张健
,
韩继龙
,
郭策安
,
卢旭东
,
金浩
,
郭秋萍
功能材料
doi:10.3969/j.issn.1001-9731.2015.13.030
利用电弧离子镀技术,在炮钢表面沉积TiAlN和 TiAlYN 两种薄膜,研究添加1％(原子分数)Y对(Ti,Al)N薄膜氧化性能的影响。两种沉积薄膜的样品在空气中850℃下氧化10 h,用 SEM、EDAX和XRD分别分析两种薄膜的形貌、成分及相组成。结果表明,在空气中850℃下氧化10 h 后,两种薄膜的氧化产物均为 Al2 O3和 TiO2的混合氧化物；TiAlN 薄膜的动力学曲线呈近似直线规律,而TiAlYN薄膜动力学曲线符合抛物线规律；前者表面氧化物晶粒粗大,而后者表面氧化物晶粒细小,且氧化膜厚度不足前者的一半；添加 Y 可以减少膜层表面液滴的数量,提高膜层的抗氧化性能。
关键词:
炮钢
,
Y
,
(Ti,Al)N
,
电弧离子镀
,
氧化
赵升升
材料科学与工程学报
利用电弧离子镀技术在不锈钢基体上制备了(Ti,A1)N涂层,研究了脉冲偏压对涂层残余应力沿层深分布及相关力学性能的影响.结果表明,(Ti,Al)N涂层残余应力沿层深呈“钟罩型”分布,且随脉冲偏压的增大应力值明显增加；通过对涂层生长结构及微观成分分析,初步探讨了应力分布机理.随脉冲偏压的增加,涂层硬度会显著增加,而膜/基结合力则先增加后减小；采用改变脉冲偏压的工艺制备(Ti,Al)N涂层,可有效调整涂层残余应力沿层深分布趋势,改善其力学性能.
关键词:
(Ti,Al)N
,
硬质涂层
,
应力分布
,
脉冲偏压
王永康
,
熊仁章
,
雷廷权
,
夏立芳
,
李炳生
材料工程
doi:10.3969/j.issn.1001-4381.2002.08.007
通过不同Al含量的Ti-Al粉末冶金靶,采用多弧离子镀技术制备了Ti1-XAlXN涂层.用SEM、XRD、GAXRD以及XTEM等手段研究了Al元素对涂层组织结构的影响.研究表明,TiAlN涂层呈柱状多晶组织,(Ti,Al)N为涂层的主要组成相;随着Al含量的增加,涂层中的(Ti,Al)N相减少,且其晶格常数降低.
关键词:
多弧离子镀
,
Ti1-XAlXN涂层
,
组织结构
,
(Ti,Al)N
范永中
,
张淑娟
,
涂金伟
,
孙霞
,
刘芳
,
李明升
金属学报
doi:10.3724/SP.J.1037.2011.00292
分别在未施加偏压和施加-100V偏压条件下,利用磁控溅射技术在压气机叶片用1Cr11Ni2W2MoV热强不锈钢基体上沉积了Ti0.3Al0.7N和Ti0.3gAl0.55Si0.05Y0.01N硬质涂层.实验结果表明,施加偏压及Si和Y掺杂明显改变了涂层的相结构,提高了涂层致密度,施加-100 V偏压且添加Si和Y的涂层为非晶结构,表面更加均匀致密.950℃氧化实验表明:Ti0.39Al0.55Si0.05Y0.01N涂层表面形成极薄且致密的Al2O3保护性氧化膜,大大降低了氧化速率.施加-100 V偏压的(Ti,Al)N和(Ti,Al,Si,Y)N沉积态涂层与未施加偏压的相应涂层相比,硬度均降低,尤其是(Ti,Al,Si,Y)N涂层变化显著.经950℃热处理,施加偏压的(Ti,Al,Si,Y)N涂层硬度略有降低,这是由于形成了硬度较低的B4相,而未施加偏压的(Ti,Al,Si,Y)N涂层硬度显著提高,这归因于Bl相固溶体的分解.划痕测试结果表明,在实验载荷(50 N)下,所有涂层均未出现连续性的剥落.
关键词:
磁控溅射
,
(Ti,Al)N
,
Si和Y掺杂
,
抗氧化性能
,
硬度
,
结合力
赵升升
,
程毓
,
常正凯
,
王铁钢
,
孙超
金属学报
doi:10.3724/SP.J.1037.2011.00504
利用电弧离子镀技术在不锈钢基体上制备了(Ti,Al)N涂层,研究了N2分压改变对涂层残余应力沿层深分布及相关力学性能的影响.结果表明,低N2分压下,(Ti,Al)N涂层残余应力沿层深分布较均匀,随N2分压的增加,涂层应力沿层深呈“钟罩型”分布,且全膜厚的应力值也明显增大；通过对涂层生长结构及微观成分分析,初步探讨了应力分布机理.随N2分压的增加,涂层硬度会显著增加,而膜/基结合力则大幅下降；采用改变N2分压工艺制备(Ti,Al)N涂层,可有效调整涂层残余应力沿层深分布趋势,改善其力学性能,并可成功制备厚度在130 μm以上的硬质涂层.
关键词:
(Ti,Al)N
,
硬质涂层
,
应力分布
,
调整应力
,
N2分压
Ying Yang
材料科学技术（英）
(Ti,Al)N films were fabricated by arc ion plating (AIP) and then annealed within a range of temperatures from 200 to 500°C for 30 min in vacuum. The results indicate that the average residual stresses decrease slightly from −5.84 to −4.98 GPa with increasing annealing temperature. The stress depth distribution evolves from a sharp ``bell" shape to a mild ``bell" shape, suggesting a more uniform stress state in the annealed films. The microstructure of the films was also investigated in detail. The as-deposited film consists of fine columnar crystals with an amorphous phase at the interface. During heat treatment, the columnar subgrain growth was observed; meanwhile, the phenomenon of crystallization has been identified at the interface. Further more,
the relationship between the residual stresses and the microstructure of the films was explored and highlighted. In addition, there is no hardness degradation of the films during heat treatment.
关键词:
Arc ion plating
Ying Yang
材料科学技术（英）
(Ti,Al)N films were fabricated by arc ion plating (AIP) and then annealed within a range of temperatures from 200 to 500°C for 30 min in vacuum. The results indicate that the average residual stresses decrease slightly from −5.84 to −4.98 GPa with increasing annealing temperature. The stress depth distribution evolves from a sharp ``bell" shape to a mild ``bell" shape, suggesting a more uniform stress state in the annealed films. The microstructure of the films was also investigated in detail. The as-deposited film consists of fine columnar crystals with an amorphous phase at the interface. During heat treatment, the columnar subgrain growth was observed; meanwhile, the phenomenon of crystallization has been identified at the interface. Further more, the relationship between the residual stresses and the microstructure of the films was explored and highlighted. In addition, there is no hardness degradation of the films during heat treatment.
关键词:
Arc ion plating
