90-4dab-a31e-ebc4c330ec06","keyword":"Stokes发光","originalKeyword":"Stokes发光"}],"language":"zh","publisherId":"wjclxb200802037","title":"Lu2O3:Yb3+,Ho3+纳米粉体的发光性能研究","volume":"23","year":"2008"},{"abstractinfo":"针对Ce:Li6Lu(BO3)3晶体有效原子序数(zeff)高的问题,采用低原子序数的Y3+离子部分置换晶体中的Lu3+离子.通过固相合成法制备了Ce:Li6Lu1-xYx(BO3)3(0≤x≤1)固溶体.X射线粉末衍射(XRD)分析表明,该系列固溶体结构与Li6Gd(BO3)3晶体相同,空间群为P21/c.其X射线激发发射(XSL)的发光强度随着Y3+的含量增加而降低,当x=0.5时,固溶体的有效原子序数与Li6Gd(BO3)3闪烁体相当,但XSL发光强度是其1.4倍.Ce:Li6Lu0.5Y0.5(BO3)3的XSL光谱和PL光谱都在400 nm附近出现Ce3+离子的特征峰,可拟合出361和419 nm两个发光分量,分别对应于Ce3+离子的激发态电子的5d1→2F5/2和5d1→2F7/2能级跃迁.Ce:Li6Lu0.5Y0.5(BO3)3固溶体的<span style=\"color:red\">衰减</span><span style=\"color:red\">时间</span>比Ce:Li6Lu(BO3)3略长,为19.6 ns.当x=0.50～0.70时,Ce:Li6Lu1-xYx(BO3)3(0≤x≤1)闪烁体比较适合作为中子探测材料.","authors":[{"authorName":"孙丹丹","id":"89dc6391-a3a5-4f9c-ac95-a8003190ac87","originalAuthorName":"孙丹丹"},{"authorName":"潘尚可","id":"8ed1a58d-679e-4585-9aa8-01a03fe1da55","originalAuthorName":"潘尚可"},{"authorName":"任国浩","id":"2a76c018-cfaa-4c8f-9d35-58680843fac5","originalAuthorName":"任国浩"},{"authorName":"吴云涛","id":"20e07c7a-c062-446f-ae53-3632e36fad05","originalAuthorName":"吴云涛"},{"authorName":"商珊珊","id":"83bb22ca-81f2-4cb5-9d24-5c731e814442","originalAuthorName":"商珊珊"},{"authorName":"张国庆","id":"b6f5777e-36e2-473a-bacf-f950a8aa920f","originalAuthorName":"张国庆"}],"doi":"10.3724/SP.J.1077.2013.12735","fpage":"987","id":"84f3ba15-d27d-425b-bcc3-fea56eb03abe","issue":"9","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"46472abc-9677-4bb8-8aa5-76f791899511","keyword":"固相合成","originalKeyword":"固相合成"},{"id":"6860ef29-f3cd-47ed-874f-fd2d24b66f20","keyword":"Ce∶Li6LU1-xYx(BO3)3","originalKeyword":"Ce∶Li6LU1-xYx(BO3)3"},{"id":"2467208f-72a9-4910-a735-46131391d37e","keyword":"X射线激发发射谱","originalKeyword":"X射线激发发射谱"},{"id":"db9427c9-c69e-41b0-8f50-ccc16ff25756","keyword":"PL光谱","originalKeyword":"PL光谱"},{"id":"c694cf5b-f9ed-46a7-8762-5150072fb696","keyword":"<span style=\"color:red\">衰减</span><span style=\"color:red\">时间</span>","originalKeyword":"衰减时间"}],"language":"zh","publisherId":"wjclxb201309015","title":"Y3+掺杂Ce∶Li6Lu(BO3)3闪烁体的发光性能研究","volume":"28","year":"2013"},{"abstractinfo":"本文实验研究了励磁线圈使用YBCO超导带材绕制,并通过超导开关形成闭合回路的高温超导电磁铁两级中心磁场的<span style=\"color:red\">衰减</span>特性.通过测量电磁铁两级中心的磁场,观察改变励磁电流和两极间隙引起的磁场<span style=\"color:red\">衰减</span><span style=\"color:red\">时间</span>常数的变化情况.实验发现:电流值的变化对中心磁场<span style=\"color:red\">衰减</span><span style=\"color:red\">时间</span>常数影响较小,间隙对<span style=\"color:red\">时间</span>常数的影响较大.","authors":[{"authorName":"王任波","id":"45b2d9c5-2797-45c8-96cf-980ba002faa1","originalAuthorName":"王任波"},{"authorName":"陈鑫","id":"a236d66e-031d-428c-a72c-884e92afde35","originalAuthorName":"陈鑫"},{"authorName":"勾艳凤","id":"e360bea1-82c1-42f0-bae4-ac69558b67a8","originalAuthorName":"勾艳凤"}],"doi":"","fpage":"294","id":"4b7153ba-e7e5-4a23-bacc-449d7b66ef2a","issue":"4","journal":{"abbrevTitle":"DWWLXB","coverImgSrc":"journal/img/cover/DWWLXB.jpg","id":"19","issnPpub":"1000-3258","publisherId":"DWWLXB","title":"低温物理学报   "},"keywords":[{"id":"2ceac216-f792-4056-8db6-585734b7357c","keyword":"高温超导电磁铁","originalKeyword":"高温超导电磁铁"},{"id":"9d86244e-fb22-434b-a257-e3b51260d0b6","keyword":"<span style=\"color:red\">时间</span>常数","originalKeyword":"时间常数"},{"id":"fa9f71a2-3b1a-4aa0-b0af-299f48b6f532","keyword":"YBCO带材","originalKeyword":"YBCO带材"},{"id":"ee6d6b3c-e5d4-434b-a61e-2dcb96058a1d","keyword":"超导开关","originalKeyword":"超导开关"}],"language":"zh","publisherId":"dwwlxb201404009","title":"高温超导电磁铁磁场<span style=\"color:red\">衰减</span><span style=\"color:red\">时间</span>常数特性研究","volume":"36","year":"2014"},{"abstractinfo":"本文采用PECVD方法在石英衬底上生长不同剂量比的氮化硅薄膜SiNx,并利用离子注入方法在SiN2中注入Tb3+离子.然后通过在SiNx薄膜表面沉积银岛膜,研究了银表面等离激元和SiNx:Tb3+发光的相互作用.研究发现,银岛膜的存在降低了SiNx:Tb3+发光荧光寿命,而且SiNx:Tb3+发光荧光寿命随着银岛膜厚度的增加而减小.而氮化硅薄膜中的硅纳米晶也会影响Tb3+的光模密度,并对SiNx:Tb3+发光荧光寿命产生影响.","authors":[{"authorName":"任常瑞","id":"fa777122-d5ff-49da-8210-34ce0c87a880","originalAuthorName":"任常瑞"},{"authorName":"胡翔","id":"9526a96f-0b93-4ce1-a71b-0fd3c5f77f95","originalAuthorName":"胡翔"},{"authorName":"李东升","id":"e2c0cbc5-d5db-4414-b465-a0642db9d01e","originalAuthorName":"李东升"},{"authorName":"杨德仁","id":"59eb55d3-7338-47a2-9ce2-ccc9929786d7","originalAuthorName":"杨德仁"}],"doi":"","fpage":"139","id":"e5a14e3c-98d9-4526-9e28-47cdbb78ea36","issue":"1","journal":{"abbrevTitle":"CLKXYGCXB","coverImgSrc":"journal/img/cover/CLKXYGCXB.jpg","id":"13","issnPpub":"1673-2812","publisherId":"CLKXYGCXB","title":"材料科学与工程学报"},"keywords":[{"id":"f978ae10-d824-40da-b698-710ed8d0e207","keyword":"SiNx:Tb3+薄膜","originalKeyword":"SiNx:Tb3+薄膜"},{"id":"aaf3bbfa-317b-40a6-9a16-58547cb46bd3","keyword":"银岛膜","originalKeyword":"银岛膜"},{"id":"17a4b74b-bf0a-4047-b3e4-0a23d2b2784a","keyword":"<span style=\"color:red\">衰减</span><span style=\"color:red\">时间</span>","originalKeyword":"衰减时间"},{"id":"244f89aa-48a2-47f1-b51b-250fe54081ce","keyword":"表面等离激元","originalKeyword":"表面等离激元"}],"language":"zh","publisherId":"clkxygc200901035","title":"SiNx:Tb3+薄膜中Tb3+与银表面等离激元耦合","volume":"27","year":"2009"}],"totalpage":2577,"totalrecord":25761}