陈万春
,
简来成
人工晶体学报
doi:10.3969/j.issn.1000-985X.2002.03.010
相场方法已被发掘出用于直接求解含时的自由边界问题-著名的斯特藩方程.该方法作为晶体生长过程中模拟复杂图形成因的计算工具,已呈现出强有力的生命力.目前的研究在于努力发展精巧的计算技术,以便对于晶体生长和金属凝固过程进行理论模拟,而这些技术将有可能广泛地应用于工业流程.相场方法之所以具有吸引力,基于如下事实:在计算机模拟过程中,既可避免对于边界的实时追踪,又不需要反复判别是否满足显式边界条件.在过去的10年中,它已逐步被用于研究晶体生长的基础课题.诸如:热质输运、晶体生长动力学、二维和三维枝晶生长、图形选择、生长形态和显微结构等.本文对相场方法进行评述,同时给出其最新应用结果.
关键词:
相场法
,
晶体生长
,
图像形成
,
斯特藩模型
,
枝晶生长
,
计算机模拟
X.Q.Wei
,
L.Zhou
金属学报(英文版)
A model coupling particle aggregation and randomwalk surface diffusion has. been developed for 2D simulation of depositional growth, in which impinging particles follow either a straight-line trajectory, of cosine distribution, representing typically sputter deposition, or a scattered trajectory， representing typically electrochemical deposition.Simulations of the growth under various impinging conditions and effective surface diffusivity have been carried out. Pattern and defect development in deposition on flat,trenched and ridged substrates have been investigated. We found that on fiat and ridged substrates, both types of trajectories yield similar features, including formation of cone-like defects on surface ridges. While on trenched substrate, the straight-line impingement yielded more uniform step coverage than the scattered impingement.
关键词:
deposition
,
null
,
null
