{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"研究了Cu/HfO2/ITO和TiN/HfO2/ITO 2种结构阻变存储器件的<span style=\"color:red\">电阻</span><span style=\"color:red\">转变</span>特性.2种结构均表现出稳定的、可重复的双极<span style=\"color:red\">电阻</span><span style=\"color:red\">转变</span>行为.Cu/HfO2/ITO器件的<span style=\"color:red\">电阻</span><span style=\"color:red\">转变</span><span style=\"color:red\">机制</span>是Cu导电细丝的形成,而对于TiN/HfO2/ITO器件,在TiN项电极和HfO2薄膜中会形成界面层,因此氧空位导电细丝的形成与断裂,是其主要的<span style=\"color:red\">电阻</span><span style=\"color:red\">转变</span><span style=\"color:red\">机制</span>.","authors":[{"authorName":"谭婷婷","id":"fce3d0d8-379e-491d-a405-6e89329e7df4","originalAuthorName":"谭婷婷"},{"authorName":"郭婷婷","id":"72654271-2344-403b-90ea-5c0c11f0dee0","originalAuthorName":"郭婷婷"},{"authorName":"李小晶","id":"4054169d-d22f-4fea-9a0f-2908cd72f299","originalAuthorName":"李小晶"},{"authorName":"陈曦","id":"a80c0d28-2730-4d89-b6f3-737a5fe52ba7","originalAuthorName":"陈曦"},{"authorName":"冯丽萍","id":"d2098050-ce10-49a6-a7da-286d235235c8","originalAuthorName":"冯丽萍"},{"authorName":"刘正堂","id":"2d81cdd4-6658-417d-a3fb-0f70b2e5d6fb","originalAuthorName":"刘正堂"}],"doi":"","fpage":"2642","id":"797dcc13-2be6-4cc6-a938-efba5f650710","issue":"11","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"ee95f8ef-06ad-4b74-97c1-befc51df4cc9","keyword":"HfO2薄膜","originalKeyword":"HfO2薄膜"},{"id":"613f7128-6b64-4dac-9802-061e8f51155a","keyword":"<span style=\"color:red\">电阻</span><span style=\"color:red\">转变</span><span style=\"color:red\">机制</span>","originalKeyword":"电阻转变机制"},{"id":"74b79b52-e315-4121-adc8-b8cba0d9b594","keyword":"金属细丝","originalKeyword":"金属细丝"},{"id":"1c77f922-6513-4850-af26-c09d6fe36848","keyword":"氧空位","originalKeyword":"氧空位"}],"language":"zh","publisherId":"xyjsclygc201511009","title":"HfO2基阻变存储器的电极效应","volume":"44","year":"2015"},{"abstractinfo":"依据前人的实验数据,运用传统计算方法,对纯铁γ-α<span style=\"color:red\">转变</span>扩散<span style=\"color:red\">机制</span>进行了检验,结果表明:完成<span style=\"color:red\">转变</span>需用时间的理论计算值与实验值有3～4个数量级的差异.根据非切变相变大多存在非共格相界的特点,由相界原子参与相变的设想提出了存在非共格相界的非切变相变\"相界与母相原子联动位移\"<span style=\"color:red\">机制</span>.运用热力学基本原理对\"联动\"和新相连续长大的条件进行了简要分析.对固态相变的分类提出了质疑并建议把\"扩散型相变\"限定为新相与母相化学成分不同的相变.","authors":[{"authorName":"侯增寿","id":"76904a3a-8f82-4877-a46c-bc41b7205b26","originalAuthorName":"侯增寿"},{"authorName":"赵兴国","id":"d6eaaee1-25a5-4b6f-ac42-59160de43969","originalAuthorName":"赵兴国"},{"authorName":"侯文义","id":"a37f0cc2-9458-4653-bac6-d4898744c997","originalAuthorName":"侯文义"},{"authorName":"梁伟","id":"964f2a94-9ab2-4533-bd71-d320ca60f3fe","originalAuthorName":"梁伟"}],"doi":"10.3969/j.issn.1009-6264.2001.04.001","fpage":"1","id":"9e3cfd61-b65a-45b6-b095-85b669808081","issue":"4","journal":{"abbrevTitle":"CLRCLXB","coverImgSrc":"journal/img/cover/CLRCLXB.jpg","id":"15","issnPpub":"1009-6264","publisherId":"CLRCLXB","title":"材料热处理学报"},"keywords":[{"id":"dee7d1b2-a967-4549-84e1-5fa6d653de92","keyword":"固态相变","originalKeyword":"固态相变"},{"id":"7a5bf5ae-c526-4c24-aa24-f8fdbd8dfe3a","keyword":"相变<span style=\"color:red\">机制</span>","originalKeyword":"相变机制"}],"language":"zh","publisherId":"jsrclxb200104001","title":"纯铁γ-α<span style=\"color:red\">转变</span><span style=\"color:red\">机制</span>求索","volume":"22","year":"2001"},{"abstractinfo":"根据纯铁相变和扩散理论建立原子的扩散模型,并根据经典的扩散理论模型对扩散相变<span style=\"color:red\">机制</span>进行验证.通过理论计算表明在温度为800℃,冷却速度在2000℃/s左右时,扩散所需要的时间比相变的时间长两个数量级,证明此温度时是由扩散所控制的.当温度在740℃时,冷却速度在5000～30000℃/s之间时,扩散所需要的时间小于相变的时间而且计算结果在同一个数量级,所以为界面控制的相变.而大于30000℃/s时,扩散所需要的时间大于相变所需的时间,因此发生马氏体相变.","authors":[{"authorName":"李峰","id":"036a6662-a045-492c-ba54-1783e6e5107b","originalAuthorName":"李峰"}],"doi":"10.3969/j.issn.1009-6264.2007.03.011","fpage":"44","id":"3d518f3b-a537-45bd-8ef5-dd1b824490bf","issue":"3","journal":{"abbrevTitle":"CLRCLXB","coverImgSrc":"journal/img/cover/CLRCLXB.jpg","id":"15","issnPpub":"1009-6264","publisherId":"CLRCLXB","title":"材料热处理学报"},"keywords":[{"id":"0caa41d8-8ff2-4203-b5f8-5964db596ac2","keyword":"块状相变","originalKeyword":"块状相变"},{"id":"e485d78c-f00c-436c-a71e-2a020e6b2cbf","keyword":"扩散","originalKeyword":"扩散"},{"id":"ca8e4bc9-870c-4bd7-babe-bf00f505fd1b","keyword":"相变<span style=\"color:red\">机制</span>","originalKeyword":"相变机制"}],"language":"zh","publisherId":"jsrclxb200703011","title":"纯铁块状<span style=\"color:red\">转变</span><span style=\"color:red\">机制</span>探索","volume":"28","year":"2007"},{"abstractinfo":"根据实验证据提出:在钢的马氏体<span style=\"color:red\">转变</span>过程中,fcc→bcc(或bct)晶格改组时所需的原子相对位置变化是通过畸变fcc奥氏体晶格内的偏位错运动实现的,其方式有两种:一种是偏位错沿(1/m)〈112〉_f/{111}_f中的一个滑移系运动导致的主剪切原子位移;另一种是不同共轭{111}_f滑移面内偏位错同时或先后开动联合造成的M=(1/n)[〈112〉_(f1)/{111}_1+〈112〉_(f2)/{111}_2]复合原子位移。由此出发提出了钢淬火时奥氏体向马氏体<span style=\"color:red\">转变</span>的偏位错滑移共轭复合原子位移<span style=\"color:red\">机制</span>,并按此<span style=\"color:red\">机制</span>对马氏体与奥氏体之间的位向关系,马氏体惯析面及淬火马氏体中的一些特有现象给出了晶体几何学的解释。","authors":[{"authorName":"林保军","id":"533fc925-e788-421b-a5ae-6a13ed3f6585","originalAuthorName":"林保军"}],"categoryName":"|","doi":"","fpage":"350","id":"d5e7ae44-5a55-4622-a1a3-db52e621de37","issue":"3","journal":{"abbrevTitle":"JSXB","coverImgSrc":"journal/img/cover/JSXB.jpg","id":"48","issnPpub":"0412-1961","publisherId":"JSXB","title":"金属学报"},"keywords":[],"language":"zh","publisherId":"0412-1961_1982_3_11","title":"钢中马氏体<span style=\"color:red\">转变</span>的位错滑移<span style=\"color:red\">机制</span>","volume":"18","year":"1982"},{"abstractinfo":"采用磁控溅射法,以ITO/Glass为衬底,制备了具有<span style=\"color:red\">电阻</span><span style=\"color:red\">转变</span>特性的HfO2薄膜.X射线光电子能谱(XPS)分析发现,薄膜中的Hf、O元素不成化学计量比,薄膜中可能存在大量氧空位.电学测试结果表明,HfO2薄膜表现出明显的双极<span style=\"color:red\">电阻</span><span style=\"color:red\">转变</span>特性,并且表现出良好的可靠性(室温下可重复测试102次以上)和稳定的保持性能(0.5 V偏压下保持104 s以上),高低阻态比值达到104.基于XPS以及电学分析,薄膜的导电过程可用与氧空位相关的空间电荷限制电流模型解释.","authors":[{"authorName":"李艳艳","id":"1671b5a4-6c76-48fb-9bf4-b56267bb3f27","originalAuthorName":"李艳艳"},{"authorName":"刘正堂","id":"0db1720d-4b96-467f-a9e8-043c4f1cfda0","originalAuthorName":"刘正堂"},{"authorName":"谭婷婷","id":"dc87d69f-1bc0-42bf-bd42-db2f37106c7d","originalAuthorName":"谭婷婷"}],"doi":"","fpage":"24","id":"85b0c6a4-598b-44bd-a43e-c0adc1c418d1","issue":"1","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"76b5061c-f4ac-45b3-80fd-397fa517007f","keyword":"磁控溅射法","originalKeyword":"磁控溅射法"},{"id":"9c4ed3cd-c770-496f-a9f3-c2b092b1a53f","keyword":"HfOx薄膜","originalKeyword":"HfOx薄膜"},{"id":"5cd61e84-da21-4e61-aed6-1d5c39ded723","keyword":"<span style=\"color:red\">电阻</span><span style=\"color:red\">转变</span>特性","originalKeyword":"电阻转变特性"},{"id":"c1acda06-f667-4e0e-becd-b22928b1d3f0","keyword":"双极性","originalKeyword":"双极性"}],"language":"zh","publisherId":"xyjsclygc201401005","title":"磁控溅射法制备HfO2薄膜及<span style=\"color:red\">电阻</span><span style=\"color:red\">转变</span>特性研究","volume":"43","year":"2014"},{"abstractinfo":"本文采用射频磁控溅射法在ITO/Glass衬底上制备了Cu/HfOx/Ti MIM结构,对其电学性能和化学成分进行了分析.结果表明,Cu/HfOx/Ti结构在不发生软击穿(forming)的情况下具有明显的双极<span style=\"color:red\">电阻</span><span style=\"color:red\">转变</span>特性,高低阻比大于10,并且具有良好的重复性与保持性.HfOx薄膜中含有大量的氧空位,<span style=\"color:red\">电阻</span><span style=\"color:red\">转变</span>过程可能与氧空位形成的导电细丝有关.","authors":[{"authorName":"李艳艳","id":"5695dc88-5a8b-4d16-bb4d-ba4802400835","originalAuthorName":"李艳艳"},{"authorName":"刘正堂","id":"fe3245f6-314a-43f3-88b6-00a859ab32d9","originalAuthorName":"刘正堂"},{"authorName":"谭婷婷","id":"3086641a-a7a5-4f60-a4c8-be88eaf64a2c","originalAuthorName":"谭婷婷"}],"doi":"","fpage":"412","id":"cced538c-219c-43f3-b712-6b8182820b66","issue":"5","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"ade74600-9c11-45d8-911f-61e8b20d8c07","keyword":"HfOx 薄膜","originalKeyword":"HfOx 薄膜"},{"id":"a9e3ce22-03da-4c57-8c34-e02d5e2c38c2","keyword":"双极<span style=\"color:red\">电阻</span><span style=\"color:red\">转变</span>特性","originalKeyword":"双极电阻转变特性"},{"id":"94d52f73-de30-478a-9775-afc560f699e1","keyword":"氧空位","originalKeyword":"氧空位"}],"language":"zh","publisherId":"gnclyqjxb201205013","title":"HfOx薄膜双极<span style=\"color:red\">电阻</span><span style=\"color:red\">转变</span>特性及其机理的研究","volume":"18","year":"2012"},{"abstractinfo":"采用脉冲激光沉积法（PLD），以Pt(111)/Ti/SiO<SUB>2</SUB>/Si为衬底，制备了具有<span style=\"color:red\">电阻</span><span style=\"color:red\">转变</span>特性的TiO<SUB>2</SUB>薄膜.X射线衍射（XRD）分析未发现明显的TiO<SUB>2</SUB>结晶峰，薄膜呈纳米晶或非晶态.扫描电子显微镜（SEM）及原子力显微镜（AFM）分析表明，TiO<SUB>2</SUB>薄膜表面平整、光滑致密.电学测试结果表明，TiO<SUB>2</SUB>薄膜具有明显的单极性<span style=\"color:red\">电阻</span><span style=\"color:red\">转变</span>特性，高低阻态比值达到10<SUP>4</SUP>.高阻态下薄膜的导电过程可用空间电荷限制电流模型解释，过程中存在软击穿现象.在此基础上，对薄膜中丝导电通道的产生及熔断过程进行了初步分析.","authors":[{"authorName":"曹逊","id":"aa4fdf4d-eb19-4184-817b-d2924a80bc0b","originalAuthorName":"曹逊"},{"authorName":"李效民","id":"2deb3e8b-f013-40bf-ad03-344f27e0f2ae","originalAuthorName":"李效民"},{"authorName":"于伟东","id":"86e4cd61-f6c0-4fbf-9062-dc13475049c5","originalAuthorName":"于伟东"},{"authorName":"张亦文","id":"2adc065d-1b36-4382-9ec4-13a5bc795068","originalAuthorName":"张亦文"}],"categoryName":"|","doi":"10.3724/SP.J.1077.2009.00049","fpage":"49","id":"94a4ef0b-c8e1-489f-9b43-53fa8f60fa0c","issue":"1","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"3f740b2f-ceca-4928-b4dc-9b0cdde0e0c1","keyword":"脉冲激光沉积法","originalKeyword":"脉冲激光沉积法"},{"id":"bf1f37c8-ce34-459d-b754-e7a5cba9cbf0","keyword":" unipolar","originalKeyword":" unipolar"},{"id":"702a0df5-0913-4f56-8eec-5b47ad0d7473","keyword":" resistive switching behaviors","originalKeyword":" resistive switching behaviors"},{"id":"b7e5c041-2934-43c4-9ae9-4fb454763d92","keyword":" titanium oxide films","originalKeyword":" titanium oxide films"}],"language":"zh","publisherId":"1000-324X_2009_1_40","title":"PLD法制备TiO<SUB>2</SUB>薄膜及<span style=\"color:red\">电阻</span><span style=\"color:red\">转变</span>特性研究","volume":"24","year":"2009"},{"abstractinfo":"采用脉冲激光沉积法(PLD),以Pt(111)/Ti/SiO2/Si为衬底,制备了具有<span style=\"color:red\">电阻</span><span style=\"color:red\">转变</span>特性的TiO2薄膜.X射线衍射(XRD)分析未发现明显的TiO2结晶峰,薄膜呈纳米晶或非晶态.扫描电子显微镜(SEM)及原子力显微镜(AFM)分析表明,TiO2薄膜表面平整、光滑致密.电学测试结果表明,TiO2薄膜具有明显的单极性<span style=\"color:red\">电阻</span><span style=\"color:red\">转变</span>特性,高低阻态比值达到104.高阻态下薄膜的导电过程可用空间电荷限制电流模型解释,过程中存在软击穿现象.在此基础上,对薄膜中丝导电通道的产生及熔断过程进行了初步分析.","authors":[{"authorName":"曹逊","id":"b5677258-4038-4bed-a730-d7f4fdf79e3b","originalAuthorName":"曹逊"},{"authorName":"李效民","id":"2af92442-b9d6-4ae0-aeaa-0c1c325b85e4","originalAuthorName":"李效民"},{"authorName":"于伟东","id":"8fcbe8cc-29d1-4bcf-86ef-4f70c83523d1","originalAuthorName":"于伟东"},{"authorName":"张亦文","id":"c15355b4-8a5d-4903-9704-0189b92599ea","originalAuthorName":"张亦文"}],"doi":"","fpage":"49","id":"b8e45832-856f-4378-b12e-96b513f2ce41","issue":"1","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"3aee98ee-56b4-4962-9023-8a9ed2263236","keyword":"脉冲激光沉积法","originalKeyword":"脉冲激光沉积法"},{"id":"d37768ea-0008-46a7-9553-5a527eb7806a","keyword":"单极性","originalKeyword":"单极性"},{"id":"04a62c28-be29-4056-a79f-d69ba5cc6c72","keyword":"<span style=\"color:red\">电阻</span><span style=\"color:red\">转变</span>特性","originalKeyword":"电阻转变特性"},{"id":"0142c7c9-a119-4eae-b0aa-75cf68add378","keyword":"TiO2薄膜","originalKeyword":"TiO2薄膜"}],"language":"zh","publisherId":"wjclxb200901010","title":"PLD法制备TiO2薄膜及<span style=\"color:red\">电阻</span><span style=\"color:red\">转变</span>特性研究","volume":"24","year":"2009"},{"abstractinfo":"利用标准的四引线方法研究了磁场平行和垂直于YBCO/MgO超导薄膜表面时的<span style=\"color:red\">电阻</span><span style=\"color:red\">转变</span>.另外,本文采用微带谐振技术研究了该超导薄膜的微波性质.我们获得了该超导薄膜在绝对零度时的穿透深度λ0=280 nm,并且计算出了该超导薄膜的表面<span style=\"color:red\">电阻</span>,结果显示在60 K,7.78 GHz时Rs=78.2μΩ;在76 K,7.77 GHz时Rs=179.8 μΩ.","authors":[{"authorName":"史力斌","id":"c08e86a3-d176-42aa-a00f-1ba76e5e5f0f","originalAuthorName":"史力斌"},{"authorName":"李明标","id":"00394189-a033-413d-a3cc-fee65fa6248f","originalAuthorName":"李明标"}],"doi":"10.3969/j.issn.1000-3258.2008.04.017","fpage":"357","id":"9afb64fe-e4e1-4c03-900c-51c904eba4ef","issue":"4","journal":{"abbrevTitle":"DWWLXB","coverImgSrc":"journal/img/cover/DWWLXB.jpg","id":"19","issnPpub":"1000-3258","publisherId":"DWWLXB","title":"低温物理学报   "},"keywords":[{"id":"08bea3ce-b496-4f06-9f48-93db3ad7ebad","keyword":"超导体","originalKeyword":"超导体"},{"id":"47f8d61e-3c53-4ae2-a3fe-10ccb74e4857","keyword":"<span style=\"color:red\">电阻</span><span style=\"color:red\">转变</span>","originalKeyword":"电阻转变"},{"id":"3d1a771b-6254-4997-a041-7002e4505920","keyword":"穿透深度","originalKeyword":"穿透深度"},{"id":"0e8c7911-238d-4533-a2f7-37243b459f67","keyword":"表面<span style=\"color:red\">电阻</span>","originalKeyword":"表面电阻"}],"language":"zh","publisherId":"dwwlxb200804017","title":"关于YBCO/MgO超导薄膜<span style=\"color:red\">电阻</span><span style=\"color:red\">转变</span>和微波性质的研究","volume":"30","year":"2008"},{"abstractinfo":"采用<span style=\"color:red\">电阻</span>炉对用电磁搅拌方法制备的半固态ＡｌＳｉ７Ｍｇ合金二次加热, 结合金相分析研究了半固态组织的<span style=\"color:red\">转变</span><span style=\"color:red\">机制</span>. 实验发现, 共晶相中的Ｓｉ相通过向α相中扩散溶解, 其形状从片层状断裂成点链状颗粒, 并随着温度升高颗粒细化球化. 片层越薄, 这一过程发生的温度越低, 速度越快. Ｓｉ溶解到一定程度后共晶部分熔化, 初生α相形状、尺寸开始变化. 树枝状α相和蔷薇花状α相球化, 但前者变大, 后者变小为原始尺寸的１／２－１／４.","authors":[{"authorName":"张奎","id":"869200c4-8dd0-414c-bef4-cf5ed6f1c80d","originalAuthorName":"张奎"},{"authorName":"张永忠","id":"5f8c7592-272b-42b4-98a8-49e46e3d5860","originalAuthorName":"张永忠"}],"categoryName":"|","doi":"","fpage":"127","id":"82b06b40-a742-4187-beb4-06b4f2fb076e","issue":"2","journal":{"abbrevTitle":"JSXB","coverImgSrc":"journal/img/cover/JSXB.jpg","id":"48","issnPpub":"0412-1961","publisherId":"JSXB","title":"金属学报"},"keywords":[{"id":"67c35fa9-1151-4b68-97ec-acabaa6301ca","keyword":"半固态铝合金","originalKeyword":"半固态铝合金"},{"id":"0a7bc1d9-89e8-42c2-b24a-d4f72fd0ed07","keyword":"null","originalKeyword":"null"},{"id":"73a3bc75-fdbf-44d5-bf3a-a1e61429dc8e","keyword":"null","originalKeyword":"null"}],"language":"zh","publisherId":"0412-1961_1999_2_19","title":"半固态AlSi7Mg合金二次加热工艺与组织<span style=\"color:red\">转变</span><span style=\"color:red\">机制</span>","volume":"35","year":"1999"}],"totalpage":2271,"totalrecord":22709}