Deheng ZHANG
,
Qingpu WANG
,
Yunyan LIU
材料科学技术（英文）
This paper presents the UV photoconductivity properties of GaN films doped with different Mg concentrations deposited by MOCVD. It was observed that for the undoped and weakly doped GaN films the UV photocurrent response was relatively large and the relax time was relatively short. With an increase in doped Mg content, the samples became p-type, the photocurrent response became weak and the relax time became longer.
关键词:
GaN
,
null
,
null
,
null
张宏哲
,
王林军
,
夏长泰
,
赛青林
,
肖海林
人工晶体学报
本论文综述了宽禁带半导体β-Ga2O3材料的研究进展,包括晶体结构,生长方法,掺杂离子,光学性质和电学性质.β-Ga2O3可以作为GaN基LEDs的潜在衬底,同时它也在MOSFET和紫外光探测器方面有着重要的应用前景.
关键词:
β-Ga2O3
,
晶体生长
,
LED
,
MOSFET
,
紫外光探测器
