{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"石墨烯作为一种碳原子所组成的二维蜂窝状结构晶体，具有诸多优异的特性，从而倍受全世界科学工作者的关注。在碳化硅衬底上外延生长石墨烯是实现石墨烯在微电子领域中应用的最有效途径之一。利用感应加热的高温 CVD 设备，先在4H-SiC 衬底上外延生长一层2~10μm 厚的碳化硅，然后直接再在外延碳化硅上原位外延生长石墨烯。实现外延碳化硅-石墨烯的连续生长，从而减少氢气刻蚀带来的晶格缺陷和表面硅富集严重削减现象，并使低成本制备碳化硅上的石墨烯成为可能。通过拉曼光谱、扫描电子显微镜及 X 射线光电子能谱等表征，验证了该方法生长的石墨烯具有较好的晶体质量。","authors":[{"authorName":"张学敏","id":"3fd4a665-25ed-4253-96eb-8a6bfd24d2bd","originalAuthorName":"张学敏"},{"authorName":"张立国","id":"a6c7b062-0a2d-488e-a62e-678c9b5efdb7","originalAuthorName":"张立国"},{"authorName":"钮应喜","id":"0c5bd8b9-e6b2-443b-a54a-6a7106bd4673","originalAuthorName":"钮应喜"},{"authorName":"鞠涛","id":"0500fdf8-c2bb-44fb-9956-0a784fedb0ef","originalAuthorName":"鞠涛"},{"authorName":"李哲","id":"36e5bd65-55ae-4bf2-93fb-e534358606d1","originalAuthorName":"李哲"},{"authorName":"范亚明","id":"0512e84b-2009-4772-abde-10548b65b748","originalAuthorName":"范亚明"},{"authorName":"杨霏","id":"0097df89-d430-4354-ae1e-fac01dafa75a","originalAuthorName":"杨霏"},{"authorName":"张泽洪","id":"4c2941c5-4188-4db7-9e33-8f38cc767810","originalAuthorName":"张泽洪"},{"authorName":"<span style=\"color:red\">张宝顺</span>","id":"bf9ed1a2-eb7b-4f1c-b1cd-eb829b887576","originalAuthorName":"张宝顺"}],"doi":"10.3969/j.issn.1001-9731.2015.04.028","fpage":"4140","id":"3a303fd6-4342-41dd-911b-70caeddb9af9","issue":"4","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"afe7bfd1-1b62-4fc6-a043-fe88d54fcd3b","keyword":"石墨烯","originalKeyword":"石墨烯"},{"id":"fc6ad6a1-d665-4dcf-a46e-8826bf07bb45","keyword":"碳化硅","originalKeyword":"碳化硅"},{"id":"d0ce1f1f-ec8b-4968-8b2b-caf2f64f5b45","keyword":"外延生长","originalKeyword":"外延生长"},{"id":"1734fc47-2329-4f40-b9b1-6bd7dce4cd56","keyword":"晶体质量","originalKeyword":"晶体质量"}],"language":"zh","publisherId":"gncl201504028","title":"外延生长碳化硅-石墨烯薄膜的制备及表征研究","volume":"","year":"2015"},{"abstractinfo":"利用分子束外延生长方法生长出InGaAs/GaAs应变量子阱材料.利用该材料制作出的应变量子阱列阵半导体激光器准连续(500μs,100Hz)输出功率达到27W(室温),峰值波长为939～941nm,并分析了影响列阵半导体激光器输出功率的因素.","authors":[{"authorName":"曲轶","id":"b3ceb048-4e96-4667-be0d-4a99a93460d9","originalAuthorName":"曲轶"},{"authorName":"薄报学","id":"34835772-8af6-469f-ab0d-a016885ec6f6","originalAuthorName":"薄报学"},{"authorName":"高欣","id":"3a038c05-4085-4fc3-b0a1-bde040ab7b6b","originalAuthorName":"高欣"},{"authorName":"<span style=\"color:red\">张宝顺</span>","id":"d96209a4-1ce8-4893-aa5b-b45106971e88","originalAuthorName":"张宝顺"},{"authorName":"张兴德","id":"839957ef-fb68-41a4-b4b1-773115a3ceac","originalAuthorName":"张兴德"},{"authorName":"石家纬","id":"06a98118-e76b-46a8-a54d-1a3579594faa","originalAuthorName":"石家纬"}],"doi":"10.3969/j.issn.1007-4252.2000.03.036","fpage":"276","id":"d2e13d18-5b5c-4be8-b716-bd4b8b5760fa","issue":"3","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"63d92d6e-97c0-4f78-8027-a8ac50499f34","keyword":"分子束外延","originalKeyword":"分子束外延"},{"id":"f98e71ed-d86a-4ce5-9dd6-84eb6a0fffc9","keyword":"阵","originalKeyword":"阵"},{"id":"bdcdabac-e19a-4487-81a8-612d2e90e316","keyword":"半导体激光器","originalKeyword":"半导体激光器"}],"language":"zh","publisherId":"gnclyqjxb200003036","title":"940nm高功率列阵半导体激光器","volume":"6","year":"2000"},{"abstractinfo":"利用分子束外延(MBE)技术,在GaAs衬底上生长了高质量的GaAs/GaAsSb超晶格,并通过高分辨X射线衍射(HRXRD)技术对Sb/As交换反应进行研究.实验表明,随着衬底温度的升高,Sb解吸附速度增加,在Sb束流作用下形成的GaAs/GaAsSb超晶格中的Sb含量下降.而Sb束流大小和暴露在Sb束流中的时间对GaAs/GaAsSb超晶格中的Sb含量影响很小.这说明Sb与GaAs中的As原子的交换反应仅发生在GaAs表层,Sb原子在GaAs中的扩散距离很短.","authors":[{"authorName":"邱永鑫","id":"a22c6a1c-e683-4f89-aa69-76a0ee64a267","originalAuthorName":"邱永鑫"},{"authorName":"李美成","id":"36f183de-bda2-4cd3-bf07-275bbe643a19","originalAuthorName":"李美成"},{"authorName":"熊敏","id":"281cae4f-4cbd-452a-9f0c-bafd22476e10","originalAuthorName":"熊敏"},{"authorName":"<span style=\"color:red\">张宝顺</span>","id":"b7a963b1-a7de-4ea5-82f1-ee6f062f7f1d","originalAuthorName":"张宝顺"},{"authorName":"刘国军","id":"d6262ca7-882f-48e7-a22f-a00a4ca56480","originalAuthorName":"刘国军"},{"authorName":"赵连城","id":"68267cb6-969e-47a6-82f8-a032bd5a7a0d","originalAuthorName":"赵连城"}],"doi":"","fpage":"1983","id":"f47d71bb-c215-4648-85ad-fa9ae92457a8","issue":"11","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"37a8e147-bf3e-4340-8350-86ac645a45ee","keyword":"分子束外延","originalKeyword":"分子束外延"},{"id":"1f4dd5f1-868e-4d1b-9856-092ef6178fb6","keyword":"异质结","originalKeyword":"异质结"},{"id":"77983301-32d8-4183-8e3d-4192948e603c","keyword":"超品格","originalKeyword":"超品格"},{"id":"7d595b99-6551-487d-bd07-2082930064cd","keyword":"Sb/As交换反应","originalKeyword":"Sb/As交换反应"}],"language":"zh","publisherId":"xyjsclygc200911022","title":"半导体异质结界面处Sb/As交换反应研究","volume":"38","year":"2009"},{"abstractinfo":"设计并利用LP-MOCVD生长了InGaAsP/GaAs分别限制单量子阱结构,采用无铝的InGaP做光学包层.腔面未镀膜情况下,测试10支条宽100μm,腔长1mm的激光器样品,连续输出功率超过1W,阈值电流密度为330～490A/cm2,外微分量子效率为55%～78%,中心发射波长为(808±3)nm.","authors":[{"authorName":"李忠辉","id":"541794f1-3714-40f3-91c4-f4b3bc19ee0f","originalAuthorName":"李忠辉"},{"authorName":"王向武","id":"5d6a9ecb-7585-4687-848a-114aa51e87dd","originalAuthorName":"王向武"},{"authorName":"<span style=\"color:red\">张宝顺</span>","id":"c448920e-5053-433f-a3dc-ebd0f73e7fae","originalAuthorName":"张宝顺"},{"authorName":"杨进华","id":"52de51f1-8adb-4eda-a524-be5f39a529a5","originalAuthorName":"杨进华"},{"authorName":"张兴德","id":"5c25382d-33bb-4c24-83df-a08f5eb9670c","originalAuthorName":"张兴德"}],"doi":"10.3969/j.issn.1007-4252.2000.03.024","fpage":"232","id":"f6d24511-2184-4197-bcaa-b8b0584b65f8","issue":"3","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"fa9118b8-cbbe-41cb-a448-a461df22b142","keyword":"分别限制结构","originalKeyword":"分别限制结构"},{"id":"da71aa96-fe9f-46c5-8140-eef815b7292a","keyword":"单量子阱","originalKeyword":"单量子阱"},{"id":"0352d76f-9c06-4e58-919a-508788a94014","keyword":"激光器","originalKeyword":"激光器"}],"language":"zh","publisherId":"gnclyqjxb200003024","title":"LP-MOCVD生长大功率InGaAsP/GaAs量子阱激光器","volume":"6","year":"2000"},{"abstractinfo":"自触发脉冲激光测距是一种新型的脉冲激光测距方法,该方法解决了传统脉冲激光测距测量精度与测量速度之间的矛盾.其飞行时间测量系统的设计很大程度上决定了自触发脉冲激光测距的测量精度和测量速度.设计并实现了基于CPLD的自触发脉冲激光测距的飞行时间测量系统.CPLD的使用提高了激光测距的精度,并且系统结构简单,体积小,可靠性高,非常适合高性能手持式脉冲激光测距仪.对自触发脉冲激光测距进行了实验研究,在20 m的测量范围内,获得了±0.98 mm的测距精度.","authors":[{"authorName":"杨成伟","id":"f72c0e8d-3006-43d4-8bdb-6d936e6e706e","originalAuthorName":"杨成伟"},{"authorName":"霍玉晶","id":"06e3799f-dea0-45af-87b2-b27004b59213","originalAuthorName":"霍玉晶"},{"authorName":"陈千颂","id":"6db76175-2a94-4332-a9c9-5a99fcfa0e3f","originalAuthorName":"陈千颂"},{"authorName":"赵大龙","id":"52d52fa7-8ad7-4fa4-8477-fca3845c81c8","originalAuthorName":"赵大龙"},{"authorName":"秦来贵","id":"abb54bd3-81bb-4919-a5c4-bfeacb4d6676","originalAuthorName":"秦来贵"},{"authorName":"<span style=\"color:red\">张宝顺</span>","id":"325af6f8-6fd0-4fe0-b90c-dd8a428201f5","originalAuthorName":"张宝顺"}],"doi":"10.3969/j.issn.1007-5461.2005.06.016","fpage":"914","id":"468db933-e61b-4b4a-919f-631eaedf75d8","issue":"6","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"515732c7-e6aa-48e8-9731-96878066084b","keyword":"激光技术","originalKeyword":"激光技术"},{"id":"72ff08a9-dde9-4afa-b5a6-0b823cab7ca5","keyword":"脉冲激光测距","originalKeyword":"脉冲激光测距"},{"id":"ea0ec5b5-4117-40d6-9ce3-8f6e1619cadf","keyword":"自触发","originalKeyword":"自触发"},{"id":"9f438d75-51d0-4267-86c6-c8da10c53f8c","keyword":"飞行时间测量","originalKeyword":"飞行时间测量"},{"id":"defb0392-470d-4d28-8cb0-56c020832ec6","keyword":"CPLD","originalKeyword":"CPLD"},{"id":"9aca6f3d-7b71-4845-9cf7-41075eb3ee5d","keyword":"精度","originalKeyword":"精度"}],"language":"zh","publisherId":"lzdzxb200506016","title":"CPLD在自触发脉中激光测距飞行时间测量中的应用","volume":"22","year":"2005"},{"abstractinfo":"采用化学气相沉积法制备了螺旋碳纤维,通过XRD、EDX和SEM对样品进行了表征和分析,采用研磨方法考察了螺旋结构的破坏情况,并对比了研磨前后样品的低温磁性.结果表明,在有效去除催化剂的情况下,螺旋形貌被破坏以后,碳纤维的抗磁性信号增强.基于单电子受缚于螺旋线的物理模型对实验结果进行分析和讨论,认为螺旋形貌具有<span style=\"color:red\">顺</span>磁响应,并阐释了其产生机理.","authors":[{"authorName":"朱俊廷","id":"fdb1c6a6-5f9b-4eb9-b713-1207828f1a18","originalAuthorName":"朱俊廷"},{"authorName":"简贤","id":"203ace05-c555-4c78-ae5a-96cc0ac0a445","originalAuthorName":"简贤"},{"authorName":"王定川","id":"c9234349-1c23-40e4-9d4d-4e2fcd2490c1","originalAuthorName":"王定川"},{"authorName":"周祚万","id":"f9457a50-3e50-4447-a0d3-429bc89c183d","originalAuthorName":"周祚万"}],"doi":"","fpage":"17","id":"2ceef50a-b6d5-4c99-9fa7-ed8e72fc6665","issue":"16","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"576532c0-0360-464d-bb25-a3b13d1499f5","keyword":"螺旋碳纤维","originalKeyword":"螺旋碳纤维"},{"id":"d4977472-8617-4705-9b4e-46f80a0ffaef","keyword":"<span style=\"color:red\">顺</span>磁响应","originalKeyword":"顺磁响应"},{"id":"6298860c-3510-4a75-bdb1-6c27a745d17f","keyword":"手征性破缺","originalKeyword":"手征性破缺"}],"language":"zh","publisherId":"cldb201216005","title":"螺旋碳纤维的<span style=\"color:red\">顺</span>磁响应","volume":"26","year":"2012"},{"abstractinfo":"研究了添加催化剂、抗氧化剂溶剂法生产<span style=\"color:red\">顺</span>丁烯二酸酯树脂的配方及工艺.该法的酯化温度低,生产工时短,节能,降耗,产品颜色浅,性能优良.","authors":[{"authorName":"葛利丫","id":"217fc940-868d-4eab-9854-2ea10643fcac","originalAuthorName":"葛利丫"}],"doi":"10.3969/j.issn.0253-4312.2001.08.015","fpage":"40","id":"15dd2210-bfac-48ff-97c9-7692a99070df","issue":"8","journal":{"abbrevTitle":"TLGY","coverImgSrc":"journal/img/cover/TLGY.jpg","id":"61","issnPpub":"0253-4312","publisherId":"TLGY","title":"涂料工业   "},"keywords":[{"id":"7947827a-df09-49d2-aa30-9d8b50b73cd7","keyword":"溶剂法","originalKeyword":"溶剂法"},{"id":"ec917717-2ff4-4c7a-b109-e9c905323d4b","keyword":"催化剂","originalKeyword":"催化剂"},{"id":"078407ec-feb8-4341-9103-2468fd6a02b8","keyword":"抗氧剂","originalKeyword":"抗氧剂"},{"id":"3352c53c-4c74-43a7-88d7-02baa0328b75","keyword":"<span style=\"color:red\">顺</span>丁烯二酸酯树脂","originalKeyword":"顺丁烯二酸酯树脂"}],"language":"zh","publisherId":"tlgy200108015","title":"剂法生产<span style=\"color:red\">顺</span>了烯二酸酯树脂","volume":"31","year":"2001"},{"abstractinfo":"利用热分析技术研究了<span style=\"color:red\">顺</span>丁烯二酸酐在N2气气氛中不同升温速率条件下的热失重过程,得出失重过程的动力学方程和动力学参数.<span style=\"color:red\">顺</span>丁烯二酸酐在温度为110-160℃,质量损失率>98%.通过热重-红外联用技术得出热失重过程的气体产物为<span style=\"color:red\">顺</span>丁烯二酸酐气体,该失重过程的实质是<span style=\"color:red\">顺</span>丁烯二酸酐的升华过程.在质量损失率a为0.2～0.9范围内,用迭代的等转化率法求得失重过程的活化能为(75.147±0.48)KJ/mol.与Coats-Redfern方程计算出的Ea((75.064 5±1.239)kJ/mol)吻合.由此推出,<span style=\"color:red\">顺</span>丁烯二酸酐的失重过程可以用单一的机理函数来描述,排除了存在多个分解反应步骤相互重叠的可能性;并用主曲线法确定了失重过程的最可几机理函数的积分式G(a)=1-(1-a)m(m=0.813 9±0.02);由Ea和G(a)求得速率方程中的指前因子In(A/s-1)为23.57±0.018.","authors":[{"authorName":"解凤霞","id":"1e35ef58-4965-40ad-ae9d-75ceb255b6f0","originalAuthorName":"解凤霞"},{"authorName":"张逢星","id":"f10825da-55ff-4058-b801-5690b0a46569","originalAuthorName":"张逢星"},{"authorName":"薛凝","id":"5abfc8c5-41a0-4aea-b35b-76dc0b229955","originalAuthorName":"薛凝"}],"doi":"10.3969/j.issn.1000-0518.2008.03.018","fpage":"340","id":"f7212f37-381b-46b8-af4f-6dc95e5baec1","issue":"3","journal":{"abbrevTitle":"YYHX","coverImgSrc":"journal/img/cover/YYHX.jpg","id":"73","issnPpub":"1000-0518","publisherId":"YYHX","title":"应用化学"},"keywords":[{"id":"bc078e5a-a7a4-4d4a-921d-e77ed37689f2","keyword":"<span style=\"color:red\">顺</span>丁烯二酸酐","originalKeyword":"顺丁烯二酸酐"},{"id":"acd1a1d2-99f3-4aa8-b02b-c0ba3d1817d0","keyword":"等转化率法","originalKeyword":"等转化率法"},{"id":"2e2c6c21-18f7-46fd-8fc2-8ea0b19d2954","keyword":"主曲线法","originalKeyword":"主曲线法"},{"id":"33857c49-c64b-4fa4-b671-1d6ef777a560","keyword":"热分析动力学","originalKeyword":"热分析动力学"}],"language":"zh","publisherId":"yyhx200803018","title":"<span style=\"color:red\">顺</span>丁烯二酸酐的热失重动力学","volume":"25","year":"2008"},{"abstractinfo":"研究了反应温度、反应时间、投料比和介质中水含量等因素对反应产物羧化度和取代度的影响,获得了<span style=\"color:red\">顺</span>丁烯二酸酐与淀粉进行酯化反应的较适宜条件为6 g淀粉与6 g<span style=\"color:red\">顺</span>丁烯二酸酐以6 mL吡啶为催化剂,30 ℃下在7 mL水和30 mL N,N-二甲基甲酰胺的混合介质中反应9 h,制得羧化度及取代度分别为34.7%和0.868的<span style=\"color:red\">顺</span>丁烯二酸淀粉单羧基酯. 12 g淀粉与10 g<span style=\"color:red\">顺</span>丁烯二酸酐在1.5 g过硫酸钾的引发下,95 ℃下以30 mL水为介质反应4 h,也得到羧化淀粉衍生物,其羧化度及取代度分别为42.7%和1.22. FTIR分析确定了上述2种反应产物的结构,X射线衍射分析结果表明,2种淀粉衍生物的结晶度均低于纯淀粉.","authors":[{"authorName":"萧聪明","id":"75786f6a-a7f0-4111-8cd5-094cabda3f7e","originalAuthorName":"萧聪明"},{"authorName":"叶俊","id":"ca016625-d88d-4485-9b71-84bb6473bedf","originalAuthorName":"叶俊"}],"doi":"10.3969/j.issn.1000-0518.2005.06.014","fpage":"643","id":"c3ebb895-e792-4d88-803a-43eb8c1ccc7c","issue":"6","journal":{"abbrevTitle":"YYHX","coverImgSrc":"journal/img/cover/YYHX.jpg","id":"73","issnPpub":"1000-0518","publisherId":"YYHX","title":"应用化学"},"keywords":[{"id":"d13b4d44-6390-440e-86e3-6bc2a1045dd1","keyword":"淀粉","originalKeyword":"淀粉"},{"id":"5d1825d7-0f5b-4af7-825c-74299bb6165c","keyword":"<span style=\"color:red\">顺</span>丁烯二酸酐","originalKeyword":"顺丁烯二酸酐"},{"id":"ed3a2f8c-7b75-4ab7-8ee5-39a576a1a893","keyword":"羧化","originalKeyword":"羧化"}],"language":"zh","publisherId":"yyhx200506014","title":"<span style=\"color:red\">顺</span>丁烯二酸酐羧化淀粉的制备","volume":"22","year":"2005"},{"abstractinfo":"探讨了一系列价格低廉的<span style=\"color:red\">顺</span>酐加氢制γ-丁内酯的Cu/ZnO/Al2O3催化剂,并运用XR D、TPR等技术对催化剂活性与物理性能的关系进行了探讨,结果表明,不同的n(Cu)/ n(Zn)、不同的焙烧温度可形成不同的比表面积、孔容、孔半径和不同的晶格缺陷,从而具有不同的催化活性和选择性.","authors":[{"authorName":"李君","id":"1e78b4d7-c596-4d66-b230-efdc81d90ac3","originalAuthorName":"李君"},{"authorName":"蒋毅","id":"67de8260-7e2d-4e77-9052-540b27f72f2e","originalAuthorName":"蒋毅"},{"authorName":"程极源","id":"a05260f4-fd5a-44fe-a470-dea41c48a409","originalAuthorName":"程极源"},{"authorName":"王华明","id":"07b4b41a-26db-4c21-a51b-066492e07f8d","originalAuthorName":"王华明"}],"doi":"10.3969/j.issn.1000-0518.2000.04.008","fpage":"379","id":"cce19df8-860f-443a-8113-43abca1c973c","issue":"4","journal":{"abbrevTitle":"YYHX","coverImgSrc":"journal/img/cover/YYHX.jpg","id":"73","issnPpub":"1000-0518","publisherId":"YYHX","title":"应用化学"},"keywords":[{"id":"b0b8d13a-1bb0-4163-8d26-b3e2f7e88053","keyword":"<span style=\"color:red\">顺</span>丁烯二酸酐","originalKeyword":"顺丁烯二酸酐"},{"id":"8ef38dc0-b36a-4384-9e67-d7dc4e8e3670","keyword":"γ-丁内酯","originalKeyword":"γ-丁内酯"},{"id":"30f49df1-1ddb-418c-928e-652c81be904c","keyword":"催化加氢","originalKeyword":"催化加氢"}],"language":"zh","publisherId":"yyhx200004008","title":"<span style=\"color:red\">顺</span>酐常压催化加氢制γ-丁内酯","volume":"17","year":"2000"}],"totalpage":79,"totalrecord":787}