{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"采用共沉淀法合成了Ce,Pr∶YLuAG粉末,在1450℃下煅烧可获得石榴石结构纯相.经过压制成型、固相烧结等工艺制备了多晶料棒,TEM显示二次烧结获得的料棒具有良好的结晶性.采用光学浮区法生长了Ce,Pr∶YLuAG晶体.晶体通体透明,呈浅黄色,肩部有少量裂纹.透过率达到81.8%,接近于理论值84.2%.晶体在460 nm波长激发下呈现530 nm发射带和610 nm发射峰,分别对应Ce3+和pr3+的特征发射,表明Ce3+可以向Pr3+进行能量转移;在487 nm激发下晶体仅出现pr3+离子的特征发射峰.Ce,Pr∶YLuAG晶体色坐标为(0.474,0.495),比商用Ce∶YAG荧光粉更靠近红光区域,可以弥补现有荧光粉不足,更适合制造白光LED.","authors":[{"authorName":"牛雪姣","id":"c6f53918-8ccf-4f3c-898b-424a9a9b8088","originalAuthorName":"牛雪姣"},{"authorName":"徐家跃","id":"04b1b68a-bd23-47ef-a26e-560453dca00f","originalAuthorName":"徐家跃"},{"authorName":"周鼎","id":"73e06577-c7a8-4e0d-991b-cd6218791e5f","originalAuthorName":"周鼎"},{"authorName":"王树贤","id":"538cb90c-4a46-4a28-88ef-73185e1e9bbe","originalAuthorName":"王树贤"},{"authorName":"张怀金","id":"7d2b21d9-d8c4-41b6-9af1-8a5464b8b30b","originalAuthorName":"张怀金"}],"doi":"10.15541/jim20150160","fpage":"1183","id":"1f8f9b94-dc28-42f9-ba92-c96c44076eee","issue":"11","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"7ec4c161-cd02-4a4a-93fb-6c77a703b9bf","keyword":"光学浮区法","originalKeyword":"光学浮区法"},{"id":"61d7497a-2ec1-49ce-9348-2c6af5b11e17","keyword":"晶体生长","originalKeyword":"晶体生长"},{"id":"59bb37e5-92d4-4f0f-9007-26ff474a2b24","keyword":"掺杂","originalKeyword":"掺杂"},{"id":"0591f0ed-9e98-4dbe-b572-618387b908ed","keyword":"YLuAG晶体","originalKeyword":"YLuAG晶体"}],"language":"zh","publisherId":"wjclxb201511010","title":"Ce,Pr∶YLuAG原料合成、晶体生长及LED应用","volume":"30","year":"2015"},{"abstractinfo":"本文扼要地综述了20世纪后半叶人工晶体发展的简况,其中包括块状晶体、薄膜晶体、纤维晶体、纳米晶体.最后在已取得成就的基础上,展望了人工晶体发展的未来.","authors":[{"authorName":"张克从","id":"e537a39e-5ef7-4d60-8d35-5d15cfa4c83e","originalAuthorName":"张克从"},{"authorName":"王希敏","id":"ca879cb7-3aa8-44f4-8e38-3986222009b3","originalAuthorName":"王希敏"}],"doi":"10.3969/j.issn.1000-985X.2002.03.008","fpage":"228","id":"20edc485-0134-4a9b-b43b-350f5438679a","issue":"3","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"621b638e-ea46-43f7-9a0c-299fd73641d5","keyword":"人工晶体","originalKeyword":"人工晶体"},{"id":"df815fa3-cffe-48b9-b964-8460fd87e1c1","keyword":"发展","originalKeyword":"发展"},{"id":"c8479a1a-9274-4935-8e6f-b4d7f785044d","keyword":"展望","originalKeyword":"展望"}],"language":"zh","publisherId":"rgjtxb98200203008","title":"人工晶体的发展","volume":"31","year":"2002"},{"abstractinfo":"本文考察了一些典型的晶体材料及其工业生长技术,如提拉法生长硅单晶,水热法生长水晶,VGF法生长GaAs,下降法生长锗酸铋,壳熔法生长锆石等,探讨了工业晶体生长的特点和发展方向.","authors":[{"authorName":"徐家跃","id":"6ed23511-efc8-4cb8-9291-bbc607302893","originalAuthorName":"徐家跃"}],"doi":"","fpage":"591","id":"68bf1c25-d53d-47e8-bbeb-37f4253bfaa4","issue":"3","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"3c30a6d4-e9bc-47c0-ab8f-ab585c772b36","keyword":"晶体生长","originalKeyword":"晶体生长"},{"id":"7861ca93-4277-4902-a1b1-e0e026ad926d","keyword":"提拉法","originalKeyword":"提拉法"},{"id":"7b149cef-1904-4d38-865d-3f0aa9d003d2","keyword":"水热法","originalKeyword":"水热法"},{"id":"c825900f-d991-40f5-acff-3ad5ad2c5fb5","keyword":"下降法","originalKeyword":"下降法"},{"id":"cc6ed995-711d-496b-b0ef-255e38a25d2d","keyword":"模拟","originalKeyword":"模拟"}],"language":"zh","publisherId":"rgjtxb98200903012","title":"工业晶体生长","volume":"38","year":"2009"},{"abstractinfo":"功能晶体材料是光电功能材料的主体.本文概述了功能晶体材料从天然晶体到人工晶体,从电子材料到光电子材料的发展历程,并着重探讨了今后的发展动向.","authors":[{"authorName":"蒋民华","id":"2e5acf9f-fd58-4850-9c1b-34d024b63dff","originalAuthorName":"蒋民华"}],"doi":"","fpage":"11","id":"f3db1f03-b54c-4519-8fea-14ecf94adcaf","issue":"z1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"46aa2915-0434-451c-ae79-0e91c5ec4e22","keyword":"功能晶体材料","originalKeyword":"功能晶体材料"},{"id":"d836b7f3-1f69-4f55-b7d3-d33eec4a484d","keyword":"电子材料","originalKeyword":"电子材料"},{"id":"41f12cb0-6c28-4e2b-a047-a3f35e087cc1","keyword":"光电子材料","originalKeyword":"光电子材料"},{"id":"af93c1fc-addd-4ab4-a6c7-10c124b2818b","keyword":"发展动向","originalKeyword":"发展动向"}],"language":"zh","publisherId":"gncl2004z1003","title":"功能晶体材料的发展","volume":"35","year":"2004"},{"abstractinfo":"声子晶体是一种新型的声学功能材料,对声子晶体的研究引起了各国研究机构的极大关注.文章介绍了声子晶体的概念及基本特征,阐述了声子晶体禁带机理及声子晶体的各种潜在应用领域,最后对声子晶体的研究发展作了展望.","authors":[{"authorName":"温激鸿","id":"42827d0e-dbc7-430c-9f2f-c55276e79d47","originalAuthorName":"温激鸿"},{"authorName":"韩小云","id":"45c8cccc-6ceb-4250-b915-ad7081f5ff3e","originalAuthorName":"韩小云"},{"authorName":"王刚","id":"363b56c9-7b59-425f-9698-f1dbb5ccd3f5","originalAuthorName":"王刚"},{"authorName":"赵宏刚","id":"6ddd38e5-bbee-4465-be31-ef5d43d9bf7a","originalAuthorName":"赵宏刚"},{"authorName":"刘耀宗","id":"b17fe2e3-df47-43ad-ba8e-22f80b295f01","originalAuthorName":"刘耀宗"}],"doi":"","fpage":"364","id":"422abcc5-1e96-49a2-b507-4bda51b85096","issue":"4","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"70aefd01-d990-49c6-83c1-2720fa49cc41","keyword":"声子晶体","originalKeyword":"声子晶体"},{"id":"85ea2a1b-1c72-4c73-a722-015e35cfa6fc","keyword":"弹性波禁带","originalKeyword":"弹性波禁带"},{"id":"fc0f69da-d966-4030-bc31-3a286309eabe","keyword":"减振降噪","originalKeyword":"减振降噪"}],"language":"zh","publisherId":"gncl200304004","title":"声子晶体研究概述","volume":"34","year":"2003"},{"abstractinfo":"采用中频感应提拉法生长了Yb:FAP晶体.对晶体生长中影响晶体质量的因素特别是原料的处理、CaF2的挥发等进行了研究和讨论.运用ICP-AES测定Yb3+离子在Yb:FAP晶体中的分凝系数.对Yb:FAP晶体进行了高分辨X射线的四圆衍射实验,结果表明晶体具有比较高的晶格完整性.","authors":[{"authorName":"宋平新","id":"a804a36d-f836-4d1e-a234-1fd8f1087e91","originalAuthorName":"宋平新"},{"authorName":"赵志伟","id":"b959ba83-c67b-4804-ad26-5ba7fcdc6a55","originalAuthorName":"赵志伟"},{"authorName":"徐晓东","id":"365dea2b-b748-4297-a871-170d7abc66ce","originalAuthorName":"徐晓东"},{"authorName":"姜本学","id":"3389303a-8e9f-44d0-9b35-350ca67479ee","originalAuthorName":"姜本学"},{"authorName":"邓佩珍","id":"0a452be6-c6dd-46d0-8e14-471e6a57ab2d","originalAuthorName":"邓佩珍"},{"authorName":"徐军","id":"209b8b27-2bd2-4770-97d0-01092b2449be","originalAuthorName":"徐军"}],"doi":"10.3969/j.issn.1000-985X.2005.04.003","fpage":"581","id":"76af7db7-330f-4c7e-89d2-ec38a4a41d7c","issue":"4","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"bc10d27f-2aab-4d06-8a8c-aa1a8521d75d","keyword":"Yb:FAP晶体","originalKeyword":"Yb:FAP晶体"},{"id":"340831d3-b22e-4e47-9f4f-6de47cb47fd6","keyword":"晶体生长","originalKeyword":"晶体生长"},{"id":"90fad076-69e0-46ce-8942-313467812671","keyword":"原料","originalKeyword":"原料"},{"id":"b41f4664-d00a-4420-ba40-06208d17b355","keyword":"挥发物","originalKeyword":"挥发物"},{"id":"396c0788-d2ed-4ccb-aca7-d217ddcd1e44","keyword":"分凝系数","originalKeyword":"分凝系数"}],"language":"zh","publisherId":"rgjtxb98200504003","title":"Yb:FAP晶体生长","volume":"34","year":"2005"},{"abstractinfo":"熔化是自然界中的一种普遍现象,也是材料的重要相变过程之一。本文综述近年来晶体熔化过程研究取得的主要结果和最新进展,着重论述晶体界面对熔化过程的影响和过热晶体的获得,并分析晶体过热的极限。","authors":[{"authorName":"卢柯","id":"152247c9-b56d-4b29-b035-1e2999b955b5","originalAuthorName":"卢柯"},{"authorName":"生红卫","id":"f54fd938-e80b-456d-8994-bc4458f3eb59","originalAuthorName":"生红卫"},{"authorName":"金朝晖","id":"6940f919-1a6c-4b0d-a4cd-3b7f2f0b0aeb","originalAuthorName":"金朝晖"}],"categoryName":"|","doi":"","fpage":"658","id":"5d455fa3-7545-439c-8aa4-fe994cec5f36","issue":"6","journal":{"abbrevTitle":"CLYJXB","coverImgSrc":"journal/img/cover/CLYJXB.jpg","id":"16","issnPpub":"1005-3093","publisherId":"CLYJXB","title":"材料研究学报"},"keywords":[{"id":"925c9f8b-23b7-45fa-9f01-8008f615028d","keyword":"熔化","originalKeyword":"熔化"},{"id":"68304a16-fc1e-4319-93a3-550c3b9973fd","keyword":"null","originalKeyword":"null"},{"id":"bbc4c200-4b3d-47c5-a7c5-fa155d28306a","keyword":"null","originalKeyword":"null"}],"language":"zh","publisherId":"1005-3093_1997_6_2","title":"晶体的熔化和过热","volume":"11","year":"1997"},{"abstractinfo":"详细论述了光子晶体概念提出到现在的十五年的研究进展.在阐述了光子晶体的概念及其抑制自发辐射和光子局域化等特性后,分别介绍了关于光子晶体的理论研究、实验研究和应用研究.理论研究重点介绍了平面波展开法、格林函数法、时域有限差分法、转移矩阵法.实验研究重点介绍了光子晶体的制作方法:打孔法、逐层叠加法、微机械技术、光学方法,反蛋白石法及刻蚀等多种半导体制作技术,同时介绍了光子晶体特性参数的测量.应用研究重点介绍了光晶体光纤和波导、低损耗反射镜和超棱镜、光子晶体微谐振腔、光子晶体滤波器、高效发光二极管和光子晶体偏振器、非线性光学效应、低阈值激光振荡等.","authors":[{"authorName":"邓开发","id":"15f401a8-bfbe-4ea4-bfd6-582c89d48d47","originalAuthorName":"邓开发"},{"authorName":"是度芳","id":"5d2cd4ed-d378-410c-a4bf-20e605ec6e2e","originalAuthorName":"是度芳"},{"authorName":"蒋美萍","id":"cbd751b8-78aa-4799-95fd-efacf760dcab","originalAuthorName":"蒋美萍"},{"authorName":"李承芳","id":"a8789796-b86b-4551-9099-1c7d44df554e","originalAuthorName":"李承芳"}],"doi":"10.3969/j.issn.1007-5461.2004.05.003","fpage":"555","id":"eafdbdbf-057c-4056-9078-7463da06133a","issue":"5","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报 "},"keywords":[{"id":"d6f57d89-6533-4efb-b5af-d72cffa49561","keyword":"光子晶体","originalKeyword":"光子晶体"},{"id":"9421ee6c-b08c-4a9e-ba35-c248d005d315","keyword":"光子带隙","originalKeyword":"光子带隙"},{"id":"432bc60b-4083-4a06-ad46-c7f1b7094451","keyword":"自发辐射抑制","originalKeyword":"自发辐射抑制"},{"id":"10cc1e00-d730-457c-bed9-de310756a5f6","keyword":"光子局域化","originalKeyword":"光子局域化"}],"language":"zh","publisherId":"lzdzxb200405003","title":"光子晶体研究进展","volume":"21","year":"2004"},{"abstractinfo":"本文采用助熔剂籽晶提拉法生长出了Nd:KGW激光晶体.利用光学显微镜对晶体表面进行观察、并拍摄到晶体裂缝、生长丘、生长条纹和包裹物等缺陷的照片.分析其原因,是由于晶体生长工艺的不稳定,尤其是晶体生长过程中的温度梯度不够合适、提拉速度过快、降温速率偏快等所致.并由于生长体系粘度较大,容易形成包裹,晶体包裹物经XRD分析认为其中主要是熔体.","authors":[{"authorName":"洪元佳","id":"ae05f4f3-2e2b-40f3-b5dd-52bd72c559e5","originalAuthorName":"洪元佳"},{"authorName":"李建立","id":"69c82d1a-f664-4f25-a3c4-4fa64e482dd9","originalAuthorName":"李建立"},{"authorName":"刘景和","id":"faad661d-6f68-4433-9de4-8b327ec470fc","originalAuthorName":"刘景和"},{"authorName":"李卫青","id":"f31a5446-f032-4450-8786-c043dd7799ca","originalAuthorName":"李卫青"},{"authorName":"王唯","id":"199150c9-0f7e-4ddb-8a3c-61054e3db0e0","originalAuthorName":"王唯"},{"authorName":"邢洪言","id":"ac53fabc-eacb-4721-89c2-6ae2f2e7b41d","originalAuthorName":"邢洪言"},{"authorName":"洪广言","id":"02b8d4fa-6abb-4739-96db-f9f9ba724212","originalAuthorName":"洪广言"},{"authorName":"郭俊","id":"a4f8780b-9d6c-4fa6-aeca-0ded6424e9ec","originalAuthorName":"郭俊"}],"doi":"10.3969/j.issn.1000-985X.2000.01.016","fpage":"73","id":"59e464b2-8154-4ff6-b6f1-7f0060e43d2b","issue":"1","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"fc0942f3-e643-4ddd-a5b8-3e0de53ba240","keyword":"掺钕钨酸钾钆晶体","originalKeyword":"掺钕钨酸钾钆晶体"},{"id":"83f72ee3-5649-40af-b2f0-f479797c5dd1","keyword":"TSSG","originalKeyword":"TSSG"},{"id":"366148ba-5abf-4343-a91b-5e94a599d6ca","keyword":"表面缺陷","originalKeyword":"表面缺陷"},{"id":"4125278e-219e-453e-ae47-996d9edd8fa9","keyword":"包裹物","originalKeyword":"包裹物"},{"id":"d3cb851b-9e5f-4402-9fee-5807aa511216","keyword":"激光晶体","originalKeyword":"激光晶体"},{"id":"ee02ef7c-378e-4527-8096-d2c9e9a6009a","keyword":"熔盐法","originalKeyword":"熔盐法"}],"language":"zh","publisherId":"rgjtxb98200001016","title":"激光晶体Nd:KGW晶体的表面缺陷观察","volume":"29","year":"2000"},{"abstractinfo":"本文采用高温溶液降温法生长出了掺Nb5+和Nd3+不同浓度的KTP(简称KTNNP)晶体,研究了晶体的生长习性与掺质种类的关系.测定了晶体的晶胞参数,并与KTP晶体作了对比,以掺质后结构的变化探讨了KTNNP晶体生长习性的成因.确定了掺质在生长体系中的分配系数,发现掺铌1%时使Nd3+的分配系数增大12.6倍,并提出了进一步提高晶体中Nd3+含量的设想.","authors":[{"authorName":"常新安","id":"61033d25-0894-4a1f-a730-b82d0bbb027e","originalAuthorName":"常新安"},{"authorName":"臧和贵","id":"24b5fdd9-cb21-4503-b3ac-f3c889a0842e","originalAuthorName":"臧和贵"},{"authorName":"肖卫强","id":"c7ecb198-4311-4f5d-b151-793a5a08935e","originalAuthorName":"肖卫强"},{"authorName":"王希敏","id":"e59ba1c2-900f-4e76-853c-856b792eb74b","originalAuthorName":"王希敏"},{"authorName":"江少林","id":"3849073c-7700-4edf-89a4-1a415fd99b16","originalAuthorName":"江少林"},{"authorName":"张克从","id":"b837e333-9342-41f4-a3a6-c6ce25f01df3","originalAuthorName":"张克从"}],"doi":"10.3969/j.issn.1001-1625.2000.01.011","fpage":"35","id":"be6534fd-9fbb-4f74-bee8-d7b28b448100","issue":"1","journal":{"abbrevTitle":"GSYTB","coverImgSrc":"journal/img/cover/GSYTB.jpg","id":"36","issnPpub":"1001-1625","publisherId":"GSYTB","title":"硅酸盐通报 "},"keywords":[{"id":"1a380caa-5f0b-4e7a-b82b-5d89f6422456","keyword":"KTNNP晶体","originalKeyword":"KTNNP晶体"},{"id":"007fbedc-6c41-4dfd-a6dd-4e520f57db5a","keyword":"生长习性","originalKeyword":"生长习性"},{"id":"9dfed95c-4509-4738-9dce-e4434686edc0","keyword":"晶胞参数","originalKeyword":"晶胞参数"},{"id":"e21a10ca-a288-4239-9b95-a95ea2c68f7c","keyword":"分配系数","originalKeyword":"分配系数"}],"language":"zh","publisherId":"gsytb200001011","title":"KTNNP晶体生长研究","volume":"19","year":"2000"}],"totalpage":1149,"totalrecord":11489}