{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"采用基于密度泛函理论的平面波赝势方法计算了3种模型高氧空位浓度不同的锐钛矿晶体的吸收谱带,发现产生F'色心,而不能产生F色心;锐钛矿高氧空位范围内浓度越高,光能量吸收越强;浓度不同的高氧空位锐钛矿形成不同的吸收谱带;锐钛矿晶体的高氧空位浓度不同,F'色心引起的透射光不同,观察得到的颜色不同,和缺陷化学实验中得到的变化趋势相一致.","authors":[{"authorName":"侯清玉","id":"25da140b-5552-49f0-a801-10714f6cdab0","originalAuthorName":"侯清玉"},{"authorName":"张跃","id":"e85c87f3-bc96-4c88-9828-009ac2092bdf","originalAuthorName":"张跃"},{"authorName":"张涛","id":"a7ef0d3b-d308-4ebe-8806-a225f147ac60","originalAuthorName":"张涛"}],"doi":"","fpage":"190","id":"365d8df4-d6c9-4979-8120-77b821a2ebd3","issue":"2","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"61efde09-5560-4c8a-b701-62c49e2ff617","keyword":"锐钛矿","originalKeyword":"锐钛矿"},{"id":"7b258926-5090-4b77-8f6e-87de81004915","keyword":"高氧空位浓度","originalKeyword":"高氧空位浓度"},{"id":"210f1df2-74e6-4fe5-b22d-cfe088a6a094","keyword":"F'色心","originalKeyword":"F'色心"},{"id":"e0e46954-e9f7-400b-8b91-9ec22a6376ba","keyword":"吸收光谱","originalKeyword":"吸收光谱"},{"id":"8f31ef66-81da-4c57-bc5c-a9c7073653ff","keyword":"第一性原理","originalKeyword":"第一性原理"}],"language":"zh","publisherId":"gncl200902004","title":"锐钛矿高氧空位浓度F'色心吸收光谱的第一性原理研究","volume":"40","year":"2009"},{"abstractinfo":"为了研究TiO2氧空位形成的影响因素,用管式电阻炉在空气、Ar及不同温度下对TiO2烧结.采用扫描电子显微镜(SEM)、X射线衍射(XRD)和X射线光电子能谱(XPS)对烧结TiO2样品的微观形貌、物相组成、元素及价态进行了表征,研究了烧结温度、烧结气氛和Ar+刻蚀对TiO2样品氧空位形成的影响.结果表明:相同气氛下,随着烧结温度的升高,TiO2氧空位浓度逐渐增大;相同温度下,惰性气氛有利于TiO2氧空位的产生;Ar+刻蚀有利于TiO2氧空位的形成.","authors":[{"authorName":"李泽全","id":"f054b6ed-7fc3-415a-972f-75b9bd87b25c","originalAuthorName":"李泽全"},{"authorName":"胡蓉","id":"8a112ff7-44f9-46db-b4f6-dfeaa8ba17bb","originalAuthorName":"胡蓉"},{"authorName":"郭晶","id":"379d0b4a-c61f-447f-ad0b-2463077fa0e8","originalAuthorName":"郭晶"},{"authorName":"茹黎月","id":"dfd4e1c7-10f9-4bb6-b07c-1a6bbb2417d5","originalAuthorName":"茹黎月"},{"authorName":"王海华","id":"c26ba72f-a5e6-47b0-89bf-bc4ac7794938","originalAuthorName":"王海华"}],"doi":"","fpage":"80","id":"425907be-b3de-44ee-aaa7-4a34dc95bdfe","issue":"2","journal":{"abbrevTitle":"CLKXYGY","coverImgSrc":"journal/img/cover/CLKXYGY.jpg","id":"14","issnPpub":"1005-0299","publisherId":"CLKXYGY","title":"材料科学与工艺"},"keywords":[{"id":"e12ad51f-f1c5-4e6d-a623-cc540b365968","keyword":"氧空位","originalKeyword":"氧空位"},{"id":"10a6193a-1df9-47f9-91ab-036c3ae5a8c6","keyword":"TiO2","originalKeyword":"TiO2"},{"id":"246467cb-a256-4d81-b3b4-443d5cc294e5","keyword":"烧结","originalKeyword":"烧结"},{"id":"a8408308-9698-4a32-ae2b-b8a2bd25add7","keyword":"Ar+刻蚀","originalKeyword":"Ar+刻蚀"}],"language":"zh","publisherId":"clkxygy201202015","title":"TiO_2氧空位形成的影响因素","volume":"20","year":"2012"},{"abstractinfo":"采用基于密度泛函理论和广义梯度近似的第一性原理研究了立方相LaAlO3中不同价态氧空位的电子性质.结果表明,氧空位的存在会在立方相LaAlO3的禁带中引入缺陷能级,在氧缺失的条件下,氧空位在立方相LaAlO3中是稳定存在的.随着费米能级位置的改变,具有0价和+2价的氧空位分别为最稳定的电荷状态.LaAlO3中的氧空位具有负U性质,当空位进入到氧化物中时,氧空位会俘获2个空位,达到稳定状态.因此,在LaAlO3高k栅介质中,氧空位为主要俘获电荷的陷阱.","authors":[{"authorName":"孙国栋","id":"d23693b3-d259-4643-a19b-6b9dbc3fb752","originalAuthorName":"孙国栋"},{"authorName":"李辉","id":"c3d6703a-f3a9-4b83-af05-44df35eb7629","originalAuthorName":"李辉"},{"authorName":"邓娟利","id":"f60cf076-d90d-4141-b3c1-adedebeb106c","originalAuthorName":"邓娟利"},{"authorName":"张文雪","id":"c3b6b912-8540-43ff-ac48-b62ff7abd0be","originalAuthorName":"张文雪"},{"authorName":"赵红艳","id":"0325b0f8-5a36-4c8f-aee4-68fac9688f50","originalAuthorName":"赵红艳"},{"authorName":"吕露","id":"05c855b8-e843-4e7f-8a8c-fc8150252f3e","originalAuthorName":"吕露"}],"doi":"","fpage":"1099","id":"ed689e9b-810a-41bb-931c-27a5421551ad","issue":"5","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"a9c7164c-d278-45f5-b45f-494fa5eb94df","keyword":"立方相LaAlO3","originalKeyword":"立方相LaAlO3"},{"id":"4a66620b-c2ed-44b0-a9cc-38bcfb9e49be","keyword":"氧空位","originalKeyword":"氧空位"},{"id":"58ecaad0-ccd3-4c0e-8ffe-4877f3049a15","keyword":"密度泛函理论计算","originalKeyword":"密度泛函理论计算"}],"language":"zh","publisherId":"xyjsclygc201505012","title":"氧空位对立方相LaAlO3电子结构的影响","volume":"44","year":"2015"},{"abstractinfo":"计算了SrTiO3-δ(δ=0,δ=0.125)体系电子结构,分析了氧空位对SrTiO3晶体的价键结构、能带、态密度、分波态密度、差分电荷密度的影响.所有计算都是基于密度泛函理论(DFT)框架下的第一性原理平面波超软赝势方法.计算结果表明:当氧空位浓度δ=0.125时,空位在母体化合物SrTiO3中引入了大量的传导电子,费米能级进入导带,体系显示金属型导电性.由于空位掺杂,导带底附近的态密度发生了畸变,刚性能带模型不再适合描述SrTiO2.875体系.同时,在导带底附近距离费米能级0.3eV处引入了空位能级,这和实验测得的SrTiO3材料内中性氧空位的电离能约为0.4eV相符.此外,Mulliken布局分析、分波态密度和差分电荷密度分析表明,该空位能级主要由与其最近邻的两个Ti原子的3d电子态贡献,并且由该空位引入的导电电子大部分都局域在空位最近邻的两个Ti原子周围.最后,计算了三种典型平衡条件下SrTiO3晶体内中性氧空位的形成能.","authors":[{"authorName":"贠江妮","id":"cb48ec14-e60c-4179-8869-e43d510b6c0d","originalAuthorName":"贠江妮"},{"authorName":"张志勇","id":"e77b7f72-4699-4cca-88ca-998a78a7c56b","originalAuthorName":"张志勇"},{"authorName":"邓周虎","id":"0af7598d-d14f-4cea-a6f7-e2ea710d50b4","originalAuthorName":"邓周虎"},{"authorName":"张富春","id":"8806bd33-1e38-4dbf-87b1-03846fab65c9","originalAuthorName":"张富春"}],"doi":"10.3969/j.issn.1007-4252.2007.06.012","fpage":"572","id":"deaf6279-78d2-4fcd-873c-b746f8d5d598","issue":"6","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报 "},"keywords":[{"id":"8924e27e-692b-4033-898a-053bb45e5584","keyword":"第一性原理计算","originalKeyword":"第一性原理计算"},{"id":"e4ce9f9a-4381-4295-bd02-fb2c3c0bf4c3","keyword":"氧空位","originalKeyword":"氧空位"},{"id":"b0b43c84-1c66-4f89-8a58-267baffe1a81","keyword":"电子结构","originalKeyword":"电子结构"},{"id":"0f60467f-3553-4fea-bb56-7e3f553324e2","keyword":"形成能","originalKeyword":"形成能"}],"language":"zh","publisherId":"gnclyqjxb200706012","title":"SrTiO3材料中氧空位的密度泛函理论","volume":"13","year":"2007"},{"abstractinfo":"中子辐照引起的位移级联能在金属中产生各种缺陷.通过三维分子动力学方法模拟了bcc-Fe在不同空位浓度下中子辐照的位移级联过程.模拟结果表明,在空位浓度0%和初始碰撞原子能量5keV的情形下,位移级联过程会出现大量空位、间隙原子团等缺陷.经过0.5ps后点缺陷数量NF达到最大值1632,之后其逐渐减少,10ps后稳定在60.预置空位的存在加速了级联过程中点缺陷的湮灭.进一步的模拟指出,预置空位浓度越高,则点缺陷复合也就越快.这些结果有助于描述核反应堆结构钢的某些微观失效机理.","authors":[{"authorName":"王建伟","id":"362ef1f2-8939-483e-adf1-4bb0945ff7ec","originalAuthorName":"王建伟"},{"authorName":"尚新春","id":"eee57d7d-1e0e-48a2-b934-e7f20c34c123","originalAuthorName":"尚新春"},{"authorName":"吕国才","id":"3887c370-a0a4-4a65-939f-b9edb2f92857","originalAuthorName":"吕国才"}],"doi":"10.3969/j.issn.1001-4381.2011.10.004","fpage":"15","id":"d2a2fe1c-9d10-4d7a-89e7-596af164d40e","issue":"10","journal":{"abbrevTitle":"CLGC","coverImgSrc":"journal/img/cover/CLGC.jpg","id":"9","issnPpub":"1001-4381","publisherId":"CLGC","title":"材料工程"},"keywords":[{"id":"a4920baa-54e1-42b1-ac54-7ca1fa55406f","keyword":"中子辐照","originalKeyword":"中子辐照"},{"id":"6b62295b-6dc1-414d-8ed8-6e610dde6016","keyword":"分子动力学","originalKeyword":"分子动力学"},{"id":"57124273-14f4-4330-bfd4-06db4078525a","keyword":"空位浓度","originalKeyword":"空位浓度"},{"id":"1de57831-dc3b-4c6d-b983-d023055231a3","keyword":"位移级联","originalKeyword":"位移级联"},{"id":"bf42fa28-7035-40d5-adaa-6ca76ea176aa","keyword":"间隙原子团","originalKeyword":"间隙原子团"}],"language":"zh","publisherId":"clgc201110004","title":"bcc-Fe空位浓度对辐照损伤影响的分子动力学模拟","volume":"","year":"2011"},{"abstractinfo":"自支撑硅氧碳纳米镶嵌复合薄膜具有细小等轴β-SiC纳米晶弥散分布在非晶态相SiOxCy和游离碳基体的复合结构.利用电子顺磁共振谱(EPR)仪对900~1 200 ℃终烧薄膜复合结构中的氧空位形成进行分析;采用丝网印刷法在薄膜表面获得两条平行高温银浆电路层,并以其为散热基板进行LED器件板上芯片封装(COB).通过扫描电镜(SEM)与光学显微镜对薄膜微观形貌及封装结构进行观察,并通过LED热光参数测试仪对其结温进行探究.结果表明,终烧温度升高,薄膜氧空位浓度增大,g因子接近自由电子值2.0023.高温银浆导电层均匀致密保证良好电导效果.1 200 ℃终烧薄膜作为散热基板具有较好热传导与绝缘特性,其封装LED结温约为33.7 ℃,低于120 ℃限制,有望规模应用于大功率LED器件领域.","authors":[{"authorName":"杨敏","id":"d1e6fc2c-8a42-4327-a6ec-d2cf77c4414c","originalAuthorName":"杨敏"},{"authorName":"毛宇","id":"1ab0f516-da66-4ff7-82c8-4d762a80bc67","originalAuthorName":"毛宇"},{"authorName":"陈奋","id":"38007d6a-a5c5-43e8-b352-8f5b78f39f52","originalAuthorName":"陈奋"},{"authorName":"周瑞","id":"bf3f786f-b711-42f6-a07b-e760a3f86462","originalAuthorName":"周瑞"},{"authorName":"廖亮","id":"65a9dcd8-dde3-4392-b28b-75e2b9a8ad00","originalAuthorName":"廖亮"},{"authorName":"陈增","id":"04e33564-aae5-4723-9d0d-65fc6083a919","originalAuthorName":"陈增"},{"authorName":"刘乐雨","id":"8544d6ae-ea68-4d26-af7b-4f08eebbd596","originalAuthorName":"刘乐雨"},{"authorName":"姚荣迁","id":"52639e01-2eba-43c4-b3a0-49d93bcff6f8","originalAuthorName":"姚荣迁"}],"doi":"10.3969/j.issn.1001-9731.2017.06.036","fpage":"6199","id":"6d6cacf8-31c1-4bc6-abf0-5b9c09084bbc","issue":"6","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"b206f15f-7de0-4245-8e43-797a7d068794","keyword":"硅氧碳复合薄膜","originalKeyword":"硅氧碳复合薄膜"},{"id":"44dc5f1a-cad7-4525-9395-a96ed08d9bdc","keyword":"氧空位","originalKeyword":"氧空位"},{"id":"50a25703-7672-4717-9e38-2291d7f037a8","keyword":"基板","originalKeyword":"基板"},{"id":"da4dd6e8-3822-4378-8e4e-5ace60e072ed","keyword":"结温","originalKeyword":"结温"}],"language":"zh","publisherId":"gncl201706036","title":"硅氧碳纳米镶嵌复合薄膜的氧空位形成与散热基板封装","volume":"48","year":"2017"},{"abstractinfo":"利用第一性原理对Ag,N,K三种不同族元素掺杂氧化锌的电子结构进行了研究,计算了完整晶胞和存在氧空位缺陷时掺杂晶胞的品格结构、氧空位形成能、态密度及能带结构.氧空位会使受主掺杂的晶格常数及晶胞体积变大;在钾掺杂的晶胞中氧空位的形成能更低,更容易产生氧空位;三种不同的掺杂体系中,Ag掺杂的空穴电导率最高;最后分析了氧空位对三种掺杂体系导电性的影响.","authors":[{"authorName":"郭保智","id":"783aedfc-d261-4ac1-b2d2-17b45fc3a642","originalAuthorName":"郭保智"},{"authorName":"刘永生","id":"da7e30bc-cb0b-4044-b1cb-0877c231c2d2","originalAuthorName":"刘永生"},{"authorName":"武新芳","id":"1b06aea4-0c76-477c-a223-8d7cea7acc51","originalAuthorName":"武新芳"},{"authorName":"房文健","id":"e34dfee3-4b66-4b22-90ce-12a9cfd86545","originalAuthorName":"房文健"},{"authorName":"彭麟","id":"bf5ada6e-0fc9-46ff-a52c-767ca8f37716","originalAuthorName":"彭麟"},{"authorName":"高湉","id":"c0ca5011-61e0-4005-bfec-905d73d346d4","originalAuthorName":"高湉"}],"doi":"","fpage":"211","id":"a61da183-4474-4d11-8aa0-bce417beeb60","issue":"1","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"307c7e43-5d37-4408-98c7-99e96068a77c","keyword":"ZnO","originalKeyword":"ZnO"},{"id":"363352b9-87d4-401f-b8e6-8f4feff9adff","keyword":"掺杂","originalKeyword":"掺杂"},{"id":"ccffbac4-2c0a-46c3-ad9c-3ad689c1dd92","keyword":"氧空位","originalKeyword":"氧空位"},{"id":"7a91fa04-dbb8-4149-a388-90eb872593f0","keyword":"第一性原理","originalKeyword":"第一性原理"}],"language":"zh","publisherId":"rgjtxb98201401036","title":"ZnO氧空位与掺杂原子相互作用第一性原理研究","volume":"43","year":"2014"},{"abstractinfo":"阐明了电负性理论是经典理论,不能准确判断只有氧空位锐钛矿半导体超胞与取代氧掺碳原子和氧空位同时存在的锐钛矿半导体超胞的成键特征,而共价键和混合键是量子效应问题,用多原子系统的Schrdinger方程或电子密度函数理论能完满解释.因此,所有计算都是基于密度泛函理论(DFT)框架下的第一性原理平面波超软赝势方法.研究只有氧空位锐钛矿TiO2的键型与取代氧掺碳和氧空位共存的锐钛矿TiO2的键型后发现,由共价键向离子键转化趋势的成键特征,纠正了由共价键向共价键转化的错误结论.","authors":[{"authorName":"侯清玉","id":"4a968a0b-f3d9-4d4a-8f36-00332ac0eb8f","originalAuthorName":"侯清玉"},{"authorName":"张跃","id":"f51cc1e8-ac79-4275-9b18-a0006b2808d7","originalAuthorName":"张跃"},{"authorName":"张涛","id":"4f4765be-9a9d-4bf9-b0ee-4037bd8b1348","originalAuthorName":"张涛"}],"doi":"","fpage":"789","id":"1a72f6b6-217b-4658-9a02-fc937e1f8a39","issue":"5","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"b5e71d66-10c3-48ed-a7ff-fb788f7106d2","keyword":"碳掺杂","originalKeyword":"碳掺杂"},{"id":"1eeab3f1-382b-4f31-bc0d-9f8e2f92e0f7","keyword":"氧空位","originalKeyword":"氧空位"},{"id":"92a39a74-5912-48b6-86bc-e2fbd851b47a","keyword":"锐钛矿TiO2","originalKeyword":"锐钛矿TiO2"},{"id":"9c5a7bf1-f877-456d-8b10-c1d17e64127e","keyword":"键型","originalKeyword":"键型"},{"id":"dc5b14d3-5d1c-4d74-8aba-2adb65c23201","keyword":"理论","originalKeyword":"理论"}],"language":"zh","publisherId":"gncl200805025","title":"锐钛矿氧空位与氧空位和碳掺杂两种模型键型转化的理论研究","volume":"39","year":"2008"},{"abstractinfo":"本文利用完全势缀加平面波局域密度泛函近似,按照能量最低原理采用共轭梯度方法,对含铅氧空位对的PbWO4晶体进行结构优化处理.在此基础上,计算了含铅氧空位对的PbWO4晶体的电子结构、复数折射率、介电函数及吸收光谱,并与完整的PbWO4晶体进行了比较.结果表明:PWO晶体中铅氧空位对的存在对PbWO4晶体的光学性质没有显著的影响.","authors":[{"authorName":"刘廷禹","id":"fa7bace8-e8d7-4bce-a6fe-0f9f464aae43","originalAuthorName":"刘廷禹"},{"authorName":"张启仁","id":"d9812a09-8500-4764-9e82-6e07101f24c3","originalAuthorName":"张启仁"},{"authorName":"庄松林","id":"30911a76-a0b0-4076-8bf7-0aec2dbd689b","originalAuthorName":"庄松林"}],"doi":"10.3969/j.issn.1000-985X.2005.03.026","fpage":"500","id":"5804173b-a33e-476a-b16a-c52a6bf41de9","issue":"3","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"906164f4-b260-47cd-b586-6421f22bb8ae","keyword":"电子结构","originalKeyword":"电子结构"},{"id":"334d3315-b267-46bd-94bb-10f89557b572","keyword":"光学性质","originalKeyword":"光学性质"},{"id":"c625c027-5357-42a4-a8ba-9cd6db66dc1d","keyword":"PbWO4晶体","originalKeyword":"PbWO4晶体"},{"id":"ac3fa275-3b88-475f-9284-4e4237b79e13","keyword":"铅氧空位对","originalKeyword":"铅氧空位对"}],"language":"zh","publisherId":"rgjtxb98200503026","title":"PbWO4晶体中铅氧空位对对晶体光学性质的影响","volume":"34","year":"2005"},{"abstractinfo":"为探索电子束物理气相沉积(EB-PVD)制备YSZ涂层的显微组织结构特征,采用大功率EB-PVD设备制备了20 μm厚的YSZ涂层.分别利用X射线荧光光谱(XRF)和X射线衍射(XRD)技术分析了涂层的化学成分和物相组成,并进一步采用X射线面探扫描技术对涂层的织构进行了表征.分析结果表明,涂层材料具有典型的立方萤石型结构,且表现出择优取向特征,空气气氛中1273 K退火前后XRD峰位的偏移以及退火后O元素沿断面的浓度分布均表明制备过程中在涂层的晶格内形成了额外的氧空位.","authors":[{"authorName":"孟彬","id":"5e0efaac-40ad-4003-8178-acf763b81315","originalAuthorName":"孟彬"},{"authorName":"孙跃","id":"e3ede3df-9e58-41ec-9f7f-f6eeee1816ac","originalAuthorName":"孙跃"},{"authorName":"赫晓东","id":"90e3b323-e898-4af0-8805-0bcbf9ad8e6a","originalAuthorName":"赫晓东"},{"authorName":"李明伟","id":"d8aa275b-c60e-4e79-93ec-310868bc8007","originalAuthorName":"李明伟"}],"doi":"10.3969/j.issn.1005-0299.2007.06.008","fpage":"770","id":"ca32a87f-06c3-40fd-b40c-9b49b212700a","issue":"6","journal":{"abbrevTitle":"CLKXYGY","coverImgSrc":"journal/img/cover/CLKXYGY.jpg","id":"14","issnPpub":"1005-0299","publisherId":"CLKXYGY","title":"材料科学与工艺"},"keywords":[{"id":"a62ae166-0868-4134-a497-24746990bdca","keyword":"电子束物理气相沉积","originalKeyword":"电子束物理气相沉积"},{"id":"3cf73d36-7f97-4356-a385-c7362b9be65c","keyword":"YSZ涂层","originalKeyword":"YSZ涂层"},{"id":"e420a7a9-3420-4604-adba-821eb8037cdf","keyword":"氧空位","originalKeyword":"氧空位"},{"id":"9fdc9fca-c9aa-4284-a458-6b20da28c695","keyword":"织构表征","originalKeyword":"织构表征"},{"id":"c1440dcd-8305-4e35-9f1a-d09ed9be824b","keyword":"面探X射线衍射","originalKeyword":"面探X射线衍射"}],"language":"zh","publisherId":"clkxygy200706008","title":"EB-PVD制备YSZ涂层的氧空位和晶体学织构表征","volume":"15","year":"2007"}],"totalpage":4546,"totalrecord":45453}