{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"全光通信网络是光通信发展的必然趋势,<span style=\"color:red\">光</span><span style=\"color:red\">无</span><span style=\"color:red\">源</span><span style=\"color:red\">器件</span>是组建全光通信网络的重要元<span style=\"color:red\">器件</span>.通过介绍<span style=\"color:red\">光</span><span style=\"color:red\">无</span><span style=\"color:red\">源</span><span style=\"color:red\">器件</span>——光纤活动连接器、<span style=\"color:red\">光</span>分路器、隔离器、衰减器、光波分复用器在有线电视(CATV)网络中的使用情况,分析了常用光<span style=\"color:red\">无</span><span style=\"color:red\">源</span><span style=\"color:red\">器件</span>的性能参数.结合有线电视网的发展状况,设计出<span style=\"color:red\">光</span><span style=\"color:red\">无</span><span style=\"color:red\">源</span><span style=\"color:red\">器件</span>在有线电视网络改造中的应用.","authors":[{"authorName":"杨东","id":"e4b466d7-e6b3-459e-9074-cbb8e02e9481","originalAuthorName":"杨东"}],"doi":"","fpage":"140","id":"aaa861ec-de28-45e4-bf7d-11b48707cd1e","issue":"5","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"08159c90-dd51-4ee5-9be3-9f3e029a70a2","keyword":"全光通信","originalKeyword":"全光通信"},{"id":"c4bf1d32-3934-4450-8811-ff6f9625dbd0","keyword":"<span style=\"color:red\">光</span><span style=\"color:red\">无</span><span style=\"color:red\">源</span><span style=\"color:red\">器件</span>","originalKeyword":"光无源器件"},{"id":"2b5fe188-987a-48c5-8933-a8e21acca009","keyword":"有线电视","originalKeyword":"有线电视"},{"id":"426b75c9-0a9d-4c25-8e12-805a1b8a1951","keyword":"性能参数","originalKeyword":"性能参数"},{"id":"777c6715-715d-4a8f-8a60-d3a4204b31ab","keyword":"应用","originalKeyword":"应用"}],"language":"zh","publisherId":"gnclyqjxb201405009","title":"<span style=\"color:red\">光</span><span style=\"color:red\">无</span><span style=\"color:red\">源</span><span style=\"color:red\">器件</span>在有线电视网中的应用","volume":"20","year":"2014"},{"abstractinfo":"<span style=\"color:red\">光</span>互连是突破传统微电子IC性能瓶颈的重要技术手段,对推进\"后摩尔时代\"微电子技术的发展和高性能计算技术的实现具有关键性意义.本文在归纳总结不同层次<span style=\"color:red\">光</span>互连结构特点的基础上,对片上光互连(on-chip or intra-chip optical interconnects)所涉及的若干种<span style=\"color:red\">无</span><span style=\"color:red\">源</span>光子集成<span style=\"color:red\">器件</span>的设计制备及性能特点进行了分析介绍,这些<span style=\"color:red\">器件</span>包括SOI亚波长光子线波导、SOI光子晶体波导、MMI分束/合束器、微环/微盘谐振腔滤波器、光子晶体微腔耦合滤波器、光子晶体反射镜等,是硅基片上光互连的基本构成单元.本文对这些关键性光子集成<span style=\"color:red\">器件</span>的国内最新研究进展进行了报道.","authors":[{"authorName":"陈少武","id":"ef84679e-40ae-4cad-abd6-b3458f588cff","originalAuthorName":"陈少武"},{"authorName":"余金中","id":"e8b03239-17b1-4c74-9d1c-1a01296062c1","originalAuthorName":"余金中"},{"authorName":"徐学俊","id":"432ccf5f-7459-4642-ba4a-f29e3a978e03","originalAuthorName":"徐学俊"},{"authorName":"黄庆忠","id":"c91e56eb-62a8-48c2-9945-90780cd86fd0","originalAuthorName":"黄庆忠"},{"authorName":"余和军","id":"40b47125-6ae6-4432-b8e3-0ce29e945677","originalAuthorName":"余和军"},{"authorName":"屠晓<span style=\"color:red\">光</span>","id":"53d5e4f1-7cef-4a2f-a285-b7bf880ad16e","originalAuthorName":"屠晓光"},{"authorName":"李运涛","id":"0914d889-a53a-4b2b-9b50-bdde9ed8aadd","originalAuthorName":"李运涛"}],"doi":"","fpage":"153","id":"0fbeca14-0bac-4474-859b-98a6c0fa342f","issue":"1","journal":{"abbrevTitle":"CLKXYGCXB","coverImgSrc":"journal/img/cover/CLKXYGCXB.jpg","id":"13","issnPpub":"1673-2812","publisherId":"CLKXYGCXB","title":"材料科学与工程学报"},"keywords":[{"id":"255af014-1a90-4f52-9802-8a496f757f9e","keyword":"硅基光子学","originalKeyword":"硅基光子学"},{"id":"f28b5f71-990f-45ba-9460-5c9e129e6976","keyword":"片上光互连","originalKeyword":"片上光互连"},{"id":"968b5fb6-e13d-4284-84a1-bf75938c53b2","keyword":"CMOS微纳加工工艺","originalKeyword":"CMOS微纳加工工艺"},{"id":"488b222a-02f4-41ed-b383-a593f6938a11","keyword":"<span style=\"color:red\">无</span><span style=\"color:red\">源</span>光子集成<span style=\"color:red\">器件</span>","originalKeyword":"无源光子集成器件"},{"id":"ffc49246-3ed6-4376-97d3-f27a395f8500","keyword":"光子线波导","originalKeyword":"光子线波导"},{"id":"81b6f618-3b9c-4267-bed4-51e7c2cd32ed","keyword":"微腔滤波器","originalKeyword":"微腔滤波器"}],"language":"zh","publisherId":"clkxygc200901039","title":"面向硅基<span style=\"color:red\">光</span>互连应用的<span style=\"color:red\">无</span><span style=\"color:red\">源</span>光子集成<span style=\"color:red\">器件</span>研究进展","volume":"27","year":"2009"},{"abstractinfo":"采用气态<span style=\"color:red\">源</span>分子束外延(GSMBE)技术在InP(100)衬底上生长了InAsP/InGaAsP应变补偿量子阱为有<span style=\"color:red\">源</span>层和InP/InGaAsP分布布拉格反射镜(DBR)为上、下腔镜的垂直腔面发射激光器(VCSEL)结构.通过湿法刻蚀和聚酰亚胺隔离工艺制作出了1.3μm VCSEL,<span style=\"color:red\">器件</span>在室温下可连续单模激射,阈值电流约为4mA.实验测得的VCSEL结构反射光谱包括高反射带和腔模等参数与传递矩阵法拟合的反射光谱相符合;边发射电致发光谱的增益峰与腔模位置一致.","authors":[{"authorName":"刘成","id":"33769443-652a-47b2-9465-bdd075970b0b","originalAuthorName":"刘成"},{"authorName":"吴惠桢","id":"5558ce75-163b-4688-bd24-b8791d3fb07b","originalAuthorName":"吴惠桢"},{"authorName":"劳燕锋","id":"9f1cbb4f-8191-4281-afbc-acc332220c67","originalAuthorName":"劳燕锋"},{"authorName":"黄占超","id":"2426566e-22bc-474e-b439-45272b75883c","originalAuthorName":"黄占超"},{"authorName":"曹萌","id":"307a1579-fa16-4fe4-8c10-2c73c2de77b8","originalAuthorName":"曹萌"}],"doi":"10.3969/j.issn.1007-4252.2005.02.010","fpage":"173","id":"269a16ea-0c86-4e40-8158-aaed427ad68b","issue":"2","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"755b8095-6c30-4ad8-b383-bf9dc511b651","keyword":"垂直腔面发射激光器","originalKeyword":"垂直腔面发射激光器"},{"id":"cd71a4b5-64f4-4f0d-9324-690700c55b42","keyword":"气态<span style=\"color:red\">源</span>分子束外延","originalKeyword":"气态源分子束外延"},{"id":"af2d9fe2-8a9b-4694-a849-490e85ea05c6","keyword":"光电特性","originalKeyword":"光电特性"}],"language":"zh","publisherId":"gnclyqjxb200502010","title":"气态<span style=\"color:red\">源</span>分子束外延1.3μm VCSEL<span style=\"color:red\">器件</span>结构","volume":"11","year":"2005"},{"abstractinfo":"研究了不同厚度有<span style=\"color:red\">源</span>层的顶电极CuPc-OTFT<span style=\"color:red\">器件</span>的电学特性.发现<span style=\"color:red\">器件</span>的性能与有<span style=\"color:red\">源</span>层厚度有依赖关系,其中,有<span style=\"color:red\">源</span>层厚度为20 nm的<span style=\"color:red\">器件</span>性能最好.在有<span style=\"color:red\">源</span>层厚度大于20 nm时,有<span style=\"color:red\">源</span>层厚度的增大不但分去一部分栅电压而且还增大了<span style=\"color:red\">源</span>、漏电极的接触电阻,从而不利于<span style=\"color:red\">器件</span>性能的提高.但当有<span style=\"color:red\">源</span>层厚度小于20 nm以后<span style=\"color:red\">器件</span>的性能开始降低.我们认为当有<span style=\"color:red\">源</span>层厚度降低到一定程度时,有<span style=\"color:red\">源</span>层上表面的表面态会使有机材料的隙态浓度增加从而对沟道载流子迁移率产生不良影响以及使<span style=\"color:red\">器件</span>的阈值电压增大.","authors":[{"authorName":"袁剑峰","id":"51e95a86-59b4-4ded-8a3c-25a12fcddfec","originalAuthorName":"袁剑峰"},{"authorName":"闫东航","id":"9fb1cb2c-d391-47b4-8fd8-bab5aaedbc99","originalAuthorName":"闫东航"},{"authorName":"许武","id":"a524f932-5e77-47f4-bcba-686535dec590","originalAuthorName":"许武"}],"doi":"10.3969/j.issn.1007-2780.2004.01.004","fpage":"14","id":"981da851-c345-46ff-8642-4d1645920dcd","issue":"1","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"00b1cbe2-e255-4003-9ad9-a762ce1a9081","keyword":"有机薄膜晶体管","originalKeyword":"有机薄膜晶体管"},{"id":"435f3a1b-abb0-4bb0-8222-ee64127a7a07","keyword":"有<span style=\"color:red\">源</span>层","originalKeyword":"有源层"},{"id":"704b9cc8-3020-47d0-9ecb-ae4602201b28","keyword":"厚度","originalKeyword":"厚度"}],"language":"zh","publisherId":"yjyxs200401004","title":"有<span style=\"color:red\">源</span>层厚度对CuPc-OTFT<span style=\"color:red\">器件</span>性能的影响","volume":"19","year":"2004"},{"abstractinfo":"低温共烧陶瓷技术是近年发展起来的令人瞩目的整合组件技术,已经成为<span style=\"color:red\">无</span><span style=\"color:red\">源</span>集成的主流技术,成为无源元件领域的发展方向和新元件产业的经济增长点.介绍了目前LTCC<span style=\"color:red\">无</span><span style=\"color:red\">源</span>集成技术及其国内外研究动态和应用前景.","authors":[{"authorName":"王悦辉","id":"e5358271-dbde-48b7-9b52-130bc08c8ba6","originalAuthorName":"王悦辉"},{"authorName":"周济","id":"3f5823f4-d6aa-4e9a-899a-143129e1bd76","originalAuthorName":"周济"},{"authorName":"崔学民","id":"fb4cfa76-1f7b-4db8-8022-378d2afead85","originalAuthorName":"崔学民"},{"authorName":"沈建红","id":"5e4b8a02-4564-4845-92c1-69fb83dd373e","originalAuthorName":"沈建红"}],"doi":"","fpage":"83","id":"d902dfb4-8a07-44b2-bd38-950bedad6422","issue":"9","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"28787c38-2934-47c8-b6f7-c84772ebd69f","keyword":"低温共烧陶瓷","originalKeyword":"低温共烧陶瓷"},{"id":"40204088-938a-45bb-ac07-a89be8c639e2","keyword":"<span style=\"color:red\">无</span><span style=\"color:red\">源</span>集成","originalKeyword":"无源集成"},{"id":"668879e8-0bc4-49e8-a681-6e7a6e73a2a9","keyword":"电容器","originalKeyword":"电容器"},{"id":"2b1545fa-4da1-4bf8-ace5-9d9dc1bc9d7c","keyword":"电阻器","originalKeyword":"电阻器"}],"language":"zh","publisherId":"cldb200509024","title":"低温共烧陶瓷<span style=\"color:red\">无</span><span style=\"color:red\">源</span>集成技术及其应用","volume":"19","year":"2005"},{"abstractinfo":"本文对具有不同的栅<span style=\"color:red\">源</span>双场板结构的p-GaN栅HEMT<span style=\"color:red\">器件</span>的性能进行了比较,利用半导体<span style=\"color:red\">器件</span>仿真工具Synopsys TCAD对<span style=\"color:red\">器件</span>电学特性进行了分析.仿真结果显示:栅<span style=\"color:red\">源</span>复合场板结构能改善栅场板边缘的电场峰值,在<span style=\"color:red\">源</span>极场板边缘产生一个新的峰值,可使<span style=\"color:red\">器件</span>的击穿电压提高到1365V;间断栅场板与<span style=\"color:red\">源</span>场板复合结构,能在场板间隙位置产生新的电场峰值,更充分的利用漂移区耐压,使其击穿电压值达到1478V;栅<span style=\"color:red\">源</span>复合间断场板结构能缓解<span style=\"color:red\">源</span>场板对栅间断处电场峰值的抑制作用,<span style=\"color:red\">器件</span>击穿电压提高到最大值1546V.","authors":[{"authorName":"王立东","id":"e2400892-389c-4064-b4ac-0ab98ea7ea12","originalAuthorName":"王立东"},{"authorName":"王中健","id":"28f3c5aa-8b92-4342-9335-6f24f2e95c5b","originalAuthorName":"王中健"},{"authorName":"程新红","id":"fb2b3028-c70d-4143-8b71-c6c84c4bae2b","originalAuthorName":"程新红"},{"authorName":"万里","id":"a410715c-1391-4731-aa40-6b7e62a2abea","originalAuthorName":"万里"}],"doi":"","fpage":"7","id":"7e8f94cb-9a25-4ef7-95e8-6c1b917050f2","issue":"1","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"7b552ba3-e04b-4953-a748-1ea5c5e52411","keyword":"AlGaN/GaN异质结","originalKeyword":"AlGaN/GaN异质结"},{"id":"5dfc411c-9542-4ed0-99ae-f10cecc912f1","keyword":"高迁移率晶体管(HEMT)","originalKeyword":"高迁移率晶体管(HEMT)"},{"id":"6dfd4075-79e9-4172-b4e2-22c6c3f54214","keyword":"复合场板","originalKeyword":"复合场板"},{"id":"a6dcff1c-0f6b-4531-b326-f1149aa45c7f","keyword":"电场峰值","originalKeyword":"电场峰值"},{"id":"4cda4b68-90cc-41bd-a36a-89d8de8b6311","keyword":"击穿电压","originalKeyword":"击穿电压"}],"language":"zh","publisherId":"gnclyqjxb201401002","title":"栅<span style=\"color:red\">源</span>双场板对GaN HEMT<span style=\"color:red\">器件</span>性能的影响","volume":"20","year":"2014"},{"abstractinfo":"从OLED的结构特性与发光原理出发,结合简单的电路模型和实验中观察到的现象分析了交叉效应的成因,提出了一种简单实用的驱动电路结构,利用反向电压抑制法有效地解决了无<span style=\"color:red\">源</span>OLED显示时的交叉效应问题,最后给出了对电路结构进行恒流源改进的设想.","authors":[{"authorName":"冯永茂","id":"d93dc632-25bb-444b-864d-8d851743c323","originalAuthorName":"冯永茂"},{"authorName":"王瑞<span style=\"color:red\">光</span>","id":"c291fb7f-ddd2-48a5-8e57-29bac5c08346","originalAuthorName":"王瑞光"},{"authorName":"罗锦","id":"aef056d9-cc94-4d52-ac3d-52c8f724db41","originalAuthorName":"罗锦"},{"authorName":"郑喜凤","id":"5697307c-b025-428b-877b-5d73a976de99","originalAuthorName":"郑喜凤"}],"doi":"10.3969/j.issn.1007-2780.2003.05.009","fpage":"362","id":"c306ab2b-3540-4da0-9bcf-2d8c5ba4745c","issue":"5","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"9c330c6c-618a-446d-888c-34ab8fdd46e9","keyword":"OLED","originalKeyword":"OLED"},{"id":"952610c5-530a-4bd7-9520-c580bd3a16e2","keyword":"<span style=\"color:red\">无</span><span style=\"color:red\">源</span>驱动","originalKeyword":"无源驱动"},{"id":"94f37bed-6335-4ee0-a3f6-ed6b34e075d9","keyword":"交叉效应","originalKeyword":"交叉效应"},{"id":"f2ff6eab-9522-4a58-ab3e-8a77ddf6b613","keyword":"反向电压控制","originalKeyword":"反向电压控制"}],"language":"zh","publisherId":"yjyxs200305009","title":"<span style=\"color:red\">无</span>交叉效应<span style=\"color:red\">无</span><span style=\"color:red\">源</span>OLED驱动电路的实现","volume":"18","year":"2003"},{"abstractinfo":"基于离子束辅助镀膜技术,自主研制了一款新型霍尔<span style=\"color:red\">无</span>栅离子<span style=\"color:red\">源</span>,利用该离子<span style=\"color:red\">源</span>,采取离子束辅助沉积方法,在玻璃基底上镀制了多种光学薄膜,并对所镀制光学薄膜的性能进行了测试.测试结果表明:所研制的霍尔<span style=\"color:red\">无</span>栅离子<span style=\"color:red\">源</span>制备的各种光学薄膜,其膜层强度、附着性、耐腐蚀性以及光学性质都比常规热蒸发工艺所制得的薄膜有明显改善.","authors":[{"authorName":"王稳奇","id":"8ae58cc7-ac0c-45ea-8de9-ae9051d27de0","originalAuthorName":"王稳奇"},{"authorName":"朱昌","id":"ce6c695a-1405-48e8-9bbc-baff4b994e67","originalAuthorName":"朱昌"}],"doi":"10.3969/j.issn.1001-3660.2012.02.017","fpage":"58","id":"c3fa66b1-0a30-40e9-9fb8-25b4fedc6940","issue":"2","journal":{"abbrevTitle":"BMJS","coverImgSrc":"journal/img/cover/BMJS.jpg","id":"3","issnPpub":"1001-3660","publisherId":"BMJS","title":"表面技术   "},"keywords":[{"id":"976ffb80-842b-40fe-b18a-b9f608ad4d8f","keyword":"霍尔<span style=\"color:red\">无</span>栅离子<span style=\"color:red\">源</span>","originalKeyword":"霍尔无栅离子源"},{"id":"10937b16-2a04-4b2f-b1fa-d98087621dd2","keyword":"离子束辅助沉积","originalKeyword":"离子束辅助沉积"},{"id":"e0a26606-2a53-41bc-ab90-f86a921e215e","keyword":"光学薄膜","originalKeyword":"光学薄膜"}],"language":"zh","publisherId":"bmjs201202017","title":"霍尔<span style=\"color:red\">无</span>栅离子<span style=\"color:red\">源</span>的研制及应用","volume":"41","year":"2012"},{"abstractinfo":"研制出一种三角槽型透明高分子聚合物光栅与该聚合物平板间填充有机非线性光学液体的夹层结构<span style=\"color:red\">器件</span>,具有非线性自调制<span style=\"color:red\">光</span>限幅功能.实验测得该<span style=\"color:red\">器件</span>对较弱的532 nm波长的YAG倍频激光透过率大于60 %,对较强激光透过率小于2 %～3 %.理论预期在激光波长400～700 nm都有<span style=\"color:red\">光</span>限幅特性,且愈靠近532 nm波长,激光限幅功能愈强.首次从实验上验证了该非线性光栅具有自适应宽带<span style=\"color:red\">光</span>限幅的功能.它不仅可以实现可调谐<span style=\"color:red\">光</span>限幅,且对所设计的激光波长,达到能量低于人眼安全阈值的高效激光防护成为可能.","authors":[{"authorName":"关中素","id":"5c26ad6e-4c83-4ebc-aeee-59c2424c4bcd","originalAuthorName":"关中素"},{"authorName":"掌蕴东","id":"774e35f2-3242-484b-95b5-fb40902496b4","originalAuthorName":"掌蕴东"},{"authorName":"马少杰","id":"5f9e4fa2-50f2-48f5-95c5-8dc1309d47b1","originalAuthorName":"马少杰"},{"authorName":"陈明","id":"fdc8f901-52b4-4c99-bdc6-7081b812df39","originalAuthorName":"陈明"},{"authorName":"徐迈","id":"91fbad75-ebe7-41cb-9550-a4e884dcea37","originalAuthorName":"徐迈"},{"authorName":"王维彪","id":"ab80bfb0-24ee-4384-871c-9cfa37fdd9f4","originalAuthorName":"王维彪"}],"doi":"10.3969/j.issn.1007-2780.2005.02.006","fpage":"111","id":"afae868e-8b3a-4151-ab57-ad1107ffc175","issue":"2","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"44bf0b0a-b409-4c63-a416-cac6a2e28b07","keyword":"光学限幅器","originalKeyword":"光学限幅器"},{"id":"1aea3811-eb13-46ca-8d89-2b4e3462bf46","keyword":"非线性光栅","originalKeyword":"非线性光栅"},{"id":"7bfefa73-e7f7-4e34-bc69-b0bf7c879496","keyword":"非线性自调制","originalKeyword":"非线性自调制"}],"language":"zh","publisherId":"yjyxs200502006","title":"非线性光栅自调制<span style=\"color:red\">光</span>限幅<span style=\"color:red\">器件</span>研究","volume":"20","year":"2005"},{"abstractinfo":"15 MeV电子直线加速器驱动的<span style=\"color:red\">光</span>中子<span style=\"color:red\">源</span>装置，将用于中国科学院战略性先导科技专项“钍基熔盐堆”中的核数据初步测量工作、中子探测器的研制和反应堆相关材料的辐照研究等。<span style=\"color:red\">光</span>中子<span style=\"color:red\">源</span>的中子能谱是连续的，中子能量通过中子飞行时间法测量得到，需要利用吸收片确认中子吸收峰，刻度飞行时间，计算等效飞行距离，扣除实验本底等，而实验本底的扣除对最终总截面计算有很大的影响。因此通过Geant4蒙特卡罗模拟软件构建了包括中子<span style=\"color:red\">源</span>、吸收片在内的模拟实验环境；研究了不同吸收片的吸收谱和吸收片厚度的关系，同理论计算值进行了比较，给出了推荐的吸收片厚度值；模拟计算了中子飞行时间谱，并和实验测量结果比较，确定中子等效飞行距离为5.70 m。Geant4的理论计算也可以模拟出多吸收片本底函数曲线，可用于实验数据的本底扣除和误差分析。实验测量、模拟分析以及理论公式计算的吸收片厚度和中子飞行时间参数得到了完全一致的结果，验证了实验测量的可靠性。","authors":[{"authorName":"朱亮","id":"bafd764b-6e12-40f5-8f5f-b1733bb8c39c","originalAuthorName":"朱亮"},{"authorName":"刘龙祥","id":"bbe0fcf4-7f0a-4f50-8ba9-679399f590b7","originalAuthorName":"刘龙祥"},{"authorName":"王宏伟","id":"db7539c5-210c-4bef-891c-f8e98a3b9cb7","originalAuthorName":"王宏伟"},{"authorName":"马余刚","id":"3f12545e-2e74-40cf-b4b0-a616ce942f90","originalAuthorName":"马余刚"},{"authorName":"李琛","id":"faf1d1f6-0ac8-4a64-87e2-13376c8dcf32","originalAuthorName":"李琛"},{"authorName":"张国强","id":"72305ad8-a571-4e10-9b3a-71419884ccc8","originalAuthorName":"张国强"},{"authorName":"张松","id":"9ec007eb-47d4-4d73-8ee1-8a2bbcda229c","originalAuthorName":"张松"},{"authorName":"钟晨","id":"daa394f5-6e17-4487-b5ee-098ef55aa522","originalAuthorName":"钟晨"},{"authorName":"曹喜<span style=\"color:red\">光</span>","id":"5dc8944c-e227-40be-bd03-3c88a63b1367","originalAuthorName":"曹喜光"},{"authorName":"张桂林","id":"1abcb74e-8c55-475e-b8b4-32aacfb8e5e6","originalAuthorName":"张桂林"},{"authorName":"陈金根","id":"c4a272fa-7079-49ec-9f0a-8c18c8072754","originalAuthorName":"陈金根"},{"authorName":"蔡翔舟","id":"0ab6f57b-02cb-4b4b-bd22-f9530b662b5d","originalAuthorName":"蔡翔舟"},{"authorName":"韩建龙","id":"825449ca-dd01-4e10-9aae-f79792141ed5","originalAuthorName":"韩建龙"},{"authorName":"胡继峰","id":"ead763c1-a942-499b-b32f-7eef91ffbfef","originalAuthorName":"胡继峰"},{"authorName":"王小鹤","id":"d8193f84-b2b5-4bdb-ac0b-071d1472401a","originalAuthorName":"王小鹤"}],"doi":"10.11804/NuclPhysRev.33.03.308","fpage":"308","id":"9117816c-77af-44e5-83c4-881dfd41d4f4","issue":"3","journal":{"abbrevTitle":"YZHWLPL","coverImgSrc":"journal/img/cover/YZHWLPL.jpg","id":"78","issnPpub":"1007-4627","publisherId":"YZHWLPL","title":"原子核物理评论   "},"keywords":[{"id":"e02a5344-2c21-4c60-880c-69e81842abfd","keyword":"中子吸收片","originalKeyword":"中子吸收片"},{"id":"ad5184dc-3f29-4070-99cd-4c58e909fcdd","keyword":"Geant4","originalKeyword":"Geant4"},{"id":"97636b35-f5f9-4a82-a2ad-00239351d4e5","keyword":"模拟计算","originalKeyword":"模拟计算"},{"id":"1d6a55d9-289f-437e-9cf8-ba8cdef4a52f","keyword":"蒙特卡罗","originalKeyword":"蒙特卡罗"}],"language":"zh","publisherId":"yzhwlpl201603011","title":"<span style=\"color:red\">光</span>中子<span style=\"color:red\">源</span>上吸收片功能研究","volume":"33","year":"2016"}],"totalpage":1950,"totalrecord":19500}