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Microstructure and Ferroelectric Properties of (Bi_0:9 Ho_0:1)_3:999Ti_2:997V_0:003O₁₂ Thin Films Prepared by Sol-gel Method for Nonvolatile Memory

Chengju Fu Zhixiong Huang Jie Li Dongyun Guo

材料科学技术（英）

The (Bi_0.9Ho_0.1)_3.999Ti _2.997 V_0.003O₁₂ (BHTV) films have been prepared on Pt/Ti/SiO₂/Si substrates by solgel method. The microstructure and ferroelectric properties of the BHTV films were investigated. The BHTV films show a single phase of Bi-layered Aurivillius structure and dense microstructure. The Ho³⁺/V⁵⁺ cosubstitution can effectively improve the ferroelectric properties. The BHTV film exhibits good ferroelectric properties with 2Pr of 47.6°C/cm², 2Ec of 265 kV/cm (at applied field of 420 kV/cm), dielectric constant of 305, dielectric loss of 0.031 (at 1 MHz), good insulting behavior, as well as the fatigue-free behavior.

关键词: (Bi_0.9Ho_0.1)_3.999Ti _2.997 V_0.003O₁₂ thin films , Sol-gel method , co-substitution , ferroelectric properties , dielectric properties

青铜表面SnO_2保护膜的制备及其防护性能研究

金韬 , 王昌燧 , 陈志文 , 李凡庆

中国腐蚀与防护学报

黑漆古铜镜具有优异的耐腐蚀性能。采用溶胶凝胶法在青铜基体上模拟制备黑漆古铜镜表面的纳米SnO_2薄膜,并检测了该薄膜对于含Cl~-酸性溶液的耐腐蚀性,利用带EDAX的SEM进行了表面和截面的元素分析。结果表明薄膜的SnO_2物相能隔离本体与外界环境,具有一定的防护性能,而表面纳米SnO_2薄膜的致密度决定了防护效果。

关键词: 青铜合金 , Nanometer material , Sol-gel method , Protection effect , null

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