{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"铁电隧道结是一种具有<span style=\"color:red\">量子</span><span style=\"color:red\">隧</span><span style=\"color:red\">穿</span><span style=\"color:red\">效应</span>和电致电阻<span style=\"color:red\">效应</span>的新型隧道结.从铁电隧道结的基本理论出发,针对势垒层和电极材料选取的角度详细介绍了铁电隧道结的研究成果,揭示了材料选取对隧道结中铁电性保持的重要影响,含铅的钙钛矿型氧化物作为铁电势垒层是目前研究的重点.铁电隧道结的研究正向着无铅材料及多铁隧道结方向发展.最后讨论了铁电隧道作为存储器单元应用的可能性与优点.","authors":[{"authorName":"潘瑞琨","id":"9cafcdf3-dac7-46d7-97a3-95e79d554c2a","originalAuthorName":"潘瑞琨"},{"authorName":"章天金","id":"a5420e6f-d5b5-4c67-950a-61e5405328af","originalAuthorName":"章天金"},{"authorName":"杨凤霞","id":"df622566-0282-4946-822b-379af5750785","originalAuthorName":"杨凤霞"},{"authorName":"马志军","id":"c72487c2-873b-430c-8bb4-32147239a970","originalAuthorName":"马志军"},{"authorName":"何苗","id":"a5583f4b-4356-4519-ba0a-7a7a70bda87e","originalAuthorName":"何苗"}],"doi":"","fpage":"10","id":"5c75165f-3f27-470b-9606-e4497f20c25b","issue":"13","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"c5e4d00e-53b8-4514-9a2d-00445858b839","keyword":"铁电隧道结","originalKeyword":"铁电隧道结"},{"id":"6f503ede-7934-43d3-b579-a1744f5da41f","keyword":"电致电阻<span style=\"color:red\">效应</span>","originalKeyword":"电致电阻效应"},{"id":"90792918-5a20-4f91-a4a3-6f0127c3e042","keyword":"<span style=\"color:red\">量子</span><span style=\"color:red\">隧</span><span style=\"color:red\">穿</span><span style=\"color:red\">效应</span>","originalKeyword":"量子隧穿效应"}],"language":"zh","publisherId":"cldb201013003","title":"铁电隧道结的研究进展","volume":"24","year":"2010"},{"abstractinfo":"共振<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>是电子的<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>概率在某一个能量值附近以尖锐的峰值形式出现的<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>,是目前为止最有希望应用到实际电路和系统的<span style=\"color:red\">量子</span>器件之一,其特点是器件的响应速度非常快.用传递矩阵的方法分别计算了在外加偏压下,对称双势垒、三势垒应变<span style=\"color:red\">量子</span>阱结构的透射系数与入射电子能量和<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>电流与偏置电压的关系,模拟了应变多<span style=\"color:red\">量子</span>阱结构的<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>系数和Ⅰ-Ⅴ特性曲线.计算得到<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>电流峰值位置与实验测试值符合得很好,对于设计共振<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>二极管并为进一步实验提供理论指导具有重要的意义.","authors":[{"authorName":"安盼龙","id":"1f72fd78-cd2c-4719-ad74-047406c50ba1","originalAuthorName":"安盼龙"},{"authorName":"赵瑞娟","id":"02f1462d-aa19-4ba2-b33f-9c84311bad12","originalAuthorName":"赵瑞娟"}],"doi":"10.3969/j.issn.1007-5461.2011.05.019","fpage":"629","id":"54540611-c88d-4886-83fe-582187d5f31a","issue":"5","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"e8a8d942-4ba9-4410-a926-6c13a15d227a","keyword":"光电子学","originalKeyword":"光电子学"},{"id":"abcd6def-487a-4747-98ef-c911665a4798","keyword":"<span style=\"color:red\">量子</span>阱","originalKeyword":"量子阱"},{"id":"4aff6233-a73f-49b7-a2a6-2e3c85547108","keyword":"共振<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>","originalKeyword":"共振隧穿"},{"id":"db34a14e-f958-4fd6-8587-ba9e53a8b106","keyword":"透射系数","originalKeyword":"透射系数"},{"id":"5071329f-0a89-45a5-b565-663df011ff43","keyword":"<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>电流","originalKeyword":"隧穿电流"}],"language":"zh","publisherId":"lzdzxb201105019","title":"小偏压下阱中阱结构的<span style=\"color:red\">量子</span><span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>特性及其实现","volume":"28","year":"2011"},{"abstractinfo":"本工作设计了一种基于AlAs/InGaAs/GaAs<span style=\"color:red\">量子</span><span style=\"color:red\">隧</span><span style=\"color:red\">穿</span><span style=\"color:red\">效应</span>的纳机电拍子式声传感器,并采用ANSYS有限元分析软件对敏感元件的布置位置进行了最优化仿真设计.在加工工艺上,采用双空气桥技术和Au/Ge/Ni合金膜系欧姆接触技术有效降低了电容、电阻等对器件结构性能的影响;在传感器的具体加工过程中,共振<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>结构(RTS)和拍子结构是通过控制孔技术一次流片完成的.对所加工的传感器进行了初步测试,结果表明,传感器频响能较好的与仿真结果相吻合,1.3KHz时同时具有较好的线性特性.","authors":[{"authorName":"仝召民","id":"e2f76c61-c852-4fc1-baff-a5456c663471","originalAuthorName":"仝召民"},{"authorName":"薛晨阳","id":"a9c02a91-e08a-4549-8017-0c8163e59d3e","originalAuthorName":"薛晨阳"},{"authorName":"张斌珍","id":"68a0cbc3-511d-4c5d-bc2a-f0a355b635a5","originalAuthorName":"张斌珍"},{"authorName":"刘俊","id":"0dcdbdf8-2f32-420f-bae4-1d960fd2f86e","originalAuthorName":"刘俊"},{"authorName":"乔慧","id":"a4b7116e-65e6-4f1b-b190-0036aee70036","originalAuthorName":"乔慧"},{"authorName":"郭慧芳","id":"63b86a97-b0f4-4e14-81b4-7305be9b409c","originalAuthorName":"郭慧芳"}],"doi":"10.3969/j.issn.1007-4252.2008.01.006","fpage":"23","id":"b0347997-1b92-4255-bf1c-bd65d8425b7d","issue":"1","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"af57ae1b-af20-495a-a92f-f12d40ba7554","keyword":"AlAs/InGaAs/GaAs","originalKeyword":"AlAs/InGaAs/GaAs"},{"id":"9b88c901-5252-45ed-a3d7-0428b0f3fa20","keyword":"拍子","originalKeyword":"拍子"},{"id":"3cb86ad5-a93a-411d-88e4-a225b1b9bdf9","keyword":"声传感器","originalKeyword":"声传感器"},{"id":"b31c5873-c915-4132-a3cf-67a16d7a6f81","keyword":"共振<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>结构","originalKeyword":"共振隧穿结构"}],"language":"zh","publisherId":"gnclyqjxb200801006","title":"基于AlAs/InGaAs/GaAs共振<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span><span style=\"color:red\">效应</span>的纳机电声传感器研制","volume":"14","year":"2008"},{"abstractinfo":"本文采用转移矩阵法,系统地研究了磁势垒尺度d对磁<span style=\"color:red\">量子</span>结构中电子自旋输运的影响.结果表明:在理想δ函数型磁势垒结构中,若保持<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>能量不变,随d的变化,透射系数呈现出明显的正弦或余弦型的周期性振荡,且振荡周期与是否考虑自旋无关.而对于真实δ函数型磁势垒结构,随d的变化,透射系数的周期性振荡的规律明显消失.另外,当电子自旋分别<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>理想δ函数型磁势垒结构与真实δ函数型磁势垒结构时,<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>电导随d的变化也存在较大差异.研究结果表明:尺寸的变化对器件的性能产生了较大的影响;且采用理想δ函数型磁势垒结构得出的结论可能了偏离实际应用中的真实δ函数型磁势垒结构的物理规律.","authors":[{"authorName":"袁瑞玚","id":"ed838972-79ac-4ee1-b38d-87f5f19d3848","originalAuthorName":"袁瑞玚"},{"authorName":"王如志","id":"b9ca79ed-cfe4-4b66-83dd-bc1dbcdb635b","originalAuthorName":"王如志"},{"authorName":"段志强","id":"c5973225-29ce-4396-ae9f-2c585094db6e","originalAuthorName":"段志强"},{"authorName":"王波","id":"ccdc3c43-b203-439a-9f21-d20bed455aeb","originalAuthorName":"王波"},{"authorName":"严辉","id":"9dd906bf-900b-492b-b1d6-63fb82db334e","originalAuthorName":"严辉"}],"doi":"10.3969/j.issn.1000-3258.2007.02.014","fpage":"136","id":"8a2045d9-27da-40a3-885c-29fe99755485","issue":"2","journal":{"abbrevTitle":"DWWLXB","coverImgSrc":"journal/img/cover/DWWLXB.jpg","id":"19","issnPpub":"1000-3258","publisherId":"DWWLXB","title":"低温物理学报   "},"keywords":[{"id":"20cfd342-fcc4-4961-95ca-2cb256c30c81","keyword":"尺度<span style=\"color:red\">效应</span>","originalKeyword":"尺度效应"},{"id":"79db70e9-2712-4467-abf1-411b5fd56825","keyword":"自旋输运","originalKeyword":"自旋输运"},{"id":"c84cb14a-22ad-4eb2-8a35-a755cbd369d9","keyword":"<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>电导","originalKeyword":"隧穿电导"},{"id":"a79a04c1-946a-47b2-96a1-fa585349e472","keyword":"磁<span style=\"color:red\">量子</span>结构","originalKeyword":"磁量子结构"}],"language":"zh","publisherId":"dwwlxb200702014","title":"电子自旋<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>反平行磁结构的尺度<span style=\"color:red\">效应</span>","volume":"29","year":"2007"},{"abstractinfo":"运用热力学统计中Kramers理论和Wentzel-Kramers-Brillouin (WKB)近似理论,分析了三结磁通<span style=\"color:red\">量子</span>比特中处于亚稳态粒子的热逃逸和<span style=\"color:red\">量子</span><span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>逃逸.在0.01～4.2 K温度下,计算出了粒子的逃逸率,得到了跳变磁通随磁场和温度变化的分布规律,并同两结超导干涉仪的分布规律进行了定量比较.结果显示,三结磁通<span style=\"color:red\">量子</span>比特自身噪声比两结超导干涉仪大.","authors":[{"authorName":"史强","id":"dbb42287-4a76-44d5-b4c9-417c97fa5dea","originalAuthorName":"史强"},{"authorName":"闫珂柱","id":"ae00363a-9d6b-4fb8-a9d5-d3ace26fce83","originalAuthorName":"闫珂柱"},{"authorName":"王晓丽","id":"94e775ec-2229-447d-b293-6e94c1e4ca8e","originalAuthorName":"王晓丽"},{"authorName":"刘志泉","id":"93459e85-8864-4f81-ab13-829b340e6352","originalAuthorName":"刘志泉"}],"doi":"10.3969/j.issn.1007-5461.2012.06.011","fpage":"723","id":"5e876e53-4f2e-452a-9d66-073d784b7867","issue":"6","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"05a6a8e4-a293-4e39-b49b-2bc704cc2a11","keyword":"<span style=\"color:red\">量子</span>信息","originalKeyword":"量子信息"},{"id":"24a530ca-3bb4-44c2-bb81-c52b04143148","keyword":"磁通<span style=\"color:red\">量子</span>比特","originalKeyword":"磁通量子比特"},{"id":"e60117a5-fe2c-4326-8da6-51811c013c81","keyword":"亚稳态","originalKeyword":"亚稳态"},{"id":"7ee984ad-baad-487b-9fec-0c3f72e80d5e","keyword":"约瑟夫森结","originalKeyword":"约瑟夫森结"}],"language":"zh","publisherId":"lzdzxb201206011","title":"三结磁通<span style=\"color:red\">量子</span>比特中处于亚稳态粒子的热逃逸和<span style=\"color:red\">量子</span><span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>","volume":"29","year":"2012"},{"abstractinfo":"典型的磁性隧道结是“三明治”结构,即由上下两个铁磁电极以及中间厚度为1 nm量级的绝缘势垒层构成.当外加磁场使两铁磁电极的磁矩由平行态向反平行态翻转时,<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>电阻会发生低电阻态向高电阻态的转变.自从1995年发现室温<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>磁电阻(TMR)以来,非晶势垒的AlOx磁性隧道结在磁性随机存储器(MRAM)和磁硬盘磁读头(Read Head)中得到了广泛的应用,2007年室温下其磁电阻比值可达到80％.下一代高速、低功耗、高性能的自旋电子学器件的发展,迫切需要更高的室温TMR比值和新型的调制结构.2001年通过第一性原理计算发现:由于MgO(001)势垒对不同对称性的自旋极化电子具有自旋过滤(Spin Filter)<span style=\"color:red\">效应</span>,单晶外延的Fe(001)/MgO(001)/Fe(001)磁性隧道结的TMR比值可超过1000％,随后2004年在单晶或多晶的MgO磁性隧道结中获得室温约200％的TMR比值,2008年更是在赝自旋阀结构CoFeB/MgO/CoFeB磁性隧道结中获得高达604％的室温TMR比值.伴随着新势垒材料的不断发现和各种磁性隧道结结构的优化,共振<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>和自旋依赖的库仑阻塞磁电阻等新<span style=\"color:red\">效应</span>以及磁性传感器、磁性随机存储器和自旋纳米振荡器及微波检测器等新器件逐渐成为科学和工业界所关注的研究与应用热点.对磁性隧道结(MTJ)材料及其器件应用研究和进展进行了简要介绍.","authors":[{"authorName":"韩秀峰","id":"743441e4-b4bd-4349-a48c-92fd222d2342","originalAuthorName":"韩秀峰"},{"authorName":"刘厚方","id":"35bf7818-a8d9-4165-9b9c-04bcb81e27ee","originalAuthorName":"刘厚方"},{"authorName":"张佳","id":"72af688b-f501-4072-b7c7-fc2fb3b0a283","originalAuthorName":"张佳"},{"authorName":"师大伟","id":"d5e7a600-4a85-4556-b0d3-e68cbbbf0f8c","originalAuthorName":"师大伟"},{"authorName":"刘东屏","id":"e26b0065-f83a-4b75-b539-04e975134878","originalAuthorName":"刘东屏"},{"authorName":"丰家峰","id":"d49ea0e4-e9db-45d2-8a4b-ff26ba76704f","originalAuthorName":"丰家峰"},{"authorName":"魏红祥","id":"19804221-2f76-43c8-9c92-5e53df0a73cb","originalAuthorName":"魏红祥"},{"authorName":"王守国","id":"ad26b397-2e7b-4b15-93be-442e8defe214","originalAuthorName":"王守国"},{"authorName":"詹文山","id":"66a9fb56-0db0-41b0-9a35-d861999af74e","originalAuthorName":"詹文山"}],"doi":"10.7502/j.issn.1674-3962.2013.06.02","fpage":"339","id":"9b93c2b4-99b5-407d-8db6-d8d8f25bb027","issue":"6","journal":{"abbrevTitle":"ZGCLJZ","coverImgSrc":"journal/img/cover/中国材料进展.jpg","id":"80","issnPpub":"1674-3962","publisherId":"ZGCLJZ","title":"中国材料进展"},"keywords":[{"id":"ccfbe4d9-18ed-4800-8273-eebc316b326a","keyword":"巨磁电阻<span style=\"color:red\">效应</span>","originalKeyword":"巨磁电阻效应"},{"id":"34867372-1f1f-493d-bae8-9d275ae4b4e6","keyword":"<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>磁电阻<span style=\"color:red\">效应</span>","originalKeyword":"隧穿磁电阻效应"},{"id":"f788af89-dbb9-45e1-a24b-1401d563521d","keyword":"磁性隧道结","originalKeyword":"磁性隧道结"},{"id":"7b878422-c89f-4271-8396-d9d1276fb63d","keyword":"第一性原理计算","originalKeyword":"第一性原理计算"},{"id":"49152b0e-742e-415e-a59d-68d95c5a7856","keyword":"自旋转移力矩<span style=\"color:red\">效应</span>","originalKeyword":"自旋转移力矩效应"},{"id":"4494e31b-baf8-486f-825d-7d2c2419e7a6","keyword":"库仑阻塞磁电阻","originalKeyword":"库仑阻塞磁电阻"},{"id":"d5ff5ddd-9fc3-49ef-9d5e-48b59389b50c","keyword":"磁随机存储器","originalKeyword":"磁随机存储器"}],"language":"zh","publisherId":"zgcljz201306002","title":"新型磁性隧道结材料及其<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>磁电阻<span style=\"color:red\">效应</span>","volume":"32","year":"2013"},{"abstractinfo":"利用倏逝波的概念和多波束干涉理论解释了一维固-液结构有限周期声子晶体全反射<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span><span style=\"color:red\">效应</span>产生的原因,并推导出全反射<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>峰带的波长满足的解析公式.得出了一维固-液结构有限周期声子晶体全反射<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>峰带的波长随周期数以及周期波程的变化规律,这些结论与转移矩阵法的结论吻合,弥补了一维有限周期声子晶体研究中数值计算方法的不足.","authors":[{"authorName":"刘启能","id":"89ad2b24-40bb-4417-befd-3287a0a73545","originalAuthorName":"刘启能"},{"authorName":"刘沁","id":"40f133f8-fb67-43da-b6e9-523c8caacd8c","originalAuthorName":"刘沁"}],"doi":"","fpage":"1664","id":"34e645bd-90bc-447d-8169-2640c75122d7","issue":"6","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"c0fd476d-cfa8-4c28-9180-ee09403d4f8f","keyword":"声子晶体","originalKeyword":"声子晶体"},{"id":"5ee54d03-d9e3-425b-9c27-ae245e01f637","keyword":"全反射","originalKeyword":"全反射"},{"id":"3c02865e-c63f-430a-8ca7-2555b35d2cb7","keyword":"<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span><span style=\"color:red\">效应</span>","originalKeyword":"隧穿效应"},{"id":"b9724d89-8b2c-4661-a4ac-3384a6d41baf","keyword":"解析理论","originalKeyword":"解析理论"}],"language":"zh","publisherId":"rgjtxb98201206035","title":"固-液有限周期声子晶体全反射<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span><span style=\"color:red\">效应</span>的解析理论","volume":"41","year":"2012"},{"abstractinfo":"本文采用半经验紧束缚能带理论,通过自洽计算薛定谔方程和泊松方程研究了AlN/GaN共振<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>二极管中极化<span style=\"color:red\">效应</span>对电流的影响.结果发现,极化<span style=\"color:red\">效应</span>导致电流曲线发生不对称性,并影响电流的共振电压位置,这与实验报道的结果相一致.并且随着极化电荷的增加,在一定的偏压条件下,只能观测到一个子能级<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>或者根本没有负微分电阻现象发生.","authors":[{"authorName":"汤乃云","id":"718918f6-9fcc-468d-803d-7cac9636b77a","originalAuthorName":"汤乃云"}],"doi":"10.3969/j.issn.1007-4252.2009.01.006","fpage":"34","id":"90248afc-8088-4d97-8127-00b57a6bebeb","issue":"1","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"7b4765aa-3912-4c8d-8469-c7a48b83005e","keyword":"AlN/GaN","originalKeyword":"AlN/GaN"},{"id":"ccf3a9ce-85be-47c3-92bc-eaa3e4ca299d","keyword":"共振<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>二极管","originalKeyword":"共振隧穿二极管"},{"id":"1651c535-ce55-4548-98da-7b22103a946c","keyword":"极化","originalKeyword":"极化"},{"id":"6518f76c-f48f-4292-93d0-215a7d9f1403","keyword":"负微分电阻","originalKeyword":"负微分电阻"}],"language":"zh","publisherId":"gnclyqjxb200901006","title":"极化<span style=\"color:red\">效应</span>对AlN/GaN共振<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>二极管电流特性的影响","volume":"15","year":"2009"},{"abstractinfo":"利用光子<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span><span style=\"color:red\">效应</span>设计一种高Q/V值小体积微腔.通过传输矩阵的方法研究该结构的光学传输性质.在光子<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>传输模式下,该微腔具有一系列分离的传输模式,每个传输模式都具有较高的Q值.如果微腔由非线性材料构成,则会出现光学双稳态现象.微腔传输模式的级数越高,光学双稳态的阈值越低.研究结果为光学微腔的设计提供参考.","authors":[{"authorName":"姜迎新","id":"d32c4b66-413f-44ac-abcf-fe61f8ffe87c","originalAuthorName":"姜迎新"},{"authorName":"方云团","id":"b3af302f-8ea0-47de-9a7d-bee37fb5cfe4","originalAuthorName":"方云团"}],"doi":"","fpage":"796","id":"cd0d03e2-52a7-48b7-a24e-3207dc29f14b","issue":"3","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"5dce2013-15a9-4d34-9f58-b35627e4bb47","keyword":"光学微腔","originalKeyword":"光学微腔"},{"id":"999e6e5c-a43b-4fa2-9f52-1bb0997709bb","keyword":"光子<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span><span style=\"color:red\">效应</span>","originalKeyword":"光子隧穿效应"},{"id":"5c1d75b9-8979-4738-8fe0-5546fdfb6719","keyword":"双稳态","originalKeyword":"双稳态"}],"language":"zh","publisherId":"rgjtxb98201103048","title":"利用光子<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span><span style=\"color:red\">效应</span>实现高Q/V值微腔和光学双稳态","volume":"40","year":"2011"},{"abstractinfo":"以共振<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>结构为压阻器件可以得到较高的灵敏度,但是当实验选择不同的工作偏压时,这种压阻<span style=\"color:red\">效应</span>表现得极其不同.由于高灵敏度是依靠较高的I-V曲线斜率获得的,因此最初人们希望选择具有较高峰谷比结构作为器件.但是有些区域的斜率过大,以至于压阻<span style=\"color:red\">效应</span>失去线性及稳定性而变得没有实用价值.另外,在某些工作区域由于共振<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>结构本身具有的双稳态特性,而使其完全失去压阻特性.本文对这些问题进行了系统分析,并对一个具体的结构,分析其工作区域及特性,给出最高灵敏度可达700左右.","authors":[{"authorName":"魏天杰","id":"2d256cce-1891-4fb6-aaa3-59791f6862c6","originalAuthorName":"魏天杰"},{"authorName":"薛晨阳","id":"b6261a3f-10fe-4ba8-8b18-8222d4966769","originalAuthorName":"薛晨阳"},{"authorName":"李艳","id":"6190b33e-0091-4cb8-ba6d-5fce2c921f3d","originalAuthorName":"李艳"},{"authorName":"张文栋","id":"088638d6-4582-406c-a3b8-73e8f228481d","originalAuthorName":"张文栋"}],"doi":"10.3969/j.issn.1007-4252.2008.01.040","fpage":"179","id":"4673879f-e39b-4d08-8c1a-8ce17baeb6ce","issue":"1","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"6d53a6c3-4b43-4e65-9ae4-15effde89d76","keyword":"共振<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>结构","originalKeyword":"共振隧穿结构"},{"id":"4106f8ff-c852-4ccf-b7c9-4ed0ec27486a","keyword":"压阻系数","originalKeyword":"压阻系数"},{"id":"bc213703-8f57-42a9-8e17-de71cc7cd558","keyword":"I-V曲线","originalKeyword":"I-V曲线"},{"id":"31fd6e99-bc41-4968-9b8f-3578a0448d09","keyword":"灵敏度","originalKeyword":"灵敏度"}],"language":"zh","publisherId":"gnclyqjxb200801040","title":"基于共振<span style=\"color:red\">隧</span><span style=\"color:red\">穿</span>结构的压阻系数","volume":"14","year":"2008"}],"totalpage":1166,"totalrecord":11660}