{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"采用传统固相合成法和制备工艺,在1040℃制备了{0.996 [0.95( Na0.5 K0.5)NbO3-0.05LiSbO3 ]-0.004FeBiO3}+x mol％ CuO(KNN-LS-BF+x mol％ CuO)无铅压电陶瓷,研究了CuO掺杂量对陶瓷结构和性能的影响.结果表明,CuO的低温促烧作用明显,微量CuO的掺入并没有改变陶瓷体系的相结构,但对陶瓷的压电和介电性能有明显影响.随CuO掺杂量的增加,陶瓷的d33、kp、εr均是先升高后降低,并在x=0.15时,d33、kp、εr分别达到最大值222 pC/N、0.36、1223.14;Qm也是先升高后降低,不过是在x=0.3时达到了最大值66.02.而tanδ则是先降低,在x=0.45达到最小值2.5％后又开始回升.在x=0.15时,所制备压电陶瓷有最好的综合性能:d33=222pC/N,kp=0.36,εr=1223.14,tanδ=3.3％,Qm =52.27.","authors":[{"authorName":"翟霞","id":"833653fe-8f1a-401b-8562-2e9af842e26c","originalAuthorName":"翟霞"},{"authorName":"王华","id":"659a2bcd-1719-434e-be46-ce05cc656b84","originalAuthorName":"王华"},{"authorName":"崔业让","id":"1668dfc4-66ec-467f-84cf-2b5a38ccbdc6","originalAuthorName":"崔业让"},{"authorName":"袁昌来","id":"9efdeb9b-6a8b-4279-a4b4-818eab5b6e5f","originalAuthorName":"袁昌来"},{"authorName":"许积文","id":"69641712-154d-4f6e-a2b9-3f70556e69fd","originalAuthorName":"许积文"},{"authorName":"张小文","id":"9a40d484-7987-4592-9331-8336471dae6a","originalAuthorName":"张小文"},{"authorName":"周昌荣","id":"c3877deb-f564-43a7-8ae2-83a95268b894","originalAuthorName":"周昌荣"},{"authorName":"<span style=\"color:red\">江民</span><span style=\"color:red\">红</span>","id":"b1435bf5-e174-442b-bef1-82988d73b159","originalAuthorName":"江民红"},{"authorName":"刘心宇","id":"04cef855-84fa-4988-b639-2c2b8b656b6c","originalAuthorName":"刘心宇"}],"doi":"","fpage":"967","id":"6f0a5192-2857-4d64-b52e-2da4edc5c9ec","issue":"4","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"dda9e731-115a-4a04-8019-c64b959ae4e2","keyword":"无铅压电陶瓷","originalKeyword":"无铅压电陶瓷"},{"id":"0a1e422a-b7b3-4a82-b415-d1273f3ec8ee","keyword":"CuO掺杂","originalKeyword":"CuO掺杂"},{"id":"c6e3cfd0-f8d1-4db3-a9f8-6eea7bf8e742","keyword":"性能","originalKeyword":"性能"}],"language":"zh","publisherId":"rgjtxb98201204027","title":"CuO掺杂对KNN-LS-BF无铅压电陶瓷性能的影响","volume":"41","year":"2012"},{"abstractinfo":"为探索玻璃组成对CaO-Al2O3-SiO2系玻璃烧结、晶化和性能的影响,采用烧结法制备了不同组成的钙长石基微晶玻璃.通过差热分析(DTA)、X射线衍射(XRD)、扫描电镜(SEM)和性能测试研究玻璃组成和性能之间的关系.结果表明:随CaO和SiO2含量比值增加,玻璃转变温度和析晶放热峰温度逐渐降低,且析晶放热峰变得尖锐.增加CaO和SiO2比降低了玻璃的析晶活化能和烧结温度,但增加了样品的介电常数、介电损耗和热膨胀系数.析晶活化能E和析晶转变速率k都能适于表征CaO/SiO2比对玻璃析晶性能的影响.所制备的微晶玻璃具有低烧结温度(≤1000℃)、适中介电常数(≤7.5)、低介电损耗(≤0.05%)和低热膨胀系数(≤4.3×10-6/℃),有望用于低温共烧陶瓷基板材料.","authors":[{"authorName":"陈国华","id":"72393893-cede-4d93-a507-ddb1ffcafc41","originalAuthorName":"陈国华"},{"authorName":"徐华蕊","id":"22d15d24-62bc-45aa-a7df-db30f28ef5bf","originalAuthorName":"徐华蕊"},{"authorName":"<span style=\"color:red\">江民</span><span style=\"color:red\">红</span>","id":"cb7dcdd7-8f30-4421-ab61-deb4d18343db","originalAuthorName":"江民红"},{"authorName":"颜东亮","id":"12f5f50a-97ab-49ff-b2fd-7b8d858a153c","originalAuthorName":"颜东亮"},{"authorName":"周昌荣","id":"0c165603-f00b-44ba-aaf7-685281a121f9","originalAuthorName":"周昌荣"},{"authorName":"成钧","id":"2894c766-cf22-4215-b0ae-a2a2351d1fed","originalAuthorName":"成钧"},{"authorName":"刘心宇","id":"7660d3bf-46be-4ee0-8b6d-08172eae42bb","originalAuthorName":"刘心宇"}],"doi":"","fpage":"30","id":"7f80b35c-6851-4386-a2c1-bc7f6831ccdb","issue":"5","journal":{"abbrevTitle":"CLRCLXB","coverImgSrc":"journal/img/cover/CLRCLXB.jpg","id":"15","issnPpub":"1009-6264","publisherId":"CLRCLXB","title":"材料热处理学报"},"keywords":[{"id":"cb40af24-aee1-49b5-af48-1588b4a7a5e6","keyword":"氧化钙和二氧化硅比","originalKeyword":"氧化钙和二氧化硅比"},{"id":"1a9f362e-11be-4464-b958-f515e08a3e1c","keyword":"钙长石","originalKeyword":"钙长石"},{"id":"7270275b-f5c1-4772-a785-518dcab6492b","keyword":"微晶玻璃","originalKeyword":"微晶玻璃"},{"id":"5dc77e66-fd6f-4040-b3e3-24c0bc3c2cee","keyword":"晶化动力学","originalKeyword":"晶化动力学"},{"id":"278b037c-8cb0-4130-b968-84274f8bc33a","keyword":"烧结","originalKeyword":"烧结"},{"id":"049a3958-ad50-498e-8ccc-031d1bfc55e2","keyword":"性能","originalKeyword":"性能"}],"language":"zh","publisherId":"jsrclxb201005007","title":"CaO和SiO2含量比值对钙长石基微晶玻璃性能的影响","volume":"31","year":"2010"},{"abstractinfo":"利用磁控溅射法制备了具有Pt缓冲层的[FePt]50多层膜.通过x射线衍射(XRD)分析和磁性测量研究了不同缓冲层厚度对样品微结构演变和磁性能的影响.结果表明,随着Pt缓冲层厚度(t≤8.6 nm)的增加,薄膜合金的有序化温度明显降低,晶粒尺寸逐渐减小:FePt薄膜样品点阵常数c/a的比值逐渐减小,有序度参数S逐渐增大;同时样品的矫顽力也随着缓冲层厚度的增加而增大,在425℃退火的样品,其矫顽力由缓冲层厚度t=0时的398 kA/m增加到t=8.6nm时的523 kA/m(接近无缓冲层样品在500℃退火的值),平均变化率为14.53 kA·m-1/nm,有效地降低了样品的退火温度;与此同时,剩磁比逐渐减小,从0.68减少到0.56.","authors":[{"authorName":"汪元亮","id":"cb15dc91-09f0-4045-a790-3112a37d532b","originalAuthorName":"汪元亮"},{"authorName":"顾正飞","id":"cb519e59-4161-4f07-9719-debab61f4072","originalAuthorName":"顾正飞"},{"authorName":"成钢","id":"fc45187f-329e-4ab6-81a8-2903b811ee69","originalAuthorName":"成钢"},{"authorName":"成均","id":"3fc9e9cb-377a-4ddb-afe2-eafc9a9fb449","originalAuthorName":"成均"},{"authorName":"<span style=\"color:red\">江民</span><span style=\"color:red\">红</span>","id":"54d49c2b-9f17-4eda-bb8f-cbbe4871e833","originalAuthorName":"江民红"},{"authorName":"赵家成","id":"961230ba-8c03-4124-bffb-60d3d48775ef","originalAuthorName":"赵家成"},{"authorName":"宋振纶","id":"ca263b04-7d8e-4bcb-9ea1-051598c142c7","originalAuthorName":"宋振纶"}],"doi":"","fpage":"2189","id":"fc109380-dc82-48e7-828a-295a77de2de5","issue":"12","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"495b36fd-0f9c-46cf-87e4-aa8e7b0bf617","keyword":"FePt薄膜合金","originalKeyword":"FePt薄膜合金"},{"id":"8d6339fd-ecfe-4e4d-9879-bf38e519500e","keyword":"相转变","originalKeyword":"相转变"},{"id":"a9b297bc-e1a7-4d2a-96bc-73ea9f660ea4","keyword":"相结构","originalKeyword":"相结构"},{"id":"2de6fcf7-e239-4ff5-8be5-c42f54bdec88","keyword":"有序度","originalKeyword":"有序度"},{"id":"6ac7af1b-2e32-4d23-93b7-7b86dadca2f6","keyword":"矫顽力","originalKeyword":"矫顽力"},{"id":"55497e6f-a554-47c6-b280-3c278371eb74","keyword":"剩磁比","originalKeyword":"剩磁比"}],"language":"zh","publisherId":"xyjsclygc200712028","title":"Pt缓冲层厚度对FePt薄膜合金相转变和磁性能的影响","volume":"36","year":"2007"},{"abstractinfo":"室温下通过直流磁控溅射Al2O3掺杂3％(质量分数)的ZnO靶材制备了厚度约1μm、结晶度高、表面平整光滑的ZnO∶Al透明导电薄膜.研究盐酸、王水和草酸溶液对ZnO∶Al薄膜的湿化学刻蚀行为,分析刻蚀对薄膜微观结构、光刻图案、电学和光学性能的影响.结果表明,刻蚀对薄膜的结晶取向性无影响；经盐酸、王水和草酸刻蚀后薄膜的电阻率略有增大,从7.4mΩ·cm分别增大到8.7mnΩ· cm、8.8mQ·cm和8.6mΩ·cm；透光率略有下降,从80％分别下降到76％、77％和78％.0.5％的盐酸刻蚀可以获得结构良好的陷光结构.薄膜在盐酸中刻蚀速率快,易产生浮胶；在草酸中刻蚀图案清晰,但存在残留；在王水中刻蚀图案清晰且无残留.","authors":[{"authorName":"杨玲","id":"98645ab3-5143-4a7d-8c7a-a1127866cd99","originalAuthorName":"杨玲"},{"authorName":"许积文","id":"40c48990-4e88-4bd3-ab0c-6a61e181dc69","originalAuthorName":"许积文"},{"authorName":"王华","id":"6abc9be8-d320-4fbb-8f5e-5d692b400ea7","originalAuthorName":"王华"},{"authorName":"<span style=\"color:red\">江民</span><span style=\"color:red\">红</span>","id":"110b0e95-5bb8-41d6-8f6c-346c97a5105f","originalAuthorName":"江民红"},{"authorName":"袁昌来","id":"f1d2ef34-8b7b-4c0d-968c-2f5420c2ba53","originalAuthorName":"袁昌来"}],"doi":"","fpage":"58","id":"0429bc27-4dc0-4315-824d-6a55df9a7f4a","issue":"10","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"9dd49e7d-33ef-4cc8-a14f-b81a992dc52e","keyword":"ZAO薄膜","originalKeyword":"ZAO薄膜"},{"id":"2f75b474-e431-4324-a330-375899f138e7","keyword":"透明导电","originalKeyword":"透明导电"},{"id":"6a1e6464-91ce-4d8a-a755-9e48978c59e5","keyword":"湿法刻蚀","originalKeyword":"湿法刻蚀"}],"language":"zh","publisherId":"cldb201210017","title":"湿法刻蚀对ZnO∶Al透明导电薄膜结构与性能的影响","volume":"26","year":"2012"},{"abstractinfo":"以自制Mg0.2Zn0.8O∶Al陶瓷为靶材,采用室温溅射后续退火磁控溅射工艺制备了Mg0.2Zn0.8O∶Al紫外透明导电薄膜.研究了溅射压强和退火气氛对Mg0.2Zn0.8O∶Al薄膜结构和光电性能的影响.结果表明:溅射氩气压强不影响薄膜的相结构,但对薄膜的取向生长和结晶质量有一定影响；薄膜的方块电阻随溅射压强的增加先大幅减小后有所增大,溅射气压为2.0 Pa时,薄膜的方块电阻最低；不同溅射气压下制备薄膜的透光范围均已扩展到了紫外区域,而且具有85％以上的高透射率,但溅射气压对薄膜的带隙宽度和透光率没有明显影响；室温下溅射制备的薄膜经真空退火处理后其导电性能显著提高,但在空气中退火处理后其导电性能反而有所下降.","authors":[{"authorName":"王华","id":"a14585b1-e150-4cc9-ba30-8bf01b101d54","originalAuthorName":"王华"},{"authorName":"燕<span style=\"color:red\">红</span>","id":"4901df3c-fe9b-4fe8-bcec-d83a110d4848","originalAuthorName":"燕红"},{"authorName":"许积文","id":"f8fdeb2e-0294-43de-87be-6f045aa39ce3","originalAuthorName":"许积文"},{"authorName":"<span style=\"color:red\">江民</span><span style=\"color:red\">红</span>","id":"51edf2c3-87f5-4e75-911b-9b94a2f73cb1","originalAuthorName":"江民红"},{"authorName":"杨玲","id":"8ed3a592-3a6e-4326-a286-8cfd8db6139f","originalAuthorName":"杨玲"}],"doi":"","fpage":"1526","id":"2e8c89eb-e9d3-44e2-86fe-88a6cabaf6d0","issue":"6","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"f8b2e013-2739-41f0-8c10-848a07b9f459","keyword":"Mg0.2Zn0.8O∶Al","originalKeyword":"Mg0.2Zn0.8O∶Al"},{"id":"69faac67-41eb-4aa2-b435-df5d95ffa9d0","keyword":"紫外透明导电薄膜","originalKeyword":"紫外透明导电薄膜"},{"id":"52f5ffec-f872-4c97-b8e9-09f1de795af9","keyword":"磁控溅射","originalKeyword":"磁控溅射"},{"id":"3651bfbb-33e0-4e9c-9ee0-2168fe0b21e2","keyword":"溅射压强","originalKeyword":"溅射压强"},{"id":"75f829b6-d4fd-4032-9ed5-89614ad4fa75","keyword":"退火气氛","originalKeyword":"退火气氛"},{"id":"1d0d3da2-de9f-40af-b6be-31bcd9867d01","keyword":"光电性能","originalKeyword":"光电性能"}],"language":"zh","publisherId":"rgjtxb98201106032","title":"溅射压强和退火气氛对Mg0.2Zn0.8O∶Al紫外透明导电薄膜结构与性能的影响","volume":"40","year":"2011"},{"abstractinfo":"采用粉末烧结法制备了Al/Tb0.3Dy0.7Fe1.95磁致伸缩复合材料,研究了烧结温度对烧结体的显微结构、相组成、磁致伸缩、抗压强度等性能的影响.研究结果表明,600 ℃烧结时,烧结体中仍主要存在Al与GMM合金相,烧结获得较理想的相分布状态.随着烧结温度的增加,复合体中非GMM相越来越多,原始相减少.当1200 ℃烧结时,烧结体中主要存在杂相,已几乎没有GMM相.随着烧结温度的增加,复合材料的λs和抗压强度明显下降,烧结温度为600 ℃时,烧结体的λs和抗压强度最大,分别为405×10-6和61.71MPa.其不足是,复合材料仍呈现明显的脆性特征.","authors":[{"authorName":"<span style=\"color:red\">江民</span><span style=\"color:red\">红</span>","id":"fb3ddcac-3d4a-4a41-8463-7120805ff7b3","originalAuthorName":"江民红"},{"authorName":"顾正飞","id":"25904e69-22ec-4237-a34f-03298954b881","originalAuthorName":"顾正飞"},{"authorName":"刘心宇","id":"46edcdd7-8655-4db8-a049-89a47dfd939e","originalAuthorName":"刘心宇"},{"authorName":"成钧","id":"865c7538-7ce1-45e3-9203-fe8a7cd7666c","originalAuthorName":"成钧"},{"authorName":"周秀娟","id":"d282798a-a7f1-40ff-80cb-d128d8318cfa","originalAuthorName":"周秀娟"}],"doi":"10.3969/j.issn.1005-5053.2009.03.003","fpage":"13","id":"5e4ea7c5-193f-456d-aa48-66d7965dfcfc","issue":"3","journal":{"abbrevTitle":"HKCLXB","coverImgSrc":"journal/img/cover/HKCLXB.jpg","id":"41","issnPpub":"1005-5053","publisherId":"HKCLXB","title":"航空材料学报"},"keywords":[{"id":"b800560e-5e98-43df-b0af-ad1ef45c1248","keyword":"粉末烧结","originalKeyword":"粉末烧结"},{"id":"ed93218f-543f-4497-9739-5fc23c6e4be9","keyword":"磁致伸缩","originalKeyword":"磁致伸缩"},{"id":"5d49ad7e-d38b-41a6-bf74-8dc8879ef331","keyword":"Al/Tb0 3Dy0 7Fe1 95","originalKeyword":"Al/Tb0 3Dy0 7Fe1 95"},{"id":"0b2276a0-c3ab-4607-947a-08d717888eed","keyword":"复合材料","originalKeyword":"复合材料"},{"id":"e08d7c7b-1fbb-4ac3-add5-165e13910ed2","keyword":"脆性","originalKeyword":"脆性"}],"language":"zh","publisherId":"hkclxb200903003","title":"粉末烧结法制备Al/Tb0.3Dy0.7Fe1.95磁致伸缩复合材料","volume":"29","year":"2009"},{"abstractinfo":"利用非自耗真空电弧熔炼炉,通过恰当控制熔炼温度和热流方向,成功生长了具有<533>轴向取向的多晶稀土-铁系超磁致伸缩合金棒材.对其磁致伸缩性能测试结果表明,所制备的棒材具有较高的磁致伸缩应变,在0MPa压应力、400 kA·m-1的磁场下,其轴向饱和磁致伸缩系数λ//达1045×10-6,饱和磁致伸缩系数As为856×10-6.X射线衍射结果表明,该材料在轴向主要有(533)强衍射峰,同时还具有(311),(110)等弱峰;径向则有(110),(220),(311),(511)等衍射峰,但各峰强度均很弱,证明该方向上的取向性不如轴向.另外,本实验还对超磁致伸缩材料的磁滞同线进行了测试分析.","authors":[{"authorName":"<span style=\"color:red\">江民</span><span style=\"color:red\">红</span>","id":"914afa8e-a3b5-41d6-bee6-a70102489602","originalAuthorName":"江民红"},{"authorName":"顾正飞","id":"6556d386-82d5-48ba-83ae-557eb20db881","originalAuthorName":"顾正飞"},{"authorName":"成钢","id":"359b3ee2-2bab-4abd-97df-d9cb07571c67","originalAuthorName":"成钢"},{"authorName":"成钧","id":"e1843c49-afe8-4347-a17b-61c5e4e1adba","originalAuthorName":"成钧"},{"authorName":"赵家城","id":"db90b93c-b8ea-4068-85a1-f4609525c4ed","originalAuthorName":"赵家城"}],"doi":"10.3969/j.issn.1001-4381.2008.04.002","fpage":"5","id":"6d6bc1a0-4fed-40e7-9d92-ddb2d69d1e30","issue":"4","journal":{"abbrevTitle":"CLGC","coverImgSrc":"journal/img/cover/CLGC.jpg","id":"9","issnPpub":"1001-4381","publisherId":"CLGC","title":"材料工程"},"keywords":[{"id":"0337f6bb-f4e7-4805-ae5b-d0fe0f6a2906","keyword":"磁致伸缩","originalKeyword":"磁致伸缩"},{"id":"eb91ed35-2821-493d-9c0b-22116eaf7206","keyword":"《533》取向","originalKeyword":"《533》取向"},{"id":"b68e6679-08e6-4e9a-aa5f-0959271be545","keyword":"材料制备","originalKeyword":"材料制备"},{"id":"b91b1cce-7898-43b4-afd6-767bac723c9f","keyword":"磁滞回线","originalKeyword":"磁滞回线"}],"language":"zh","publisherId":"clgc200804002","title":"《533》轴向取向稀土超磁致伸缩合金棒的制备与性能","volume":"","year":"2008"},{"abstractinfo":"采用常压固相烧结法制备了Al-Ti共掺ZnO靶材, 采用射频磁控溅射技术及真空退火工艺, 在普通玻璃衬底上制备了具有[100]取向Al-Ti共掺杂ZnO薄膜(ZATO). 采用X射线衍射(XRD)、扫描电子显微镜(SEM)对ZATO薄膜的生长机理、显微结构、形貌进行了测试分析, 用四探针测试仪、紫外-可见分光光度计及荧光光谱仪对ZATO薄膜的光电性能进行了测试分析. 结果表明, ZATO薄膜经500℃保温3h退火后, 择优取向由(002)向(100)方向转变; 此时, 衍射谱上还观察到超点阵衍射线条. [100]取向ZATO薄膜的光学带隙从退火前的3.29降至2.86, 平均可见光透过率从90%降至70%, 表现为一般的透过性; 而电阻率则从1.89×10<SUP>-2</SUP>Ω·cm降至1.25×10<SUP>-3</SUP>Ω·cm, 呈现较好的导电性. 薄膜中均出现了380nm附近的带边发射(NBE)峰以及410、564nm的深能级发射峰, 且经500℃保温3h退火后, 这些峰的位置并未改变, 但峰强均明显减弱. 对上述实验机理进行了分析讨论.","authors":[{"authorName":"<span style=\"color:red\">江民</span><span style=\"color:red\">红</span>","id":"3430821f-ce5b-4982-ae5f-b117d3463d10","originalAuthorName":"江民红"},{"authorName":"刘心宇","id":"58e59bd3-f40c-4308-b723-7bcd1084bf84","originalAuthorName":"刘心宇"}],"categoryName":"|","doi":"10.3724/SP.J.1077.2008.01101","fpage":"1101","id":"84f018d0-de72-48e8-ab01-1b9c968b2988","issue":"6","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"97d722ea-adfe-4f5a-8eeb-a7ff39776b92","keyword":"ZnO薄膜","originalKeyword":"ZnO薄膜"},{"id":"282810d0-f3fb-4248-ab19-0b118fa70460","keyword":" Ti-Al codopant","originalKeyword":" Ti-Al codopant"},{"id":"041102ec-90aa-4566-84bb-56366c683e3d","keyword":" [100] orientation","originalKeyword":" [100] orientation"},{"id":"497d3c9b-9bc2-4d9f-bcfc-23daa6462f4d","keyword":" photoelectric properties <BR>","originalKeyword":" photoelectric properties <BR>"}],"language":"zh","publisherId":"1000-324X_2008_6_3","title":"[100]取向Al-Ti共掺杂ZnO薄膜的制备与光电性能研究","volume":"23","year":"2008"},{"abstractinfo":"采用粉末粘结技术制备了Pr0.8 Tb0.2(Fe0.4Co0.6)1.88C0.05/树脂复合材料.研究了超磁致伸缩合金/环氧树脂复合材料的磁致伸缩性质及高频磁性能,并对所制备的磁致伸缩复合材料的磁导率随频率和树脂体积分数的变化规律进行系统研究.结果表明,由于树脂的添加,不仅可以提高复合材料的截止频率和高频磁性能,使其具有良好的高频响应特性,其截止频率达4MHz以上;而且通过适当选择树脂的体积分数,复合材料仍能保持良好的磁致伸缩性能,Pr0.8Tb0.2(Fe0.4 Co0.6)1.88C0.05/树脂复合材料样品的λ在树脂的质量分数为8%时达最大值,为5.33×10-4,除树脂含量为12%的样品外,其余复合材料样品的磁致伸缩系数均大于合金样品;当树脂含量为6%和8%时,表现出较优异的频率稳定性及高频响应特性.","authors":[{"authorName":"顾正飞","id":"ced6b2ec-f8a3-47a6-9637-c59a33a9fdf2","originalAuthorName":"顾正飞"},{"authorName":"赵家成","id":"8715fb0b-18c2-4f69-9770-05b888e61b9e","originalAuthorName":"赵家成"},{"authorName":"<span style=\"color:red\">江民</span><span style=\"color:red\">红</span>","id":"88383727-3bbc-4013-b28a-472904c1f19b","originalAuthorName":"江民红"},{"authorName":"成钢","id":"ba5c12da-58b7-435e-8b1e-934379804540","originalAuthorName":"成钢"}],"doi":"","fpage":"1799","id":"88d8edc1-f98a-4684-8368-0d1650dddc1a","issue":"11","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"730d2cfc-134c-49fa-ba02-2b3c2ac63266","keyword":"(Pr0.8 Tb0.2)(Fe0.4 Co0.6)1.88C0.05/树脂复合材料","originalKeyword":"(Pr0.8 Tb0.2)(Fe0.4 Co0.6)1.88C0.05/树脂复合材料"},{"id":"ce6db79b-e6a0-42f9-83db-ebe68cf85216","keyword":"高频磁性能","originalKeyword":"高频磁性能"},{"id":"2f0f3de9-ccc0-4990-bc4e-48401980eb5f","keyword":"磁致伸缩","originalKeyword":"磁致伸缩"},{"id":"4e56a457-7d4e-42db-a1f4-20e939017421","keyword":"磁谱","originalKeyword":"磁谱"}],"language":"zh","publisherId":"gncl200811010","title":"(Pr0.8Tb0.2)(Fe0.4Co0.6)1.88C0.05/树脂复合材料的制备与磁特性研究","volume":"39","year":"2008"},{"abstractinfo":"采用传统陶瓷常压烧结工艺,制备了BiFeO3掺杂0.95K0.5Na0.5NbO3-0.05LiSbO3(0.95KNN-0.05LS)无铅压电陶瓷,研究了该陶瓷的相转变、热滞与退极化性能.未掺杂和掺杂0.4mol%BiFeO3的0.95KNN-0.05LS陶瓷在室温下分别为正交相结构和正交相与四方相共存结构.掺杂后的陶瓷样品具有明显的热滞现象,热滞的温区约为300～380℃,对应陶瓷四方相与立方相共存的温区.所有陶瓷样品的平面机电耦合系数kp随温度的升高均减小,在300℃以下均有kp≥0.30.掺杂与未掺杂的KNN朙S陶瓷的退极化温度分别为360℃和370℃.","authors":[{"authorName":"<span style=\"color:red\">江民</span><span style=\"color:red\">红</span>","id":"963800fc-1815-47a8-9839-758db19c22a3","originalAuthorName":"江民红"},{"authorName":"刘心宇","id":"1fb459aa-ddff-4529-803f-52b415e676e0","originalAuthorName":"刘心宇"},{"authorName":"龚晓斌","id":"5eb65a43-aca2-4622-8bc9-69447da5aa19","originalAuthorName":"龚晓斌"},{"authorName":"成钧","id":"c548b2b3-339e-4099-b589-3674f06f4c1e","originalAuthorName":"成钧"}],"doi":"10.3969/j.issn.1005-5053.2010.2.015","fpage":"77","id":"8e0d69d1-0331-4132-bcee-d285456511c1","issue":"2","journal":{"abbrevTitle":"HKCLXB","coverImgSrc":"journal/img/cover/HKCLXB.jpg","id":"41","issnPpub":"1005-5053","publisherId":"HKCLXB","title":"航空材料学报"},"keywords":[{"id":"eced2059-b023-458c-91e9-be0c6a627909","keyword":"无铅压电陶瓷","originalKeyword":"无铅压电陶瓷"},{"id":"344cc387-902f-48be-84f8-ffa20caef21d","keyword":"相变","originalKeyword":"相变"},{"id":"7b4f3f24-3c74-4540-8f5a-496ed820d9d9","keyword":"退极化","originalKeyword":"退极化"},{"id":"7611f2f8-4a54-486b-9b50-ded3f55bc55d","keyword":"机电耦合系数","originalKeyword":"机电耦合系数"},{"id":"554cab5e-c8be-4e2f-972f-794eace70bac","keyword":"热滞","originalKeyword":"热滞"}],"language":"zh","publisherId":"hkclxb201002015","title":"BiFeO3掺杂K0.5Na0.5NbO3-LiSbO3无铅压电陶瓷的相变及退极化性能研究","volume":"30","year":"2010"}],"totalpage":143,"totalrecord":1424}