{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"以氢直流电弧法制备CeHx纳米粉末,再采用放电等离子(SPS)反应液相烧结纳米CeHx和微米B的混合粉末,制备了高性能CeB6多晶块体热阴极材料.研究了SPS制备CeB6的烧结反应式及反应液相烧结机制,确定SPS烧结CeB6的最佳工艺为:压力50MPa,烧结温度1500℃,保温时间5min.实验结果表明,SPS制备得到了高纯单相CeB6多晶块体.纯度达到99.89%,相对密度达到99.61%,维氏硬度达到2051kg/mm2,抗弯强度达到254.2MPa.样品在1600℃温度下拐点发射电流密度达到20.38A/cm2,功函数为2.42eV.与传统制备法相比,SIS制备显著降低了CeB6的烧结温度,缩短了烧结时间,提高了力学和发射性能.","authors":[{"authorName":"周身林","id":"9045796b-f55d-4d45-a477-4a0a39afbffe","originalAuthorName":"周身林"},{"authorName":"张久兴","id":"ac7fbdda-f23e-44b9-a63f-e1bb4f6ef1b7","originalAuthorName":"张久兴"},{"authorName":"刘丹敏","id":"84e0c7d2-a3f4-461f-bd88-97be77a109e4","originalAuthorName":"刘丹敏"},{"authorName":"包黎红","id":"e013a7be-511d-44cb-a0ce-21b9d30a747c","originalAuthorName":"包黎红"}],"doi":"10.3724/SP.J.1077.2009.00793","fpage":"793","id":"88756b8e-776b-4add-9848-542782b88b53","issue":"4","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"8e33abdd-1fce-4ded-8a0e-7f7f6b8c279a","keyword":"放电等离子烧结","originalKeyword":"放电等离子烧结"},{"id":"dd24e8ec-438d-4bbf-94d7-84af88e231fa","keyword":"反应液相烧结","originalKeyword":"反应液相烧结"},{"id":"24f6f9d8-7bda-44fd-a3c5-26036ccda857","keyword":"多晶CeB6阴极","originalKeyword":"多晶CeB6阴极"},{"id":"55d67836-4d21-47d5-8613-271eb55e47ca","keyword":"性能","originalKeyword":"性能"}],"language":"zh","publisherId":"wjclxb200904030","title":"放电等离子反应液相烧结制备CeB6阴极与性能研究","volume":"24","year":"2009"},{"abstractinfo":"以氢直流电弧法制备CeHx纳米粉末, 再采用放电等离子(SPS)反应液相烧结纳米CeHx和微米B的混合粉末, 制备了高性能CeB6多晶块体热阴极材料. 研究了SPS制备CeB6的烧结反应式及反应液相烧结机制, 确定SPS烧结CeB6的最佳工艺为: 压力50MPa, 烧结温度1500℃, 保温时间5min. 实验结果表明, SPS制备得到了高纯单相CeB6多晶块体, 纯度达到99.89%, 相对密度达到99.61%, 维氏硬度达到2051kg/mm2, 抗弯强度达到254.2MPa. 样品在1600℃温度下拐点发射电流密度达到20.38A/cm2, 功函数为2.42eV. 与传统制备法相比, SPS制备显著降低了CeB6的烧结温度, 缩短了烧结时间, 提高了力学和发射性能. ","authors":[{"authorName":"周身林","id":"e0795b46-265e-404d-a8b5-1b388f856a3d","originalAuthorName":"周身林"},{"authorName":"张久兴","id":"6625e746-6651-4283-9252-8bff60c80d7d","originalAuthorName":"张久兴"},{"authorName":"刘丹敏","id":"da5177b9-1e88-4ca1-9ce1-1cbc2c23cdc6","originalAuthorName":"刘丹敏"},{"authorName":"包黎红","id":"e6089201-0feb-441d-a715-326d6a20d19f","originalAuthorName":"包黎红"}],"categoryName":"|","doi":"10.3724/SP.J.1077.2009.00793","fpage":"793","id":"caeb9286-9bc7-4d67-887c-f53d531cdaa6","issue":"4","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"5643ba4f-fd18-48b3-b981-fe4300b8b482","keyword":"放电等离子烧结","originalKeyword":"放电等离子烧结"},{"id":"cddde6c1-8de9-4f04-bfe0-bfa276d5aa08","keyword":" reactive liquid phase sintering","originalKeyword":" reactive liquid phase sintering"},{"id":"dbc543f8-5e15-43e5-b855-52add9cdd487","keyword":" polycrystalline cerium hexaboride","originalKeyword":" polycrystalline cerium hexaboride"},{"id":"ad65cec8-ab80-42dd-8522-16e523125f1c","keyword":" property","originalKeyword":" property"}],"language":"zh","publisherId":"1000-324X_2009_4_2","title":"放电等离子反应液相烧结制备CeB6阴极与性能研究","volume":"24","year":"2009"},{"abstractinfo":"以CeB6和GdB6粉末为原料,采用放电等离子烧结技术(SPS)制备了高致密的多元稀土六硼化物GdxCe1-xB6(x=0.0~1.0)多晶块体.系统研究了Gd掺杂对GdxCe1-xB6多晶块体的物相组成、力学性能、电阻率及热发射性能的影响.研究结果表明,在烧结温度为1550℃,烧结压强为50 MPa,保温5 min的工艺条件下,可获得高致密的GdxCe1-xB6单相块体材料.烧结块体的维氏硬度可达24.02 GPa.热电子发射性能测试结果表明,适量的Gd掺杂可以显著提高电子发射性能,其中Gd0.1Ce0.9B6成分块体具有最佳的热电子发射性能,在1600℃,4 kV外加电压条件下,发射电流密度达到101.57A·cm-2,零场电流密度达到21.94 A·cm-2,平均有效逸出功为2.34 eV,优于同一条件下GdB6CeB6块体的热发射性能.","authors":[{"authorName":"梁超龙","id":"352896d3-f39c-4ab4-9d01-acfde6c8de01","originalAuthorName":"梁超龙"},{"authorName":"张忻","id":"37aef27b-be5b-4ba8-b029-587b0cb2a8ed","originalAuthorName":"张忻"},{"authorName":"刘洪亮","id":"b9fda007-7046-4a0f-a437-d7b69cfa4e61","originalAuthorName":"刘洪亮"},{"authorName":"张繁星","id":"5775eca6-222a-4040-ac2b-2912255dc3b7","originalAuthorName":"张繁星"},{"authorName":"王杨","id":"b59b3192-bbb9-488d-88ed-b83804673b45","originalAuthorName":"王杨"},{"authorName":"郑亮","id":"58dc7945-847c-4b15-98af-771295d1aaff","originalAuthorName":"郑亮"},{"authorName":"张久兴","id":"bbe020a3-542b-4940-97bf-42316e23d9a9","originalAuthorName":"张久兴"}],"doi":"","fpage":"3267","id":"b3c753c0-9edf-4acf-85dc-8e46612e12d1","issue":"12","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"e696a9eb-f0ac-43cc-afe7-bc692aed57d4","keyword":"CeB6阴极材料","originalKeyword":"CeB6基阴极材料"},{"id":"c15939b5-a004-4e2b-8083-9b5244877d93","keyword":"Gd掺杂","originalKeyword":"Gd掺杂"},{"id":"30876574-dfc6-48d0-8428-75082beae3cf","keyword":"热电子发射性能","originalKeyword":"热电子发射性能"},{"id":"ee1c1e08-634d-4b37-ad74-9fc370f3df53","keyword":"放电等离子烧结","originalKeyword":"放电等离子烧结"}],"language":"zh","publisherId":"xyjsclygc201612044","title":"Gd掺杂CeB6阴极材料的制备及性能","volume":"45","year":"2016"},{"abstractinfo":"采用固相反应法成功地将Eu元素掺入CeB6纳米晶中,并系统地研究了对其光吸收性能的影响规律。由XRD分析、扫描电镜和透射电镜能谱分析结果充分证明了Eu元素成功地掺入了CeB6晶格中。光吸收结果表明,随着Eu掺杂量的增加, CeB6吸收峰波长从938 nm增加至1718 nm,产生了“红移”现象。与此同时,透射光波长也从可见光区域的798 nm红移至近红外区域的1138 nm。本文揭示了通过Eu掺杂可使CeB6透射光波长和吸收峰波长连续可调。这一特性对于拓展CeB6的光学应用具有重要意义。","authors":[{"authorName":"包黎红","id":"20ed3855-dc38-4c82-b7a9-d03194005b26","originalAuthorName":"包黎红"},{"authorName":"明明","id":"b1eaf540-da0b-4e5b-a6e0-7d8fd069bec9","originalAuthorName":"明明"},{"authorName":"特古斯","id":"70e72941-8ce2-4b55-a8a8-91e6dc77a8d0","originalAuthorName":"特古斯"}],"doi":"10.15541/jim20150208","fpage":"1110","id":"802cab42-67b0-4ef9-8163-d2ad3327080d","issue":"10","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"4c378897-913c-46e9-ac0f-bf3a7221ebe2","keyword":"稀土硼化物","originalKeyword":"稀土硼化物"},{"id":"863b38eb-bab2-4f47-bf18-b5bd7e083f6e","keyword":"纳米晶","originalKeyword":"纳米晶"},{"id":"949ec4cc-4174-4c74-b228-a15d780a5bd5","keyword":"光吸收","originalKeyword":"光吸收"}],"language":"zh","publisherId":"wjclxb201510019","title":"Eu-掺杂CeB6纳米晶的合成与光吸收研究","volume":"","year":"2015"},{"abstractinfo":"通过B4C、CeO2和C的化学反应,采用原位生成法,在热压烧结的条件下制备了CeB6/B4C陶瓷材料.研究了CeB6/B4C陶瓷材料的力学性能和显微组织,并对其增韧机理进行了分析.结果表明:原位生成的CeB6/B4C陶瓷只有CeB6和B4C两相,其显微维氏硬度、抗弯强度、断裂韧性最大值分别达到40.64GPa、346.7MPa、5.95MPa·m1/2,比纯碳化硼分别提高了52.50%、17.96%、61.68%.原位生成的CeB6颗粒细晶增韧补强,B4C和CeB6颗粒之间热膨胀系数不匹配产生的残余应力导致的裂纹偏转以及沿晶断裂是CeB6/B4C陶瓷的主要增韧机制.","authors":[{"authorName":"徐璟玉","id":"58f7a0d3-8c82-473e-8b98-03ab6fe778ea","originalAuthorName":"徐璟玉"},{"authorName":"","id":"dca37fef-d7ec-40c1-b1f0-83b3468f8aec","originalAuthorName":""},{"authorName":"吴文远","id":"1a8f905b-f3e8-48db-84a5-021ccf66f701","originalAuthorName":"吴文远"},{"authorName":"边雪","id":"8fd43bed-ec39-4b8f-b3af-108816e6630b","originalAuthorName":"边雪"},{"authorName":"涂赣峰","id":"e9a6f987-e0c0-4400-a0ca-a47a9ee854fc","originalAuthorName":"涂赣峰"}],"doi":"","fpage":"278","id":"46410098-b5c5-43b8-bb34-0cdd47d020f9","issue":"2","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"fe34e241-0960-42fb-8697-3b547b64291c","keyword":"原位生成","originalKeyword":"原位生成"},{"id":"9593b519-402b-4ed2-804f-85976b35e3fd","keyword":"CeB6/B4C陶瓷","originalKeyword":"CeB6/B4C陶瓷"},{"id":"9aa77f69-fa2c-4e05-abcc-7610d1c22e3b","keyword":"力学性能","originalKeyword":"力学性能"},{"id":"bcbc6645-2780-4545-8c53-b599d3efb119","keyword":"显微组织","originalKeyword":"显微组织"},{"id":"0b740dd2-75d1-454f-96d3-6fbd33913af2","keyword":"增韧机理","originalKeyword":"增韧机理"}],"language":"zh","publisherId":"gncl200902029","title":"原位生成CeB6/B4C陶瓷的力学性能和显微组织","volume":"40","year":"2009"},{"abstractinfo":"采用区域熔炼法成功制备出了高质量、高纯度、大尺寸的LaB6CeB6单晶体。系统分析了制备过程中每个参数对晶体生长的影响,确定了晶体成长最佳工艺:(1)LaB6:转速为30r/min,生长速度为8~10mm/h,两次区熔;(2)CeB6:转速为30r/min,生长速度15~20mm/h,一次区熔。然后对晶体进行表征,主要方法有单晶衍射、断面扫描、拉曼衍射、摇摆曲线。由此可知悬浮区域熔炼法是制备高质量、高纯度、大尺寸REB6的最佳方法。","authors":[{"authorName":"张宁","id":"a82ffef4-65fe-47d7-9647-7ad53cc31866","originalAuthorName":"张宁"},{"authorName":"张久兴","id":"36dc810a-4ec9-4dc6-9c68-4f3a235d2cb1","originalAuthorName":"张久兴"},{"authorName":"包黎红","id":"60129807-a6c6-4c76-9cec-e35e90708a15","originalAuthorName":"包黎红"},{"authorName":"李晓娜","id":"84b507af-d188-47d7-8541-b570377ee4e5","originalAuthorName":"李晓娜"}],"doi":"","fpage":"178","id":"8b25bded-f91e-4a36-8274-9f321871d4ca","issue":"2","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"adf7c905-03d7-4c60-9dea-476125d05f12","keyword":"悬浮区域熔炼","originalKeyword":"悬浮区域熔炼"},{"id":"c598d0d6-3c29-4e27-8a49-3386665753e8","keyword":"单晶LaB6","originalKeyword":"单晶LaB6"},{"id":"2d310e21-3b4c-40a7-b61e-4551503ccb14","keyword":"单晶CeB6","originalKeyword":"单晶CeB6"},{"id":"f65531d7-9e45-46cb-936e-eafa3bcc2ee9","keyword":"表征","originalKeyword":"表征"}],"language":"zh","publisherId":"gncl201202012","title":"悬浮区域熔炼法制备REB6(LaB6CeB6)单晶体及其表征","volume":"43","year":"2012"},{"abstractinfo":"以稀土氧化物CeO2为烧结助剂,采用放电等离子(SPS)烧结工艺制备了B4C基复相陶瓷.研究了CeO2添加量(质量分数,%)对B4C基体的致密化和烧结体硬度的影响,并与纯B4C样品进行对比.借助X射线衍射和扫描电镜分析了复合材料的物相组成和微观结构.结果表明,CeO2粉体的添加可以显著提高SPS条件下碳化硼的烧结性能.生成相CeB6填充在B4C晶粒之间,提高了制品的相对密度.当CeO2添加量为4%时,在烧结压力35 MPa和1750℃下烧结,样品的相对密度最高(96.7%),其洛氏硬度可达到89.6 (HRA).","authors":[{"authorName":"孙川","id":"8ca0974b-2753-45dd-9ee4-b528edc3df5f","originalAuthorName":"孙川"},{"authorName":"李云凯","id":"9eb4620d-517e-456f-b854-6afff507f068","originalAuthorName":"李云凯"},{"authorName":"王云飞","id":"108ad313-690a-4f47-bbb6-e1b691e2383d","originalAuthorName":"王云飞"},{"authorName":"郭建斌","id":"efba5c4e-e723-4ad6-8917-5e6d393961a9","originalAuthorName":"郭建斌"},{"authorName":"姜全振","id":"648842df-a0fa-47e5-a180-7b26a6ac4e08","originalAuthorName":"姜全振"}],"doi":"","fpage":"2071","id":"0ca53f33-3efc-423c-9e26-34eafa48fce8","issue":"8","journal":{"abbrevTitle":"XYJS","coverImgSrc":"journal/img/cover/XYJS.jpg","id":"67","issnPpub":"0258-7076","publisherId":"XYJS","title":"稀有金属"},"keywords":[{"id":"c0aee260-f5d0-451e-bebf-24f2d4807d6b","keyword":"B4C","originalKeyword":"B4C"},{"id":"164043ea-74da-42e4-a972-6cef5cc24b2d","keyword":"CeB6","originalKeyword":"CeB6"},{"id":"6f5d494b-e71e-4412-9dfe-d40910410131","keyword":"CeO2","originalKeyword":"CeO2"},{"id":"b80c629b-0840-4011-91a2-6dbf2a590203","keyword":"放电等离子烧结","originalKeyword":"放电等离子烧结"},{"id":"836acf7a-e220-4b94-ae91-96b01b30da42","keyword":"致密化","originalKeyword":"致密化"}],"language":"zh","publisherId":"xyjsclygc201608028","title":"放电等离子烧结制备B4C/CeB6复合材料","volume":"45","year":"2016"},{"abstractinfo":"","authors":[{"authorName":"","id":"2069bd38-be36-4c38-b87b-7b8c41e58753","originalAuthorName":""},{"authorName":"","id":"6130ca4c-0232-445a-ba84-4a588ceede95","originalAuthorName":""},{"authorName":"","id":"e93bfb93-d57c-4473-a96b-8a57d1b6e070","originalAuthorName":""},{"authorName":"","id":"d8e2c45e-6baf-4c2e-bb46-d4ae713eed60","originalAuthorName":""},{"authorName":"","id":"8dd13be1-1602-4466-a854-62040c83fcad","originalAuthorName":""},{"authorName":"","id":"c86a6f70-f1be-4952-9ec1-423e24dba9b6","originalAuthorName":""}],"doi":"10.1016/S1002-0721(09)60126-5","fpage":"424","id":"461d7b85-9bed-4db4-b05d-dc452252982d","issue":"3","journal":{"abbrevTitle":"XTXBYWB","coverImgSrc":"journal/img/cover/XTXBEN.jpg","id":"66","issnPpub":"1002-0721","publisherId":"XTXBYWB","title":"稀土学报(英文版)"},"keywords":[{"id":"e5aa4c81-aaae-4a6e-9f6b-4568459b144f","keyword":"","originalKeyword":""}],"language":"zh","publisherId":"zgxtxb-e201003022","title":"Field emission from single-crystalline CeB6 nanowires","volume":"28","year":"2010"},{"abstractinfo":"采用放电等离子烧结技术, 以氢直流电弧法制备的La-LaH2纳米粉末为原料, 制备了高纯LaB6多晶纳米块体热阴极材料. 系统研究了LaH2的脱氢反应、SPS合成LaB6的烧结反应式, 并用XRD、SEM、TEM和AFM对LaB6烧结块体的相与结构进行了表征. 实验结果表明, LaH2在796.4℃时发生脱氢反应; SPS制备得到了单相LaB6纳米多晶块体, 纯度达到99.867%, 相对密度达到99.2%, 和其他烧结方法相比, 样品显微硬度及抗弯强度等性能显著提高. 晶体为大小均匀, 形态规则完整的等轴晶, 50MPa, 烧结温度1250~1350℃范围内平均晶粒尺寸为120nm, 随烧结温度的升高, 晶粒尺寸逐渐增大.","authors":[{"authorName":"周身林","id":"1243237e-400a-4f60-a40d-2726a75d95d5","originalAuthorName":"周身林"},{"authorName":"刘丹敏","id":"221abd8b-3555-43d9-9df7-aaa9832f9083","originalAuthorName":"刘丹敏"},{"authorName":"张久兴","id":"78289aa7-086c-4c1f-ac39-c70a74c16cc3","originalAuthorName":"张久兴"}],"categoryName":"|","doi":"10.3724/SP.J.1077.2008.01199","fpage":"1199","id":"420df3df-47ec-4da6-a7fb-a0b1e353e805","issue":"6","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"f0760edd-8156-41a6-8cfd-468209bd0769","keyword":"放电等离子烧结","originalKeyword":"放电等离子烧结"},{"id":"bd07ddb9-c5da-43b9-a198-b11dc0b97142","keyword":" polycrystal Lanthanum hexaboride","originalKeyword":" polycrystal Lanthanum hexaboride"},{"id":"0f2d95aa-b701-4d10-9b4c-3aca5a2710dc","keyword":" nanostructured bulk","originalKeyword":" nanostructured bulk"},{"id":"89eb4297-dfc6-4292-9f40-396ceed53b1e","keyword":" hot cathode","originalKeyword":" hot cathode"}],"language":"zh","publisherId":"1000-324X_2008_6_37","title":"高纯多晶LaB6纳米块体阴极材料的制备及表征","volume":"23","year":"2008"},{"abstractinfo":"采用放电等离子烧结技术,以氢直流电弧法制备的La-LaH2纳米粉末为原料,制备了高纯LaB6多晶纳米块体热阴极材料.系统研究了LaH2的脱氢反应、SPS合成LaB6的烧结反应式,并用XRD、SEM、TEM和AFM对LaB6烧结块体的相与结构进行了表征.实验结果表明,LaH2在796.4℃时发生脱氢反应;SPS制备得到了单相LaB6纳米多晶块体,纯度达到99.867%,相对密度达到99.2%,和其他烧结方法相比,样品显微硬度及抗弯强度等性能显著提高.晶体为大小均匀,形态规则完整的等轴晶,50MPa,烧结温度1250~1350℃范围内平均晶粒尺寸为120nm,随烧结温度的升高,晶粒尺寸逐渐增大.","authors":[{"authorName":"周身林","id":"6c5c6ba1-efab-4f0f-b807-79f23629a1b9","originalAuthorName":"周身林"},{"authorName":"刘丹敏","id":"95ecfb3b-04aa-470a-8095-c28a1130d47e","originalAuthorName":"刘丹敏"},{"authorName":"张久兴","id":"c5343fcc-3039-4999-b76b-7c783bbedaa3","originalAuthorName":"张久兴"}],"doi":"10.3321/j.issn:1000-324X.2008.06.023","fpage":"1199","id":"d0696685-b548-499f-afc8-88e8e2b2c0a5","issue":"6","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"5fb8394f-6c62-484d-a240-a855ba3d0a10","keyword":"放电等离子烧结","originalKeyword":"放电等离子烧结"},{"id":"0a7d50bc-5c22-4a98-a635-c8243912b053","keyword":"多晶LaB6","originalKeyword":"多晶LaB6"},{"id":"851aa6ec-b08f-4015-b591-bb08583f2e0a","keyword":"纳米块体","originalKeyword":"纳米块体"},{"id":"07bd59fb-99c1-44c6-8e09-40e28131e357","keyword":"热阴极","originalKeyword":"热阴极"}],"language":"zh","publisherId":"wjclxb200806023","title":"高纯多晶LaB6纳米块体阴极材料的制备及表征","volume":"23","year":"2008"}],"totalpage":2258,"totalrecord":22578}