Rongfa CHEN
,
Dunwen ZUO
,
Feng XU
,
Duoseng LI
,
Min WANG
材料科学技术（英）
The contacting interface between the substrate and water-cooled base is vital to the substrate temperature during diamond films deposition by a DC (direct current) plasma jet. The effects of the solid contacting area, conductive materials and fixing between the substrate and the base were investigated without affecting the other parameters. Experimental results indicated that the preferable solid contacting area was more than 60% of total contacting areal; the particular Sn-Pb alloy was more suitable for conducting heat and the concentric fixing ring was a better setting for controlling the substrate temperature. The result was explained in terms of the variable thermal contact resistance at the interface between substrate and base. The diamond films were analyzed by scanning electron microscopy (SEM) for morphology, X-ray diffraction (XRD) for the intensity of characteristic spectroscopy and Raman spectroscopy for structure.
关键词:
diamond films
,
基体温度
,
连接界面
,
直流等离子体
尹盛
,
王敬义
,
李战春
,
张繁
,
沈亮
,
赵伯芳
稀有金属材料与工程
介绍了一种用直流氩等离子体对硅粉刻蚀提纯的方法.实验结果表明硅粉纯度可由99.6%提高到99.95%.处理后的硅粉还可进行熔化-固化-粉碎再处理,因此这是一种技术上可行的太阳级硅制备新方法.文中还应用反应室鞘层厚度、硅粉沉降平均速度、考虑高能中性粒子刻蚀作用的刻蚀速率方程等进行理论分析,结果显示,在一定的工艺参数下,刻蚀提纯是有效的,并与实验结果相近.这也为粉体表面刻蚀研究提供了一种新的手段.
关键词:
粉粒表面刻蚀
,
刻蚀提纯
,
太阳级硅
,
直流等离子体
李多生
,
周贤良
,
左敦稳
,
邹爱华
功能材料
采用直流等离子体喷射化学气相沉积(DCPJCVD)制备曲面金刚石膜,等离子体稳定性对金刚石膜生长十分重要.研究表明,曲面金刚石膜长时间生长,阳极积聚石墨碳点,等离子体流动受阻失稳,金刚石膜含较多杂质.通过对阳极除碳处理,可维持稳定的等离子体、稳定的电子温度Te、均匀的活性原子及原子基团密度.制备的金刚石膜经SEM、Raman等表征,发现曲面金刚石膜致密、晶粒均匀,仅发现金刚石特征峰,制备的曲面金刚石膜质量较高.
关键词:
曲面金刚石膜
,
CVD
,
直流等离子体
,
稳定性
李多生
,
左敦稳
,
陈荣发
,
相炳坤
,
赵礼刚
,
王珉
稀有金属材料与工程
采用直流等离子体CVD法制备了金刚石膜,利用X射线衍射、光学显微镜、扫描电镜、激光拉曼光谱等技术研究了金刚石膜的微观组织,晶粒择优取向生长过程.结果表明:开始形核时,晶粒随机无择优生长;对基体表面氢刻蚀预处理,有利于晶胚形核长大.甲烷浓度对金刚石膜晶粒择优取向生长有重要影响:甲烷浓度较低时,金刚石膜(100)面择优生长,形成以(111)为主的八面体晶体,并且可以制取中心和边缘均匀、高质量光学级自支撑金刚石膜,但生长速率慢,效率低.同时也发现金刚石膜存在空位、孔洞等缺陷.
关键词:
化学气相沉积
,
直流等离子体
,
金刚石膜
,
微观结构
