{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"基于密度泛函理论,采用广义梯度近似下的第一性原理投影缀加波赝势方法,系统的研究了单<span style=\"color:red\">空位</span>(双<span style=\"color:red\">空位</span>)<span style=\"color:red\">缺陷</span>对锯齿型硅纳米带电子结构和磁性的影响.结果表明:不同位置的单原子<span style=\"color:red\">空位</span>(双原子<span style=\"color:red\">空位</span>)锯齿型硅纳米带,结构弛豫后,都能得到一个九边环(八边环),同类<span style=\"color:red\">缺陷</span>更容易在锯齿型硅纳米带的边缘区域形成;与完整的锯齿型硅纳米带相比,中心位置含<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>(单原子或双原子<span style=\"color:red\">空位</span>)的锯齿型硅纳米带由原有的反铁磁半导体转变为反铁磁金属;非中心位置含<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>(单原子或双原子<span style=\"color:red\">空位</span>)的锯齿型硅纳米带则具有铁磁态金属性, 在远离<span style=\"color:red\">缺陷</span>的纳米带边缘硅原子上局域的分布着差分电荷密度,这使得锯齿型硅纳米带在自旋电子学领域拥有可观的应用前景.","authors":[{"authorName":"杨艳妮","id":"38d9d1c0-36f8-48fa-b466-1f2dc6fcc595","originalAuthorName":"杨艳妮"},{"authorName":"王成","id":"43f1142d-96aa-45b5-90ef-073d0ef3484a","originalAuthorName":"王成"}],"doi":"","fpage":"931","id":"25d9d774-3caa-4c45-bfa5-6c655c3d0ce0","issue":"5","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"660637e2-9e99-4fa9-a0d7-837b3a97bb6e","keyword":"硅纳米带","originalKeyword":"硅纳米带"},{"id":"5515fffe-ea07-436d-bcb6-676fc502f91f","keyword":"<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>","originalKeyword":"空位缺陷"},{"id":"8ba2e866-2b4d-4f03-9a45-66ed9dfaf948","keyword":"电子结构","originalKeyword":"电子结构"},{"id":"3452beaf-4440-4853-97a2-b5bfd5c79151","keyword":"第一性原理","originalKeyword":"第一性原理"}],"language":"zh","publisherId":"rgjtxb98201705033","title":"<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>对锯齿型硅纳米带电子结构和磁性的影响","volume":"46","year":"2017"},{"abstractinfo":"采用密度泛函理论方法研究硫<span style=\"color:red\">空位</span>和铁<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>对氢氧根和羟基钙在黄铁矿表面吸附的影响.计算结果表明,铁<span style=\"color:red\">空位</span>能减弱氢氧根的吸附,硫<span style=\"color:red\">空位</span>能促进氢氧根的吸附,而铁<span style=\"color:red\">空位</span>和硫<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>都能增强羟基钙在黄铁矿表面的吸附.氢氧根在硫<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>形成的活性铁原子上的吸附能力比在铁<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>形成的活性硫原子上的吸附能力强.对于羟基钙分子,在硫<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>存在的情况下氧原子与黄铁矿表面铁原子成键,在铁<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>存在的情况下钙原子与周围的硫原子发生作用,从而促进了钙原子在黄铁矿表面<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>处的吸附.","authors":[{"authorName":"陈建华","id":"bbca3807-78fa-4ddb-b251-4d336b0c548b","originalAuthorName":"陈建华"},{"authorName":"李玉琼","id":"f6f136ac-02f6-4151-abbc-1be0813136a9","originalAuthorName":"李玉琼"},{"authorName":"衷水平","id":"94aafe86-4854-4a89-8551-0562653112eb","originalAuthorName":"衷水平"},{"authorName":"郭进","id":"c0abf954-9b45-4707-8caf-d805f4ace5df","originalAuthorName":"郭进"}],"doi":"","fpage":"859","id":"eb6902ee-95a4-4d6d-b1fd-e6ae45700395","issue":"3","journal":{"abbrevTitle":"ZGYSJSXB","coverImgSrc":"journal/img/cover/ZGYSJSXB.jpg","id":"88","issnPpub":"1004-0609","publisherId":"ZGYSJSXB","title":"中国有色金属学报"},"keywords":[{"id":"ddc66178-9982-4cc7-9278-feb1d5b2e9a2","keyword":"黄铁矿表面","originalKeyword":"黄铁矿表面"},{"id":"7e950261-6f40-4bba-aad5-b272309710a0","keyword":"<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>","originalKeyword":"空位缺陷"},{"id":"54ca4cad-5d82-4c36-b54c-987c0ba27478","keyword":"吸附","originalKeyword":"吸附"},{"id":"d924ed73-dbc2-4784-910d-49fb953d0586","keyword":"浮选","originalKeyword":"浮选"}],"language":"zh","publisherId":"zgysjsxb201303037","title":"含<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>黄铁矿(100)表面吸附氢氧根和羟基钙的量子化学研究","volume":"","year":"2013"},{"abstractinfo":"基于密度泛函理论(DFT)的第一性原理计算方法,研究了单硫<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>扶手椅型二硫化钼纳米带(AMoS2NR)的结构与电子性质.结果表明,优化的AMoS2NR纳米带边缘上Mo原子较S原子向纳米带内侧收缩;引入<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>后,边缘上Mo原子向纳米带内侧收缩加剧,稳定性降低;<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>纳米带相比完整纳米带,带隙减小;同时,<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>处原子部分态密度降低,相应的能带线分布稀疏.","authors":[{"authorName":"林春丹","id":"4152db7c-e022-4f33-81f7-8fe763b67a91","originalAuthorName":"林春丹"},{"authorName":"赵红伟","id":"6d7c18ea-a666-4b69-8d76-1439fc4a5eb0","originalAuthorName":"赵红伟"},{"authorName":"杨振清","id":"e42d4848-d52f-4246-9352-5fdf36aa8719","originalAuthorName":"杨振清"},{"authorName":"邵长金","id":"85ac71bd-0243-4cd5-bbff-bd1e62bda41a","originalAuthorName":"邵长金"}],"doi":"","fpage":"1036","id":"152cf115-bd21-48e8-b32c-c52212e02129","issue":"4","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"1caedcf0-be00-4aee-a959-d9f2819f6877","keyword":"二硫化钼","originalKeyword":"二硫化钼"},{"id":"1273b8ad-5004-4523-a3d8-6ddd64f23820","keyword":"<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>","originalKeyword":"空位缺陷"},{"id":"797dc06f-4017-44d5-adf2-73aa9ded76c0","keyword":"电子性质","originalKeyword":"电子性质"},{"id":"c7d26e43-6fc6-4082-8032-cff2df872701","keyword":"密度泛函理论","originalKeyword":"密度泛函理论"},{"id":"1bbaaed2-6ee0-4295-95a4-c5e719e92827","keyword":"第一性原理","originalKeyword":"第一性原理"}],"language":"zh","publisherId":"rgjtxb98201504032","title":"单<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>扶手椅型MoS2纳米带结构与电子性质研究","volume":"44","year":"2015"},{"abstractinfo":"采用基于密度泛函理论(DFT)的平面波超软赝势方法,研究硫<span style=\"color:red\">空位</span>、锌<span style=\"color:red\">空位</span>以及铁和镉杂质对闪锌矿电子结构的影响,分析<span style=\"color:red\">空位</span>和杂质对闪锌矿的价键结构、能带、态密度、差分电荷密度等的影响.计算结果表明:镉杂质<span style=\"color:red\">缺陷</span>导致闪锌矿的晶胞参数变大,而硫<span style=\"color:red\">空位</span>、锌<span style=\"color:red\">空位</span>和铁杂质均使闪锌矿的晶胞参数变小;硫<span style=\"color:red\">空位</span>使闪锌矿的带隙变窄,与硫<span style=\"color:red\">空位</span>相邻的4个锌原子的电荷明显低于其他锌原子的电荷;锌<span style=\"color:red\">空位</span>使闪锌矿的带隙变宽,费米能级向低能方向偏移,与锌<span style=\"color:red\">空位</span>相邻的4个硫原子的电荷明显低于其他硫原子的电荷;铁杂质使闪锌矿的带隙变宽,并在带隙中形成一个由铁的3d轨道贡献的杂质能级,费米能级向高能方向偏移;镉杂质对闪锌矿能带结构和态密度的影响较小,在闪锌矿价带-7.5 eV处形成一个由镉的4d轨道贡献的能级,Cd-S键布居数下降,共价性减弱.","authors":[{"authorName":"陈建华","id":"4b7d6510-6402-460f-a0fc-d8c38932f7d3","originalAuthorName":"陈建华"},{"authorName":"曾小钦","id":"4541fc44-2b0e-4911-95ac-ff7025ba3020","originalAuthorName":"曾小钦"},{"authorName":"陈晔","id":"ec4e2416-71c3-4f5f-a462-b4582aa697d8","originalAuthorName":"陈晔"},{"authorName":"张辉鹏","id":"72eb2982-6a64-4c0b-ab3f-236146179618","originalAuthorName":"张辉鹏"}],"doi":"","fpage":"765","id":"d282d004-6f8d-4283-8722-33f42edfdfe0","issue":"4","journal":{"abbrevTitle":"ZGYSJSXB","coverImgSrc":"journal/img/cover/ZGYSJSXB.jpg","id":"88","issnPpub":"1004-0609","publisherId":"ZGYSJSXB","title":"中国有色金属学报"},"keywords":[{"id":"d81e294a-9444-45f2-996e-a496a40161a7","keyword":"闪锌矿","originalKeyword":"闪锌矿"},{"id":"9a3c91c6-6c55-4b3e-9486-5447b455ce31","keyword":"<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>","originalKeyword":"空位缺陷"},{"id":"ac57e9cd-8f05-4aea-b71d-c23fec2106c1","keyword":"铁杂质","originalKeyword":"铁杂质"},{"id":"4df28472-ad9d-4b1b-b799-7476248cc463","keyword":"镉杂质","originalKeyword":"镉杂质"},{"id":"77b78705-6881-4a94-9e55-370837452025","keyword":"电子结构","originalKeyword":"电子结构"},{"id":"54f84efa-b205-42e5-a214-86443ccbab79","keyword":"第一性原理","originalKeyword":"第一性原理"}],"language":"zh","publisherId":"zgysjsxb201004027","title":"含<span style=\"color:red\">空位</span>和杂质<span style=\"color:red\">缺陷</span>的闪锌矿电子结构的第一性原理计算","volume":"20","year":"2010"},{"abstractinfo":"采用基于密度泛函理论的第一性原理赝势平面波方法.考察了Mg<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>对MgH<,2>体系解氢性能的影响及微观机理.结果表明:Mg<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>的出现使MgH<,2>晶胞发生收缩,晶格产生畸变,且极大地降低了体系的结构稳定性,显著提高了体系的解氢动力学;电子结构分析表明:Mg<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>改善MgH<,2>体系解氢性能的微观机理在于体系在费米能级以下成键电子数的减少以及费米能级附近能隙的变窄.","authors":[{"authorName":"张健","id":"7b985e93-475a-4a45-8c04-1b588c6e37b7","originalAuthorName":"张健"},{"authorName":"黄雅妮","id":"c5b13f56-6d6a-40da-b846-689a0c192256","originalAuthorName":"黄雅妮"},{"authorName":"龙春光","id":"5c42049d-e846-4886-8054-a839837195ab","originalAuthorName":"龙春光"},{"authorName":"邵毅敏","id":"ec0f76fb-ddaf-4673-95e3-80a8f97eb30b","originalAuthorName":"邵毅敏"},{"authorName":"彭平","id":"c3501217-0137-4169-a2f7-d97b1f4a2e33","originalAuthorName":"彭平"},{"authorName":"周惦武","id":"720cf016-832c-487a-ac38-b305c7b19d68","originalAuthorName":"周惦武"}],"doi":"10.3969/j.issn.1001-4381.2011.05.002","fpage":"7","id":"248ff5a5-30ee-4999-b348-cd35e300a1f6","issue":"5","journal":{"abbrevTitle":"CLGC","coverImgSrc":"journal/img/cover/CLGC.jpg","id":"9","issnPpub":"1001-4381","publisherId":"CLGC","title":"材料工程"},"keywords":[{"id":"6466dea2-1728-4628-b4b3-00b664046cce","keyword":"MgH2","originalKeyword":"MgH2"},{"id":"4eb71ba3-fabc-4851-b569-101b5d591f07","keyword":"<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>","originalKeyword":"空位缺陷"},{"id":"1483ae69-3679-49ef-aaa2-84b592fecce0","keyword":"赝势平面波","originalKeyword":"赝势平面波"},{"id":"baf919a6-5e08-4758-90bd-91ca3f69d3e9","keyword":"解氢性能","originalKeyword":"解氢性能"},{"id":"21c768b9-fc88-42f8-94cd-a5f53bac7fde","keyword":"电子结构","originalKeyword":"电子结构"}],"language":"zh","publisherId":"clgc201105002","title":"Mg<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>对MgH2解氢性能影响的赝势平面波法研究","volume":"","year":"2011"},{"abstractinfo":"提出了碳碳键的断裂准则,建立了含<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>碳纳米管的有限元模型,基于此断裂准则采用有限元方法对单壁碳纳米管的断裂行为进行了模拟研究,计算得到了碳纳米管的抗拉强度和极限应变,并研究了单原子<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>对碳纳米管抗拉强度和极限应变的影响。结果表明理想单壁碳纳米管的抗拉强度约为100 GPa,极限应变约为20%。单原子<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>显著降低了碳纳米管的抗拉强度和极限应变,使抗拉强度降低了20%~30%,极限应变降低了12%~18%,这也正是碳纳米管极限强度的实验结果远低于理论预测结果的原因。","authors":[{"authorName":"张续","id":"26b3e05b-38ca-4e93-a20f-22434fb94f5c","originalAuthorName":"张续"},{"authorName":"齐乐华","id":"3423ac66-37f5-4a37-bfc0-63dd94c2f6af","originalAuthorName":"齐乐华"},{"authorName":"舒扬","id":"2a7612f1-34f9-45a3-b66a-0fd690963980","originalAuthorName":"舒扬"},{"authorName":"付前刚","id":"680b8c91-8952-4e1a-814a-61a64b0c28b7","originalAuthorName":"付前刚"},{"authorName":"李贺军","id":"fa44b687-1fa2-4c3a-b8ac-b4d172aa4150","originalAuthorName":"李贺军"}],"doi":"","fpage":"646","id":"11262648-b1b9-4b17-a883-17960a124afb","issue":"6","journal":{"abbrevTitle":"XXTCL","coverImgSrc":"journal/img/cover/XXTCL.jpg","id":"70","issnPpub":"1007-8827","publisherId":"XXTCL","title":"新型炭材料"},"keywords":[{"id":"a3847ad5-c69c-4cfb-a367-63526f43c967","keyword":"单壁碳纳米管","originalKeyword":"单壁碳纳米管"},{"id":"0e0bfbe5-2587-4fb8-a89f-d76b672b4625","keyword":"<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>","originalKeyword":"空位缺陷"},{"id":"2a638993-8378-48ac-907b-01928ba45bdc","keyword":"有限元法","originalKeyword":"有限元法"},{"id":"91a6a7fb-e2c8-4270-9d8b-46f35a42d7a9","keyword":"抗拉强度","originalKeyword":"抗拉强度"},{"id":"a1238bb7-97c4-4e71-bfff-3a39c2f69fbd","keyword":"极限应变","originalKeyword":"极限应变"}],"language":"zh","publisherId":"xxtcl201606016","title":"含<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>单壁碳纳米管断裂行为的有限元模拟","volume":"31","year":"2016"},{"abstractinfo":"采用密度泛函理论研究了<span style=\"color:red\">空位</span>和反位<span style=\"color:red\">缺陷</span>效应对四元Heusler合金CoFeTiSb电子结构的影响.结果表明,VdCo、VdFe<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>和Tisb反位<span style=\"color:red\">缺陷</span>具有负的形成能,能保持85％以上的自旋极化率,在CoFeTiSb合金工业制备过程中自发形成几率较大;VdTi、VdSo<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>和FeCo反位<span style=\"color:red\">缺陷</span>虽然费米面处自旋极化率为100％,仍保持半金属性,但正的形成能表明在制备过程中它们出现的几率较小.此外,SbCo、SbFe、SbTi、CoTi、FeTi反位<span style=\"color:red\">缺陷</span>由于具有较大的形成能和半金属性破坏,自旋极化率不同程度降低.","authors":[{"authorName":"周庭艳","id":"acfbf476-1cfd-4e05-9f1b-5741c0020dfb","originalAuthorName":"周庭艳"},{"authorName":"黄海深","id":"8363e94b-1c5d-4961-90c6-22eaf1c7c1d0","originalAuthorName":"黄海深"},{"authorName":"吴波","id":"53c6e4d8-707c-41c5-8998-2111c427e314","originalAuthorName":"吴波"},{"authorName":"杨秀德","id":"de8a4618-fd72-4cfb-a407-dfc095d6b707","originalAuthorName":"杨秀德"},{"authorName":"李平","id":"ee64fb05-51cf-4fc5-b76b-646b0f35ace3","originalAuthorName":"李平"},{"authorName":"冯雨","id":"25b9a509-7a08-40a4-b9f1-103423511bc9","originalAuthorName":"冯雨"}],"doi":"10.11896/j.issn.1005-023X.2016.16.023","fpage":"105","id":"2a419e6f-c0e1-4be8-99b2-b4d5998561d6","issue":"16","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"719e6970-70ab-4888-8ab9-db95692b85ea","keyword":"Heusler合金","originalKeyword":"Heusler合金"},{"id":"9345652a-a753-4613-ac6c-3772cecbd958","keyword":"<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>","originalKeyword":"空位缺陷"},{"id":"1a9270d1-d29e-4314-981c-a9c87132c955","keyword":"反位<span style=\"color:red\">缺陷</span>","originalKeyword":"反位缺陷"}],"language":"zh","publisherId":"cldb201616023","title":"四元Heusler合金CoFeTiSb的<span style=\"color:red\">空位</span>和反位<span style=\"color:red\">缺陷</span>效应","volume":"30","year":"2016"},{"abstractinfo":"为了研究单层MoS2中的<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>形成及其对电子结构的影响,基于密度泛函理论框架下的第一性原理,采用平面波赝势方法分别计算了单层MoS2中Mo<span style=\"color:red\">空位</span>和S<span style=\"color:red\">空位</span>的形成能、<span style=\"color:red\">空位</span>附近的晶格畸变、MoS2层中的电子分布以及态密度(DOS)和能带结构.计算结果显示,2种<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>都具有点<span style=\"color:red\">缺陷</span>特征,其附近的电子分布呈现出明显的局域化特点,且S<span style=\"color:red\">空位</span>比Mo<span style=\"color:red\">空位</span>更容易形成.通过与本征态MoS2电子结构的对比分析,发现2种<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>的存在对单层MoS2的电子结构、尤其是对导带高能量区域的能态密度会产生十分明显的影响,这些影响可能与<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>引入的<span style=\"color:red\">缺陷</span>能级有关.","authors":[{"authorName":"雷天民","id":"8c5ad0e2-58df-4ecd-a9ff-0824c9e95763","originalAuthorName":"雷天民"},{"authorName":"吴胜宝","id":"6f291684-f206-4387-9b13-27fd60bbfbaf","originalAuthorName":"吴胜宝"},{"authorName":"张玉明","id":"d8b299cc-e2f9-447a-b723-52b0eaf37159","originalAuthorName":"张玉明"},{"authorName":"刘佳佳","id":"21e77b0c-5dbc-4507-a90f-8d668a7abb41","originalAuthorName":"刘佳佳"},{"authorName":"姜海青","id":"5022155b-8f23-48a6-bf43-2bc495e900f6","originalAuthorName":"姜海青"},{"authorName":"张志勇","id":"c0289c18-0483-42ae-bac3-9bc78a16c32b","originalAuthorName":"张志勇"}],"doi":"","fpage":"608","id":"1f4324a5-27a0-4e84-ad0e-f3683b12b482","issue":"3","journal":{"abbrevTitle":"XYJS","coverImgSrc":"journal/img/cover/XYJS.jpg","id":"67","issnPpub":"0258-7076","publisherId":"XYJS","title":"稀有金属"},"keywords":[{"id":"0e88dc4b-471b-4c6a-af00-32e4ed2da2ba","keyword":"第一性原理","originalKeyword":"第一性原理"},{"id":"6e0a08c7-e20a-4d14-ac36-67567256087e","keyword":"MoS2","originalKeyword":"MoS2"},{"id":"a133ebec-8477-40ec-8b6e-4280633af0b6","keyword":"<span style=\"color:red\">空位</span>","originalKeyword":"空位"},{"id":"1acfcff4-1410-4d14-8b13-6729ac239bef","keyword":"电子结构","originalKeyword":"电子结构"}],"language":"zh","publisherId":"xyjsclygc201503018","title":"<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>对单层MoS2电子结构的影响","volume":"44","year":"2015"},{"abstractinfo":"采用非平衡分子动力学(NEME)方法及Tersoff势能函数模拟了微尺度下<span style=\"color:red\">空位</span>结构<span style=\"color:red\">缺陷</span>对单晶硅薄膜热导率的影响.结果表明,硅薄膜的热导率随<span style=\"color:red\">空位</span>浓度的增加而明显减小.当温度为300～700K时,随着温度的升高,<span style=\"color:red\">空位</span>浓度对热导率的影响以及同一<span style=\"color:red\">空位</span>浓度下温度对热导率的影响都逐渐减弱.","authors":[{"authorName":"张兴丽","id":"dd676aae-4685-43bd-b0a3-ae6fb4f9376f","originalAuthorName":"张兴丽"},{"authorName":"孙兆伟","id":"f5861fd6-8b4e-4bb0-9961-34358104265b","originalAuthorName":"孙兆伟"}],"doi":"","fpage":"1","id":"6266a055-ac1b-4c22-ab44-b68629da3b3f","issue":"12","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"dc27c6fb-9dcb-4809-94fd-0b5c517ecca7","keyword":"<span style=\"color:red\">空位</span>","originalKeyword":"空位"},{"id":"a96c761b-fae4-4a3e-bcf8-3c67fdc7d60c","keyword":"硅薄膜","originalKeyword":"硅薄膜"},{"id":"4f75aad1-ba77-4cd4-8d86-255c3f5b44e1","keyword":"分子动力学","originalKeyword":"分子动力学"},{"id":"9457763e-2ba7-4246-af9b-6c20bf396b0f","keyword":"热导率","originalKeyword":"热导率"}],"language":"zh","publisherId":"cldb201112001","title":"<span style=\"color:red\">空位</span><span style=\"color:red\">缺陷</span>对单晶硅薄膜热导率影响的分子动力学模拟研究","volume":"25","year":"2011"},{"abstractinfo":"对正电子湮灭术(PAS)应用于金刚石薄膜中检测<span style=\"color:red\">空位</span>型<span style=\"color:red\">缺陷</span>的研究现状进行了综述,对由正电子寿命谱、多普勒宽化因子等数据得到<span style=\"color:red\">空位</span>型<span style=\"color:red\">缺陷</span>的浓度与大小等信息的方法进行了归纳与总结,并对正电子技术研究金刚石膜<span style=\"color:red\">缺陷</span>尚需注意的一些问题进行了初步分析讨论.","authors":[{"authorName":"郭忠诚","id":"36c8b51f-bf64-45b8-a627-efaa090f7a1f","originalAuthorName":"郭忠诚"},{"authorName":"陈星明","id":"26552c6f-0653-4488-acd2-c49c44d9266b","originalAuthorName":"陈星明"},{"authorName":"方亮","id":"ac295ece-94d0-4f02-bae0-ab7887d52c80","originalAuthorName":"方亮"},{"authorName":"王万录","id":"1b93d876-f0f6-4186-b611-2e01dc82bfda","originalAuthorName":"王万录"},{"authorName":"廖克俊","id":"14299871-2d8f-4949-84e4-b0eba49768ce","originalAuthorName":"廖克俊"}],"doi":"","fpage":"30","id":"e6f1215c-0381-4963-a89a-12b65548093e","issue":"6","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"8ce8f45e-72ae-4a02-b89d-f6edf63ebcfb","keyword":"金刚石薄膜","originalKeyword":"金刚石薄膜"},{"id":"f071d071-aae8-4784-8d82-76acc9675edf","keyword":"正电子湮灭","originalKeyword":"正电子湮灭"},{"id":"c9604e6e-ac53-47a0-9ce9-a7be170f5d90","keyword":"<span style=\"color:red\">空位</span>","originalKeyword":"空位"},{"id":"0a63702c-75ef-4df2-bbf9-52d4fce1a88f","keyword":"<span style=\"color:red\">缺陷</span>","originalKeyword":"缺陷"}],"language":"zh","publisherId":"cldb200006015","title":"正电子湮灭术在测量金刚石膜<span style=\"color:red\">空位</span>型<span style=\"color:red\">缺陷</span>中的应用","volume":"14","year":"2000"}],"totalpage":712,"totalrecord":7112}