{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"以陶瓷抛光砖粉为混凝土掺合料,采用膨胀珍珠岩作活性集料,测试陶瓷抛光砖粉对碱集料反应的影响；利用电通量法测定标准养护28 d混凝土的电通量值,采用硝酸银显色法分别测定标准养护28 d水泥胶砂经10次、20次干湿循环后氯离子渗透深度,通过压汞法、SEM等测试手段分析掺陶瓷抛光砖粉水泥硬化浆体的显微结构,研究陶瓷抛光砖粉作掺合料对混凝土抗氯离子渗透性能的影响,并将之与粉煤灰对比.结果表明:混凝土电通量测试结果与水泥胶砂硝酸银显色法的测试结果之间具有较好相关性.陶瓷抛光砖粉作混凝土掺合料,能发挥其二次水化作用及对水泥硬化浆体孔结构的细化作用,增强混凝土抗氯离子渗透能力,抑制碱骨料反应.在相同掺量条件下,单掺抛光砖粉混凝土抗氯离子渗透能力优于掺试验用Ⅱ级粉煤灰混凝土.与单掺抛光砖粉相比,复掺抛光砖粉与粉煤灰,其后期抗氯离子能力较强.抛光砖粉与矿渣复掺效果优于抛光粉与粉煤灰复掺；随矿渣掺量的增加,混凝土抗氯离子渗透能力增加.","authors":[{"authorName":"王功勋","id":"30ff26ee-3d26-4b1e-8775-88a55bb4ae93","originalAuthorName":"王功勋"},{"authorName":"谭琳","id":"fd535dc0-6e94-4369-a4d4-21fb34b7b3a3","originalAuthorName":"谭琳"},{"authorName":"<span style=\"color:red\">聂</span><span style=\"color:red\">忆</span><span style=\"color:red\">华</span>","id":"89ab1499-3de7-423f-8f5d-c29bf6365df0","originalAuthorName":"聂忆华"},{"authorName":"田苾","id":"cea58019-cf56-41ab-99c7-648c6adf7af2","originalAuthorName":"田苾"}],"doi":"","fpage":"1564","id":"4eb3a120-6161-4bf2-b003-93a7b26336a9","issue":"6","journal":{"abbrevTitle":"GSYTB","coverImgSrc":"journal/img/cover/GSYTB.jpg","id":"36","issnPpub":"1001-1625","publisherId":"GSYTB","title":"硅酸盐通报   "},"keywords":[{"id":"fc06bf52-2e76-4f9c-9ad2-efc6d3f4c875","keyword":"陶瓷抛光砖粉","originalKeyword":"陶瓷抛光砖粉"},{"id":"7552717a-90ee-4252-8732-6801ee885011","keyword":"掺合料","originalKeyword":"掺合料"},{"id":"93dcce6e-715d-4c8b-853b-6813907dc195","keyword":"硝酸银显色法","originalKeyword":"硝酸银显色法"},{"id":"66d70812-32ca-408a-86c5-76371386aee8","keyword":"电通量法","originalKeyword":"电通量法"},{"id":"6612bfe2-37cb-4705-a2e8-4909bbbf3712","keyword":"抗氯离子渗透","originalKeyword":"抗氯离子渗透"}],"language":"zh","publisherId":"gsytb201206045","title":"陶瓷抛光砖粉对混凝土抗氯离子渗透性能的影响","volume":"31","year":"2012"},{"abstractinfo":"以陶瓷抛光砖粉为辅助胶凝材料,通过单掺及复掺陶瓷抛光砖粉和聚丙烯纤维,研究了不同掺量的聚丙烯纤维及陶瓷抛光砖粉对砂浆稠度、抗压强度、抗折强度、干缩率和抗冻性的影响.研究结果表明:在单掺条件下,随陶瓷抛光砖粉掺量的增加,砂浆稠度变大;随聚丙烯纤维掺量的增加,砂浆稠度变小.在复掺条件下,当聚丙烯纤维掺量达到1.5 kg/m3时,纤维掺入所导致的粘聚性增大成为主导因素.陶瓷抛光砖粉的掺入能够提高砂浆力学性能,且随其掺量增加,砂浆抗压强度与抗折强度增大;砂浆抗折强度随聚丙烯纤维掺量的增加而增加呈上升趋势,但砂浆抗压强度随纤维掺量的增加呈先降后增趋势.陶瓷抛光砖粉和聚丙烯纤维均能有效抑制砂浆的干缩,降低砂浆经冻融循环后的抗压强度损失率,提高砂浆的抗冻性能.","authors":[{"authorName":"曹聪","id":"d38e507b-7f77-40a5-912a-d167cfc4c094","originalAuthorName":"曹聪"},{"authorName":"王功勋","id":"f7cec222-e515-43a1-8a77-7c6dbc034246","originalAuthorName":"王功勋"},{"authorName":"刘三玲","id":"1dfa9f85-2821-4993-bdd5-133482772793","originalAuthorName":"刘三玲"},{"authorName":"何潇坤","id":"b94226db-1b38-4858-a193-7f53d1afa5e7","originalAuthorName":"何潇坤"},{"authorName":"<span style=\"color:red\">聂</span><span style=\"color:red\">忆</span><span style=\"color:red\">华</span>","id":"536d6b9d-a22f-4b50-830c-cc47441e96cf","originalAuthorName":"聂忆华"}],"doi":"","fpage":"1354","id":"d15b59a4-d858-41bd-9893-bc6bf50d593e","issue":"6","journal":{"abbrevTitle":"GSYTB","coverImgSrc":"journal/img/cover/GSYTB.jpg","id":"36","issnPpub":"1001-1625","publisherId":"GSYTB","title":"硅酸盐通报   "},"keywords":[{"id":"faeee6e8-f3e5-4298-b516-3cfb62745e2c","keyword":"陶瓷抛光砖粉","originalKeyword":"陶瓷抛光砖粉"},{"id":"3cb6a4e6-5da7-4c18-91e9-44707e3f4b98","keyword":"聚丙烯纤维","originalKeyword":"聚丙烯纤维"},{"id":"39adaca1-f97c-48b9-a88a-db010d1151d5","keyword":"砂浆","originalKeyword":"砂浆"},{"id":"b36bc249-dd3d-4247-915b-8403edef2334","keyword":"干缩","originalKeyword":"干缩"},{"id":"369c9835-9cd3-4b7e-a9dd-66e0f1ca89df","keyword":"抗冻性","originalKeyword":"抗冻性"}],"language":"zh","publisherId":"gsytb201406015","title":"复掺陶瓷抛光砖粉与聚丙烯纤维对砂浆性能的影响","volume":"33","year":"2014"},{"abstractinfo":"通过化学结合水量和水化热的测定,研究陶瓷抛光砖粉与水泥熟料的相互作用,并将之与粉煤灰对比.结果表明:陶瓷抛光砖粉的掺入降低了复合胶凝材料的总水化程度,但促进了复合胶凝材料中水泥熟料的水化；以相同掺量取代水泥熟料,掺抛光砖粉可明显促进水化样早期水化,降低水化热,至水化后期这种促进作用有所降低.在最佳掺量约30％的条件下,抛光砖粉对水泥熟料水化反应的促进作用明显,此时熟料水化程度最高,表现为等效结合水量值最大.掺粉煤灰对水化样的早期水化促进作用不明显,但至水化后期会加速水化.粉煤灰掺量越大,粉煤灰自身的反应程度越低,水泥水化的程度越高.","authors":[{"authorName":"王功勋","id":"bd77c1dd-57f1-4671-9898-cce3f15d2d2b","originalAuthorName":"王功勋"},{"authorName":"谭琳","id":"38eb9193-1171-40ef-88af-acc67b512b32","originalAuthorName":"谭琳"},{"authorName":"田苾","id":"9aa7ae8b-6e21-445f-b797-99dd5de7fd7b","originalAuthorName":"田苾"},{"authorName":"<span style=\"color:red\">聂</span><span style=\"color:red\">忆</span><span style=\"color:red\">华</span>","id":"acecd198-0127-4a17-8683-a3fc30d2fba4","originalAuthorName":"聂忆华"}],"doi":"","fpage":"1586","id":"d5bfafd4-abad-48e6-b452-0a2f3a4773de","issue":"6","journal":{"abbrevTitle":"GSYTB","coverImgSrc":"journal/img/cover/GSYTB.jpg","id":"36","issnPpub":"1001-1625","publisherId":"GSYTB","title":"硅酸盐通报   "},"keywords":[{"id":"20d50e06-d919-4774-b55c-2ecbdd34b6d5","keyword":"陶瓷抛光砖粉","originalKeyword":"陶瓷抛光砖粉"},{"id":"b0df2030-2858-4b3f-93ae-d04a9e30764d","keyword":"水化程度","originalKeyword":"水化程度"},{"id":"1430ca89-75f3-4efb-ac8f-2ab83d31f2ba","keyword":"化学结合水","originalKeyword":"化学结合水"},{"id":"caed8396-5e11-46df-b2ee-0bba130ff898","keyword":"粉煤灰","originalKeyword":"粉煤灰"}],"language":"zh","publisherId":"gsytb201206049","title":"陶瓷抛光砖粉与水泥熟料的相互作用","volume":"31","year":"2012"},{"abstractinfo":"<span style=\"color:red\">忆</span>阻器( RRAM)是一种新兴的非挥发性存储器,具有简单的器件结构、较快的操作速度和相对较小的功耗.简述了<span style=\"color:red\">忆</span>阻器的基本原理以及该领域材料方面的最新研究进展,其中重点介绍了HP<span style=\"color:red\">忆</span>阻器模型；综述了基于不同薄膜材料制备的<span style=\"color:red\">忆</span>阻器的特性,如有机材料、固态电解液材料、多元金属氧化物、二元金属氧化物等；阐述了<span style=\"color:red\">忆</span>阻器的重要意义及面临的巨大挑战,提出了未来该领域需要加强研究的若干问题.","authors":[{"authorName":"曲翔","id":"e2ca5470-997e-4de7-b4a3-8d124c1048db","originalAuthorName":"曲翔"},{"authorName":"徐文婷","id":"2fe226cf-bc91-4578-b48c-4b1b178b75f8","originalAuthorName":"徐文婷"},{"authorName":"肖清华","id":"8186f1b7-e8c5-4c24-87b2-b5f33d3039db","originalAuthorName":"肖清华"},{"authorName":"刘斌","id":"2d638735-d943-4b38-8ffa-51741b33d697","originalAuthorName":"刘斌"},{"authorName":"闫志瑞","id":"08c8dba1-8af9-49b0-8fd5-e8befb45d7e4","originalAuthorName":"闫志瑞"},{"authorName":"周旗钢","id":"70af5a53-0ba6-4638-84ab-fa6e06e3f511","originalAuthorName":"周旗钢"}],"doi":"","fpage":"31","id":"90c26d59-ccb1-4644-9a76-78abb52fc4b2","issue":"11","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"2999be0d-1882-443b-bd58-1f7e96e4d3ef","keyword":"<span style=\"color:red\">忆</span>阻器","originalKeyword":"忆阻器"},{"id":"53184434-534a-46ab-a5a3-4503c8a64024","keyword":"薄膜材料","originalKeyword":"薄膜材料"},{"id":"668b1241-c7d6-483f-9209-27e0233665de","keyword":"阻变机制","originalKeyword":"阻变机制"},{"id":"5c7cd6b0-3f1e-4e3f-9986-2b59c89566cc","keyword":"电激励","originalKeyword":"电激励"}],"language":"zh","publisherId":"cldb201211006","title":"<span style=\"color:red\">忆</span>阻器材料的研究进展","volume":"26","year":"2012"},{"abstractinfo":"采用<span style=\"color:red\">忆</span>阻器替换分段线性电阻的方法,在Matsumoto,Chua和Kobayashi (MCK)提出的四阶混沌电路基础上,设计了一个含有<span style=\"color:red\">忆</span>阻器的五阶对称混沌电路,建立了五阶<span style=\"color:red\">忆</span>阻混沌电路的数学模型.采用常规动力学分析方法,分析了五阶<span style=\"color:red\">忆</span>阻混沌电路的平衡点集及其稳定性、Lyapunov指数.采用常规元器件,构建了五阶<span style=\"color:red\">忆</span>阻混沌电路的仿真模型,并进行了电路仿真实验.理论分析和仿真实验结果表明,设计的五阶<span style=\"color:red\">忆</span>阻混沌电路具有丰富的混沌行为,丰富了<span style=\"color:red\">忆</span>阻混沌电路的设计与应用.","authors":[{"authorName":"欧青立","id":"a915da07-838c-4ff4-83ce-4df943d6b57b","originalAuthorName":"欧青立"},{"authorName":"徐林波","id":"d3ac91ab-3480-43ee-90a5-cdf01862407b","originalAuthorName":"徐林波"},{"authorName":"郭子叶","id":"dfbee1a2-c66c-4224-be01-b3e596b60263","originalAuthorName":"郭子叶"},{"authorName":"李娅","id":"01478910-cd00-4930-aea1-ea8f59acf0ca","originalAuthorName":"李娅"}],"doi":"10.3969/j.issn.1007-5461.2016.01.008","fpage":"56","id":"af0f7855-7e3e-4c6f-8c27-ff680569ae7e","issue":"1","journal":{"abbrevTitle":"LZ","coverImgSrc":"journal/img/cover/LZ.jpg","id":"52","issnPpub":"1005-4006","publisherId":"LZ","title":"连铸"},"keywords":[{"id":"9e0523be-9680-4dd7-a59d-4704d4637b68","keyword":"非线性光学","originalKeyword":"非线性光学"},{"id":"61945bd0-af40-47bf-98d2-387b339d3841","keyword":"五阶<span style=\"color:red\">忆</span>阻混沌","originalKeyword":"五阶忆阻混沌"},{"id":"64444706-14f3-48fe-b2e6-526c1fdc359c","keyword":"动力学分析","originalKeyword":"动力学分析"},{"id":"f9eafde8-93d7-4c48-8e27-b094740267cf","keyword":"<span style=\"color:red\">忆</span>阻器","originalKeyword":"忆阻器"},{"id":"e4beb5b5-6548-4aab-a651-88285dc7222f","keyword":"混沌电路","originalKeyword":"混沌电路"}],"language":"zh","publisherId":"lzdzxb201601008","title":"基于<span style=\"color:red\">忆</span>阻器的五阶MCK混沌电路研究","volume":"33","year":"2016"},{"abstractinfo":"基于目前石墨烯在<span style=\"color:red\">忆</span>阻器中应用的最新研究进展,从石墨烯类<span style=\"color:red\">忆</span>阻器的基本结构出发,评述了石墨、氧化石墨烯、石墨烯在<span style=\"color:red\">忆</span>阻器中的应用方式,分析了石墨烯类阻变材料的阻变特性、阻变机理及界面势垒调节和电荷陷阱充放电两种模型,最后介绍了目前石墨烯衍生<span style=\"color:red\">忆</span>阻装置亟待解决的问题和发展方向.","authors":[{"authorName":"康越","id":"3eeb558c-fae9-46b4-a2d0-3fbbbcc5e56e","originalAuthorName":"康越"},{"authorName":"楚增勇","id":"e4031922-02c1-495d-91c1-a4d18a38128c","originalAuthorName":"楚增勇"},{"authorName":"张东玖","id":"f0a929dd-33bf-4d36-8deb-554c71bfbb33","originalAuthorName":"张东玖"},{"authorName":"张朝阳","id":"9de2b610-2bfb-4d96-85d4-801612f9450b","originalAuthorName":"张朝阳"}],"doi":"","fpage":"26","id":"c2489a1d-e462-4723-bc80-d619e067b83c","issue":"7","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"5b6a3f8f-0381-4fdf-b4a6-2fce519985c1","keyword":"石墨烯","originalKeyword":"石墨烯"},{"id":"a454641f-3aa5-41a4-9138-064b1443f530","keyword":"氧化石墨烯","originalKeyword":"氧化石墨烯"},{"id":"501031c2-fc0a-4eda-8113-ad3fce3e2a80","keyword":"<span style=\"color:red\">忆</span>阻器","originalKeyword":"忆阻器"}],"language":"zh","publisherId":"cldb201307006","title":"石墨烯衍生材料在<span style=\"color:red\">忆</span>阻器中的应用","volume":"27","year":"2013"},{"abstractinfo":"基于Lyapunov稳定理论,研究了一类三阶<span style=\"color:red\">忆</span>阻器混沌电路系统在单向线性耦合下实现同步的可靠性问题.在临界值上选择恒定的控制器增益则容易实现两个混沌系统的同步;控制器增益时变下,一定强度范围内也可以实现同步.进一步通过数值方法计算了耦合增益对控制器平均功耗和达到同步暂态时间的影响.","authors":[{"authorName":"宋欣林","id":"a0dc333a-8843-4b3e-93b5-bd4848f54c3b","originalAuthorName":"宋欣林"},{"authorName":"王春妮","id":"1335e787-a4af-41c8-bfed-fd56926ac258","originalAuthorName":"王春妮"},{"authorName":"李文超","id":"69c254a4-b0d8-403e-aef0-acecf1063b88","originalAuthorName":"李文超"},{"authorName":"马军","id":"ff019464-61f6-4883-ab8b-8024ef92125e","originalAuthorName":"马军"}],"doi":"10.3969/j.issn.1007-5461.2015.06.013","fpage":"719","id":"26bd80f5-bd30-4e57-816e-a938bb72c925","issue":"6","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"b32f36ea-c709-4c58-9458-e151e6ab12bf","keyword":"混沌","originalKeyword":"混沌"},{"id":"f2434bb0-d8b0-4f5d-aff1-e4eb2243d987","keyword":"<span style=\"color:red\">忆</span>阻器","originalKeyword":"忆阻器"},{"id":"73607a85-d3d4-4ec1-af4b-792850eea3e3","keyword":"Lyapunov稳定理论","originalKeyword":"Lyapunov稳定理论"},{"id":"4ce6e379-1fd7-450b-9bcd-868a13d7816e","keyword":"通信","originalKeyword":"通信"},{"id":"d510ef54-dab6-4d1a-950c-435a3922c733","keyword":"同步","originalKeyword":"同步"}],"language":"zh","publisherId":"lzdzxb201506013","title":"时变耦合下<span style=\"color:red\">忆</span>阻电路的同步","volume":"32","year":"2015"},{"abstractinfo":"随着对计算机性能要求的不断提高，人们一直在寻找能像人脑一样具有学习记忆功能的新型计算机。自从2008年惠普实验室发现<span style=\"color:red\">忆</span>阻器以后，发展具有人脑水平的智能计算机成为可能。众所周知，突触是大脑神经网络的基本单元，突触可塑性是学习和记忆的生物学基础。因此，为了实现具有学习和记忆功能的智能计算机，利用<span style=\"color:red\">忆</span>阻器模拟突触可塑性至关重要。综述了<span style=\"color:red\">忆</span>阻器在模拟突触的增强、抑制、短时程可塑性和长时程可塑性方面的研究现状，并对其研究前景进行了展望。","authors":[{"authorName":"张超超","id":"56e4c97a-7134-4897-b269-0c574365dd46","originalAuthorName":"张超超"},{"authorName":"尚杰","id":"439e6868-ee24-4740-9c6f-5f30d4c19633","originalAuthorName":"尚杰"},{"authorName":"郝健","id":"65c6d466-b905-4da3-bbd5-c2086dbc8cd9","originalAuthorName":"郝健"},{"authorName":"张文斌","id":"c2c47d1a-2ead-4b8c-9121-c5e6e58f4fb9","originalAuthorName":"张文斌"},{"authorName":"冀正辉","id":"25879acd-5e98-4934-8449-60c9e482d19e","originalAuthorName":"冀正辉"},{"authorName":"刘钢","id":"57864273-d8a9-4e03-a037-266528229ff5","originalAuthorName":"刘钢"},{"authorName":"李润伟","id":"9e165b68-fe3d-4acd-bced-7e7ca7ad3af5","originalAuthorName":"李润伟"}],"doi":"10.11896/j.issn.1005-023X.2015.015.014","fpage":"76","id":"68baf659-11dc-43e6-8f79-095817a70252","issue":"15","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"e360c312-b937-4650-a5c7-37b58ad2192a","keyword":"<span style=\"color:red\">忆</span>阻器","originalKeyword":"忆阻器"},{"id":"d8a29676-1e32-4064-bbac-f9e11bdef54f","keyword":"突触","originalKeyword":"突触"},{"id":"3aadc139-654e-4e2b-8e20-67bf9ca49243","keyword":"突触可塑性","originalKeyword":"突触可塑性"},{"id":"c21c0dad-2c68-43b3-8768-5c05da76624c","keyword":"短时程可塑性","originalKeyword":"短时程可塑性"},{"id":"f24600a4-3519-4e69-a3f8-2f88824848cc","keyword":"长时程可塑性","originalKeyword":"长时程可塑性"}],"language":"zh","publisherId":"cldb201515014","title":"<span style=\"color:red\">忆</span>阻器在神经突触仿生中的应用研究进展?","volume":"","year":"2015"},{"abstractinfo":"采用旋涂法制备了Ag/PEDOT∶ PSS∶ PVP/Ta<span style=\"color:red\">忆</span>阻器,发现器件能实现电导的连续变化,并且测试了器件的电学基本性能,包括:模拟短时程可塑性(STP)转化长时程可塑性(LTP)与脉冲频率依赖可塑性(SRDP).测试结果表明:由于PVP掺杂降低了有机层电导,使得掺杂PVP<span style=\"color:red\">忆</span>阻器具有更大的正向电导变化范围,且大大提高了记忆曲线的弛豫时间常数.该器件具有较大的电导变化范围,易于外部电路的识别,且具有很好的一致性,可以用于大规模神经态电路中.","authors":[{"authorName":"魏榕山","id":"9d6eb6c7-55a4-4186-affa-6a4de0fb4bd4","originalAuthorName":"魏榕山"},{"authorName":"蔡宣敬","id":"12066628-5e81-467c-8a56-0a87b1dbe569","originalAuthorName":"蔡宣敬"},{"authorName":"罗文强","id":"f57d83fd-031d-4e30-89e9-627fa3654987","originalAuthorName":"罗文强"},{"authorName":"邓宁","id":"6f3fce91-703f-4fa1-b311-fe2318eec2bc","originalAuthorName":"邓宁"}],"doi":"","fpage":"1751","id":"5ff6109a-d31e-442c-869d-573dfc4a9289","issue":"7","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"5853b07e-610d-4848-a044-d9b6edc7ccf6","keyword":"<span style=\"color:red\">忆</span>阻器","originalKeyword":"忆阻器"},{"id":"0796bdc1-bb8c-442c-a9f0-b80542a753b3","keyword":"PVP掺杂PEDOT∶ PSS","originalKeyword":"PVP掺杂PEDOT∶ PSS"},{"id":"5b3e8e44-0149-4f45-a972-7ad450fa4d06","keyword":"弛豫时间常数","originalKeyword":"弛豫时间常数"}],"language":"zh","publisherId":"rgjtxb98201607007","title":"PVP掺杂对PEDOT∶PSS<span style=\"color:red\">忆</span>阻器学习行为的影响","volume":"45","year":"2016"},{"abstractinfo":"根据《吴仲<span style=\"color:red\">华</span>奖励基金章程》（吴奖[2008]01号），经各高等院校、中国工程热物理学会和中国科学院工程热物理研究所认真评选和推荐，吴仲<span style=\"color:red\">华</span>奖励基金理事会评审并确定授予青年学者戴巍、罗坤、唐桂<span style=\"color:red\">华</span>“吴仲<span style=\"color:red\">华</span>优秀青年学者奖”，授予程雪涛等10位同学“吴仲<span style=\"color:red\">华</span>优秀学生奖”。","authors":[],"doi":"","fpage":"0003","id":"6f0ba2a8-05d9-4d8a-8139-230c2fa7e582","issue":"2","journal":{"abbrevTitle":"GCRWLXB","coverImgSrc":"journal/img/cover/GCRWLXB.jpg","id":"32","issnPpub":"0253-231X","publisherId":"GCRWLXB","title":"工程热物理学报   "},"keywords":[{"id":"1d50df37-d3bd-4afd-b0bc-96fcef367f18","keyword":"基金","originalKeyword":"基金"},{"id":"96f9e366-8b92-4e45-a8dd-4cf57f7c7890","keyword":"奖励","originalKeyword":"奖励"},{"id":"ddda9152-b951-4a3a-a74b-df9c31c71fdd","keyword":"评选","originalKeyword":"评选"},{"id":"b457f4f4-07c3-4491-8696-b0fe00c86d52","keyword":"获奖者","originalKeyword":"获奖者"},{"id":"ba4efb8c-78da-4883-9ae3-5a4a6746f396","keyword":"中国科学院","originalKeyword":"中国科学院"},{"id":"5d901c8f-96a3-4df7-bc14-2bcd72c081a4","keyword":"青年学者","originalKeyword":"青年学者"},{"id":"8a8e4fab-befc-419f-acb8-1abf6556d4ea","keyword":"物理研究所","originalKeyword":"物理研究所"},{"id":"d399f276-b272-4e7a-b3e7-28290b5ba79d","keyword":"高等院校","originalKeyword":"高等院校"}],"language":"zh","publisherId":"gcrwlxb201202047","title":"第四届“吴仲<span style=\"color:red\">华</span>奖励基金”评选出获奖者","volume":"33","year":"2012"}],"totalpage":10,"totalrecord":93}