{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"报道了利用<span style=\"color:red\">VLS</span>生长<span style=\"color:red\">机制</span>,在NH3气氛中,由配合物GaCl3·NH3在高温下热分解反应成功制备了GaN纳米线,利用X射线衍射(XRD)、高分辨电镜(HRTEM)、X射线能谱(EDS)等分析手段对产物进行了表征,并对氮化镓纳米线的<span style=\"color:red\">VLS</span>生长机理进行了探讨.","authors":[{"authorName":"展杰","id":"8bdb25b0-1725-473a-ae52-9b221ffd1da4","originalAuthorName":"展杰"},{"authorName":"郝霄鹏","id":"e1ceba21-70d0-4f79-b01b-5bfcb361f83e","originalAuthorName":"郝霄鹏"},{"authorName":"吴拥中","id":"7e96eb0a-2fe9-42b8-9398-6b866c9bb2b9","originalAuthorName":"吴拥中"},{"authorName":"温树林","id":"7aa44c9c-d602-4d36-a416-0a2bcc3f146f","originalAuthorName":"温树林"},{"authorName":"蒋民华","id":"c2e3ae91-2e26-4c42-81d9-30eb02d68434","originalAuthorName":"蒋民华"}],"doi":"","fpage":"714","id":"5a66df99-fefe-425f-99f2-66d10321a6aa","issue":"5","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"4c801b11-48eb-430f-8d6a-d8662eafa2d5","keyword":"氮化镓","originalKeyword":"氮化镓"},{"id":"2fcc8584-ae30-4bd0-bbca-d43fc4d29573","keyword":"纳米线","originalKeyword":"纳米线"},{"id":"c3555ef8-6eaa-4197-8734-3bb1589206ed","keyword":"<span style=\"color:red\">VLS</span><span style=\"color:red\">机制</span>","originalKeyword":"VLS机制"},{"id":"b9cf9018-cf72-4a82-a9ca-1f46a29ab29a","keyword":"表征","originalKeyword":"表征"},{"id":"c2c7a3b6-fd26-4f80-8144-fd46deaf5692","keyword":"显微结构","originalKeyword":"显微结构"}],"language":"zh","publisherId":"gncl200505022","title":"配合物热分解制备氮化镓纳米线及其生长机理研究","volume":"36","year":"2005"},{"abstractinfo":"通过简单化学气相反应法,在1300℃下合成出大量SiC纳米棒产物,着重研究了Fe催化条件下该SiC纳米棒的生长<span style=\"color:red\">机制</span>.采用数码相机、立式显微镜、场发射扫描电镜、能谱分析仪、透射电镜、选区电子衍射仪、高分辨透射电镜及X射线粉末衍射仪对产物的宏观产量、微观形貌、化学成分及晶体结构进行了表征.结果表明,石墨基片上生成1层较厚的浅蓝色产物,产量达克量级,产物由均匀的纳米棒组成,直径约100nm,长达几微米,具有立方β-SiC晶体结构.基于Fe-C-Si三元合金相变原理及传统的<span style=\"color:red\">VLS</span><span style=\"color:red\">机制</span>,首次提出一种周期性的气-液-固(Periodic-<span style=\"color:red\">VLS</span>)生长模型对SiC纳米棒的形成过程进行了详细讨论.","authors":[{"authorName":"李镇江","id":"e91d0f51-6da9-4f1a-bfef-c7d3cef99385","originalAuthorName":"李镇江"},{"authorName":"高卫东","id":"4fb9fe79-9bbf-4740-9a3a-e58b23ce6864","originalAuthorName":"高卫东"},{"authorName":"孟阿兰","id":"1ec4351a-c7f9-45c3-b6a7-47f203945f5d","originalAuthorName":"孟阿兰"},{"authorName":"李迎春","id":"11dc96e3-6323-4145-883a-7fd5df13d021","originalAuthorName":"李迎春"}],"doi":"","fpage":"1549","id":"88c3baa4-da25-43c2-89fc-9dfebc4e0457","issue":"9","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"3695bfb4-2ab8-445b-8352-f6f5110f293c","keyword":"SiC纳米棒","originalKeyword":"SiC纳米棒"},{"id":"50317d1d-d7ac-45e8-9a2c-76ab1e9c34f0","keyword":"宏观产量","originalKeyword":"宏观产量"},{"id":"343d60be-5a90-4c7e-961d-4c0fe156994f","keyword":"合金相变","originalKeyword":"合金相变"},{"id":"a1c49e5b-4334-4c56-a2bc-e6883bd60369","keyword":"<span style=\"color:red\">VLS</span>","originalKeyword":"VLS"}],"language":"zh","publisherId":"gncl200909040","title":"基于Fe催化条件下周期性<span style=\"color:red\">VLS</span><span style=\"color:red\">机制</span>大量合成SiC纳米棒的研究","volume":"40","year":"2009"},{"abstractinfo":"采用化学气相沉积方法,以Ni薄膜为催化剂,CH4、SiH4为反应气体,H2为载气,成功地在Si基片上生长出β-SiC晶须.运用X射线衍射和扫描电子显微镜系统地研究了不同催化剂厚度对SiC晶须形貌、结构和化学成分的影响.","authors":[{"authorName":"陈一峰","id":"35d32ed1-bb18-496f-a954-1356676e92a8","originalAuthorName":"陈一峰"},{"authorName":"刘兴钊","id":"f092da6d-53c7-4b5e-afe0-cbacc0fbda7f","originalAuthorName":"刘兴钊"},{"authorName":"邓新武","id":"2dab71f4-f4c9-494a-8ba9-47a802f729db","originalAuthorName":"邓新武"}],"doi":"","fpage":"89","id":"c0f5f86d-16fe-4e4d-9bfa-91768cfdf11a","issue":"z1","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"bbdd6791-936c-4154-9245-503b85f772d1","keyword":"SiC","originalKeyword":"SiC"},{"id":"6943bab7-f993-4da4-ae03-68ec6d34d1ba","keyword":"化学气相沉积","originalKeyword":"化学气相沉积"},{"id":"40d00e83-86ae-4a00-9bc8-039cb5089250","keyword":"晶须","originalKeyword":"晶须"}],"language":"zh","publisherId":"cldb2010z1027","title":"<span style=\"color:red\">VLS</span><span style=\"color:red\">机制</span>生长SiC晶须研究","volume":"24","year":"2010"},{"abstractinfo":"碳化硅(SiC)是第三代宽禁带半导体材料,在高温、高频、高功率、光电子及抗辐射等方面具有巨大的应用潜力.以CH4、SiH4为反应气体,H2为载气,采用化学气相沉积法,利用气-液-固(<span style=\"color:red\">VLS</span>)生长机理,同质外延6H-SiC薄膜.结果表明,<span style=\"color:red\">VLS</span><span style=\"color:red\">机制</span>能在外延薄膜的表面有效地封闭微管,但是由于n(C)/n(Si)较大,薄膜表面存在大量的台阶.为了进一步改善薄膜表面形貌,采用\"两步法\"工艺外延SiC薄膜,在封闭微管的同时提高了表面平整度,得到了质量较好的6H-SiC外延薄膜.","authors":[{"authorName":"陈一峰","id":"b7d58b27-6a3b-4822-aed6-b110b18b61e8","originalAuthorName":"陈一峰"},{"authorName":"刘兴钊","id":"25e2b05d-b946-4c4b-ab47-318da7203999","originalAuthorName":"刘兴钊"},{"authorName":"邓新武","id":"ebb626dd-ff39-4102-b37a-cb27dcafa91c","originalAuthorName":"邓新武"}],"doi":"","fpage":"1","id":"ca7169b0-f496-4e68-a9eb-3399cb2965be","issue":"14","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"0a0d7e34-37d9-4897-86ad-228cedbb9cd7","keyword":"6H-SiC","originalKeyword":"6H-SiC"},{"id":"373a47e5-b0fd-4d20-a2f0-c473a759fd39","keyword":"同质外延","originalKeyword":"同质外延"},{"id":"7ca881f8-9b77-44ed-b97d-bc4c13cc6992","keyword":"气-液-固生长机理","originalKeyword":"气-液-固生长机理"}],"language":"zh","publisherId":"cldb201014001","title":"<span style=\"color:red\">VLS</span>同质外延6H-SiC薄膜生长的研究","volume":"24","year":"2010"},{"abstractinfo":"在1500℃、1600℃、1650℃和1750℃氩气中保温3 h,使Fe-Si在石墨基板上熔化并敷展,分别在熔层表面获得SiC颗粒层、SiC颗粒与晶须混合层、SiC晶须层和SiC腾空薄膜.XRD分析确定所有产物均为3C-SiC;TEM和SAED分析表明,SiC晶须为3C-SiC单晶,生长方向为[111].基于上述结果,提出不同温度下C与熔体中的Si经不同反应路径,生成不同形貌SiC的反应机理:低温时(≤1500℃),Fe提高了熔体中C的饱和溶解度,以液-固(LS)反应生成SiC颗粒;较高温度时(1500～1750 ℃),借助Fe的催化作用,以气-液-固(<span style=\"color:red\">VLS</span>)机理生成SiC晶须;更高温度时(≥1750℃),气-液-固(<span style=\"color:red\">VLS</span>)变得无序,生成SiC腾空连续膜.","authors":[{"authorName":"翟蕊","id":"41b41e9c-852b-427d-b091-1d05a0ccf3b0","originalAuthorName":"翟蕊"},{"authorName":"杨光义","id":"58657ad8-3400-4e20-844b-5c747a39ea16","originalAuthorName":"杨光义"},{"authorName":"吴仁兵","id":"51fd0d13-2e6d-4684-ab56-467cd09d2ed0","originalAuthorName":"吴仁兵"},{"authorName":"陈建军","id":"fae1001c-2a4b-4ab1-847e-d5fd164e6ae7","originalAuthorName":"陈建军"},{"authorName":"林晶","id":"8f7418f8-a340-44cb-bb2a-fad77597109c","originalAuthorName":"林晶"},{"authorName":"吴玲玲","id":"f8c255b9-8f43-497d-949c-bbcb67448ae3","originalAuthorName":"吴玲玲"},{"authorName":"潘颐","id":"abf40b2e-012d-46ae-9a39-4cacfa7bddb2","originalAuthorName":"潘颐"}],"doi":"10.3321/j.issn:1000-3851.2007.05.018","fpage":"97","id":"fedfffd0-4033-4e54-99fb-46d4bbc74d86","issue":"5","journal":{"abbrevTitle":"FHCLXB","coverImgSrc":"journal/img/cover/FHCLXB.jpg","id":"26","issnPpub":"1000-3851","publisherId":"FHCLXB","title":"复合材料学报"},"keywords":[{"id":"bfe9d78d-e650-4830-9040-8b6b341adf97","keyword":"SiC晶须","originalKeyword":"SiC晶须"},{"id":"46d47eca-e4e4-4741-b0d6-37dffa3a0240","keyword":"液相法","originalKeyword":"液相法"},{"id":"8511d55a-22ca-43db-b276-da75433b1a19","keyword":"<span style=\"color:red\">VLS</span>生长机理","originalKeyword":"VLS生长机理"}],"language":"zh","publisherId":"fhclxb200705018","title":"FeSi熔体中SiC晶须的<span style=\"color:red\">VLS</span>生长","volume":"24","year":"2007"},{"abstractinfo":"针对铝合金直接氮化生长AlN过程中的晶体生长过程进行分析，通过X-ray衍射和SEM观察，获得了不同生长阶段AlN晶体的生长特征，研究了铝合金直接氮化生长氮化铝的反应<span style=\"color:red\">机制</span>. 提出了一种气-液-固-固)晶体生长<span style=\"color:red\">机制</span>，简称VLSS<span style=\"color:red\">机制</span>，并着重对VLSS<span style=\"color:red\">机制</span>的实现条件、实现过程以及与传统的<span style=\"color:red\">VLS</span>晶体生长<span style=\"color:red\">机制</span>的相同点和差异进行了讨论.","authors":[{"authorName":"金海波","id":"af95939c-72c4-45ae-ada3-00c90486978d","originalAuthorName":"金海波"},{"authorName":"陈克新","id":"a7321c68-6125-4304-b95e-51b743ad56c3","originalAuthorName":"陈克新"},{"authorName":"周和平","id":"9b1b6f74-bbb6-4946-b5a8-f5aa74b04da0","originalAuthorName":"周和平"},{"authorName":"王群","id":"e8de92d3-4fae-4559-8c5e-5a7dddff1978","originalAuthorName":"王群"},{"authorName":"王文忠","id":"ea406bd9-263d-4f63-aa1f-e451af6ba593","originalAuthorName":"王文忠"}],"doi":"10.3321/j.issn:1000-324X.2000.04.010","fpage":"631","id":"98534023-0329-4c44-ba63-734ff3bd49f7","issue":"4","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"0e3b51c2-8d26-4da3-ba4e-3430cc8496f3","keyword":"铝合金","originalKeyword":"铝合金"},{"id":"fd5b2c04-3dd7-4dfe-a68a-d94cc7d199fb","keyword":"直接氮化","originalKeyword":"直接氮化"},{"id":"4996eb74-aa40-40d3-bf41-d01a40bfc552","keyword":"氮化铝","originalKeyword":"氮化铝"},{"id":"c6f3c4bc-8d2d-4096-8340-99a0dcdcc559","keyword":"生长<span style=\"color:red\">机制</span>","originalKeyword":"生长机制"}],"language":"zh","publisherId":"wjclxb200004010","title":"铝合金直接氮化生长氮化铝反应<span style=\"color:red\">机制</span>研究","volume":"15","year":"2000"},{"abstractinfo":"以β-SiAION粉料为晶种,SiC为基体,加入Si粉、AI粉和Al2O3粉在1900 K氮气气氛下合成β-SiAlON晶须,研究了晶须的显微结构、相组成和晶须增韧SiC复合材料的力学性能,并结合热力学研究了晶须的生长<span style=\"color:red\">机制</span>.结果表明:(1)以β-SiAlON粉料为诱导晶种时可以合成β-SiMON晶须材料,其生长<span style=\"color:red\">机制</span>为<span style=\"color:red\">VLS</span><span style=\"color:red\">机制</span>和VS<span style=\"color:red\">机制</span>；(2)当以<span style=\"color:red\">VLS</span><span style=\"color:red\">机制</span>生长时,晶须合成z值为1.56,直径约为200 -300nm,呈柱状和纤维状,当以VS<span style=\"color:red\">机制</span>生长时,晶须合成z值为1.76,直径为0.5～1.5 μm,呈柱状和竹节状,发育较为规则；(3)晶须相可有效提高复合材料的力学性能,相同组成的复合材料中,当β-SiAlON晶须相的含量较高时,材料可以在气孔率较高(32.1％)条件下获得了较好的抗折强度(55.2 MPa).","authors":[{"authorName":"岳昌盛","id":"4ad2c21b-2b4e-48db-9b60-ac42780131d1","originalAuthorName":"岳昌盛"},{"authorName":"彭犇","id":"f6f80476-c1db-4a30-9adc-459baffbf509","originalAuthorName":"彭犇"},{"authorName":"郭敏","id":"d8427c67-795b-4164-b941-8ed4a04f4dc2","originalAuthorName":"郭敏"},{"authorName":"张梅","id":"a04519b7-cbbd-468d-8a0f-f174d440f729","originalAuthorName":"张梅"}],"doi":"","fpage":"1181","id":"dc8f0e91-dfcf-47a3-9f32-9e94b349e995","issue":"5","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"f1c0cf84-cb95-4c70-86f2-6976611eabd5","keyword":"β-SiAlON晶须","originalKeyword":"β-SiAlON晶须"},{"id":"4d2e187e-859d-448d-b277-311220128891","keyword":"生长<span style=\"color:red\">机制</span>","originalKeyword":"生长机制"},{"id":"c716d392-9951-4fc9-8700-afeaed9cdf84","keyword":"微观结构","originalKeyword":"微观结构"},{"id":"c407fe01-27b4-49c8-8deb-03e0e3f70b84","keyword":"力学性能","originalKeyword":"力学性能"}],"language":"zh","publisherId":"rgjtxb98201105019","title":"β-SiAlON晶须的诱导合成和生长<span style=\"color:red\">机制</span>研究","volume":"40","year":"2011"},{"abstractinfo":"激励<span style=\"color:red\">机制</span>是企业人本管理的一项重要内容.文中浅析了当前企业激励<span style=\"color:red\">机制</span>存在的问题,并从物质激励、精神激励等方面结合三鑫公司的实际简述了企业激励<span style=\"color:red\">机制</span>的建立及实施.","authors":[{"authorName":"毛怀春","id":"d36df278-9eed-4410-933f-c6ef988757e9","originalAuthorName":"毛怀春"},{"authorName":"齐军管","id":"9d503025-dcc0-49dc-b9e3-a8e6a7ea752e","originalAuthorName":"齐军管"}],"doi":"10.3969/j.issn.1001-1277.2006.11.001","fpage":"1","id":"bc48b763-c28c-41e9-b68b-ffa67c43cb3b","issue":"11","journal":{"abbrevTitle":"HJ","coverImgSrc":"journal/img/cover/HJ.jpg","id":"44","issnPpub":"1001-1277","publisherId":"HJ","title":"黄金"},"keywords":[{"id":"6e43e174-3519-4980-a848-a34507d24f18","keyword":"企业","originalKeyword":"企业"},{"id":"20974dee-1eb4-4bea-8142-14562ad7441a","keyword":"人本管理","originalKeyword":"人本管理"},{"id":"6ffb6890-a508-4ce9-a3c7-19493aa2a1d2","keyword":"激励<span style=\"color:red\">机制</span>","originalKeyword":"激励机制"}],"language":"zh","publisherId":"huangj200611001","title":"浅谈企业激励<span style=\"color:red\">机制</span>","volume":"27","year":"2006"},{"abstractinfo":"<FONT face=Verdana>采用热蒸发纯Zn粉和Cd粉, 在湿反应气氛中氧化制备得到掺Cd的ZnO纳米管, 其Cd含量为3.3at%. 场发射扫描电镜(FESEM)及高分辨透射电镜(HRTEM)分析表明, 大部分纳米管外径约80~150nm, 长度达数微米, 壁厚约20nm. 通过与相同条件下制备的ZnO纳米结构的室温光致发光谱(PL) 进行对比发现, 由于Cd的掺入, Zn<SUB>1-x</SUB>Cd<SUB>x</SUB>O纳米管的紫外近带边峰(UV NBE)从3.26eV红移到3.20eV附近.分析认为，Zn<SUB>1-x</SUB>Cd<SUB>x</SUB>O纳米管遵循气液固(<span style=\"color:red\">VLS</span>)生长<span style=\"color:red\">机制</span>, 并在此基础上提出Zn<SUB>1-x</SUB>Cd<SUB>x</SUB>O纳米管生长过程, 同时指出Kirkendall效应可能对纳米管的形成起到了重要作用. </FONT>","authors":[{"authorName":"刘勃","id":"56e58305-e995-4ce8-a3d7-526aab108ee0","originalAuthorName":"刘勃"},{"authorName":"王发展","id":"9e5dde44-4564-4e85-b51f-8ff549ac1a4b","originalAuthorName":"王发展"},{"authorName":"张顾钟","id":"16451043-bbb4-4c72-8809-1c3093068880","originalAuthorName":"张顾钟"},{"authorName":"赵超","id":"353ec13e-f8d1-4c70-92bd-5674b4400392","originalAuthorName":"赵超"},{"authorName":"原思聪","id":"4100b764-ce55-4bb4-9888-912aaac540e4","originalAuthorName":"原思聪"}],"categoryName":"|","doi":"10.3724/SP.J.1077.2009.00998","fpage":"998","id":"f444d42d-ec48-40e6-81d7-4823f25c1862","issue":"5","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"9878ec65-e74b-4716-9c4d-ba727be1d405","keyword":"Zn<SUB>1-x</SUB>Cd<SUB>x</SUB>O","originalKeyword":"Zn<SUB>1-x</SUB>Cd<SUB>x</SUB>O"},{"id":"2997a589-3bb1-4c20-a950-0705b2729f61","keyword":" nanotube","originalKeyword":" nanotube"},{"id":"7009f68f-620a-4a71-9859-da76bca869bc","keyword":" fabrication","originalKeyword":" fabrication"},{"id":"aa3c4f18-a455-4a5f-91c5-995cfec1ebfa","keyword":" growth process","originalKeyword":" growth process"}],"language":"zh","publisherId":"1000-324X_2009_5_13","title":"热蒸发法制备Zn<SUB>1-x</SUB>Cd<SUB>x</SUB>O纳米管及其生长<span style=\"color:red\">机制</span>研究","volume":"24","year":"2009"},{"abstractinfo":"采用热蒸发纯Zn粉和Cd粉,在湿反应气氛中氧化制备得到掺Cd的ZnO纳米管,其Cd含量为3.3at%. 场发射扫描电镜(FESEM)及高分辨透射电镜(HRTEM)分析表明,大部分纳米管外径约80～150nm,长度达数微米,壁厚约20nm. 通过与相同条件下制备的ZnO纳米结构的室温光致发光谱(PL) 进行对比发现,由于Cd的掺入,Zn1-xCdxO纳米管的紫外近带边峰(UV NBE)从3.26eV红移到3.20eV附近.分析认为,Zn1-xCdxO纳米管遵循气液固(<span style=\"color:red\">VLS</span>)生长<span style=\"color:red\">机制</span>,并在此基础上提出Zn1-xCdxO纳米管生长过程,同时指出Kirkendall效应可能对纳米管的形成起到了重要作用.","authors":[{"authorName":"刘勃","id":"402f9e9c-ae70-44db-8fe8-ed760d6ed716","originalAuthorName":"刘勃"},{"authorName":"王发展","id":"770b0377-eb6b-4e63-8ed5-4772e3fa0dc1","originalAuthorName":"王发展"},{"authorName":"张顾钟","id":"2f2a9331-227c-4aae-a956-09e99bf1eaaf","originalAuthorName":"张顾钟"},{"authorName":"赵超","id":"d09a6908-6441-4818-8a60-986d2c854e9d","originalAuthorName":"赵超"},{"authorName":"原思聪","id":"54df653a-49c8-44fc-8fb8-d8c3905aab39","originalAuthorName":"原思聪"}],"doi":"10.3724/SP.J.1077.2009.00998","fpage":"998","id":"821d65a5-155a-4cd0-9d30-023b11209ac6","issue":"5","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"caa706ae-704c-4f0f-bfd4-138619eb87bf","keyword":"Zn1-xCdxO","originalKeyword":"Zn1-xCdxO"},{"id":"32cc4544-d51a-416c-8f57-e210f93f5298","keyword":"纳米管","originalKeyword":"纳米管"},{"id":"b6669f12-ebe2-4014-97af-ffec313fdfdd","keyword":"制备","originalKeyword":"制备"},{"id":"1279eaac-c786-444a-93c0-e6b86a6a79f5","keyword":"生长过程","originalKeyword":"生长过程"}],"language":"zh","publisherId":"wjclxb200905025","title":"热蒸发法制备Zn1-x Cdx O纳米管及其生长<span style=\"color:red\">机制</span>研究","volume":"24","year":"2009"}],"totalpage":914,"totalrecord":9133}