FENG Shuifu ZHO U Jicheng Shanghai Institute of Metallurgy
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Academia Sinica
,
Shanghai
,
China ZHOU Jicheng
,
Shanghai Institute of Metallurgy
,
Academia Sinica
,
Shanghai 200050
,
China
金属学报(英文版)
A modified liquid phase epitaxy apparatus for semiconductor materials was used to measure the solubility of GaAs in Bi.Two phase diagrams rich in Bi under H_2 and N_2 atmospheres were obtained according to the results of measurement.A new phenomenon,in which the parameter Q value(quantity of GaAs dissolved in Bi in fixed time/saturation quantitu,of GaAs in Bi)was different from each other at various temperatures and there existed a maxi- mum Q value at definite temperature,was observed.This phenomenon may be regarded as a common feature of a simple binary metallic system which has the phase diagram similar to that of Bi-GaAs.The difference observed from the dependence of Q values on temperature in both H_2 and N_2 atmospheres was discussed.
关键词:
solubility
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null
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null
冯水富
,
周继程
金属学报
用改进的半导体材料生长中的液相外延设备测定了GaAs在Bi中溶解度。根据测定结果,获得了富Bi侧的Bi-GaAs二元平衡图。同时发现,在所研究的温度范围内相同的溶解时间内的溶解量与饱和溶解量之比与温度的关系也各不相同。这一现象似可认为是某些金属间溶解过程中的普遍特性。
关键词:
液相外延
,
solubility
,
phase diagram
