Chuanyi ZANG
,
Rui LI
,
Hongan MA
材料科学技术（英文）
For the growth of large synthetic diamond crystals by temperature gradient method (TGM), the grit sizes of seed crystals have great effects on the growth rate and quality of large grown crystals. Because of the limited area of seed surfaces, the maximum diffusion flux of carbon source, which could be absorbed by the seed, is related to the seed size. And with increasing the seed sizes, the growth rates also increase markedly. However, the seed sizes should be lower than a certain value, which determines the crystal quality directly. For example, with NiMnCo alloy as the metal solvent, when the seed size increases from 0.5 to 1.8 mm, the growth rate increases greatly from about 1.1 to 3.2 mg/h; when the size is beyond 2.0 mm, more and more metal inclusions would be incorporated into the grown crystals, and the crystal quality is destroyed heavily. Finite element analysis (FEA) shows that, due to the special assembly of growth cell, the diffusion of carbon source in the metal solvent is very inhomogeneous, which could be substantiated directly by the appearances and shapes of large grown crystals and the remains of carbon source. And this inhomogeneous diffusion of carbon source would be very harmful to the growth of large diamond crystals, especially when large-size seed crystals are used.
关键词:
Temperature gradient method
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Longwei YIN
,
Musen LI
,
Dongsheng SUN
,
Fengzhao LI
,
Zhaoyin HAO
,
Xiumei DONG
材料科学技术（英文）
Some dislocations, which are generated in the diamond single crystal during the diamond crystal growth from Fe-Ni-C system, may affect diamond crystal growth mode at high temperature-high pressure (HPHT). The concentric dislocation loops were successfully examined by Moiré images. The surface morphologies of growing and as-grown diamond single crystals were observed by scanning electron microscopy (SEM). The concentric dislocation loops formation process and their effect on the diamond crystal growth mode were analyzed. It should be noted that whatever the nature of the dislocation is, should the Burgers vector of dislocation has a component at the direction normal to the growth interface, the dislocation will make the face parallel to the growth interface grow into spiral face. The presence of consecutive spiral steps on the diamond crystal surface also provides a direct evidence of the dislocation mechanism of diamond crystal growth.
关键词:
High temperature-high pressure
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