{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"采用新型sol-gel技术在Pt/Ti/SiO2/Si基片上制备出了厚度为2~60μm的PZT铁电厚膜材料;研究了PZT厚膜的结构及其介电、铁电性能.XRD谱分析显示,PZT厚膜呈现出纯钙钛矿相结构,无焦绿石相存在.SEM电镜照片显示,PZT膜厚均匀一致,无裂纹、高致密.厚度为50μm的PZT厚膜的介电常数为860,介电损耗为0.03,剩余极化强度是25μC/cm2,矫顽场是40kV/cm.","authors":[{"authorName":"夏冬林","id":"435c5bf6-b258-4398-9a93-d275a7f11c84","originalAuthorName":"夏冬林"},{"authorName":"刘梅冬","id":"d2d080fa-1fd3-4a49-b32f-e6074c0485a8","originalAuthorName":"刘梅冬"},{"authorName":"曾亦可","id":"1276355a-e706-4baf-b124-f64238c32c39","originalAuthorName":"曾亦可"},{"authorName":"李军","id":"1e97b1bc-2120-4153-80ee-9c568b6da5ec","originalAuthorName":"李军"},{"authorName":"黄焱球","id":"fc404e17-213c-4bd8-8fa3-96f50e5c1311","originalAuthorName":"黄焱球"},{"authorName":"刘少波","id":"f7b9116e-313e-4a14-8141-5223f0ce3b2a","originalAuthorName":"刘少波"}],"doi":"10.3321/j.issn:1000-324X.2001.06.020","fpage":"1156","id":"ebb5a939-01d2-4023-b964-3dc12ed33e17","issue":"6","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"3e403a8a-97ab-4c34-b8d2-a66bdc1f618b","keyword":"PZT厚膜","originalKeyword":"PZT厚膜"},{"id":"421df57b-ffa7-4652-ac34-43c68c4abb71","keyword":"新型sol-gel技术","originalKeyword":"新型sol-gel技术"},{"id":"28c1ab3f-3856-4de0-a200-cba126b50410","keyword":"介电性能","originalKeyword":"介电性能"},{"id":"9b57518b-51b2-4a0d-968f-02217c7539ed","keyword":"铁电性能","originalKeyword":"铁电性能"}],"language":"zh","publisherId":"wjclxb200106020","title":"新型SOl-Gel技术PZT铁电厚膜的制备及电学性能研究","volume":"16","year":"2001"},{"abstractinfo":"以钡、锶和锰醋酸盐为原料,采用新型溶胶-凝胶法制备锰掺杂4%mol、Ba/Sr分别为60/40、65/35和70/30的纳米粉体,均匀分散于组分相同的BST溶胶中,形成稳定的厚膜先体凝胶.浓度0.4mol/L钛酸钡凝胶薄膜种子层,作为不同组分厚膜之间的中间夹层.利用旋转涂覆工艺在LNO/Pt/Ti/SiO2/Si复合底电极上,制备出厚度约为6~10μm的BST介电增强型夹层厚膜.XRD测试结果表明,650℃热处理2h后的夹层厚膜为单一钙钛矿相,750℃热处理后2h的夹层厚膜在室温、环境温度25℃、频率1kHz下相对介电常数εγ和介质损耗tanδ分别约为1200和0.03,室温25℃附近较宽范围介温变化率>1.2%/℃,BST夹层厚膜无裂纹出现,表面平整,致密,是制备大阵列非制冷红外焦平面阵列(UFPA)的优选材料.","authors":[{"authorName":"范茂彦","id":"6d289567-ab04-4cbf-a45d-9f3afd582df6","originalAuthorName":"范茂彦"},{"authorName":"姜胜林","id":"6fe9b874-f087-4f89-b2af-0a917271bbbb","originalAuthorName":"姜胜林"},{"authorName":"谢甜甜","id":"144fb26d-a9ba-486d-913b-a2289e378375","originalAuthorName":"谢甜甜"},{"authorName":"张洋洋","id":"80fb4070-4b3c-4286-b59b-fe5ea413d499","originalAuthorName":"张洋洋"},{"authorName":"张丽芳","id":"4bfdb0bd-8f19-4a0a-b4aa-5a6e4c28240b","originalAuthorName":"张丽芳"}],"doi":"","fpage":"1104","id":"7625d9a3-cffd-415a-97a4-2aacd91d4dc0","issue":"7","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"ba910be8-2ea1-4575-8708-360f0d1178da","keyword":"红外","originalKeyword":"红外"},{"id":"dbbb6142-f656-41a9-a583-55f80f569123","keyword":"新型sol-gel技术","originalKeyword":"新型sol-gel技术"},{"id":"c9ad068b-a613-4cc2-92f5-db0f412ed3d9","keyword":"LNo/Pt复合底电极","originalKeyword":"LNo/Pt复合底电极"},{"id":"96b78864-6585-470b-b2e3-a76b525dfb0a","keyword":"夹层厚膜","originalKeyword":"夹层厚膜"},{"id":"0a242ca4-2ab1-4723-b5b5-a28a7181cc56","keyword":"介电增强","originalKeyword":"介电增强"}],"language":"zh","publisherId":"gncl200907014","title":"非制冷红外探测器夹层厚膜工艺及介电性能研究","volume":"40","year":"2009"},{"abstractinfo":"采用新型sol-gel技术在 Pt/Ti/SiO2/Si基片上制备出了厚度为 2~60μm的PZT铁 电厚膜材料;研究了PZT厚膜的结构及其介电、铁电性能.XRD谱分析显示,PZT厚膜 呈现出纯钙钛矿相结构,无焦绿石相存在.SEM电镜照片显示,PZT膜厚均匀一致,无裂 纹、高致密.厚度为50μm的PZT厚膜的介电常数为860,介电损耗为0.03,剩余极化强度 是25μC/cm.矫顽场是40kV/cm.","authors":[{"authorName":"夏冬林","id":"09667ae8-0eae-46c1-bee0-5595770ac319","originalAuthorName":"夏冬林"},{"authorName":"刘梅冬","id":"656254de-856e-4710-8207-eafadccf795d","originalAuthorName":"刘梅冬"},{"authorName":"曾亦可","id":"e8a89399-2492-419e-8a12-4c28151b3670","originalAuthorName":"曾亦可"},{"authorName":"李军","id":"7c2ef6cd-6f0f-4948-96c9-543526c810a6","originalAuthorName":"李军"},{"authorName":"黄焱球","id":"48b33db2-2053-4f27-a536-936e4d8f2246","originalAuthorName":"黄焱球"},{"authorName":"刘少波","id":"039144d0-25bd-4d9f-bb5c-2d6503a300b6","originalAuthorName":"刘少波"}],"categoryName":"|","doi":"","fpage":"1156","id":"af487ea6-b1a0-4fa8-b1ca-fed7a77a367c","issue":"6","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"b8782c32-83dd-4ea6-bfe8-f7683917006d","keyword":"PZT厚膜","originalKeyword":"PZT厚膜"},{"id":"2b827219-a407-4837-b96f-eca5696f2369","keyword":" lead zirconate titanate (PZT)","originalKeyword":" lead zirconate titanate (PZT)"},{"id":"0f3e37d7-b984-44ed-978b-922c51b47aa2","keyword":" sol-gel technique","originalKeyword":" sol-gel technique"},{"id":"c73fb305-f726-4b4f-864f-54bf396c6854","keyword":" dielectric properties","originalKeyword":" dielectric properties"}],"language":"zh","publisherId":"1000-324X_2001_6_5","title":"新型Sol-Gel技术PZT铁电厚膜的制备及电学性能研究","volume":"16","year":"2001"},{"abstractinfo":"Sol-gel法制备耐蚀涂层对提高基材的化学耐久性、防止氧化、控制腐蚀有显著的效果,有望完全替代传统材料表面腐蚀控制处理使用的毒性物质铬酸盐处理工艺,可以减轻对环境的污染,是一项可持续发展的表面处理技术.为了阐述该项技术的工艺方法及特点,综述了Sol-gel法制备技术在不同的金属基体--不锈钢、铝合金和铜合金表面中的应用现状和最新研究进展.分析了采用Sol-gel法制备耐蚀涂层可以有效地阻止腐蚀介质对基体金属材料的破坏,延长材料在实际应用环境中的使用寿命等方面的作用原理,从理论上对Sol-gel耐蚀涂层的形成机制和耐蚀机理进行了初步讨论,并对Sol-gel技术的应用前景作一简要展望.","authors":[{"authorName":"许越","id":"9df973b3-8370-41cd-ae31-c727fe02e675","originalAuthorName":"许越"},{"authorName":"李英杰","id":"dae2968a-86cb-44b0-88d9-68fba82f9e3e","originalAuthorName":"李英杰"},{"authorName":"吕祖舜","id":"e4589529-3438-4b6c-a87a-28239dbbc7ba","originalAuthorName":"吕祖舜"},{"authorName":"郭愿东","id":"2cef47d7-fb6e-409f-8672-4f8ca2a2865e","originalAuthorName":"郭愿东"},{"authorName":"杨昱","id":"c2668be1-efb4-49b7-ab1b-a419eb8c3b36","originalAuthorName":"杨昱"}],"doi":"10.3969/j.issn.1005-0299.2005.02.024","fpage":"200","id":"18ecce93-1edb-4d62-b2c1-6b0859c2d550","issue":"2","journal":{"abbrevTitle":"CLKXYGY","coverImgSrc":"journal/img/cover/CLKXYGY.jpg","id":"14","issnPpub":"1005-0299","publisherId":"CLKXYGY","title":"材料科学与工艺"},"keywords":[{"id":"ad9fa395-473e-470f-a33f-accba63d0bc0","keyword":"溶胶-凝胶涂层","originalKeyword":"溶胶-凝胶涂层"},{"id":"8c04ab25-ffbb-47da-ba8a-76c88d1cccf1","keyword":"腐蚀性能","originalKeyword":"腐蚀性能"},{"id":"6577d08b-8824-40a0-b43e-222326761fe9","keyword":"耐蚀机理","originalKeyword":"耐蚀机理"}],"language":"zh","publisherId":"clkxygy200502024","title":"Sol-gel法制备耐蚀涂层的技术及应用","volume":"13","year":"2005"},{"abstractinfo":"Sol-gel process is one of the simplest techniques to manufacture thin films. The quality of the prepared films depends on the parameters of the sol-gel process and the used technique for deposition. A great variety of the sol-gel derived films have been prepared for different applications. We present a review on the sol-gel derived coatings. The description of the process is introduced in details. Different sol-gel deposition techniques are mentioned. The optical applications of the sol-gel derived coatings are reviewed.","authors":[{"authorName":"S.M.Attia","id":"6e111931-6334-4620-8fc4-6fa80c0f7a2e","originalAuthorName":"S.M.Attia"},{"authorName":" Jue WANG","id":"0404f683-883c-42fc-9807-24cc8a754f2f","originalAuthorName":" Jue WANG"},{"authorName":" Guangming WU","id":"b890096c-9343-43eb-9f51-d9113921b8cf","originalAuthorName":" Guangming WU"},{"authorName":" Jun SHEN","id":"b853cc0f-c84a-43af-ad4c-954acc2fa74b","originalAuthorName":" Jun SHEN"},{"authorName":" Jianhua MA","id":"e858827b-2fc1-46f6-b58c-8407f2bd835b","originalAuthorName":" Jianhua MA"}],"categoryName":"|","doi":"","fpage":"211","id":"ef6cb436-a0f7-45c4-bf0f-11fb3c064dde","issue":"3","journal":{"abbrevTitle":"CLKXJSY","coverImgSrc":"journal/img/cover/JMST.jpg","id":"11","issnPpub":"1005-0302 ","publisherId":"CLKXJSY","title":"材料科学技术(英文)"},"keywords":[{"id":"5ea6c9e6-b2f4-46e0-9d4a-d2652cfd3e8c","keyword":"Sol-gel process","originalKeyword":"Sol-gel process"},{"id":"8a6166f0-1f36-4a73-9fa0-07c40fd27416","keyword":"null","originalKeyword":"null"},{"id":"d397a99a-93d2-4a8d-93f0-bd8031ede2b8","keyword":"null","originalKeyword":"null"}],"language":"en","publisherId":"1005-0302_2002_3_17","title":"Review on Sol-Gel Derived Coatings: Process, Techniques and Optical Applications","volume":"18","year":"2002"},{"abstractinfo":"采用醋酸铅、硝酸氧锆(硝酸锆)、钛酸丁酯独立稳定的前驱单体,sol-gel法旋转涂膜技术制备了PZT铁电薄膜.研究了水的添加量对溶胶形成的影响,比较了不同的溶胶浓度、膜层结构(PT/PZT/PT Sandwich)及热处理工艺条件对薄膜结构、铁电性能的影响.","authors":[{"authorName":"陈祝","id":"8ef27329-0312-4ddb-923c-2c3c9f8d56dd","originalAuthorName":"陈祝"},{"authorName":"杨邦朝","id":"50e0d9a5-0b53-4e1a-a40f-2fe394443435","originalAuthorName":"杨邦朝"},{"authorName":"杨成韬","id":"7bfe008e-5061-4fe6-a40c-fb0f53b2a2a6","originalAuthorName":"杨成韬"},{"authorName":"张树人","id":"3697f415-7581-4f0a-94ef-b776710434dc","originalAuthorName":"张树人"}],"doi":"","fpage":"417","id":"bc52503f-ce8d-4246-a574-9bc3f79fd5c4","issue":"4","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"0510abc7-60a5-411d-b6af-fe4413a4a9b8","keyword":"PZT","originalKeyword":"PZT"},{"id":"7a894dda-88c9-4516-a52f-db23a1ed0811","keyword":"sol-gel法","originalKeyword":"sol-gel法"},{"id":"4222d710-4a39-4d4d-a2ca-3f7facd794c2","keyword":"前驱单体","originalKeyword":"前驱单体"},{"id":"51dd7a42-e6b3-4ed8-a2e7-5cbc3c4c119e","keyword":"铁电薄膜","originalKeyword":"铁电薄膜"}],"language":"zh","publisherId":"gncl200404005","title":"Sol-gel独立前驱单体制备PZT铁电薄膜技术","volume":"35","year":"2004"},{"abstractinfo":"采用新型Sol-gel工艺制备了Ba0.6Sr0.4TiO3(BST)超细粉体,将BST粉体进行压制和烧结,获得了晶粒尺寸在1μm以内的BST陶瓷块体.观察了BST陶瓷块体的结晶情况并测定了其电学性能.在Sol-gel工艺中,加入了有机大分子量聚乙烯吡咯烷酮(polyvinyl pyrrolidone,PVP)制备BST前驱体.实验结果表明:PVP的加入可有效增加前驱体的稳定性和分散性,降低BST陶瓷的预烧温度约250℃,并在1200℃获得晶粒细小、致密的BST陶瓷.BST陶瓷,显示弥散相变特征.","authors":[{"authorName":"张红芳","id":"6b4b6e01-a28c-4ad5-a2e4-a73e8a31f4c1","originalAuthorName":"张红芳"},{"authorName":"张良莹","id":"3f6de8e6-4192-404b-a48d-574881572843","originalAuthorName":"张良莹"},{"authorName":"姚熹","id":"29d11f5e-1b2a-4e67-bcfd-f57165345b5a","originalAuthorName":"姚熹"}],"doi":"","fpage":"326","id":"f3faf08c-ec50-4d49-8691-4bea79c6db14","issue":"z2","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"d968582e-81dc-4f45-be06-f62457d17795","keyword":"Sol-gel法","originalKeyword":"Sol-gel法"},{"id":"edb9282c-96ed-46b3-b615-3fde58ecd171","keyword":"BST","originalKeyword":"BST"},{"id":"361f4b3c-3c07-4d8e-9ce9-b2791d78d8e1","keyword":"介电特性","originalKeyword":"介电特性"},{"id":"b57dd4bf-1897-4b36-b906-32025d3a6a9f","keyword":"弥散相变","originalKeyword":"弥散相变"}],"language":"zh","publisherId":"cldb2005z2102","title":"新型Sol-gel法制备Ba0.6Sr0.4TiO3铁电陶瓷","volume":"19","year":"2005"},{"abstractinfo":"介绍了Sol-Gel法,并对近年来Sol-Gel法制备PLZT系铁电薄膜材料的有关研究进行了分析和总结,详细介绍了Sol-Gel法制备PLZT系铁电薄膜材料的各种原料及工艺流程.","authors":[{"authorName":"侯识华","id":"30a5319b-4073-4e16-99cd-03191a777c12","originalAuthorName":"侯识华"},{"authorName":"宋世庚","id":"56401383-bf28-4cc3-8199-ec25e99b4643","originalAuthorName":"宋世庚"},{"authorName":"郑应智","id":"73bb3702-a8d1-4eec-b652-e8ecdc54ce1c","originalAuthorName":"郑应智"},{"authorName":"马远新","id":"50dd51d4-12ec-4cb0-9e79-6c5578159af3","originalAuthorName":"马远新"},{"authorName":"郑毓峰","id":"5435b0c4-e26a-4950-9904-d5eba2428fb8","originalAuthorName":"郑毓峰"}],"doi":"10.3969/j.issn.1005-0299.2002.01.027","fpage":"107","id":"62bb4c61-cba3-4320-8328-194d7609b50b","issue":"1","journal":{"abbrevTitle":"CLKXYGY","coverImgSrc":"journal/img/cover/CLKXYGY.jpg","id":"14","issnPpub":"1005-0299","publisherId":"CLKXYGY","title":"材料科学与工艺"},"keywords":[{"id":"36df90ca-0ec2-49f2-b634-943fe63b77ce","keyword":"Sol-Gel法","originalKeyword":"Sol-Gel法"},{"id":"b57e1f94-5823-4598-ab9b-ad1985dd519b","keyword":"PLZT","originalKeyword":"PLZT"},{"id":"360e6d8a-386d-4870-b836-cede8d8e210d","keyword":"铁电薄膜","originalKeyword":"铁电薄膜"}],"language":"zh","publisherId":"clkxygy200201027","title":"Sol-Gel法制备PLZT系铁电薄膜","volume":"10","year":"2002"},{"abstractinfo":"研究了利用钡、锶的碳酸盐代替醋酸盐作原料,采用新的Sol-gel技术制备Ba1-xSrxTiO3(BST)铁电薄膜的技术.采用碳酸钡、碳酸锶和钛酸四丁酯作原料配制BST溶胶;通过TG/DTA分析确定了BST薄膜的制膜工艺;使用XRD、SEM、AFM技术分析了薄膜的微结构.研究结果表明,采用碳酸盐作为钡、锶的原料,用冰醋酸和乙二醇甲醚混合液作溶剂,可配制出澄清透明、能长时间放置的溶胶,用此溶胶制备出了膜厚均匀、表面光洁致密、没有裂纹的全钙钛矿相的BST薄膜;采用扫描探针显微镜的压电响应模式(PFM)观察到了BST薄膜中的具有纳米结构的a畴和c畴.","authors":[{"authorName":"李桂英","id":"7a054417-b8f3-4c6f-88d0-30aab8095b1d","originalAuthorName":"李桂英"},{"authorName":"余萍","id":"a29651fa-eee3-481b-b7ee-a8b5932c3abb","originalAuthorName":"余萍"},{"authorName":"肖定全","id":"329d182a-6ecd-4f4a-9f30-696f3c45275c","originalAuthorName":"肖定全"}],"doi":"10.3969/j.issn.1000-985X.2006.05.006","fpage":"931","id":"62b32701-3e82-4291-b8d9-1b9fe415ecff","issue":"5","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"40c62acb-b31c-4a66-af3e-2176d3789400","keyword":"BST薄膜","originalKeyword":"BST薄膜"},{"id":"5a3fc768-ef37-41b4-85a4-20e6db3526d6","keyword":"溶胶-凝胶技术","originalKeyword":"溶胶-凝胶技术"},{"id":"bd329107-154b-4c22-88e6-9d12d3f9a4ab","keyword":"微结构","originalKeyword":"微结构"},{"id":"be761dde-58a2-461b-b874-dedda4b03706","keyword":"电畴","originalKeyword":"电畴"}],"language":"zh","publisherId":"rgjtxb98200605006","title":"Ba1-xSrxTiO3薄膜的Sol-gel制备技术与微结构","volume":"35","year":"2006"},{"abstractinfo":"以乙酸铅(Pb(CH3COO)2·3H2O)、钛酸四丁酯(Ti(OC4H9)4)、硝酸锆(Zr(NO3)4·5H2O)替代锆醇盐为原料,通过在Pt/Ti/SiO2/si基片与PZT薄膜之间引入PT种子层,采用改进的sol-gel工艺制备出无裂纹,致密性好,晶粒尺寸小且分布均匀的单一钙钛矿结构的Pb(Zr0.53Ti0.47)O3铁电薄膜.实验结果表明,具有PT种子层的PZT铁电薄膜电性能较好.经600℃热处理的具有PT种子层的PZT薄膜,在1kHz测试频率下,其剩余极化强度和矫顽场分别为20μC/cm2和59kV/cm,介电常数和介电损耗分别为385和0.030.","authors":[{"authorName":"夏冬林","id":"c43acd5c-dfcd-46d0-ae69-ca8276de9580","originalAuthorName":"夏冬林"},{"authorName":"刘梅冬","id":"45cd9943-c7fa-4ee8-bfff-dec0a48973ce","originalAuthorName":"刘梅冬"},{"authorName":"赵修建","id":"0f04145e-462d-48f0-9920-19431aef5cf4","originalAuthorName":"赵修建"},{"authorName":"周学东","id":"d5303237-3f37-4ee9-8664-9269181fc149","originalAuthorName":"周学东"}],"categoryName":"|","doi":"","fpage":"354","id":"68e1bac4-c318-419f-ab72-1ce8b24a9047","issue":"2","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"4715b4f0-3cbe-4ece-9c64-9e827a0423da","keyword":"锆钛酸铅(PZT)薄膜","originalKeyword":"锆钛酸铅(PZT)薄膜"},{"id":"f5a3f9a7-d5c7-4c36-a013-aa3a68a2220b","keyword":" PT seedings","originalKeyword":" PT seedings"},{"id":"4a84495b-32cf-41ac-9c3e-ba23d6efb893","keyword":" sol-gel processing","originalKeyword":" sol-gel processing"},{"id":"e202f232-ee56-4cd2-9b10-58ee62610e4a","keyword":" rapid thermal annealing","originalKeyword":" rapid thermal annealing"},{"id":"128e479d-e83b-4c5d-b0e0-7c52177c6601","keyword":" hysteresis loop","originalKeyword":" hysteresis loop"},{"id":"d5689800-55d2-41c3-be17-aceb24a443d9","keyword":" Ⅰ-Ⅴ characteristic","originalKeyword":" Ⅰ-Ⅴ characteristic"}],"language":"zh","publisherId":"1000-324X_2004_2_30","title":"PZT铁电薄膜Sol-Gel技术制备和电性能研究","volume":"19","year":"2004"}],"totalpage":4233,"totalrecord":42321}