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A COMPREHENSIVE INVESTIGATION ON A PECULIAR DEFECT IN WURTZITE GaN FILM

S.Q.Wang1 , 2) and H.Q.Ye1) 1) Laboratory of Atomic Imaging of Solids , Institute of Metal Research , The Chinese Academy of Sciences , Shenyang 110015 , China 2)Department of Materials Science and Metallurgy , University of Cambridge , Cambridge CB2 3QZ , UK

金属学报(英文版)

Apeculiar crystal defect was observed by experiment of high resolution electron microscopy( HREM) .It wasidentifiedtoformed bytwothreading dislocationsand asegmentof(11 20) domain boundary. An atomicstructure model was proposed for the anomalous defect. Theresultofthe weak beam experimentofelectron microscopeaffirmedthesuggested model.Thestructuralpropertiesofseveral GaN(11 2 0) domain boundaries werestudied by Molec ular Dynamicscalculations. Thetheoreticalresultsshowedthatthelike atom bonding domain boundary, whichcomposesthe main partofthe peculiar defect, has much higher formationenergy than itcounterpartof unlike atom bonding domain boundary. Theoutcome providesanotherevidenceforthesuggested model.

关键词: HREM , null , null , null , null

纳米复合材料特性分析及界面研究

许荔 , 江晓禹

材料科学与工程学报 doi:10.3969/j.issn.1673-2812.2005.06.038

概述了纳米颗粒增强复合材料的特性与制备方法.并对于分析纳米复合材料的主要观测手段SEM,TEM和HREM分别举例进行分析.分析表明,对于增强颗粒与基体之间的界面进行分析是分析纳米颗粒增强复合材料的力学性能的基础和关键.

关键词: 纳米颗粒增强 , 纳米复合材料 , 界面 , SEM , TEM , HREM

WOx薄膜结晶特性的HREM和STM研究

燕峰 , 王晓光

材料工程 doi:10.3969/j.issn.1001-4381.1999.05.012

对反应溅射沉积的WOx薄膜在电致变色反应中结晶性能的变化进行了研究.结果表明:电致变色反应增加了薄膜的晶体特性,使着退色WOx薄膜的选区电子衍射呈现明显的多晶环特性,而原始沉积态WOx薄膜为非晶光晕衍射特性.STM分析得知,电致变色反应使薄膜的表面形貌也发生了剧烈的变化.

关键词: 电致变色反应 , 晶体特性 , HREM , STM

低辐射薄膜TiO2-Ag-TiO2-siO的纳米尺度显微结构

詹倩 , 于荣 , 贺连龙 , 李斗星 , 郭晓楠

金属学报 doi:10.3321/j.issn:0412-1961.2001.04.001

成功地制备了TiO2-Ag-TiO2-SiO超薄多层膜的截面样品,并对其微观结构进行TEM,HREM及纳米束EDS分析.结果表明,薄膜各层厚度均匀,界面明锐、光滑.Ag层由纳米晶组成,而TiO2和SiO层为非晶.Ag在膜层中没有扩散或聚团,这也正是保证整个薄膜性能指标的一个重要因素.

关键词: 低辐射薄膜 , 微观结构 , HREM , 纳米束分析

低辐射薄膜TiO2-Ag-TiO2-SiO的纳米尺度显微结构

詹倩 , 于荣 , 贺连龙 , 李斗星 , 郭晓楠

金属学报

成功地制备了TiO2-Ag-TiO2-SiO超薄多层膜的截面样品,并对其微观结构进行TEM,HREM及纳米束EDS分析.结果表明,薄膜各层厚度均匀,界面明锐、光滑.Ag层由纳米晶组成,而TiO2和SiO层为非晶.Ag在膜层中没有扩散或聚团,这也正是保证整个薄膜性能指标的一个重要因素.

关键词: 低辐射薄膜 , null , null , null

Effects of Treatment Temperature on the Microstructure and Magnetic Properties of Fe-N Thin Films

B.L. Li , H.M. Du , X.F. Wang , E.Y. Jiang

金属学报(英文版)

Fe-N thin films were fabricated on both 100Si and NaCl substrates by RF magnetron sputtering under low nitrogen partial pressure. The microstructure and magnetic properties of Fe-N thin films were investigated with the increase of the substrate temperature (Ts) and the annealing temperature (Ta). It is more difficult for nitrogen atoms to enter the Fe lattice under higher Ts above 150℃. The phase evolution is visible at higher Ta above 200℃. The phase transformation of α''-Fe16N2 occurred at 400℃. The change of crystal size with Ta was clearly visible from bright and dark field images. The clear high-resolution electron microscope (HREM) images of 110α, 111γ', 112α'', and 200α'' phases were observed. The interplanar distances from TEM and HREM match the calculated values very well. From the results of the vibrating sample magnetometer (VSM), the good magnetic properties of Fe-N films were obtained at 150℃ of Ts and 200℃ of Ta, respectively.

关键词: Fe-N thin film , null , null , null

Characterization of{101}*and{100}*α-Si_3N_4 Whiskers by HREM

ZHOU Yanchun ZHOU Jing CHANG Xin XIA Fei SHI Changxu ** Institute of Metal Research , Academia Sinica , Shenyang , 110015 , China+ To whom correspondence should be addressed

材料科学技术（英）

The microstructure of both {10(?)1} and {10(?)0} (directions perpendicular to the {10(?)1} and {10(?)0} planes) α-Si_3N_4 whiskers were investi- gated by high resolution electron microscopy (HREM).On one side of the {10(?)1} α-Si_3N_4 whiskers many planar defects were ob- served,two kinds of micrograins on one side of the {10(?)0} whiskers were found.In one type,sepa- rated α-Si_3N_4 (28 H) micrograins had the same orientation with respect to the matrix whisker;in the other type,connected polymicrograins consisted of both α-and β-Si_3N_4 (14H).

关键词: α-Si_3N_4 whisker , null , null

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