{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"综述了<span style=\"color:red\">VO2</span>薄膜的制备工艺,着重探讨了热处理工艺和条件对其性能的影响,并介绍了它的最新应用情况.","authors":[{"authorName":"张弛","id":"e746f7fc-90e9-4b96-b94c-21c8a3ac1ba9","originalAuthorName":"张弛"},{"authorName":"刘梅冬","id":"7ffc27d1-9a06-406e-bc3b-7f7f338db4b6","originalAuthorName":"刘梅冬"},{"authorName":"曾亦可","id":"2f20be7c-5e3c-437e-b9f7-b673133c0e1f","originalAuthorName":"曾亦可"},{"authorName":"刘少波","id":"f26994c7-f69a-44a1-8406-af9724def110","originalAuthorName":"刘少波"},{"authorName":"黄焱球","id":"3d88612a-e057-4546-ba1f-d456c7889f0f","originalAuthorName":"黄焱球"}],"doi":"","fpage":"214","id":"3cfa9892-652a-46bd-b171-ac77ded3492f","issue":"z1","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"30b8c92d-e32d-4384-a7f6-e0bc691fc01f","keyword":"<span style=\"color:red\">VO2</span>薄膜","originalKeyword":"VO2薄膜"},{"id":"c28af5a5-f0c6-4601-9f7a-ade0882e1dd5","keyword":"制备工艺","originalKeyword":"制备工艺"},{"id":"e0a4f8f2-413a-4d5d-bbe6-d28722ddbd45","keyword":"热处理","originalKeyword":"热处理"},{"id":"bea04f18-4287-4edb-b74a-2cffd9b0da54","keyword":"非制冷红外焦平面","originalKeyword":"非制冷红外焦平面"},{"id":"76788d73-e6aa-45ba-acca-a71bf9c43b83","keyword":"光阀","originalKeyword":"光阀"},{"id":"38349557-fee5-4980-bccf-ff8bafb85949","keyword":"激光器反射镜","originalKeyword":"激光器反射镜"}],"language":"zh","publisherId":"cldb2003z1066","title":"<span style=\"color:red\">VO2</span>薄膜的研究和应用进展","volume":"17","year":"2003"},{"abstractinfo":"主要介绍了<span style=\"color:red\">VO2</span>薄膜的微、宏观相变机理,阐述了溅射法制备<span style=\"color:red\">VO2</span>薄膜的优势及影响薄膜性能的一些因素,指出了今后<span style=\"color:red\">VO2</span>薄膜的研究重点.","authors":[{"authorName":"宋晶晶","id":"faed8328-25b5-414f-ba86-b6234e6bc8e2","originalAuthorName":"宋晶晶"},{"authorName":"张津","id":"cc31973b-abf2-4905-be9d-4f360b035a98","originalAuthorName":"张津"},{"authorName":"杨栋华","id":"f7792255-4fe1-4c2a-91ef-d571f7d1a8c4","originalAuthorName":"杨栋华"}],"doi":"","fpage":"112","id":"9b806516-1ef2-44a8-bef5-10d4d06293f2","issue":"z2","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"337c2d1b-4a3f-4f71-9707-c82d910b5d45","keyword":"二氧化钒","originalKeyword":"二氧化钒"},{"id":"44766e7c-f931-4361-a9b6-1fcc74952a46","keyword":"薄膜","originalKeyword":"薄膜"},{"id":"96c9ae22-27ee-4648-8126-f564e6ee880d","keyword":"溅射","originalKeyword":"溅射"},{"id":"f074b433-aa80-49e8-92c7-b35802f0cbf6","keyword":"影响因素","originalKeyword":"影响因素"}],"language":"zh","publisherId":"cldb2007z2040","title":"溅射法制备<span style=\"color:red\">VO2</span>薄膜的研究现状","volume":"21","year":"2007"},{"abstractinfo":"掺杂<span style=\"color:red\">VO2</span>薄膜是一种具有相变特性的功能材料,具有广阔的应用前景.本文综述了掺杂<span style=\"color:red\">VO2</span>薄膜的相变机理、制备方法和应用前景,并指出掺杂<span style=\"color:red\">VO2</span>薄膜的发展趋势,以期更好地探讨掺杂<span style=\"color:red\">VO2</span>薄膜的应用研究.","authors":[{"authorName":"马红萍","id":"a9840f06-da24-48b1-9913-f120ca86b170","originalAuthorName":"马红萍"}],"doi":"10.3969/j.issn.1000-985X.2003.04.017","fpage":"366","id":"6b96fd34-d3c8-4649-977c-6fc1e6c19884","issue":"4","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"35958f15-d755-417e-927d-4f58dfbffb59","keyword":"掺杂<span style=\"color:red\">VO2</span>薄膜","originalKeyword":"掺杂VO2薄膜"},{"id":"1518bbbe-f90b-4b2a-b43c-feee20411bd6","keyword":"相变机理","originalKeyword":"相变机理"},{"id":"9b477cf3-c441-40d5-8e3b-086e2714d564","keyword":"制备方法","originalKeyword":"制备方法"}],"language":"zh","publisherId":"rgjtxb98200304017","title":"掺杂<span style=\"color:red\">VO2</span>薄膜的相变机理和研究进展","volume":"32","year":"2003"},{"abstractinfo":"<span style=\"color:red\">VO2</span>是一种新型材料,在68℃左右可发生低温半导体与高温金属相之间的可逆相变.综述了V02薄膜的基本性能,介绍几种常用的<span style=\"color:red\">VO2</span>薄膜制备方法,对<span style=\"color:red\">VO2</span>薄膜的应用以及<span style=\"color:red\">VO2</span>薄膜相变温度的控制方面的研究进展进行探讨；对<span style=\"color:red\">VO2</span>薄膜的不同应用方向、未来发展趋势及研究重点进行展望.","authors":[{"authorName":"张鹏","id":"bf3dcd01-fa84-4e7e-b97e-b98919d6ae52","originalAuthorName":"张鹏"},{"authorName":"路远","id":"077fd709-7906-4eb7-99c8-5168c8e0cfa8","originalAuthorName":"路远"}],"doi":"10.3969/j.issn.1004-244X.2012.04.031","fpage":"109","id":"d48ff330-9f3c-4b3d-b69a-dbe3cdb8b2fd","issue":"4","journal":{"abbrevTitle":"BQCLKXYGC","coverImgSrc":"journal/img/cover/BQCLKXYGC.jpg","id":"4","issnPpub":"1004-244X","publisherId":"BQCLKXYGC","title":"兵器材料科学与工程   "},"keywords":[{"id":"546cea0e-0a5c-401b-bb78-c4945273e17d","keyword":"<span style=\"color:red\">VO2</span>薄膜","originalKeyword":"VO2薄膜"},{"id":"b5b11fab-fa10-4240-a5fe-8d73854da6c5","keyword":"制备方法","originalKeyword":"制备方法"},{"id":"fcbe3c58-7132-43c5-b46f-f3a4708e0b7f","keyword":"相变温度","originalKeyword":"相变温度"}],"language":"zh","publisherId":"bqclkxygc201204031","title":"<span style=\"color:red\">VO2</span>薄膜研究进展与发展趋势","volume":"35","year":"2012"},{"abstractinfo":"应用氧钒(Ⅳ)碱式碳酸铵(NH4)5[(<span style=\"color:red\">VO</span>)6(CO3)4(OH)9]·10H<span style=\"color:red\">2</span>O为前驱体,低温下在空气和氮气的混合气流中热分解,制得不同整比性、不同结晶态的纳米<span style=\"color:red\">VO2</span>粉体.研究结晶态、准结晶态和无定形纳米<span style=\"color:red\">VO2</span>粉体对气体的吸附性能.DSC.测定结果表明<span style=\"color:red\">VO2</span> 025在70.1℃出现相变并且在<span style=\"color:red\">VO</span>1.958～<span style=\"color:red\">VO</span>2.071范围内具有最大相变热.测定了不同整比VOx的晶胞参数,单斜<span style=\"color:red\">VO2</span>的晶胞体积从缺氧<span style=\"color:red\">VO2</span>到富氧<span style=\"color:red\">VO2</span>线性增加.","authors":[{"authorName":"傅群","id":"41de9e69-a930-4daa-b65d-906fa408439a","originalAuthorName":"傅群"},{"authorName":"储向峰","id":"eab4cb8f-4288-49fe-b54f-f24d44b82c2b","originalAuthorName":"储向峰"},{"authorName":"林晨","id":"fa6e383f-2314-4b11-8be8-f4b78a82d52e","originalAuthorName":"林晨"},{"authorName":"雷德铭","id":"f5c3842c-c6fe-4799-872b-bfe493b7e6f9","originalAuthorName":"雷德铭"},{"authorName":"郑臣谋","id":"46d69d72-1ab6-46b2-85e4-401df3f5f90e","originalAuthorName":"郑臣谋"}],"doi":"10.3321/j.issn:1000-324X.2004.04.010","fpage":"767","id":"350d6428-9cfa-43a8-a703-a66ae06f6160","issue":"4","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"b6ca0829-e591-44ba-be52-2c5dec98dda6","keyword":"二氧化钒纳米粉体","originalKeyword":"二氧化钒纳米粉体"},{"id":"5223b2f8-ebb1-4ffd-b44d-9afafb31f70d","keyword":"整比性","originalKeyword":"整比性"},{"id":"97aa45cc-a9fa-48d1-a717-002d0670e354","keyword":"相变热","originalKeyword":"相变热"},{"id":"279d9425-c849-4a5d-bf0b-74cc7d6f7f85","keyword":"晶胞参数","originalKeyword":"晶胞参数"}],"language":"zh","publisherId":"wjclxb200404010","title":"纳米<span style=\"color:red\">VO2</span>粉体的制备及性能特征","volume":"19","year":"2004"},{"abstractinfo":"<span style=\"color:red\">VO2</span>具有4种多晶型结构.其中,<span style=\"color:red\">VO2</span>(M)向<span style=\"color:red\">VO2</span>(R)的转变是可逆的,并伴随着光、电、磁等物理性能的急剧变化.从晶体学角度描述了具有可逆相变特性的<span style=\"color:red\">VO2</span>的晶体结构,介绍了<span style=\"color:red\">VO2</span>薄膜在可见光-红外光波段的高低温光谱研究情况及激光辐照下<span style=\"color:red\">VO2</span>薄膜的突变特性.在应用原理分析的基础上综述了<span style=\"color:red\">VO2</span>薄膜光学特性方面的最新应用情况.","authors":[{"authorName":"陈学荣","id":"8c89e3d6-2b2a-470e-8ecc-fa58fd8dd2ab","originalAuthorName":"陈学荣"},{"authorName":"胡军志","id":"1a083c5e-f761-4d1c-a158-9ff1c9fb665a","originalAuthorName":"胡军志"},{"authorName":"韩文政","id":"429d3d83-819f-4b1d-a6fc-609afa4be2a5","originalAuthorName":"韩文政"}],"doi":"","fpage":"16","id":"4e769e85-6005-489f-97b6-3829e234c4cb","issue":"11","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"d5cd0963-2dcb-4090-94fc-563eb0f449d4","keyword":"<span style=\"color:red\">VO2</span>薄膜","originalKeyword":"VO2薄膜"},{"id":"4162a1ad-614d-4bf3-b6a1-3b9592023551","keyword":"晶体结构","originalKeyword":"晶体结构"},{"id":"16918b77-0346-444e-8665-e77ed981d3b0","keyword":"光学特性","originalKeyword":"光学特性"},{"id":"bfff26ea-bdf4-4280-ae61-1367cf2c1fd4","keyword":"应用","originalKeyword":"应用"}],"language":"zh","publisherId":"cldb200711005","title":"<span style=\"color:red\">VO2</span>薄膜的结构、光学特性及其应用研究进展","volume":"21","year":"2007"},{"abstractinfo":"<span style=\"color:red\">VO2</span>是一种温感相变材料,在68℃左右它从低温半导体相向高温金属相转变,同时其光学和电学性质发生突变.通过掺杂可以调整<span style=\"color:red\">VO2</span>的相变温度,掺杂<span style=\"color:red\">VO2</span>在建筑用节能窗等方面有广阔的应用前景.综述了掺杂<span style=\"color:red\">VO2</span>粉体和掺杂<span style=\"color:red\">VO2</span>膜的制备方法和性能,讨论和分析了制备方法、掺杂工艺、基片选择与预处理、掺杂离子性质、复合掺杂离子种类对<span style=\"color:red\">VO2</span>结构和性能的影响.指出化合价大于V4+的掺杂剂能使<span style=\"color:red\">VO2</span>相变温度降低,化合价小于V4+的掺杂剂能使<span style=\"color:red\">VO2</span>相变温度升高,化合价等于V4+的掺杂剂,其离子半径大于V4+的能使<span style=\"color:red\">VO2</span>的相变温度降低,离子半径小于V4+的能使<span style=\"color:red\">VO2</span>的相变温度升高.提出了掺杂<span style=\"color:red\">VO2</span>研究中存在的问题,对掺杂<span style=\"color:red\">VO2</span>的研究趋势进行了展望.","authors":[{"authorName":"齐济","id":"1e633d37-8868-44e2-bf74-8a302c39c233","originalAuthorName":"齐济"},{"authorName":"宁桂玲","id":"6468e668-d381-4d54-a996-6461feb407ac","originalAuthorName":"宁桂玲"},{"authorName":"刘风娟","id":"76e53ba1-c7e8-49a6-9c50-21dd1227e665","originalAuthorName":"刘风娟"},{"authorName":"陈会英","id":"32c0aade-e789-45f4-bda3-c90ba49c896c","originalAuthorName":"陈会英"},{"authorName":"王承遇","id":"ee3358cd-8856-474f-90d9-c9c1de93ff34","originalAuthorName":"王承遇"}],"doi":"","fpage":"112","id":"c6458d9b-ab81-4e94-b3e4-cf92c4a8c3a6","issue":"15","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"41b6cd04-792c-460b-954f-710d711ca111","keyword":"二氧化钒","originalKeyword":"二氧化钒"},{"id":"5601c9de-ea19-48c8-bffe-61fd491afb67","keyword":"离子掺杂","originalKeyword":"离子掺杂"},{"id":"82414575-15cb-4448-b7fb-a0047ce4c1f0","keyword":"相变特性","originalKeyword":"相变特性"}],"language":"zh","publisherId":"cldb200915025","title":"掺杂<span style=\"color:red\">VO2</span>的制备方法及其对性能的影响","volume":"23","year":"2009"},{"abstractinfo":"应用氧钒(Ⅳ)碱式碳酸铵(NH<SUB>4</SUB>)<SUB>5</SUB>[(<span style=\"color:red\">VO</span>)<SUB>6</SUB>(C<SUB><span style=\"color:red\">2</span></SUB>O<SUB>3</SUB>)<SUB>4</SUB>(OH)<SUB>9</SUB>]·10H<SUB><span style=\"color:red\">2</span></SUB>O为前驱体,低温下在空气和氮气的混合气流中热分解,制得不同整比性、不同结晶态的纳米<span style=\"color:red\">VO</span><SUB><span style=\"color:red\">2</span></SUB>粉体。研究结晶态、准结晶态和无定形纳米<span style=\"color:red\">VO</span><SUB><span style=\"color:red\">2</span></SUB>粉体对气体的吸附性能。DSC测定结果表明<span style=\"color:red\">VO</span><SUB>2.025</SUB>在70.1℃出现相变并且在<span style=\"color:red\">VO</span><SUB>1.958</SUB>-<span style=\"color:red\">VO</span><SUB>2.071</SUB>范围内具有最大相变热。测定了不同整比<span style=\"color:red\">VO</span><EM><SUB>x</SUB></EM>的晶胞参数,单斜<span style=\"color:red\">VO</span><SUB><span style=\"color:red\">2</span></SUB>的晶胞体积从缺氧<span style=\"color:red\">VO</span><SUB><span style=\"color:red\">2</span></SUB>到富氧<span style=\"color:red\">VO</span><SUB><span style=\"color:red\">2</span></SUB>线性增加。","authors":[{"authorName":"傅群","id":"1c356840-f0e3-4bd3-8e26-16a90b833bf8","originalAuthorName":"傅群"},{"authorName":"储向峰","id":"089eb172-13ef-4e95-bb9b-76ce414f41e0","originalAuthorName":"储向峰"},{"authorName":"林晨","id":"f2898a78-4cac-4118-b5a4-efbf60cadaf7","originalAuthorName":"林晨"},{"authorName":"雷德铭","id":"e53e1a4f-62c9-496b-a963-5bcc8e11eec6","originalAuthorName":"雷德铭"},{"authorName":"郑臣谋","id":"d344898a-031b-41fa-b0f6-c104708607a8","originalAuthorName":"郑臣谋"}],"categoryName":"|","doi":"","fpage":"767","id":"f31262ae-6cbf-47b0-b733-f38e8e8d3982","issue":"4","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"c1a3c7b1-f7d7-45ca-a337-d69a4addd895","keyword":"二氧化钒纳米粉体","originalKeyword":"二氧化钒纳米粉体"},{"id":"28dd801a-3eb2-4263-aa1e-e49f968f97c6","keyword":" stoichiometry","originalKeyword":" stoichiometry"},{"id":"71d58d91-c16d-42e3-ae6b-10b5b78bc97f","keyword":" phase transition heat","originalKeyword":" phase transition heat"},{"id":"cfe1502c-0329-49f4-b65b-cf0322bbd20f","keyword":" unit-cell parameter","originalKeyword":" unit-cell parameter"}],"language":"zh","publisherId":"1000-324X_2004_4_31","title":"纳米<span style=\"color:red\">VO</span><SUB><span style=\"color:red\">2</span></SUB>粉体的制备及性能特征","volume":"19","year":"2004"},{"abstractinfo":"理论上计算了<span style=\"color:red\">VO2</span>薄膜点阵常数的变化及杂质对<span style=\"color:red\">VO2</span>薄膜晶体中键长的影响,研究了K、Na、Fe、Si等多种杂质离子时<span style=\"color:red\">VO2</span>晶体点阵常数和键长的影响.结果表明,杂质使<span style=\"color:red\">VO2</span>薄膜晶体中的键长伸长,点阵常数增大,晶体结构稳定性降低,电阻突变温度降低,电阻突变数量级减小.","authors":[{"authorName":"马兰","id":"3ea90589-774e-4651-9adf-4855f2a4d0b0","originalAuthorName":"马兰"},{"authorName":"杨绍利","id":"2779e554-21eb-4ff6-b346-a0510475c46d","originalAuthorName":"杨绍利"},{"authorName":"高仕忠","id":"225088db-ee46-4127-b48a-d73609c9da2b","originalAuthorName":"高仕忠"}],"doi":"","fpage":"270","id":"9426df97-9d9b-4020-b648-1c414e1575eb","issue":"z2","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"5a319126-b880-4348-a755-f76807c63064","keyword":"<span style=\"color:red\">VO2</span>","originalKeyword":"VO2"},{"id":"618f08bd-af88-481f-bf58-21c0f243a871","keyword":"薄膜","originalKeyword":"薄膜"},{"id":"385810dc-8b5d-415f-9d9f-a7c23b92eaf2","keyword":"电阻突变性能","originalKeyword":"电阻突变性能"},{"id":"ce67b118-ee81-4b55-bcd9-45a0aff7c2c4","keyword":"杂质","originalKeyword":"杂质"},{"id":"bc797863-c209-4e54-a0cb-74fa6a0b4a28","keyword":"点阵常数","originalKeyword":"点阵常数"}],"language":"zh","publisherId":"cldb2010z2074","title":"多种杂质对<span style=\"color:red\">VO2</span>薄膜电阻突变性能的影响","volume":"24","year":"2010"},{"abstractinfo":"采用一种制备掺杂纳米<span style=\"color:red\">VO2</span>粉体的新方法获得掺Mo纳米<span style=\"color:red\">VO2</span>粉体.用XRD,TEM,XPS手段对掺杂纳米<span style=\"color:red\">VO2</span>的结构进行了表征,并研究了掺杂<span style=\"color:red\">VO2</span>的相变特性.结果表明,所制备的纳米<span style=\"color:red\">VO2</span>的尺寸约为26 nm,形貌呈近球形.掺入的Mo以Mo+6的形式存在于<span style=\"color:red\">VO2</span>的晶格中,形成V1-xMoxO<span style=\"color:red\">2</span>固溶体.掺杂纳米<span style=\"color:red\">VO2</span>粉体的电阻随温度的变化具有明显的开关特性.随掺入Mo含量的增加,<span style=\"color:red\">VO2</span>的相变温度呈线性下降,在6%MoO3的掺入量时,相变温度降为45℃.","authors":[{"authorName":"黄维刚","id":"b2045600-760d-4947-b0e7-ed46dfd4bd56","originalAuthorName":"黄维刚"},{"authorName":"林华","id":"ec1c58c8-5054-4ddc-82c6-a2d7f8586a1d","originalAuthorName":"林华"},{"authorName":"范樵乔","id":"cc84db31-142a-4e41-81ae-e70f34783929","originalAuthorName":"范樵乔"},{"authorName":"涂铭旌","id":"9687de50-11cb-42db-934d-77db8a596e11","originalAuthorName":"涂铭旌"}],"doi":"","fpage":"1554","id":"12aa992b-8867-44ff-b2aa-26e0fbe8aa83","issue":"10","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"502cfe44-31a8-4525-8908-91fa3d0a63c1","keyword":"纳米材料","originalKeyword":"纳米材料"},{"id":"2d677d20-94dc-4feb-87a6-5d9b49bdd5fa","keyword":"二氧化钒","originalKeyword":"二氧化钒"},{"id":"e58519a8-7b8c-4915-aa9a-91d384590734","keyword":"热致相变","originalKeyword":"热致相变"},{"id":"288e2822-0449-453d-932b-99834015cf28","keyword":"掺杂","originalKeyword":"掺杂"}],"language":"zh","publisherId":"xyjsclygc200610010","title":"掺Mo纳米<span style=\"color:red\">VO2</span>粉体的相变特性研究","volume":"35","year":"2006"}],"totalpage":8105,"totalrecord":81045}