材料期刊网

Study of the dose rate effect of 180 nm nMOSFETs

HE Bao-Ping , YAO Zhi-Bin , SHENG Jiang-Kun , WANG Zu-Jun , HUANG Shao-Yan , LIU Min-Bo , XIAO Zhi-Gang

中国物理C doi:10.1088/1674-1137/39/1/016004

关键词: