{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"利用直流反应磁控溅射在柔性衬底(聚乙烯对苯二酸脂,PET)上低温沉积了对可见光透明的低电阻率的ZnxCd1-xO<span style=\"color:red\">薄膜</span>,并研究了Zn含量x对ZnxCd1-xO<span style=\"color:red\">薄膜</span>的结晶性能、电学性能及光学性能的影响.XRD分析结果表明,当x<0.65时,<span style=\"color:red\">薄膜</span>为CdO结构,但x>0.65时,<span style=\"color:red\">薄膜</span>为高度取向的ZnO结构.Hall效应测试显示,当x≤0.5时,<span style=\"color:red\">薄膜</span>的载流子浓度很高,电阻率为10-3Ω·cm的数量级;迁移率随x增加先增大.在x=0.5处达到极大值,然后随x的增加而降低.紫外可见透射谱表明,掺zn后的ZnxCd1-xO<span style=\"color:red\">薄膜</span>在整个可见光波段内的透过率远远高于纯CdO<span style=\"color:red\">薄膜</span>的透过率.综合分析结果表明,x=0.5是低温制备的低阻、高透光性能<span style=\"color:red\">薄膜</span>的最佳Zn含量.","authors":[{"authorName":"季振国","id":"7b8eb9d6-f0cb-4ea6-a324-10698be87e2b","originalAuthorName":"季振国"},{"authorName":"陈敏梅","id":"e4d9cfcc-af6d-45e6-a41c-8e9f6d0c4fa6","originalAuthorName":"陈敏梅"},{"authorName":"张品","id":"bb22bb3c-9888-4c0d-b5a3-9dd761add714","originalAuthorName":"张品"},{"authorName":"周强","id":"3b628ec0-1534-497f-ad01-0ddec1f68c2f","originalAuthorName":"周强"}],"doi":"10.3321/j.issn:1000-324X.2008.02.032","fpage":"361","id":"fa66a3e9-5a27-4437-b6a9-1868fd52b2c8","issue":"2","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"05b5d716-67a1-4454-9f43-f1bf27a96466","keyword":"直流磁控溅射","originalKeyword":"直流磁控溅射"},{"id":"20ad6256-6c75-4914-b6ea-574a2bda2937","keyword":"柔性衬底","originalKeyword":"柔性衬底"},{"id":"cfc5fc06-eadf-4493-a3e8-705953a78466","keyword":"<span style=\"color:red\">ZnCdO</span><span style=\"color:red\">薄膜</span>","originalKeyword":"ZnCdO薄膜"},{"id":"f7989045-323a-4c72-a32d-1bd187213490","keyword":"透明导电膜","originalKeyword":"透明导电膜"}],"language":"zh","publisherId":"wjclxb200802032","title":"柔性衬底PET上低温沉积ZnxCd1-xO透明导电<span style=\"color:red\">薄膜</span>","volume":"23","year":"2008"},{"abstractinfo":"采用一种新的<span style=\"color:red\">薄膜</span>内耗仪观测Ni50Ti50<span style=\"color:red\">薄膜</span>样品的形变(<span style=\"color:red\">薄膜</span>形变造成<span style=\"color:red\">薄膜</span>与载膜硅片之间的界面应力)随温度或其它环境参量的变化．同步测量了<span style=\"color:red\">薄膜</span>的内耗、动态模量、<span style=\"color:red\">薄膜</span>应力以及Ni50Ti50<span style=\"color:red\">薄膜</span>的相变过程.","authors":[{"authorName":"李健","id":"0986a0aa-be4b-4d7f-aba7-14cc77c909db","originalAuthorName":"李健"},{"authorName":"M.Wuttig","id":"bcb7f950-f245-4ffe-9aad-b08d13e04fa4","originalAuthorName":"M.Wuttig"}],"categoryName":"|","doi":"","fpage":"1225","id":"17dcbfaf-ccdd-4ab4-946b-0105dcb53cc0","issue":"11","journal":{"abbrevTitle":"JSXB","coverImgSrc":"journal/img/cover/JSXB.jpg","id":"48","issnPpub":"0412-1961","publisherId":"JSXB","title":"金属学报"},"keywords":[{"id":"6bb09d5e-b9c5-4b7a-827a-8848b301541f","keyword":"内耗","originalKeyword":"内耗"},{"id":"8c5d98ce-2c58-437e-9b94-68bbfee4a3b5","keyword":"null","originalKeyword":"null"},{"id":"294eb668-7260-443b-bc90-bfe5133d1787","keyword":"null","originalKeyword":"null"}],"language":"zh","publisherId":"0412-1961_2003_11_20","title":"用<span style=\"color:red\">薄膜</span>内耗仪测定<span style=\"color:red\">薄膜</span>应力","volume":"39","year":"2003"},{"abstractinfo":"采用一种新的<span style=\"color:red\">薄膜</span>内耗仪观测Ni50Ti50<span style=\"color:red\">薄膜</span>样品的形变(<span style=\"color:red\">薄膜</span>形变造成<span style=\"color:red\">薄膜</span>与载膜硅片之间的界面应力)随温度或其它环境参量的变化.同步测量了<span style=\"color:red\">薄膜</span>的内耗、动态模量、<span style=\"color:red\">薄膜</span>应力以及Ni50Ti50<span style=\"color:red\">薄膜</span>的相变过程.","authors":[{"authorName":"李健","id":"025602e5-bf6c-43bf-b818-05d528da2145","originalAuthorName":"李健"},{"authorName":"M.Wuttig","id":"c7f9664e-b375-4e66-b9d7-bbaa1be36794","originalAuthorName":"M.Wuttig"}],"doi":"10.3321/j.issn:0412-1961.2003.11.028","fpage":"1225","id":"4674885d-767e-41fc-9277-9ab23424d962","issue":"11","journal":{"abbrevTitle":"JSXB","coverImgSrc":"journal/img/cover/JSXB.jpg","id":"48","issnPpub":"0412-1961","publisherId":"JSXB","title":"金属学报"},"keywords":[{"id":"af5c2d7a-69f2-4ef6-b0b0-8d8aa2fdf396","keyword":"内耗","originalKeyword":"内耗"},{"id":"410533df-4db8-4088-a5f0-d787bae84bdc","keyword":"形状记忆效应","originalKeyword":"形状记忆效应"},{"id":"b71a11e2-4d8c-464a-ade6-ae84148842cb","keyword":"<span style=\"color:red\">薄膜</span>应力","originalKeyword":"薄膜应力"}],"language":"zh","publisherId":"jsxb200311028","title":"用<span style=\"color:red\">薄膜</span>内耗仪测定<span style=\"color:red\">薄膜</span>应力","volume":"39","year":"2003"},{"abstractinfo":"用真空共蒸发法在室温下制备了ZnTe:Cu多晶<span style=\"color:red\">薄膜</span>.用XRD表征<span style=\"color:red\">薄膜</span>结构,刚沉积未掺Cu和适度掺Cu的<span style=\"color:red\">薄膜</span>为立方结构,高度(111)择优,重掺Cu的为立方和六方混合相.室温时<span style=\"color:red\">薄膜</span>的形貌和光能隙取决于掺Cu浓度和退火温度,并通过透射光谱的测量计算出光能隙.重掺Cu的<span style=\"color:red\">薄膜</span>具有反常电导温度关系.","authors":[{"authorName":"蔡道林","id":"76f58a13-dbde-4650-87f5-d86602f22df1","originalAuthorName":"蔡道林"},{"authorName":"郑家贵","id":"0d901ab3-3160-49f9-b9a0-faed124ae8b5","originalAuthorName":"郑家贵"},{"authorName":"冯良桓","id":"d4657230-2d04-4f2e-8c47-1e143a86133c","originalAuthorName":"冯良桓"},{"authorName":"蔡伟","id":"0c282bed-fb74-474d-9669-17facdb0135d","originalAuthorName":"蔡伟"},{"authorName":"蔡亚平","id":"13807526-8d2c-41fc-b194-2cd3337dd3e9","originalAuthorName":"蔡亚平"},{"authorName":"张静全","id":"190f30ee-d1ec-40ca-9883-4c2b73a025a1","originalAuthorName":"张静全"}],"doi":"10.3969/j.issn.1005-0299.2004.05.008","fpage":"479","id":"314e23b4-84e7-4843-961c-db21ebe6eb0b","issue":"5","journal":{"abbrevTitle":"CLKXYGY","coverImgSrc":"journal/img/cover/CLKXYGY.jpg","id":"14","issnPpub":"1005-0299","publisherId":"CLKXYGY","title":"材料科学与工艺"},"keywords":[{"id":"c2cd8a0f-7c2c-4369-8636-0ab1d3517c4b","keyword":"ZnTe:Cu<span style=\"color:red\">薄膜</span>","originalKeyword":"ZnTe:Cu薄膜"},{"id":"1250a186-cfa0-4c83-a9ab-915c6c4fbf4c","keyword":"共蒸发法","originalKeyword":"共蒸发法"},{"id":"f4c2cd9e-59bd-4e6e-a685-136bc9a05722","keyword":"反常电导温度关系","originalKeyword":"反常电导温度关系"}],"language":"zh","publisherId":"clkxygy200405008","title":"ZnTe<span style=\"color:red\">薄膜</span>特性研究","volume":"12","year":"2004"},{"abstractinfo":"探讨了U<span style=\"color:red\">薄膜</span>的制备方法.主要介绍了机械抛光、电解抛光、机械轧制、磁控溅射沉积、离子束辅助沉积和聚焦离子束方法等,涉及了精细U<span style=\"color:red\">薄膜</span>的制备要求.同时,简要介绍了防止U<span style=\"color:red\">薄膜</span>氧化的后处理手段.","authors":[{"authorName":"吕学超","id":"7dce6463-2b4a-47c9-93f8-00d52cdc3d4b","originalAuthorName":"吕学超"},{"authorName":"任大鹏","id":"7c2e132a-d3d5-4ede-af0c-f249eee9a9cf","originalAuthorName":"任大鹏"},{"authorName":"汪小琳","id":"8377989e-e8d0-41f3-80d9-9a6b54e06d0d","originalAuthorName":"汪小琳"}],"doi":"","fpage":"1181","id":"36876aff-1f77-4d3a-bc2f-c042d1c65a60","issue":"8","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"edb78014-d84e-44a0-b5fe-e5ddb7ba01f2","keyword":"U<span style=\"color:red\">薄膜</span>","originalKeyword":"U薄膜"},{"id":"2aa5a980-7012-4049-a7ef-6e506bc4d69f","keyword":"制备方法","originalKeyword":"制备方法"},{"id":"d4b77d5d-f078-45fe-91e6-d063c79ef26b","keyword":"U<span style=\"color:red\">薄膜</span>抗氧化处理","originalKeyword":"U薄膜抗氧化处理"}],"language":"zh","publisherId":"xyjsclygc200508002","title":"U<span style=\"color:red\">薄膜</span>制备方法","volume":"34","year":"2005"},{"abstractinfo":"采用电子束蒸发方法在玻璃衬底上制备ZnO<span style=\"color:red\">薄膜</span>和掺杂ZnO<span style=\"color:red\">薄膜</span>.通过X射线衍射、台阶仪及Hall效应等测试研究了衬底温度和掺杂对晶体质量和电学性能的影响,发现原位生长的ZnO薄沿c轴择优生长,且掺杂ZnO<span style=\"color:red\">薄膜</span>具有低达3.029×10-4Ω·cm的电阻率.","authors":[{"authorName":"郝瑞亭","id":"35f4d33b-65e2-4ed8-87b3-4523c619217e","originalAuthorName":"郝瑞亭"},{"authorName":"刘焕林","id":"65efa85e-8c81-4bec-a8d0-857bb9090476","originalAuthorName":"刘焕林"},{"authorName":"杨宇","id":"4ca334a1-a6d8-42f9-89d1-170e5308a51e","originalAuthorName":"杨宇"}],"doi":"","fpage":"157","id":"cb9d97f3-e55a-4d97-ae61-077ba371738a","issue":"z1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"431fd4f3-3e96-406d-9ef9-dfb334f330f4","keyword":"ZnO<span style=\"color:red\">薄膜</span>","originalKeyword":"ZnO薄膜"},{"id":"65da96c3-5fd4-494d-a108-142366dae209","keyword":"电子束蒸发","originalKeyword":"电子束蒸发"},{"id":"c375be8c-1642-4e94-991f-c3a600a8fc8e","keyword":"电学性能","originalKeyword":"电学性能"},{"id":"6255e6b0-b036-4151-9c3b-d4ad75f352da","keyword":"XRD分析","originalKeyword":"XRD分析"}],"language":"zh","publisherId":"gncl2004z1026","title":"掺杂ZnO<span style=\"color:red\">薄膜</span>研究","volume":"35","year":"2004"},{"abstractinfo":"介质铁电超晶格<span style=\"color:red\">薄膜</span>是一类新型的<span style=\"color:red\">薄膜</span>材料,已逐渐开始受到重视,成为研究的热点.本文主要分析了铁电超晶格<span style=\"color:red\">薄膜</span>的结构特点、组分材料、介电铁电性能;介绍了其在实际中的应用以及在近几年的发展;概括了几种常用的介质铁电超晶格<span style=\"color:red\">薄膜</span>的生长技术及其影响因素;最后对铁电超晶格<span style=\"color:red\">薄膜</span>的发展和应用前景进行了展望.","authors":[{"authorName":"郝兰众","id":"6b76ff21-52b4-438f-930d-d40ae669ebec","originalAuthorName":"郝兰众"},{"authorName":"李燕","id":"0f54288b-eec0-44f0-846c-ada90687d6bc","originalAuthorName":"李燕"},{"authorName":"刘云杰","id":"cf67888c-abaf-410c-91ca-416b81c8c17d","originalAuthorName":"刘云杰"},{"authorName":"邓宏","id":"b0431513-3639-41a8-8661-287234c6782d","originalAuthorName":"邓宏"}],"doi":"","fpage":"1533","id":"31136dc8-182f-4a35-b8ab-98b5abf5703c","issue":"z1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"81298464-3bde-4b0d-8c3e-ebf6d7d727f3","keyword":"铁电超晶格","originalKeyword":"铁电超晶格"},{"id":"b6bf87f0-6b3d-4916-a378-ab081166aba4","keyword":"y<span style=\"color:red\">薄膜</span>","originalKeyword":"y薄膜"},{"id":"0a3eb80c-f214-47cb-8692-59ce48e81071","keyword":"分子束外延","originalKeyword":"分子束外延"}],"language":"zh","publisherId":"gncl2004z1431","title":"铁电超晶格<span style=\"color:red\">薄膜</span>","volume":"35","year":"2004"},{"abstractinfo":"就工艺,测试结果,性能等方面综述了钇铁石榴石YIG(Yttrium Iron Garnet)<span style=\"color:red\">薄膜</span>的制备方法,包括Sol-Gel、CVD、溅射、PLD、LPE等.从YIG复合<span style=\"color:red\">薄膜</span>的制备、基片选择等角度,提出通过提高YIG<span style=\"color:red\">薄膜</span>制品的磁光性能从而改善磁光器件整体性能的新思路.","authors":[{"authorName":"梁军","id":"70eaf3f8-0ee3-47a7-87a4-9cd25ad31a53","originalAuthorName":"梁军"},{"authorName":"张溪文","id":"1f4b3a88-e06e-4f89-875d-685e71139125","originalAuthorName":"张溪文"},{"authorName":"张守业","id":"f1918342-bd41-4225-87f6-7b0c612d6605","originalAuthorName":"张守业"},{"authorName":"韩高荣","id":"8c1e987e-e2ad-43ea-84ce-9a879282c53b","originalAuthorName":"韩高荣"}],"doi":"","fpage":"21","id":"cdf90f69-9531-45da-9bc5-b1bf0a5b3d59","issue":"1","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"53b4bb69-4262-4491-a11f-0cb7edb0aaa5","keyword":"YIG","originalKeyword":"YIG"},{"id":"57a96dab-03a6-4f25-a72c-fa1d89eb3ae4","keyword":"法拉第旋转角","originalKeyword":"法拉第旋转角"},{"id":"436aeabc-5432-4e80-8619-dac1abdd4975","keyword":"复合<span style=\"color:red\">薄膜</span>","originalKeyword":"复合薄膜"}],"language":"zh","publisherId":"cldb200301007","title":"YIG<span style=\"color:red\">薄膜</span>制备方法研究","volume":"17","year":"2003"},{"abstractinfo":"本文在25 ℃、相对湿度50%的条件下,分别蒸镀了Al,Al/Se<span style=\"color:red\">薄膜</span>,研究了它们在空气中的导电性能,试验结果表明,只需50 s, Al<span style=\"color:red\">薄膜</span>的氧化反应已基本完成,其电阻率变化率为24.9%;大约需要2 min,Al/Se<span style=\"color:red\">薄膜</span>电阻变化率为4.5%,随后其电阻基本处于稳定状态.这主要是因为<span style=\"color:red\">薄膜</span>边沿和镀Se<span style=\"color:red\">薄膜</span>时形成的针孔的铝膜首先被氧化,使电阻增加.形成的Al2O3<span style=\"color:red\">薄膜</span>阻止了反应的继续进行,电阻不再变化.","authors":[{"authorName":"李志贤","id":"ad5201ae-8012-4304-9d39-6e4294b463ce","originalAuthorName":"李志贤"},{"authorName":"赵彦钊","id":"a1df9e95-8dcc-4f8c-8cf5-c30b00cc5d0b","originalAuthorName":"赵彦钊"},{"authorName":"张方辉","id":"d09970f6-f120-48ce-8753-e160fdf7d512","originalAuthorName":"张方辉"}],"doi":"","fpage":"1271","id":"ffd9bc58-7099-4fd1-b0cb-19b7fff7a0d2","issue":"6","journal":{"abbrevTitle":"GSYTB","coverImgSrc":"journal/img/cover/GSYTB.jpg","id":"36","issnPpub":"1001-1625","publisherId":"GSYTB","title":"硅酸盐通报   "},"keywords":[{"id":"7a7b2b7b-581a-4832-bc24-735166fbdd95","keyword":"电阻变化率","originalKeyword":"电阻变化率"},{"id":"3899b96a-d315-4a0c-b493-cab36624e9fb","keyword":"稳定性","originalKeyword":"稳定性"},{"id":"7cf67601-9f7b-4852-95ea-1fb04e378684","keyword":"Al<span style=\"color:red\">薄膜</span>","originalKeyword":"Al薄膜"},{"id":"0c5591bc-b6a4-4036-8f1b-3c41d87f8a10","keyword":"Al/Se<span style=\"color:red\">薄膜</span>","originalKeyword":"Al/Se薄膜"}],"language":"zh","publisherId":"gsytb200806038","title":"<span style=\"color:red\">薄膜</span>Se对<span style=\"color:red\">薄膜</span>Al电极的防护作用探讨","volume":"27","year":"2008"},{"abstractinfo":"极性纤锌矿结构GaN外延<span style=\"color:red\">薄膜</span>生长时是沿着它的极性轴,主要是[0001]和[0001]方向的,而这两个极性方向对<span style=\"color:red\">薄膜</span>的生长、掺杂以及极性表面的化学特性有着不可忽略的影响.论述了GaN处延<span style=\"color:red\">薄膜</span>极性的检测和极性对<span style=\"color:red\">薄膜</span>生长的影响;同时回顾了与之相应的腐蚀、表面结构、晶体生长和器件的近期研究成果.","authors":[{"authorName":"李东升","id":"743b6f95-621a-4a06-9b69-f730d565d15c","originalAuthorName":"李东升"},{"authorName":"杨德仁","id":"165538f6-d087-414b-bf22-8c6dae92b7fb","originalAuthorName":"杨德仁"},{"authorName":"王淦","id":"8432cbcb-7f15-4928-a83d-17d9a805fa30","originalAuthorName":"王淦"},{"authorName":"阙端麟","id":"4e0c4f36-9ad5-4a1e-9da5-e700574c1fee","originalAuthorName":"阙端麟"}],"doi":"","fpage":"38","id":"6aff1fb6-56ad-4100-9e68-5c3622c8f52d","issue":"9","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"afc9bb2e-558e-4ce2-81e7-c27cc990bf31","keyword":"氮化镓","originalKeyword":"氮化镓"},{"id":"a736db77-48f6-4710-a2b6-2739ab03f117","keyword":"极性","originalKeyword":"极性"}],"language":"zh","publisherId":"cldb200109012","title":"氮化镓<span style=\"color:red\">薄膜</span>的极性","volume":"15","year":"2001"}],"totalpage":1034,"totalrecord":10332}