{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"介绍了<span style=\"color:red\">InAs</span>/<span style=\"color:red\">GaAs</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span>激光器的<span style=\"color:red\">材料</span>生长,器件制备及其光学特性的研究.器件为条宽100μm,腔长1600μm未镀膜激器.室温阈值电流密度为221A/cm2,激射波长为1.08μm,连续波工作最大光功率输出为2.74W(双面),外微分效率为88%,经50oC,1000h老化,仍有>1.2W的光功率输出.","authors":[{"authorName":"钱家骏","id":"8f411838-7bf4-42a4-b807-c9e6da0937c7","originalAuthorName":"钱家骏"},{"authorName":"叶小玲","id":"1a3929af-0326-4bc3-bb94-a674ece73bfc","originalAuthorName":"叶小玲"},{"authorName":"徐波","id":"81fa792f-8013-4923-90a0-a8e111ada395","originalAuthorName":"徐波"},{"authorName":"韩勤","id":"2051c1f5-9f67-4072-85eb-5af0e2af6b07","originalAuthorName":"韩勤"},{"authorName":"陈涌海","id":"2ba73548-6658-4861-b79f-e6e77e9f3726","originalAuthorName":"陈涌海"},{"authorName":"丁鼎","id":"995dcb99-80f7-4d4e-9fac-77184a439c69","originalAuthorName":"丁鼎"},{"authorName":"梁基本","id":"96c684c6-88d3-46ed-8fd3-12d1e7858a7e","originalAuthorName":"梁基本"},{"authorName":"刘峰奇","id":"aab74820-23a6-4ff8-bf1d-61564ed63af8","originalAuthorName":"刘峰奇"},{"authorName":"张金福","id":"88eff5ac-c9cd-4351-9fa9-7b638c3e5449","originalAuthorName":"张金福"},{"authorName":"张秀兰","id":"832151e3-0d86-46b6-a62d-491f6f289405","originalAuthorName":"张秀兰"},{"authorName":"王占国","id":"fb2a75dc-0b2e-4d69-b13d-1616c151ed02","originalAuthorName":"王占国"}],"doi":"10.3969/j.issn.1007-4252.2000.03.027","fpage":"243","id":"e17de6d6-59b6-422e-aff0-63c5ded3a8ed","issue":"3","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"3fc8473f-045a-4a42-b49e-4fc06b754136","keyword":"<span style=\"color:red\">InAs</span>/<span style=\"color:red\">GaAs</span><span style=\"color:red\">应变</span><span style=\"color:red\">自组装</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span><span style=\"color:red\">材料</span>","originalKeyword":"InAs/GaAs应变自组装量子点材料"},{"id":"3e1d00c7-5c29-41d5-ba71-c0bf16522359","keyword":"<span style=\"color:red\">量子</span><span style=\"color:red\">点</span>激光器","originalKeyword":"量子点激光器"},{"id":"d96a7a9a-0db1-4bcb-8f36-dd4290270e11","keyword":"电致发光谱(EL)","originalKeyword":"电致发光谱(EL)"},{"id":"f5fd4c15-bf43-43f4-ab14-5839d41a2ad3","keyword":"MBE外延生长","originalKeyword":"MBE外延生长"}],"language":"zh","publisherId":"gnclyqjxb200003027","title":"1.08μmInAs/<span style=\"color:red\">GaAs</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span>激光器光学特性研究","volume":"6","year":"2000"},{"abstractinfo":"采用LP-MOVPE技术,在(001)InP衬底上生长的<span style=\"color:red\">InAs</span> /InP<span style=\"color:red\">自组装</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span>是无序的.为了解决这个问题,在InP衬底上先生长张<span style=\"color:red\">应变</span>的<span style=\"color:red\">GaAs</span>层,然后再生长<span style=\"color:red\">InAs</span>层,可得到有序化排列的<span style=\"color:red\">量子</span><span style=\"color:red\">点</span>.本文对张<span style=\"color:red\">应变</span><span style=\"color:red\">GaAs</span>层引入使<span style=\"color:red\">量子</span><span style=\"color:red\">点</span>有序化排列的机理进行了分析.为生长有序化、高密度、均匀性好<span style=\"color:red\">自组装</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span>提供了依据.","authors":[{"authorName":"殷景志","id":"943f5944-9134-4237-8c9a-0e8eee3aed93","originalAuthorName":"殷景志"},{"authorName":"王新强","id":"d69f4674-d7d3-475f-9f52-87f9cd893e63","originalAuthorName":"王新强"},{"authorName":"李献杰","id":"ad48bed4-1030-4c1e-8474-30d89da5a52e","originalAuthorName":"李献杰"},{"authorName":"杜国同","id":"cb0a0b5b-a247-4e6d-bd90-c575481df430","originalAuthorName":"杜国同"},{"authorName":"张树人","id":"89498b84-247a-4b99-b417-5d94066e74f3","originalAuthorName":"张树人"}],"doi":"10.3969/j.issn.1007-4252.2000.04.005","fpage":"321","id":"9ae8f450-c672-4a37-9c28-30acdf299a40","issue":"4","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"fe4dcb21-c440-4bd5-8121-ef6926a1a1bf","keyword":"<span style=\"color:red\">自组装</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span>","originalKeyword":"自组装量子点"},{"id":"cd050d6a-d260-42ce-8f51-5d0118991e0f","keyword":"有序生长","originalKeyword":"有序生长"},{"id":"1ba41a79-fc1f-48e5-a9b7-a8c095e4e8bf","keyword":"张<span style=\"color:red\">应变</span><span style=\"color:red\">GaAs</span>层","originalKeyword":"张应变GaAs层"}],"language":"zh","publisherId":"gnclyqjxb200004005","title":"张<span style=\"color:red\">应变</span><span style=\"color:red\">GaAs</span>层引入使<span style=\"color:red\">InAs</span>/InP<span style=\"color:red\">量子</span><span style=\"color:red\">点</span>有序化排列的机理研究","volume":"6","year":"2000"},{"abstractinfo":"用优化的MBE参数生长了1.3μm发光的<span style=\"color:red\">InAs</span>/<span style=\"color:red\">GaAs</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span><span style=\"color:red\">材料</span>,并制成发光二极管,对不同温度和有源区长度下样品的电致发光谱进行了细致的研究.观察到两个明显的电致发光峰,分别对应于<span style=\"color:red\">量子</span><span style=\"color:red\">点</span>基态和激发态的辐射复合发光.实验表明,由于能态填充效应的影响,适当增大<span style=\"color:red\">量子</span>点发光器件有源区长度,更有利于获得基态的光发射.这个结果提供了一种控制和调节<span style=\"color:red\">InAs</span>/<span style=\"color:red\">GaAs</span><span style=\"color:red\">量子</span>点发光二极管和激光器的工作波长的方法.","authors":[{"authorName":"孔云川","id":"00583a1b-a43a-439f-b8af-d67d2454477b","originalAuthorName":"孔云川"},{"authorName":"周大勇","id":"7b00a89e-e841-4f11-a808-0ae66225cba6","originalAuthorName":"周大勇"},{"authorName":"澜清","id":"d579277e-ef5a-4b29-88ea-33b37e01429b","originalAuthorName":"澜清"},{"authorName":"刘金龙","id":"88a9cdb1-a9c5-48d6-862c-23992a61a9a9","originalAuthorName":"刘金龙"},{"authorName":"苗振华","id":"554d4979-6cd9-4bfe-bf50-720dbac2cc73","originalAuthorName":"苗振华"},{"authorName":"封松林","id":"c2c633ee-bfba-4314-a2ee-557170d83611","originalAuthorName":"封松林"},{"authorName":"牛智川","id":"53f2056b-4f31-43f4-874e-82d63e28e6ff","originalAuthorName":"牛智川"}],"doi":"10.3969/j.issn.1000-985X.2002.06.008","fpage":"551","id":"d20a9bb1-c9b5-48ec-a89e-15c702c1c8d7","issue":"6","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"e571fbab-98ee-4cf6-98e4-56fc3ea9af99","keyword":"<span style=\"color:red\">量子</span><span style=\"color:red\">点</span>","originalKeyword":"量子点"},{"id":"6982e48a-6c5c-43fc-b568-e8bde21878e8","keyword":"电致发光","originalKeyword":"电致发光"},{"id":"b4175be1-b4ca-4a6f-83a8-532a684fe276","keyword":"发光二极管","originalKeyword":"发光二极管"},{"id":"e7c6bacc-3ef9-45de-833d-7c5b4c056b2e","keyword":"能态填充效应","originalKeyword":"能态填充效应"}],"language":"zh","publisherId":"rgjtxb98200206008","title":"1.3微米发光<span style=\"color:red\">自组</span>织<span style=\"color:red\">InAs</span>/<span style=\"color:red\">GaAs</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span>的电致发光研究","volume":"31","year":"2002"},{"abstractinfo":"用X射线双晶衍射方法测定了<span style=\"color:red\">自组</span>织生长的<span style=\"color:red\">InAs</span>/<span style=\"color:red\">GaAs</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span>的摇摆曲线,根据Takagi-Taupin方程对曲线进行了拟合.在考虑<span style=\"color:red\">量子</span><span style=\"color:red\">点</span>层晶格失配的情况下,理论曲线和实验曲线符合得很好,从而确定了<span style=\"color:red\">量子</span><span style=\"color:red\">点</span>垂直样品表面的失配度,约为4～6%,这与宏观连续体弹性理论的预测相近.结合电镜、原子力显微镜的观察结果表明对子单层沉积方法获得的<span style=\"color:red\">量子</span><span style=\"color:red\">点</span>层采用化合物构层进行拟合所得结果是合理的.","authors":[{"authorName":"刘艳美","id":"745fd323-915b-40bf-8f6b-4c9f036e2540","originalAuthorName":"刘艳美"},{"authorName":"赵宗彦","id":"bf2d8e9c-09f4-4c51-bf18-975a17793ac3","originalAuthorName":"赵宗彦"},{"authorName":"杨坤堂","id":"fd03b39a-3ee4-4fa6-98dd-f502abfba8cf","originalAuthorName":"杨坤堂"},{"authorName":"徐章程","id":"d1f0d13f-c390-4606-b3cf-70dcb525f13f","originalAuthorName":"徐章程"},{"authorName":"韩家骅","id":"e8a3b536-04ee-41e7-b8c9-c7fc9712a161","originalAuthorName":"韩家骅"}],"doi":"10.3969/j.issn.1673-2812.2003.06.022","fpage":"862","id":"e164d62d-3e63-42d5-8a0b-71d24e0c4d71","issue":"6","journal":{"abbrevTitle":"CLKXYGCXB","coverImgSrc":"journal/img/cover/CLKXYGCXB.jpg","id":"13","issnPpub":"1673-2812","publisherId":"CLKXYGCXB","title":"材料科学与工程学报"},"keywords":[{"id":"a96e4ae8-fa92-45ae-9fe9-e62f34cdd416","keyword":"<span style=\"color:red\">量子</span><span style=\"color:red\">点</span>","originalKeyword":"量子点"},{"id":"198981e5-09ac-46a5-abd4-fcf4305fb467","keyword":"<span style=\"color:red\">自组</span>织生长","originalKeyword":"自组织生长"},{"id":"71d8ab6c-796a-4b95-b56e-012edc8c8c44","keyword":"双晶衍射","originalKeyword":"双晶衍射"},{"id":"1968e9c1-f02e-46b2-851b-7e2df81b2f81","keyword":"摇摆曲线","originalKeyword":"摇摆曲线"}],"language":"zh","publisherId":"clkxygc200306022","title":"<span style=\"color:red\">自组</span>织<span style=\"color:red\">InAs</span>/<span style=\"color:red\">GaAs</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span>的X射线双晶衍射研究","volume":"21","year":"2003"},{"abstractinfo":"通过优化分子束外延生长条件,得到室温发光在1300nm低密度的<span style=\"color:red\">自组</span>织<span style=\"color:red\">InAs</span>/<span style=\"color:red\">GaAs</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span>.使用极低的<span style=\"color:red\">InAs</span>生长速率(0.001单层/秒)可以把<span style=\"color:red\">量子</span><span style=\"color:red\">点</span>的密度降低到4×106cm-2.这些结果使得<span style=\"color:red\">InAs</span>/<span style=\"color:red\">GaAs</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span>可以作为单光子源应用在未来的光纤基<span style=\"color:red\">量子</span>密码、<span style=\"color:red\">量子</span>通信中.","authors":[{"authorName":"方志丹","id":"ae11e43d-f3d4-4335-9349-62ad6e5cd8bb","originalAuthorName":"方志丹"},{"authorName":"崔碧峰","id":"738741fe-d03b-496e-8e19-4b2ed1d0b100","originalAuthorName":"崔碧峰"},{"authorName":"黄社松","id":"fffa0fbe-325b-41fc-8010-ec2478f6e12d","originalAuthorName":"黄社松"},{"authorName":"倪海桥","id":"bc1a6a38-3846-450a-82e8-6518764ff677","originalAuthorName":"倪海桥"},{"authorName":"邢艳辉","id":"75c001cb-c30c-40ac-a85d-d82b9769ed70","originalAuthorName":"邢艳辉"},{"authorName":"牛智川","id":"c1514f65-7c90-4982-82d3-6d8c14eabd47","originalAuthorName":"牛智川"}],"doi":"10.3969/j.issn.1007-4252.2008.05.012","fpage":"915","id":"f7be0a9b-16d3-4d33-ad7b-4e4b77c25938","issue":"5","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"186f6a2b-fca4-46d5-9d7c-df161d625fc3","keyword":"单光子源","originalKeyword":"单光子源"},{"id":"e1badaa4-e18a-4bc0-b034-a4bdb40a7396","keyword":"低密度","originalKeyword":"低密度"},{"id":"f9fcf41a-23d7-4fce-a790-b7cbc6b168f2","keyword":"<span style=\"color:red\">量子</span><span style=\"color:red\">点</span>","originalKeyword":"量子点"}],"language":"zh","publisherId":"gnclyqjxb200805012","title":"单光子源低密度长波长<span style=\"color:red\">InAs</span>/<span style=\"color:red\">GaAs</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span>的制备","volume":"14","year":"2008"},{"abstractinfo":"1.55微米波段<span style=\"color:red\">GaAs</span>基近红外长波长<span style=\"color:red\">材料</span>在光纤通讯,高频电路和光电集成等领域有潜在的应用价值.本文用分子束外延方法研究了<span style=\"color:red\">GaAs</span>基异变<span style=\"color:red\">InAs</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span><span style=\"color:red\">材料</span>的生长,力图实现在拓展<span style=\"color:red\">量子</span>点发光波长的同时保持或增加<span style=\"color:red\">InAs</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span>的密度.在实验中,首先优化了In0.15<span style=\"color:red\">GaAs</span>异变缓冲层的生长,研究了生长温度和退火对减少穿通位错的作用.在此基础上,优化了长波长<span style=\"color:red\">InAs</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span>的生长.最终在<span style=\"color:red\">GaAs</span>基上获得了温室发光波长在1491rim,半高宽为27.73meV,密度达到4×1010cm-2的<span style=\"color:red\">InAs</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span>.","authors":[{"authorName":"魏全香","id":"42779c37-4ab7-4d49-b5d7-22b131f3c1c7","originalAuthorName":"魏全香"},{"authorName":"王鹏飞","id":"0b43df31-17ce-477c-8a89-553f12de9454","originalAuthorName":"王鹏飞"},{"authorName":"任正伟","id":"46b070da-3d33-409d-9d9a-2468842b39b5","originalAuthorName":"任正伟"},{"authorName":"贺振宏","id":"92e2b628-fdd7-4f27-a1f1-7421c9bad345","originalAuthorName":"贺振宏"}],"doi":"","fpage":"816","id":"09e4c1cc-c286-459e-aa74-c1d42ba4b600","issue":"6","journal":{"abbrevTitle":"CLKXYGCXB","coverImgSrc":"journal/img/cover/CLKXYGCXB.jpg","id":"13","issnPpub":"1673-2812","publisherId":"CLKXYGCXB","title":"材料科学与工程学报"},"keywords":[{"id":"5a918c6d-c8c6-4004-9ea1-a989aa777a21","keyword":"异变","originalKeyword":"异变"},{"id":"f59744d9-7801-4c46-93ad-58786ba3475c","keyword":"<span style=\"color:red\">InAs</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span>","originalKeyword":"InAs量子点"},{"id":"47a452c4-fffd-4f24-b207-8c8cc675194c","keyword":"分子束外延","originalKeyword":"分子束外延"},{"id":"b0da33f8-2968-4b98-af05-caa03d8459d9","keyword":"发光波长","originalKeyword":"发光波长"}],"language":"zh","publisherId":"clkxygc201406007","title":"1.5微米波段<span style=\"color:red\">GaAs</span>基异变<span style=\"color:red\">InAs</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span>分子束外延生长","volume":"32","year":"2014"},{"abstractinfo":"采用分子束外延(MBE)法,在优化Ge衬底退火工艺的基础上,通过对比在(001)面偏＜111＞方向分别为0°、2°、4°和6°的Ge衬底上生长的<span style=\"color:red\">GaAs</span>薄膜,发现当Ge衬底的偏角为6°时有利于高质量<span style=\"color:red\">GaAs</span>薄膜的生长;通过改变迁移增强外延(MEE)的生长温度,发现在<span style=\"color:red\">GaAs</span>成核温度为375℃时,可在6°偏角的Ge衬底上获得质量最好的<span style=\"color:red\">GaAs</span>薄膜.通过摸索<span style=\"color:red\">GaAs</span>/Ge衬底上<span style=\"color:red\">InAs</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span>的生长工艺,实现了高效的<span style=\"color:red\">InAs</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span>光致发光,其性能接近<span style=\"color:red\">GaAs</span>衬底上直接生长的<span style=\"color:red\">InAs</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span>的水平.","authors":[{"authorName":"高晓强","id":"1fdfe59e-96a6-41e9-8409-221aae6129f7","originalAuthorName":"高晓强"},{"authorName":"王凯","id":"fb5b22c6-9990-4c72-9ee2-46e2bb874a35","originalAuthorName":"王凯"},{"authorName":"邓闯","id":"734309ca-280f-49be-a5fc-5eb24cc912d3","originalAuthorName":"邓闯"},{"authorName":"贺端威","id":"38c90c62-3248-418d-a8e1-52b246676411","originalAuthorName":"贺端威"}],"doi":"","fpage":"54","id":"92d7b0bf-24e5-41b5-9442-d1a979177838","issue":"2","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"fba5cea0-979a-4334-9f3c-9cff0db78704","keyword":"分子束外延","originalKeyword":"分子束外延"},{"id":"72a52932-28fa-4124-8a67-01742c7372ae","keyword":"迁移增强外延","originalKeyword":"迁移增强外延"},{"id":"66168b47-8938-4123-a8d1-5ee4f9fc2744","keyword":"<span style=\"color:red\">InAs</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span>","originalKeyword":"InAs量子点"}],"language":"zh","publisherId":"gnclyqjxb201302002","title":"Ge基<span style=\"color:red\">GaAs</span>薄膜和<span style=\"color:red\">InAs</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span>MBE生长研究","volume":"19","year":"2013"},{"abstractinfo":"在<span style=\"color:red\">GaAs</span>(100)的衬底上,采用MBE<span style=\"color:red\">自组</span>织方法生长了单层层厚分别为2和2.5 ML的<span style=\"color:red\">InAs</span>层.通过原子力显微镜(AFM)观察,证实已在<span style=\"color:red\">InAs</span>层中形成<span style=\"color:red\">量子</span><span style=\"color:red\">点</span>.采用光致发光谱及时间分辨谱对<span style=\"color:red\">InAs</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span>及浸润层开展研究和对比,分析了单层<span style=\"color:red\">InAs</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span>和浸润层中的载流子迁移过程,较好地解释了实验结果.","authors":[{"authorName":"孔令民","id":"98892f03-26cc-4c05-8608-67d3a2833625","originalAuthorName":"孔令民"},{"authorName":"蔡加法","id":"6cb621a5-a279-4358-90b5-a0597dc58614","originalAuthorName":"蔡加法"},{"authorName":"陈主荣","id":"0fdaecc3-6c37-4cd2-9d39-5b01cc625778","originalAuthorName":"陈主荣"},{"authorName":"吴正云","id":"79eba00d-1a13-418b-919d-2e61abd14ce7","originalAuthorName":"吴正云"},{"authorName":"牛智川","id":"6f1a016a-4fc8-460c-a5cb-e51c5dffcc2d","originalAuthorName":"牛智川"}],"doi":"10.3969/j.issn.1007-5461.2003.02.017","fpage":"208","id":"9dee96d3-b3d5-4cf9-bdcd-5933b11ae6e6","issue":"2","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"61d6df96-c13e-477f-82c5-f6c098778e33","keyword":"<span style=\"color:red\">InAs</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span>","originalKeyword":"InAs量子点"},{"id":"fcaffec2-4f1e-4e55-ba9e-f7d13f18d601","keyword":"浸润层","originalKeyword":"浸润层"},{"id":"6a6dee08-989b-4901-b9de-b61ba3f260f9","keyword":"时间分辨谱","originalKeyword":"时间分辨谱"}],"language":"zh","publisherId":"lzdzxb200302017","title":"<span style=\"color:red\">自组</span>织生长单层<span style=\"color:red\">InAs</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span>结构中浸润层与<span style=\"color:red\">量子</span>点发光的时间分辨谱研究","volume":"20","year":"2003"},{"abstractinfo":"采用动力学蒙特卡罗模型模拟了<span style=\"color:red\">GaAs</span><span style=\"color:red\">应变</span>弛豫图形衬底上<span style=\"color:red\">InAs</span><span style=\"color:red\">量子</span>点阵列生长早期阶段,温度对浸润层之上第一层亚单原子层阶段的影响.通过对生长表面形态、岛平均大小、岛大小分布及其标准差等方面的研究,证明了通过控制温度能够得到大小均匀、排列有序的岛阵列,这对后续<span style=\"color:red\">量子</span><span style=\"color:red\">点</span>生长的定位和尺寸控制有重要影响.","authors":[{"authorName":"宋禹忻","id":"6a6847af-e7c7-4fe3-b756-671edcabfd7e","originalAuthorName":"宋禹忻"},{"authorName":"俞重远","id":"775e7a15-5e19-45e5-be99-6a489fc7d3f9","originalAuthorName":"俞重远"},{"authorName":"刘玉敏","id":"76a60ba6-acaa-4a8a-bac1-a4ba441404c8","originalAuthorName":"刘玉敏"}],"doi":"","fpage":"2080","id":"4e1f4aac-25bd-4ac4-927d-811654f241ce","issue":"12","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"c20b575c-63f5-4efe-b165-27f7ed5d7e8a","keyword":"动力学蒙特卡罗模拟","originalKeyword":"动力学蒙特卡罗模拟"},{"id":"2cafedb2-2e4c-4ba7-a86b-fcd28350b079","keyword":"<span style=\"color:red\">量子</span><span style=\"color:red\">点</span>","originalKeyword":"量子点"},{"id":"0dd3fbd8-21c6-4f40-bfe7-62c47b8023ae","keyword":"外延生长","originalKeyword":"外延生长"}],"language":"zh","publisherId":"gncl200712045","title":"温度对<span style=\"color:red\">InAs</span>/<span style=\"color:red\">GaAs</span><span style=\"color:red\">量子</span><span style=\"color:red\">点</span>生长影响的动力学蒙特卡罗模拟","volume":"38","year":"2007"},{"abstractinfo":"研究了分子束外延生长的覆盖了1nm的InxAl1-xAs(x=0.2,O.3)和3nm的Ino2Gao8As复合应力缓冲层<span style=\"color:red\">InAs</span>/<span style=\"color:red\">GaAs</span><span style=\"color:red\">自组</span>织<span style=\"color:red\">量子</span><span style=\"color:red\">点</span>(QD)光致发光(PL)特性.加InAlAs层后PL谱红移到1.33μm,室温下基态和第一激发态间的跃迁能级差增加到86meV.高In组份的InAlAs有利于获得较长波长和较窄的半高宽(FWHM).对于覆盖复合应力缓冲层的QD不会使波长和FWHM发生显著变化,但可以使基态和第一激发态间的能级差进一步增大.这些结果归因于InAlAs能够有效的抑制In的偏析,减少应力,使QD保持较高的高度.同时,由于InAlAs具有较高的限制势垒,可以增加基态和第一激发态间的能级差.","authors":[{"authorName":"孙彦","id":"cbf84f18-0dda-46fc-8614-da0923f4e7de","originalAuthorName":"孙彦"},{"authorName":"方志丹","id":"c4c19ff7-3753-4cd4-aaec-bacc7106af25","originalAuthorName":"方志丹"},{"authorName":"龚政","id":"19e99285-fb58-4841-8b81-7cff3de7af3f","originalAuthorName":"龚政"},{"authorName":"苗振华","id":"f3a25739-9a7d-4b83-b189-b45747f99eee","originalAuthorName":"苗振华"},{"authorName":"牛智川","id":"e654239f-6013-4122-8bd2-f51fd4db658a","originalAuthorName":"牛智川"}],"doi":"10.3969/j.issn.1000-985X.2005.02.040","fpage":"384","id":"37e123c7-56a7-4cfe-a16e-33afd0a80adf","issue":"2","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"0c910f8f-7c76-4443-b69e-fb8d1b20a012","keyword":"<span style=\"color:red\">量子</span><span style=\"color:red\">点</span>","originalKeyword":"量子点"},{"id":"0f0222a7-a5be-4dca-a85d-17c83493e0cc","keyword":"应力缓冲层","originalKeyword":"应力缓冲层"},{"id":"63a22cea-5a60-4522-a10d-c24977e6976f","keyword":"半高宽","originalKeyword":"半高宽"},{"id":"213a1ba0-4825-4db9-b4d8-edb0422667bf","keyword":"光致荧光谱","originalKeyword":"光致荧光谱"}],"language":"zh","publisherId":"rgjtxb98200502040","title":"分子束外延生长的<span style=\"color:red\">InAs</span>/<span style=\"color:red\">GaAs</span><span style=\"color:red\">自组</span>织<span style=\"color:red\">量子</span>点发光特性","volume":"34","year":"2005"}],"totalpage":6765,"totalrecord":67644}